Effect of hydrogen annealing treat on the recrystallization of the β-Ga2O3 grains fabricated by chemical vapor deposition

Effect of hydrogen annealing treat on the recrystallization of the β-Ga2O3 grains fabricated by chemical vapor deposition | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Effect of hydrogen annealing treat on the recrystallization of the β-Ga 2 O 3 grains fabricated by chemical vapor deposition Yi Cheng, Tianshuo Liu, Nan Sun, Wenqian Wang, Fanghao Zhu, Yi Guan, and 1 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-8955029/v1 This work is licensed under a CC BY 4.0 License Status: Posted Version 1 posted You are reading this latest preprint version Abstract β-Ga 2 O 3 material with wide band gap and high radiation resistance, is potential in the application of X-ray radiation detections, and UV photoelectric detectors. The detector properties, such as sensitivity, response seed and stability, strong depend on the crystal quality of β-Ga 2 O 3 material. In this paper, β-Ga 2 O 3 thin films composed of small crystalline grains were fabricated on sapphire substrates using the chemical vapor deposition technique. The thin films underwent annealing treatment in oxygen and a mixed ambient (5% H 2 +95% Ar), respectively. The effects of annealing on the structural, surface morphological and optical properties were investigated. Overall, the β-Ga 2 O 3 thin films annealed in the hydrogen ambient displayed the best recrystallization characteristics, the mechanism was discussed. The role of hydrogen quietly differed to oxygen during the annealing treatment, hydrogen promoted the decomposition of β-Ga 2 O 3 grains, followed by regrowth of β-Ga 2 O 3 with a preferred orientation, where decomposition and regrowth occurred competitively. The crystalline grains presented a gradual increase in size from as-grown to O 2 -annealed and H 2 -annealed β-Ga 2 O 3 thin films. Meanwhile, the grains annealed in hydrogen displayed a distinct alignment. The epitaxial relationships between the β-Ga 2 O 3 thin films and the sapphire substrate were investigated. Photoluminescence and absorption spectra were measured, the emission peaks fitted by Gauss functions, and the deduced optical bandgap indicated the influence of the annealing treatment on the recrystallization of β-Ga 2 O 3 . β-Ga2O3 grains chemical vapor deposition annealing treatment epitaxial growth recrystallization Full Text Additional Declarations No competing interests reported. Cite Share Download PDF Status: Posted Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. 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Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-8955029","acceptedTermsAndConditions":true,"allowDirectSubmit":true,"archivedVersions":[],"articleType":"Research Article","associatedPublications":[],"authors":[{"id":614182200,"identity":"6731c649-18e3-48e9-9585-a5677741c8a3","order_by":0,"name":"Yi 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deposition\u003c/p\u003e","fulltext":[],"fulltextSource":"","fullText":"","funders":[],"hasAdminPriorityOnWorkflow":false,"hasManuscriptDocX":false,"hasOptedInToPreprint":true,"hasPassedJournalQc":"","hasAnyPriority":false,"hideJournal":true,"highlight":"","institution":"","isAcceptedByJournal":false,"isAuthorSuppliedPdf":true,"isDeskRejected":"","isHiddenFromSearch":false,"isInQc":false,"isInWorkflow":false,"isPdf":true,"isPdfUpToDate":true,"isWithdrawnOrRetracted":false,"journal":{"display":true,"email":"[email protected]","identity":"researchsquare","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":true,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"/submission","title":"Research Square","twitterHandle":"researchsquare","acdcEnabled":true,"dfaEnabled":false,"editorialSystem":"","reportingPortfolio":"","inReviewEnabled":false,"inReviewRevisionsEnabled":true},"keywords":"β-Ga2O3 grains, chemical vapor deposition, annealing treatment, epitaxial growth, recrystallization","lastPublishedDoi":"10.21203/rs.3.rs-8955029/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-8955029/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"\u003cp\u003eβ-Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3 \u003c/sub\u003ematerial with wide band gap and high radiation resistance, is potential in the application of X-ray radiation detections, and UV photoelectric detectors. The detector properties, such as sensitivity, response seed and stability, strong depend on the crystal quality of β-Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e material. In this paper, β-Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e thin films composed of small crystalline grains were fabricated on sapphire substrates using the chemical vapor deposition technique. The thin films underwent annealing treatment in oxygen and a mixed ambient (5% H\u003csub\u003e2\u003c/sub\u003e+95% Ar), respectively. The effects of annealing on the structural, surface morphological and optical properties were investigated. Overall, the β-Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e thin films annealed in the hydrogen ambient displayed the best recrystallization characteristics, the mechanism was discussed. The role of hydrogen quietly differed to oxygen during the annealing treatment, hydrogen promoted the decomposition of β-Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e grains, followed by regrowth of β-Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e with a preferred orientation, where decomposition and regrowth occurred competitively. The crystalline grains presented a gradual increase in size from as-grown to O\u003csub\u003e2\u003c/sub\u003e-annealed and H\u003csub\u003e2\u003c/sub\u003e-annealed β-Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e thin films. Meanwhile, the grains annealed in hydrogen displayed a distinct alignment. The epitaxial relationships between the β-Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e thin films and the sapphire substrate were investigated. Photoluminescence and absorption spectra were measured, the emission peaks fitted by Gauss functions, and the deduced optical bandgap indicated the influence of the annealing treatment on the recrystallization of β-Ga\u003csub\u003e2\u003c/sub\u003eO\u003csub\u003e3\u003c/sub\u003e.\u003c/p\u003e","manuscriptTitle":"Effect of hydrogen annealing treat on the recrystallization of the β-Ga2O3 grains fabricated by chemical vapor deposition","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2026-04-02 14:59:02","doi":"10.21203/rs.3.rs-8955029/v1","editorialEvents":[{"type":"communityComments","content":0}],"status":"published","journal":{"display":true,"email":"[email protected]","identity":"researchsquare","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":true,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"/submission","title":"Research Square","twitterHandle":"researchsquare","acdcEnabled":true,"dfaEnabled":false,"editorialSystem":"","reportingPortfolio":"","inReviewEnabled":false,"inReviewRevisionsEnabled":true}}],"origin":"","ownerIdentity":"c9525a1c-7788-4f1b-b42c-96f94dc55fb6","owner":[],"postedDate":"April 2nd, 2026","published":true,"recentEditorialEvents":[{"type":"decision","content":"Revision requested","date":"2026-05-15T22:31:19+00:00","index":"","fulltext":""},{"type":"editorInvitedReview","content":"","date":"2026-05-10T13:12:43+00:00","index":31,"fulltext":""},{"type":"reviewerAgreed","content":"157717158158626173889029960518005767487","date":"2026-05-07T09:24:50+00:00","index":30,"fulltext":""},{"type":"reviewerAgreed","content":"18178233593459652984145339781636405672","date":"2026-05-07T07:33:31+00:00","index":29,"fulltext":""},{"type":"reviewerAgreed","content":"126482880190989512173836751465785665709","date":"2026-05-07T01:54:14+00:00","index":27,"fulltext":""}],"rejectedJournal":[],"revision":"","amendment":"","status":"posted","subjectAreas":[],"tags":[],"updatedAt":"2026-05-15T22:38:36+00:00","versionOfRecord":[],"versionCreatedAt":"2026-04-02 14:59:02","video":"","vorDoi":"","vorDoiUrl":"","workflowStages":[]},"version":"v1","identity":"rs-8955029","journalConfig":"researchsquare"},"__N_SSP":true},"page":"/article/[identity]/[[...version]]","query":{"redirect":"/article/rs-8955029","identity":"rs-8955029","version":["v1"]},"buildId":"XKTyCvWXoU3ODBz1xrDgd","isFallback":false,"isExperimentalCompile":false,"dynamicIds":[84888],"gssp":true,"scriptLoader":[]}