Fabrication Of Poly (O-Toluidine) (POT) For DC Conductivity And Schottky Diodes Application By Sandwiching Nano Zno As An Interfacial Region By In Situ Polymerization Technique

Abstract The influence of nano ZnO in Poly (O-toluidine) for Schottky diode application was prepared by in situ chemical polymerization method with different weight perctange of nano zinc oxide. FTIR results reveals that the amorphous nature has been faded due to the addition of nano zinc oxide and thus it was effective for crystallinity. SEM images proves that the uniformity arrangement of particles in spherical shape and the composition of particles in the POT-n-ZnO is proved from the EDAX analysis The current increase inside the sample increases due to the external source of light, electrical conductivity inside the sample has enhanced due to increase in Zinc oxide (nano) concentration. DC Conductivity of the prepared samples was high and POT doped with 75wt% of nano ZnO shows highly appropriateness material as direct current conducting substance. The results of this work disclose that the material is appropriate for diode due to increase in barrier height and ideality factor and another factor was forward bias current enhances in all the samples while reverse biased current was fade. Scope of this work was to fabricate the diode and conducting material with cost effective, high yield and vastly efficient material.