Photocurrent EDMR Measurement and Carrier Behavior of TIPS- Pentacene under FET Device Operation

Photocurrent EDMR Measurement and Carrier Behavior of TIPS- Pentacene under FET Device Operation | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Photocurrent EDMR Measurement and Carrier Behavior of TIPS- Pentacene under FET Device Operation Hina Kobayashi, Michio M. Matsushita, Ken Kato, Masazumi Fujiwara, and 1 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-4798591/v1 This work is licensed under a CC BY 4.0 License Status: Published Journal Publication published 15 Sep, 2024 Read the published version in Applied Magnetic Resonance → Version 1 posted 7 You are reading this latest preprint version Abstract The carrier dynamics of the organic semiconductor materials plays very important role in the device applications, because it is strongly related to the device performance. We report the electrically detected magnetic resonance (EDMR) study of a drop-casted film of 6,13–bis((triisopropylsilyl)ethynyl)pentacene (TIPS-Pn) under the field-effect transistor (FET) device operating condition. The EDMR signal could not observed without light-irradiation even under the FET device operating condition (carrier injected condition). This means the electrically injected carries (e-h pair) does not have spin polarization and notable spin-selective pathway after the charge injection. Under the light-irradiation, the EDMR signals was detected in the FET device both with and without the VGS (gate-source voltage) applied to the FET device and the intensity depended on the VGS. When 0 > VGS > VTH, which is near the threshold voltage of the carrier injection, the signal intensity increased with increasing |VGS| but in the region VGS |VTH|), the EDMR intensity decreased. This phenomenon has been reproduced by solving the rate equations assuming the re-combination between the photo generated electron (pe) and the injected hole (h), which is strong related the device structures. operant EDMR photogenerated carrier dynamics field-effect transistor TIPS-pentacene spin dynamics Full Text Additional Declarations No competing interests reported. Cite Share Download PDF Status: Published Journal Publication published 15 Sep, 2024 Read the published version in Applied Magnetic Resonance → Version 1 posted Editorial decision: Revision requested 20 Aug, 2024 Reviews received at journal 03 Aug, 2024 Reviewers agreed at journal 25 Jul, 2024 Reviewers invited by journal 25 Jul, 2024 Editor assigned by journal 25 Jul, 2024 Submission checks completed at journal 25 Jul, 2024 First submitted to journal 24 Jul, 2024 You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. 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Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-4798591","acceptedTermsAndConditions":true,"allowDirectSubmit":false,"archivedVersions":[],"articleType":"Research Article","associatedPublications":[],"authors":[{"id":342864405,"identity":"4fdef460-8b9f-4a20-9aff-14a809d8c5ce","order_by":0,"name":"Hina Kobayashi","email":"","orcid":"","institution":"Osaka City Univ","correspondingAuthor":false,"prefix":"","firstName":"Hina","middleName":"","lastName":"Kobayashi","suffix":""},{"id":342864408,"identity":"7d605bcf-9fbf-4928-84f1-7ffa4a889ce4","order_by":1,"name":"Michio M. 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We report the electrically detected magnetic resonance (EDMR) study of a drop-casted film of 6,13–bis((triisopropylsilyl)ethynyl)pentacene (TIPS-Pn) under the field-effect transistor (FET) device operating condition. The EDMR signal could not observed without light-irradiation even under the FET device operating condition (carrier injected condition). This means the electrically injected carries (e-h pair) does not have spin polarization and notable spin-selective pathway after the charge injection. Under the light-irradiation, the EDMR signals was detected in the FET device both with and without the VGS (gate-source voltage) applied to the FET device and the intensity depended on the VGS. When 0 \u003e VGS \u003e VTH, which is near the threshold voltage of the carrier injection, the signal intensity increased with increasing |VGS| but in the region VGS \u003c VTH (|VGS| \u003e |VTH|), the EDMR intensity decreased. 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