Research on a New Online Junction Temperature Estimation Method for Power Chips and Its Corresponding Technical Requirements

Research on a New Online Junction Temperature Estimation Method for Power Chips and Its Corresponding Technical Requirements | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Research on a New Online Junction Temperature Estimation Method for Power Chips and Its Corresponding Technical Requirements Lingfeng Shao, weiwei wei, guoqing xu This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-7072623/v1 This work is licensed under a CC BY 4.0 License Status: Posted Version 1 posted You are reading this latest preprint version Abstract In this paper, a temperature sensitive electrical parameter (TSEP) method for insulated gate bipolar transistor (IGBT) modules junction temperature estimation based on Voltage rise time is proposed. Firstly, combined with the principles of thermodynamic physics, the movement characteristics of internal carriers and holes were discussed. Then, the voltage and current characteristics of the device's turn-off process were studied. Secondly, compared with the traditional junction temperature detection methods, a junction temperature estimation method based on the voltage rise time was proposed, including the junction temperature model obtained by direct fitting, the junction temperature model based on the mechanism model, and the junction temperature model based on the mechanism and intelligent algorithm, and its feasibility was demonstrated.Finally, the advantages and disadvantages of the three models and the key technologies they rely on were analyzed. The research results show that the detection results of the junction temperature detection method based on the voltage rise time are relatively accurate because it involves both mechanism analysis and online extraction research simultaneously especially the model based on the mechanism model and intelligent algorithm. More importantly, for the online status detection of chips, not only accurate mechanism research is required, but also strong software and hardware design capabilities are needed to meet the requirements of online detection technology. Further reflection reveals that at this stage, compound researchers (theoretical research + technical research + artificial intelligence technology research) are becoming increasingly important, and higher education must play a significant role in this process. Insulated Gate Bipolar Transistor (IGBT) Junction Temperature Extraction Voltage rise time Technical talent cultivation Full Text Additional Declarations No competing interests reported. Cite Share Download PDF Status: Posted Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-7072623","acceptedTermsAndConditions":true,"allowDirectSubmit":true,"archivedVersions":[],"articleType":"Research Article","associatedPublications":[],"authors":[{"id":515154309,"identity":"86bb8910-b0a4-445d-a050-fc515a076c7f","order_by":0,"name":"Lingfeng Shao","email":"data:image/png;base64,iVBORw0KGgoAAAANSUhEUgAAAZAAAAAyAQMAAABI0h/eAAAABlBMVEX///8AAABVwtN+AAAACXBIWXMAAA7EAAAOxAGVKw4bAAAArUlEQVRIiWNgGAWjYLCCBzY2PPzsDaRoSUhLk5HsOUCalsM2BjcciFQtPyP98YeEhPM8DDcYGD98zCFCi8GNHDOJhITbPIyzG5glZ24jRotEDhtD4o/bPMwyB9iYeYnRAnXYOR42iQQitTDcSDAAOuwADw/RWgzOvAH5JZlHgudgM3F+kW8HOuxDgp29/fHmgx8+EuUwgQQYi7GBGPVAwH+ASIWjYBSMglEwcgEAaiQ1sPXR+9YAAAAASUVORK5CYII=","orcid":"","institution":"Shanghai Academy of Educational Sciences","correspondingAuthor":true,"prefix":"","firstName":"Lingfeng","middleName":"","lastName":"Shao","suffix":""},{"id":515154310,"identity":"89f413ec-8a86-42a5-8fd5-055773462234","order_by":1,"name":"weiwei wei","email":"","orcid":"","institution":"Anhui Polytechnic University","correspondingAuthor":false,"prefix":"","firstName":"weiwei","middleName":"","lastName":"wei","suffix":""},{"id":515154311,"identity":"44fa2ddf-6602-4623-b0b7-9ade40f04465","order_by":2,"name":"guoqing xu","email":"","orcid":"","institution":"Shanghai University","correspondingAuthor":false,"prefix":"","firstName":"guoqing","middleName":"","lastName":"xu","suffix":""}],"badges":[],"createdAt":"2025-07-08 08:38:43","currentVersionCode":1,"declarations":"","doi":"10.21203/rs.3.rs-7072623/v1","doiUrl":"https://doi.org/10.21203/rs.3.rs-7072623/v1","draftVersion":[],"editorialEvents":[],"editorialNote":"","failedWorkflow":false,"files":[{"id":93375524,"identity":"c86ad9f4-390e-465d-8dfc-fcb6a9fff8f1","added_by":"auto","created_at":"2025-10-13 08:09:51","extension":"pdf","order_by":1,"title":"","display":"","copyAsset":false,"role":"manuscript-pdf","size":781518,"visible":true,"origin":"","legend":"","description":"","filename":"ElectricalEngineering.pdf","url":"https://assets-eu.researchsquare.com/files/rs-7072623/v1_covered_5032bfea-fd50-46d3-a589-d65f30597081.pdf"}],"financialInterests":"No competing interests reported.","formattedTitle":"\u003cp\u003eResearch on a New Online Junction Temperature Estimation Method for Power Chips and Its Corresponding Technical Requirements\u003c/p\u003e","fulltext":[],"fulltextSource":"","fullText":"","funders":[],"hasAdminPriorityOnWorkflow":false,"hasManuscriptDocX":false,"hasOptedInToPreprint":true,"hasPassedJournalQc":"","hasAnyPriority":false,"hideJournal":true,"highlight":"","institution":"","isAcceptedByJournal":false,"isAuthorSuppliedPdf":true,"isDeskRejected":"","isHiddenFromSearch":false,"isInQc":false,"isInWorkflow":false,"isPdf":true,"isPdfUpToDate":true,"isWithdrawnOrRetracted":false,"journal":{"display":true,"email":"[email protected]","identity":"researchsquare","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":true,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"/submission","title":"Research Square","twitterHandle":"researchsquare","acdcEnabled":true,"dfaEnabled":false,"editorialSystem":"","reportingPortfolio":"","inReviewEnabled":false,"inReviewRevisionsEnabled":true},"keywords":"Insulated Gate Bipolar Transistor (IGBT), Junction Temperature Extraction, Voltage rise time, Technical talent cultivation","lastPublishedDoi":"10.21203/rs.3.rs-7072623/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-7072623/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"\u003cp\u003eIn this paper, a temperature sensitive electrical parameter (TSEP) method for insulated gate bipolar transistor (IGBT) modules junction temperature estimation based on Voltage rise time is proposed. 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