III-Nitride MEMS Drum Resonators on Flexible Metal Substrates

III-Nitride MEMS Drum Resonators on Flexible Metal Substrates | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Article III-Nitride MEMS Drum Resonators on Flexible Metal Substrates Jean-Paul Salvestrini, Ali Kassem, Rajat Gujrati, David Bourrier, and 8 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-5788606/v1 This work is licensed under a CC BY 4.0 License Status: Published Journal Publication published 24 Oct, 2025 Read the published version in Microsystems & Nanoengineering → Version 1 posted 10 You are reading this latest preprint version Abstract We present a simple and robust process for fabricating III-Nitride (III-N) mechanical resonators on flexible metal substrates. This method combines Van der Waals epitaxy of III-N epilayers with the deposition of a thick metal stressor atop the III-N layers. During thermal treatment, the 30 µm thick metal stressor deposited on a 300 nm AlGaN / 500 nm GaN layer grown on a 3 nm two-dimensional hexagonal-Boron Nitride (2D h-BN) release layer, initiates a one-step Self-Lift-Off and Transfer (SLOT) process. This process effectively transfers the III-N heterostructure from the h-BN/Sapphire growth wafer to the flexible metal stressor substrate. Additional local etching of the metal stressor and deposition of front electrodes allow for releasing self-standing III-N layers with integrated actuation. Fabricated III-N MEMS were analyzed using optical profilometry and laser Doppler vibrometer, enabling the observation of static deflections and distinct vibration modes. Finite element method (FEM) simulations were also performed to further understand experimental observations and assess the mechanical properties of the released III-N layers, particularly enabling the estimation of stress in the GaN and AlGaN released layers. This straightforward approach not only provides a practical solution for cost-effective III-N MEMS resonators but also ensures flexibility, and crack-free structures. Physical sciences/Engineering/Electrical and electronic engineering Physical sciences/Materials science Thermomechanical self-lift-off and transfer free-standing III-N resonators Flexible MEMS Van der Waals epitaxy 2D hexagonal-Boron Nitride Metal stressor Gallium Nitride Full Text Additional Declarations There is no conflict of interest Cite Share Download PDF Status: Published Journal Publication published 24 Oct, 2025 Read the published version in Microsystems & Nanoengineering → Version 1 posted Editorial decision: revise 09 Mar, 2025 Review # 2 received at journal 05 Mar, 2025 Review # 3 received at journal 04 Mar, 2025 Reviewer # 3 agreed at journal 18 Feb, 2025 Reviewer # 2 agreed at journal 16 Feb, 2025 Reviewer # 1 agreed at journal 14 Feb, 2025 Reviewers invited by journal 12 Feb, 2025 Submission checks completed at journal 09 Jan, 2025 Editor assigned by journal 08 Jan, 2025 First submitted to journal 08 Jan, 2025 You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. 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Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-5788606","acceptedTermsAndConditions":true,"allowDirectSubmit":false,"archivedVersions":[],"articleType":"Article","associatedPublications":[],"authors":[{"id":414608346,"identity":"2b43adac-891b-49a4-bc31-1a140ad0d825","order_by":0,"name":"Jean-Paul Salvestrini","email":"data:image/png;base64,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","orcid":"","institution":"Georgia Tech Europe","correspondingAuthor":true,"prefix":"","firstName":"Jean-Paul","middleName":"","lastName":"Salvestrini","suffix":""},{"id":414608347,"identity":"94d34de5-8237-40ab-afba-e076cc10659f","order_by":1,"name":"Ali Kassem","email":"","orcid":"https://orcid.org/0009-0006-6637-8462","institution":"Georgia Tech-CNRS IRL 2958","correspondingAuthor":false,"prefix":"","firstName":"Ali","middleName":"","lastName":"Kassem","suffix":""},{"id":414608348,"identity":"ebb8c122-9e4c-4d8e-84e2-44d2a0a4e19e","order_by":2,"name":"Rajat Gujrati","email":"","orcid":"","institution":"Georgia Tech - CNRS IRL 2958","correspondingAuthor":false,"prefix":"","firstName":"Rajat","middleName":"","lastName":"Gujrati","suffix":""},{"id":414608349,"identity":"3754b4a8-f485-453b-a1c1-61ebd687f703","order_by":3,"name":"David Bourrier","email":"","orcid":"","institution":"Laboratory for Analysis and Architecture of Systems (LAAS)","correspondingAuthor":false,"prefix":"","firstName":"David","middleName":"","lastName":"Bourrier","suffix":""},{"id":414608350,"identity":"75edf52e-8f6d-4dd9-8461-ea30a975dbe8","order_by":4,"name":"Cédric Ayela","email":"","orcid":"","institution":"Univ. Bordeaux, IMS, CNRS, UMR 5218, Bordeaux INP, ENSCBP","correspondingAuthor":false,"prefix":"","firstName":"Cédric","middleName":"","lastName":"Ayela","suffix":""},{"id":414608351,"identity":"f89f12a4-e514-4cbb-8923-a418b38fabf2","order_by":5,"name":"Fabrice Mathieu","email":"","orcid":"","institution":"Laboratory for Analysis and Architecture of Systems (LAAS)","correspondingAuthor":false,"prefix":"","firstName":"Fabrice","middleName":"","lastName":"Mathieu","suffix":""},{"id":414608352,"identity":"4f21ce73-7bc1-4501-8202-097ce7413b0f","order_by":6,"name":"Isabelle Dufour","email":"","orcid":"https://orcid.org/0000-0002-1986-1463","institution":"CNRS Université de Bordeaux","correspondingAuthor":false,"prefix":"","firstName":"Isabelle","middleName":"","lastName":"Dufour","suffix":""},{"id":414608353,"identity":"5dda4112-ab05-46a2-a674-f5746cc441c6","order_by":7,"name":"Liviu Nicu","email":"","orcid":"","institution":"Université de Toulouse","correspondingAuthor":false,"prefix":"","firstName":"Liviu","middleName":"","lastName":"Nicu","suffix":""},{"id":414608354,"identity":"c22f34df-c645-408c-be59-9e6c9e67b5ab","order_by":8,"name":"Suresh Sundaram","email":"","orcid":"","institution":"Georgia Tech Europe","correspondingAuthor":false,"prefix":"","firstName":"Suresh","middleName":"","lastName":"Sundaram","suffix":""},{"id":414608355,"identity":"61b3674c-5d7a-477c-a0c7-15569479078e","order_by":9,"name":"William Hunt","email":"","orcid":"https://orcid.org/0000-0003-3144-8871","institution":"Georgia Tech","correspondingAuthor":false,"prefix":"","firstName":"William","middleName":"","lastName":"Hunt","suffix":""},{"id":414608356,"identity":"148f30be-c0d2-4529-8c06-90dabe86f89e","order_by":10,"name":"Abdallah Ougazzaden","email":"","orcid":"","institution":"Georgia Tech Europe","correspondingAuthor":false,"prefix":"","firstName":"Abdallah","middleName":"","lastName":"Ougazzaden","suffix":""},{"id":414608357,"identity":"ab6b62d3-d47f-4a98-808b-4b4fbcced6f4","order_by":11,"name":"Thierry Leichlé","email":"","orcid":"","institution":"Georgia Institute of Technology","correspondingAuthor":false,"prefix":"","firstName":"Thierry","middleName":"","lastName":"Leichlé","suffix":""}],"badges":[],"createdAt":"2025-01-08 11:30:10","currentVersionCode":1,"declarations":"","doi":"10.21203/rs.3.rs-5788606/v1","doiUrl":"https://doi.org/10.21203/rs.3.rs-5788606/v1","draftVersion":[],"editorialEvents":[{"content":"https://doi.org/10.1038/s41378-025-00995-3","type":"published","date":"2025-10-24T04:00:00+00:00"}],"editorialNote":"","failedWorkflow":false,"files":[{"id":94432311,"identity":"eb54f43f-e95d-4d9c-a141-fe568ac71969","added_by":"auto","created_at":"2025-10-27 14:17:57","extension":"pdf","order_by":1,"title":"","display":"","copyAsset":false,"role":"manuscript-pdf","size":1269077,"visible":true,"origin":"","legend":"","description":"","filename":"SLOTMEMSPaperVFAK2025.pdf","url":"https://assets-eu.researchsquare.com/files/rs-5788606/v1_covered_b94d403c-9771-45ef-978b-c23f44d385ee.pdf"}],"financialInterests":"There is no conflict of interest","formattedTitle":"III-Nitride MEMS Drum Resonators on Flexible Metal Substrates","fulltext":[],"fulltextSource":"","fullText":"","funders":[],"hasAdminPriorityOnWorkflow":false,"hasManuscriptDocX":false,"hasOptedInToPreprint":true,"hasPassedJournalQc":"","hasAnyPriority":false,"hideJournal":false,"highlight":"","institution":"","isAcceptedByJournal":true,"isAuthorSuppliedPdf":true,"isDeskRejected":"","isHiddenFromSearch":false,"isInQc":false,"isInWorkflow":false,"isPdf":true,"isPdfUpToDate":true,"isWithdrawnOrRetracted":false,"journal":{"display":true,"email":"[email protected]","identity":"microsystems-and-nanoengineering","isNatureJournal":false,"hasQc":false,"allowDirectSubmit":false,"externalIdentity":"micronano","sideBox":"Learn more about [Microsystems \u0026 Nanoengineering](http://www.nature.com/micronano/)","snPcode":"41378","submissionUrl":"https://mts-micronano.nature.com/","title":"Microsystems \u0026 Nanoengineering","twitterHandle":"","acdcEnabled":true,"dfaEnabled":true,"editorialSystem":"ejp","reportingPortfolio":"Nature AJ","inReviewEnabled":true,"inReviewRevisionsEnabled":true},"keywords":"Thermomechanical self-lift-off and transfer, free-standing III-N resonators, Flexible MEMS, Van der Waals epitaxy, 2D hexagonal-Boron Nitride, Metal stressor, Gallium Nitride","lastPublishedDoi":"10.21203/rs.3.rs-5788606/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-5788606/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"\u003cp\u003eWe present a simple and robust process for fabricating III-Nitride (III-N) mechanical resonators on flexible metal substrates. This method combines Van der Waals epitaxy of III-N epilayers with the deposition of a thick metal stressor atop the III-N layers. During thermal treatment, the 30 \u0026micro;m thick metal stressor deposited on a 300 nm AlGaN / 500 nm GaN layer grown on a 3 nm two-dimensional hexagonal-Boron Nitride (2D h-BN) release layer, initiates a one-step Self-Lift-Off and Transfer (SLOT) process. This process effectively transfers the III-N heterostructure from the h-BN/Sapphire growth wafer to the flexible metal stressor substrate. Additional local etching of the metal stressor and deposition of front electrodes allow for releasing self-standing III-N layers with integrated actuation. Fabricated III-N MEMS were analyzed using optical profilometry and laser Doppler vibrometer, enabling the observation of static deflections and distinct vibration modes. Finite element method (FEM) simulations were also performed to further understand experimental observations and assess the mechanical properties of the released III-N layers, particularly enabling the estimation of stress in the GaN and AlGaN released layers. This straightforward approach not only provides a practical solution for cost-effective III-N MEMS resonators but also ensures flexibility, and crack-free structures.\u003c/p\u003e","manuscriptTitle":"III-Nitride MEMS Drum Resonators on Flexible Metal Substrates","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2025-02-14 11:43:47","doi":"10.21203/rs.3.rs-5788606/v1","editorialEvents":[{"type":"communityComments","content":0},{"type":"decision","content":"revise","date":"2025-03-10T01:07:51+00:00","index":"","fulltext":""},{"type":"editorInvitedReview","content":"This content is not available.","date":"2025-03-05T12:17:55+00:00","index":2,"fulltext":"This content is not available."},{"type":"editorInvitedReview","content":"This content is not available.","date":"2025-03-04T06:59:59+00:00","index":3,"fulltext":"This content is not available."},{"type":"reviewerAgreed","content":"This content is not available.","date":"2025-02-18T14:42:15+00:00","index":3,"fulltext":"This content is not available."},{"type":"reviewerAgreed","content":"This content is not available.","date":"2025-02-17T03:27:43+00:00","index":2,"fulltext":"This content is not available."},{"type":"reviewerAgreed","content":"This content is not available.","date":"2025-02-14T08:46:21+00:00","index":1,"fulltext":"This content is not available."},{"type":"reviewersInvited","content":"","date":"2025-02-12T07:21:12+00:00","index":"","fulltext":""},{"type":"checksComplete","content":"","date":"2025-01-09T05:45:47+00:00","index":"","fulltext":""},{"type":"editorAssigned","content":"","date":"2025-01-08T11:25:12+00:00","index":"","fulltext":""},{"type":"submitted","content":"Microsystems \u0026 Nanoengineering","date":"2025-01-08T11:25:11+00:00","index":"","fulltext":""}],"status":"published","journal":{"display":true,"email":"[email protected]","identity":"microsystems-and-nanoengineering","isNatureJournal":false,"hasQc":false,"allowDirectSubmit":false,"externalIdentity":"micronano","sideBox":"Learn more about [Microsystems \u0026 Nanoengineering](http://www.nature.com/micronano/)","snPcode":"41378","submissionUrl":"https://mts-micronano.nature.com/","title":"Microsystems \u0026 Nanoengineering","twitterHandle":"","acdcEnabled":true,"dfaEnabled":true,"editorialSystem":"ejp","reportingPortfolio":"Nature AJ","inReviewEnabled":true,"inReviewRevisionsEnabled":true}}],"origin":"","ownerIdentity":"b48fe287-e0eb-4018-8422-b2fc67cb588b","owner":[],"postedDate":"February 14th, 2025","published":true,"recentEditorialEvents":[],"rejectedJournal":[],"revision":"","amendment":"","status":"published-in-journal","subjectAreas":[{"id":44212041,"name":"Physical sciences/Engineering/Electrical and electronic engineering"},{"id":44212042,"name":"Physical sciences/Materials science"}],"tags":[],"updatedAt":"2025-10-27T12:43:40+00:00","versionOfRecord":{"articleIdentity":"rs-5788606","link":"https://doi.org/10.1038/s41378-025-00995-3","journal":{"identity":"microsystems-and-nanoengineering","isVorOnly":false,"title":"Microsystems \u0026 Nanoengineering"},"publishedOn":"2025-10-24 04:00:00","publishedOnDateReadable":"October 24th, 2025"},"versionCreatedAt":"2025-02-14 11:43:47","video":"","vorDoi":"10.1038/s41378-025-00995-3","vorDoiUrl":"https://doi.org/10.1038/s41378-025-00995-3","workflowStages":[]},"version":"v1","identity":"rs-5788606","journalConfig":"researchsquare"},"__N_SSP":true},"page":"/article/[identity]/[[...version]]","query":{"redirect":"/article/rs-5788606","identity":"rs-5788606","version":["v1"]},"buildId":"8U1c8b4HqxoKbykW_rLl7","isFallback":false,"isExperimentalCompile":false,"dynamicIds":[84888],"gssp":true,"scriptLoader":[]}