BAlGaN light emitting diode emitting at 350 nm
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Abstract
In this work, we report the first demonstration of an ultraviolet light-emitting diode (LED) with boron-containing multiple quantum wells. Electroluminescence emission from the BAlGaN LED was observed at 350 nm, with higher intensity compared to the AlGaN reference LED. A higher operating voltage compared to the reference LED was also observed which may be attributable to a nanomasking behaviour of boron in (Al)GaN alloys.
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- europepmc
- last seen: 2026-05-19T01:45:01.086888+00:00