Tunable orbital Chern insulating states in crystalline Bernal-tetralayer graphene

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Abstract Multilayer graphene systems, with their rich interplay of valley and layer degrees of freedom and associated order parmeters, host a variety of topological phenomena. Recent studies have induced moiré superlattices and spin-orbit proximity effects in multilayer graphene to realize quantum anomalous Hall (QAH) effects driven by orbital ferromagnetism. Here, we report the observation of a Hall resistance quantized at ±h/6e², which persists down to 20 mT, with an anomalous Hall effect in Bernal-stacked tetralayer graphene near charge neutrality. Experimental evidence of magnetic field, electric field and carrier density tunability of a ferromagnetic order provides convincing evidence for a Chern insulating state with a Chern number of 6. A theory reveals that this arises from an electric-field-driven topological phase transition enabled by a layer antiferro-valleytric order that couples the valley and layer degrees of freedom. Our findings uncover previously unrecognized layer-valley antiferroic orders and their resulting highly tunable orbital Chern insulating states in the single crystalline material, achieved without moiré engineering or spin-orbit coupling.
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Tunable orbital Chern insulating states in crystalline Bernal-tetralayer graphene | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Article Tunable orbital Chern insulating states in crystalline Bernal-tetralayer graphene Sungjae Cho, Taehun Lee, Jinkyu Kim, Xilin Feng, Zi-Ting Sun, and 8 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-5941612/v1 This work is licensed under a CC BY 4.0 License Status: Under Review Version 1 posted You are reading this latest preprint version Abstract Multilayer graphene systems, with their rich interplay of valley and layer degrees of freedom and associated order parmeters, host a variety of topological phenomena. Recent studies have induced moiré superlattices and spin-orbit proximity effects in multilayer graphene to realize quantum anomalous Hall (QAH) effects driven by orbital ferromagnetism. Here, we report the observation of a Hall resistance quantized at ±h/6e², which persists down to 20 mT, with an anomalous Hall effect in Bernal-stacked tetralayer graphene near charge neutrality. Experimental evidence of magnetic field, electric field and carrier density tunability of a ferromagnetic order provides convincing evidence for a Chern insulating state with a Chern number of 6. A theory reveals that this arises from an electric-field-driven topological phase transition enabled by a layer antiferro-valleytric order that couples the valley and layer degrees of freedom. Our findings uncover previously unrecognized layer-valley antiferroic orders and their resulting highly tunable orbital Chern insulating states in the single crystalline material, achieved without moiré engineering or spin-orbit coupling. Physical sciences/Physics/Condensed-matter physics/Topological matter/Topological insulators Physical sciences/Physics/Condensed-matter physics/Quantum Hall Physical sciences/Materials science/Nanoscale materials/Graphene/Electronic properties and devices Full Text Additional Declarations There is NO Competing Interest. Supplementary Files ExtendedDataTunableorbitalCherninsulatingstatesincrystallineBernaltetralayergraphene.pdf Extended Data_Tunable orbital Chern insulating states in crystalline Bernal-tetralayer graphene SupplementaryInformationTunableorbitalCherninsulatingstatesincrystallineBernaltetralayergraphene.pdf Supplementary Information_Tunable orbital Chern insulating states in crystalline Bernal-tetralayer graphene Cite Share Download PDF Status: Under Review Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. 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