All-Electrostatic Valley Filtering by Barrier Rotation in Tilted Dirac/Weyl Semimetals

All-Electrostatic Valley Filtering by Barrier Rotation in Tilted Dirac/Weyl Semimetals | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Article All-Electrostatic Valley Filtering by Barrier Rotation in Tilted Dirac/Weyl Semimetals Can Yesilyurt This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-9007787/v1 This work is licensed under a CC BY 4.0 License Status: Posted Version 1 posted You are reading this latest preprint version Abstract Charge carriers in Dirac/Weyl semimetals with tilted anisotropic energy dispersion exhibit valley-dependent refraction and reflection at electrostatic barrier interfaces. Here, we show that an angled barrier interface provides a purely electrostatic route to valley filtering, producing finite valley-polarized conductance. We develop a generalized transfer-matrix formalism for the tilted, anisotropic Dirac Hamiltonian, extended to treat electrostatic barriers at arbitrary angles, and calculate the transmission in the rotated-barrier frame. We also present simulated valley-resolved trajectories in a finite device geometry, which clearly show that one valley is selectively transmitted, whereas the other is predominantly reflected by the angled barrier, without secondary effects such as real or pseudo-magnetic fields. Physical sciences/Physics/Condensed-matter physics/Electronic properties and materials Physical sciences/Materials science/Condensed-matter physics/Electronic properties and materials Full Text Additional Declarations There is NO Competing Interest. Cite Share Download PDF Status: Posted Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-9007787","acceptedTermsAndConditions":true,"allowDirectSubmit":true,"archivedVersions":[],"articleType":"Article","associatedPublications":[],"authors":[{"id":599737206,"identity":"e451d8a9-6158-42bd-ab1a-50125f244ce0","order_by":0,"name":"Can Yesilyurt","email":"data:image/png;base64,iVBORw0KGgoAAAANSUhEUgAAAZAAAAAyAQMAAABI0h/eAAAABlBMVEX///8AAABVwtN+AAAACXBIWXMAAA7EAAAOxAGVKw4bAAABA0lEQVRIiWNgGAWjYDADNnYwZZMAphIKiNHCDFaalsDABqINiLEGouUwRAsDHi387WcPMDC22djzMfOYSVf+OJ/HL9+d+OGBAYM8v9gBrFokzuQlALWkJbYBtUieSbhdLNnGu1kC6DDDmbMTsGoxYMgx//237XACG0hLQ8LtxA3HeDeAtCQY3Mahhf+NAdCW//ZQLedAWjb/wKtFIgek5QBjG0TLAZCWbXhtkbgBtIXhXDLQL2zFlg1pyYkz23K3WSQYSOD0C38/0BaGMjt7+fbmjTcbbOwS+5nPbr75o8JGnl8auxYwYARHBQdKXEjgVg4Gf0AE+wMCqkbBKBgFo2CkAgChBFMWKPOaaAAAAABJRU5ErkJggg==","orcid":"https://orcid.org/0000-0003-4949-3523","institution":"Nanoelectronics Research Center","correspondingAuthor":true,"prefix":"","firstName":"Can","middleName":"","lastName":"Yesilyurt","suffix":""}],"badges":[],"createdAt":"2026-03-02 08:50:57","currentVersionCode":1,"declarations":"","doi":"10.21203/rs.3.rs-9007787/v1","doiUrl":"https://doi.org/10.21203/rs.3.rs-9007787/v1","draftVersion":[],"editorialEvents":[],"editorialNote":"","failedWorkflow":false,"files":[{"id":105727761,"identity":"c2cef1ba-da65-45c1-ab67-e6d2eac72114","added_by":"auto","created_at":"2026-03-30 11:03:09","extension":"pdf","order_by":1,"title":"","display":"","copyAsset":false,"role":"manuscript-pdf","size":654096,"visible":true,"origin":"","legend":"Article File","description":"","filename":"AllElectrostaticValleyFilteringbyBarrierRotationinTiltedDiracWeylSemimetals.pdf","url":"https://assets-eu.researchsquare.com/files/rs-9007787/v1_covered_6271e678-fbfd-4b91-a0ce-cdda054cfd47.pdf"}],"financialInterests":"There is \u003cb\u003eNO\u003c/b\u003e Competing Interest.","formattedTitle":"All-Electrostatic Valley Filtering by Barrier Rotation in Tilted Dirac/Weyl Semimetals","fulltext":[],"fulltextSource":"","fullText":"","funders":[],"hasAdminPriorityOnWorkflow":false,"hasManuscriptDocX":false,"hasOptedInToPreprint":true,"hasPassedJournalQc":"","hasAnyPriority":true,"hideJournal":true,"highlight":"","institution":"","isAcceptedByJournal":false,"isAuthorSuppliedPdf":true,"isDeskRejected":"","isHiddenFromSearch":false,"isInQc":false,"isInWorkflow":false,"isPdf":true,"isPdfUpToDate":true,"isWithdrawnOrRetracted":false,"journal":{"display":true,"email":"[email protected]","identity":"researchsquare","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":true,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"/submission","title":"Research Square","twitterHandle":"researchsquare","acdcEnabled":true,"dfaEnabled":false,"editorialSystem":"","reportingPortfolio":"","inReviewEnabled":false,"inReviewRevisionsEnabled":true},"keywords":"","lastPublishedDoi":"10.21203/rs.3.rs-9007787/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-9007787/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"Charge carriers in Dirac/Weyl semimetals with tilted anisotropic energy dispersion exhibit valley-dependent refraction and reflection at electrostatic barrier interfaces. Here, we show that an angled barrier interface provides a purely electrostatic route to valley filtering, producing finite valley-polarized conductance. We develop a generalized transfer-matrix formalism for the tilted, anisotropic Dirac Hamiltonian, extended to treat electrostatic barriers at arbitrary angles, and calculate the transmission in the rotated-barrier frame. We also present simulated valley-resolved trajectories in a finite device geometry, which clearly show that one valley is selectively transmitted, whereas the other is predominantly reflected by the angled barrier, without secondary effects such as real or pseudo-magnetic fields.","manuscriptTitle":"All-Electrostatic Valley Filtering by Barrier Rotation in Tilted Dirac/Weyl Semimetals","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2026-03-04 00:48:51","doi":"10.21203/rs.3.rs-9007787/v1","editorialEvents":[{"type":"communityComments","content":0}],"status":"published","journal":{"display":true,"email":"[email protected]","identity":"researchsquare","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":true,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"/submission","title":"Research Square","twitterHandle":"researchsquare","acdcEnabled":true,"dfaEnabled":false,"editorialSystem":"","reportingPortfolio":"","inReviewEnabled":false,"inReviewRevisionsEnabled":true}}],"origin":"","ownerIdentity":"438facd6-3d85-4f94-91ce-890056ae135f","owner":[],"postedDate":"March 4th, 2026","published":true,"recentEditorialEvents":[],"rejectedJournal":[],"revision":"","amendment":"","status":"posted","subjectAreas":[{"id":63818780,"name":"Physical sciences/Physics/Condensed-matter physics/Electronic properties and materials"},{"id":63818781,"name":"Physical sciences/Materials science/Condensed-matter physics/Electronic properties and materials"}],"tags":[],"updatedAt":"2026-03-20T11:30:32+00:00","versionOfRecord":[],"versionCreatedAt":"2026-03-04 00:48:51","video":"","vorDoi":"","vorDoiUrl":"","workflowStages":[]},"version":"v1","identity":"rs-9007787","journalConfig":"researchsquare"},"__N_SSP":true},"page":"/article/[identity]/[[...version]]","query":{"redirect":"/article/rs-9007787","identity":"rs-9007787","version":["v1"]},"buildId":"XKTyCvWXoU3ODBz1xrDgd","isFallback":false,"isExperimentalCompile":false,"dynamicIds":[84888],"gssp":true,"scriptLoader":[]}