Electric-Field Programmable Rashba Qubits: Cross-Material Operating Windows for Frequency Allocation and Leakage Control

Electric-Field Programmable Rashba Qubits: Cross-Material Operating Windows for Frequency Allocation and Leakage Control | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Electric-Field Programmable Rashba Qubits: Cross-Material Operating Windows for Frequency Allocation and Leakage Control M.A.M. Sharaf This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-7781721/v1 This work is licensed under a CC BY 4.0 License Status: Posted Version 1 posted You are reading this latest preprint version Abstract This work presents a cross-material, design-oriented framework for electrically tunable spin–orbit qubits, focusing on realistic operating windows for four key semiconductor platforms: GaAs, InAs, InSb, and SiGe. Building on validated two-band models, we introduce a unified set of energy-based figures of merit— qubit gap ($\Delta_q$), isolation energy ($\Delta_{iso}$), and anharmonicity ($A$)—to assess qubit performance and leakage suppression within experimentally achievable magnetic fields (GaAs/SiGe below 2 T; InAs/InSb up to 5 T). The framework reveals explicit trade-offs between controllability and fidelity by mapping the combined effects of Rashba ($\alpha$) and Dresselhaus ($\beta$) spin–orbit couplings, vertical electric field $F$, and valley splitting parameters ($\Delta_v$, $t_v$). Results highlight that InAs offers strong intrinsic tunability with minimal leakage, while GaAs requires careful co-tuning of $\alpha$ and $\beta$, and SiGe performance depends critically on maximizing $\Delta_v$ and minimizing $t_v$. These findings provide practical guidelines for material selection and device optimization, bridging theoretical modeling with experimental implementation for next-generation semiconductor qubits. Full Text Additional Declarations No competing interests reported. Cite Share Download PDF Status: Posted Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-7781721","acceptedTermsAndConditions":true,"allowDirectSubmit":true,"archivedVersions":[],"articleType":"Research Article","associatedPublications":[],"authors":[{"id":525361315,"identity":"1484c5b8-d23f-4d7e-8d3d-4c46d6b022cd","order_by":0,"name":"M.A.M. 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Control","fulltext":[],"fulltextSource":"","fullText":"","funders":[],"hasAdminPriorityOnWorkflow":false,"hasManuscriptDocX":false,"hasOptedInToPreprint":true,"hasPassedJournalQc":"","hasAnyPriority":true,"hideJournal":true,"highlight":"","institution":"","isAcceptedByJournal":false,"isAuthorSuppliedPdf":true,"isDeskRejected":"","isHiddenFromSearch":false,"isInQc":false,"isInWorkflow":false,"isPdf":true,"isPdfUpToDate":true,"isWithdrawnOrRetracted":false,"journal":{"display":true,"email":"[email protected]","identity":"researchsquare","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":true,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"/submission","title":"Research 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Building on validated two-band models, we introduce a unified set of energy-based figures of merit— qubit gap ($\\Delta_q$), isolation energy ($\\Delta_{iso}$), and anharmonicity ($A$)—to assess qubit performance and leakage suppression within experimentally achievable magnetic fields (GaAs/SiGe below 2~T; InAs/InSb up to 5~T). The framework reveals explicit trade-offs between controllability and fidelity by mapping the combined effects of Rashba ($\\alpha$) and Dresselhaus ($\\beta$) spin–orbit couplings, vertical electric field $F$, and valley splitting parameters ($\\Delta_v$, $t_v$). Results highlight that InAs offers strong intrinsic tunability with minimal leakage, while GaAs requires careful co-tuning of $\\alpha$ and $\\beta$, and SiGe performance depends critically on maximizing $\\Delta_v$ and minimizing $t_v$. These findings provide practical guidelines for material selection and device optimization, bridging theoretical modeling with experimental implementation for next-generation semiconductor qubits.","manuscriptTitle":"Electric-Field Programmable Rashba Qubits: Cross-Material Operating Windows for Frequency Allocation and Leakage Control","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2025-10-07 13:06:22","doi":"10.21203/rs.3.rs-7781721/v1","editorialEvents":[{"type":"communityComments","content":0}],"status":"published","journal":{"display":true,"email":"[email protected]","identity":"researchsquare","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":true,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"/submission","title":"Research Square","twitterHandle":"researchsquare","acdcEnabled":true,"dfaEnabled":false,"editorialSystem":"","reportingPortfolio":"","inReviewEnabled":false,"inReviewRevisionsEnabled":true}}],"origin":"","ownerIdentity":"964488e2-0630-47cd-b445-11ee21774d36","owner":[],"postedDate":"October 7th, 2025","published":true,"recentEditorialEvents":[],"rejectedJournal":[],"revision":"","amendment":"","status":"posted","subjectAreas":[],"tags":[],"updatedAt":"2025-10-28T16:53:12+00:00","versionOfRecord":[],"versionCreatedAt":"2025-10-07 13:06:22","video":"","vorDoi":"","vorDoiUrl":"","workflowStages":[]},"version":"v1","identity":"rs-7781721","journalConfig":"researchsquare"},"__N_SSP":true},"page":"/article/[identity]/[[...version]]","query":{"redirect":"/article/rs-7781721","identity":"rs-7781721","version":["v1"]},"buildId":"8U1c8b4HqxoKbykW_rLl7","isFallback":false,"isExperimentalCompile":false,"dynamicIds":[84888],"gssp":true,"scriptLoader":[]}