Multifunctional Antiferromagnetic Materialswith Giant Piezomagnetism and Noncollinear Spin Current | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Article Multifunctional Antiferromagnetic Materialswith Giant Piezomagnetism and Noncollinear Spin Current Hai-Yang Ma, Mengli Hu, Nana Li, Jianpeng Liu, Wang Yao, Jinfeng Jia, and 1 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-266315/v1 This work is licensed under a CC BY 4.0 License Status: Published Journal Publication published 14 May, 2021 Read the published version in Nature Communications → Version 1 posted You are reading this latest preprint version Abstract We propose a new type of spin-valley locking (SVL), named C-paired SVL, in antiferromagnetic systems, which directly connects the spin/valley space with the real space, and hence enables both static and dynamical controls of spin and valley to realize a multifunctional antiferromagnetic material. The new emergent quantum degree of freedom in the C-paired SVL is comprised of spin-polarized valleys related by a crystal symmetry instead of the time-reversal symmetry. Thus, both spin and valley can be accessed by simply breaking the corresponding crystal symmetry. Typically, one can use a strain field to induce a large net valley polarization/magnetization and use a charge current to generate a large noncollinear spin current. We predict the realization of the C-paired SVL in monolayer V2Se2O, which indeed exhibits giant piezomagnetism and can generate a large transverse spin current. Our findings provide unprecedented opportunities to integrate various controls of spin and valley with nonvolatile information storage in a single material, which is highly desirable for versatile fundamental research and device applications. Hard Condensed-matter Physics Soft Condensed-matter Physics Magnetics Materials and Devices spin-valley locking (SVL) antiferromagnetic systems Figures Figure 1 Figure 2 Figure 3 Figure 4 Full Text Additional Declarations There is NO Competing Interest. Supplementary Files SupplementaryInformation.pdf Cite Share Download PDF Status: Published Journal Publication published 14 May, 2021 Read the published version in Nature Communications → Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. 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Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-266315","acceptedTermsAndConditions":true,"allowDirectSubmit":false,"archivedVersions":[],"articleType":"Article","associatedPublications":[],"authors":[{"id":14647716,"identity":"c44ddce5-c2b5-45f8-839b-9b8ce5f97817","order_by":0,"name":"Hai-Yang Ma","email":"","orcid":"","institution":"Shanghai Jiao Tong University","correspondingAuthor":false,"prefix":"","firstName":"Hai-Yang","middleName":"","lastName":"Ma","suffix":""},{"id":14647717,"identity":"d8c2787d-f8be-4e04-a06a-8991bfd73070","order_by":1,"name":"Mengli Hu","email":"","orcid":"","institution":"Hong Kong University of Science and Technology","correspondingAuthor":false,"prefix":"","firstName":"Mengli","middleName":"","lastName":"Hu","suffix":""},{"id":14647718,"identity":"6c316e25-131a-4a14-a26c-238a597a9b92","order_by":2,"name":"Nana Li","email":"","orcid":"","institution":"Department of Physics, The Hong Kong University of Science and Technology","correspondingAuthor":false,"prefix":"","firstName":"Nana","middleName":"","lastName":"Li","suffix":""},{"id":14647719,"identity":"8a9a8ff4-4be3-4da5-a76d-b0fa5426d589","order_by":3,"name":"Jianpeng Liu","email":"","orcid":"","institution":"Department of Physics, The Hong Kong University of Science and Technology","correspondingAuthor":false,"prefix":"","firstName":"Jianpeng","middleName":"","lastName":"Liu","suffix":""},{"id":14647720,"identity":"0a30fbea-8e17-4417-a7cc-36889f2d6f15","order_by":4,"name":"Wang Yao","email":"","orcid":"https://orcid.org/0000-0003-2883-4528","institution":"University of Hong Kong","correspondingAuthor":false,"prefix":"","firstName":"Wang","middleName":"","lastName":"Yao","suffix":""},{"id":14647721,"identity":"831f13f7-a6b9-43b4-b818-72935e8c81f0","order_by":5,"name":"Jinfeng Jia","email":"","orcid":"https://orcid.org/0000-0002-9900-281X","institution":"Shanghai Jiao Tong University","correspondingAuthor":false,"prefix":"","firstName":"Jinfeng","middleName":"","lastName":"Jia","suffix":""},{"id":14647722,"identity":"cb9e8d55-ca37-4f6c-b32c-04040e75a9f4","order_by":6,"name":"Junwei Liu","email":"data:image/png;base64,iVBORw0KGgoAAAANSUhEUgAAAZAAAAAyAQMAAABI0h/eAAAABlBMVEX///8AAABVwtN+AAAACXBIWXMAAA7EAAAOxAGVKw4bAAAAkElEQVRIiWNgGAWjYBACPmYGBoMPIJYEG5Fa2IBaDGcANZCgBYiZeUjTws5jUGzbVlfHIN2WQKzDeAyMc9sOSzDIHDtAkpYDQIelN5CgxbKtjlQtjG3MQC1pRDuMrcCw59xhyTaJtATitPDzH95m8KOsjp9fIs2AOC0gi8BKiY0VMGB+QIrqUTAKRsEoGIEAADi0HFXtO89EAAAAAElFTkSuQmCC","orcid":"https://orcid.org/0000-0001-8051-7349","institution":"Department of Physics, The Hong Kong University of Science and Technology","correspondingAuthor":true,"prefix":"","firstName":"Junwei","middleName":"","lastName":"Liu","suffix":""}],"badges":[],"createdAt":"2021-02-22 09:51:14","currentVersionCode":1,"declarations":"","doi":"10.21203/rs.3.rs-266315/v1","doiUrl":"https://doi.org/10.21203/rs.3.rs-266315/v1","draftVersion":[],"editorialEvents":[{"content":"https://doi.org/10.1038/s41467-021-23127-7","type":"published","date":"2021-05-14T04:00:00+00:00"}],"editorialNote":"","failedWorkflow":false,"files":[{"id":6732265,"identity":"0fd6a1d0-f52e-453d-8631-52128bfca0ec","added_by":"auto","created_at":"2021-03-09 00:24:38","extension":"jpg","order_by":1,"title":"Figure 1","display":"","copyAsset":false,"role":"figure","size":137677,"visible":true,"origin":"","legend":"Schematics of C-paired spin-valley locking (SVL) and its properties. a, In T-paired SVL, the splitting between spin-up (red) and spin-down (blue) bands is from strong spin-orbit coupling (SOC) when inversion is broken, and the two valleys are related by the time reversal (T) symmetry. b, However, for C-paired SVL, the spin splitting is due to exchange couplings between itinerant electrons and local magnetic moments, and different valleys are related by a crystal symmetry (a mirror symmetry 𝑀𝜙 as an example). c, A strong valley polarization can be easily induced by a strain, and the piezomagnetism will simultaneously happen upon finite doping. M first increase linearly with the strain and finally gets saturated for large strain with M equal to n. d, Contribution to the charge current from different valleys are in general different, which gives rise to a non-zero spin current 𝑱𝑆=𝑱𝐾−𝑱𝐾′. One typical result (𝜙=𝜋6) is in the bottom panel. Both longitudinal and transverse spin currents depend on the electric field E direction 𝜃 with a period of 𝜋. When 𝜃=𝜙 or 𝜙+𝜋, where E does not break the mirror symmetry, the longitudinal charge currents from different valleys are the same, while transverse charge currents are exactly opposite, which result in pure spin currents perpendicular to the charge currents, i.e. spin Hall effect.","description":"","filename":"1.jpg","url":"https://assets-eu.researchsquare.com/files/rs-266315/v1/3799cf9d19639ba6a87d9416.jpg"},{"id":6732658,"identity":"67c674d9-cf1d-45fa-a377-c92d0872314e","added_by":"auto","created_at":"2021-03-09 00:27:38","extension":"jpg","order_by":2,"title":"Figure 2","display":"","copyAsset":false,"role":"figure","size":172243,"visible":true,"origin":"","legend":"C-paired SVL in monolayer V2Se2O. a, Two sublattice A and B in monolayer V2Se2O is related by a diagonal mirror symmetry 𝑀𝜙. b, 2D Néel anti-ferromagnetic (AFM) order with local magnetic moments located at V1 and V2 atoms with polarization labelled by black arrows. c, Monolayer V2Se2O is a semiconductor with gap around 0.7 eV. Red (blue) color is for spin up (down). d, The energy contour taken at 0.2 eV below the valance band maximum with possible typical inter-valley and intra-valley scattering vectors 𝒒1,2 and 𝒒3,4. (e, f) Calculated quasi-particle interference (QPI) patterns with and without considering the spin flipping. Due to SVL and weak SOC, inter-valley scattering is strongly suppressed. The existence of AFM order and C-paired SVL can be easily verified by the absence of scattering patterns around the corner in QPI image.","description":"","filename":"2.jpg","url":"https://assets-eu.researchsquare.com/files/rs-266315/v1/ffd4216e45d3938f279c4537.jpg"},{"id":6732657,"identity":"5eb08d74-b5ae-4f78-967d-41ff5025e250","added_by":"auto","created_at":"2021-03-09 00:27:38","extension":"jpg","order_by":3,"title":"Figure 3","display":"","copyAsset":false,"role":"figure","size":192927,"visible":true,"origin":"","legend":"Strain induced valley polarization and piezomagnetism in hole doped monolayer V2Se2O. a, Band structure evolution under different uniaxial strains along 𝑥 direction (-5%, 0% and -5%). Compared to the energy 𝐸(𝑋) at 𝑋 valley, the energy 𝐸(𝑌)at 𝑌 valley monotanesouly shifts down. b, Strain induced valley polarization, which defined as the energy difference between two valleys 𝑃=𝐸(𝑋)−𝐸(𝑌) . c, Diagram of strained induce net magnetization for different hole densities. d, For a given hole density, the net magnetization increases linearly with strain but has opposite direction for compressive and tensile strains in the region of small strains. When strain is large enough, all the carriers are polarized, and the net magnetization saturates. e, For any given strain, the magnetization is always equal to the number of holes per unit cell when the doping is light. However, for heavy doping, the magnetization is almost a constant that depends on the strain.","description":"","filename":"3.jpg","url":"https://assets-eu.researchsquare.com/files/rs-266315/v1/cf00ae3905c2553de816d515.jpg"},{"id":6732268,"identity":"ec1845fd-82e6-4be6-9d29-7585ae989cbe","added_by":"auto","created_at":"2021-03-09 00:24:38","extension":"jpg","order_by":4,"title":"Figure 4","display":"","copyAsset":false,"role":"figure","size":219185,"visible":true,"origin":"","legend":"Angle-dependent spin current and spin Hall effect in monolayer V2Se2O. a, Spin-resolved charge conductivity 𝜎 for electric field along 𝑥 direction. Inset is the dependency of 𝜎 on the carrier density n. For light doping, 𝜎 increases almost linearly with n. b, Angle-dependence of the longitudinal (L) and transverse (T) charge conductivity varying with the electric field direction 𝜃, taken at 0.2 eV below the valance band maximum. The transverse charge conductivity is always opposite for spin-up and spin-down electrons, and hence the transverse charge current is always zero and the charge current direction is always 𝜃. c, The corresponding angle-dependence of the longitudinal and transverse spin conductivity. d, Relation between directions of charge current 𝑱 and spin current 𝑱𝑆. The spin current always flows along the direction 𝜋−𝜃. In details, for 𝜃=±𝜋/2, the spin current will be along the same direction of the charge current, while for 𝜃=0 or 𝜋, the spin current flow along the opposite direction of the charge current. Moreover, for 𝜃=±𝜋/4 or ±3𝜋/4, there will be large spin Hall effect, where the spin current is perpendicular to the charge current.","description":"","filename":"4.jpg","url":"https://assets-eu.researchsquare.com/files/rs-266315/v1/88256c3af1a6063667fdb557.jpg"},{"id":15783533,"identity":"5d398ac7-4e38-469e-bb16-1555de134223","added_by":"auto","created_at":"2021-11-22 15:48:57","extension":"pdf","order_by":0,"title":"","display":"","copyAsset":false,"role":"manuscript-pdf","size":1663586,"visible":true,"origin":"","legend":"","description":"","filename":"Manuscript20210222.pdf","url":"https://assets-eu.researchsquare.com/files/rs-266315/v1_covered.pdf"},{"id":13600278,"identity":"223edc1c-84d8-4ca5-b618-9004ceb88f28","added_by":"auto","created_at":"2021-09-17 05:43:04","extension":"pdf","order_by":0,"title":"","display":"","copyAsset":false,"role":"manuscript-pdf","size":1658792,"visible":true,"origin":"","legend":"","description":"","filename":"Manuscript20210222.pdf","url":"https://assets-eu.researchsquare.com/files/rs-266315/v1_covered.pdf"},{"id":6732920,"identity":"e2552572-1006-4d11-b101-669ea24e6d5c","added_by":"auto","created_at":"2021-03-09 00:30:53","extension":"pdf","order_by":0,"title":"","display":"","copyAsset":false,"role":"manuscript-pdf","size":1814493,"visible":true,"origin":"","legend":"","description":"","filename":"Manuscript20210222.pdf","url":"https://assets-eu.researchsquare.com/files/rs-266315/v1_stamped.pdf"},{"id":6732269,"identity":"801fc8a5-7356-41f2-86c5-4f19d3dda69e","added_by":"auto","created_at":"2021-03-09 00:24:39","extension":"pdf","order_by":1,"title":"","display":"","copyAsset":false,"role":"supplement","size":24223418,"visible":true,"origin":"","legend":"","description":"","filename":"SupplementaryInformation.pdf","url":"https://assets-eu.researchsquare.com/files/rs-266315/v1/ef2fdffef2d9a91586478803.pdf"}],"financialInterests":"There is \u003cb\u003eNO\u003c/b\u003e Competing Interest.","formattedTitle":"Multifunctional Antiferromagnetic Materialswith Giant Piezomagnetism and Noncollinear Spin Current","fulltext":[{"header":"Full Text","content":"\u003cp\u003eThis preprint is available for \u003ca href='/article/rs-266315/latest.pdf' target='_blank'\u003edownload as a PDF\u003c/a\u003e.\u003c/p\u003e"}],"fulltextSource":"","fullText":"","funders":[],"hasAdminPriorityOnWorkflow":false,"hasManuscriptDocX":false,"hasOptedInToPreprint":true,"hasPassedJournalQc":"","hasAnyPriority":false,"hideJournal":false,"highlight":"","institution":"","isAcceptedByJournal":true,"isAuthorSuppliedPdf":true,"isDeskRejected":"","isHiddenFromSearch":false,"isInQc":false,"isInWorkflow":false,"isPdf":false,"isPdfUpToDate":true,"isWithdrawnOrRetracted":false,"journal":{"display":true,"email":"
[email protected]","identity":"nature-portfolio","isNatureJournal":true,"hasQc":false,"allowDirectSubmit":false,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"","title":"Nature Portfolio","twitterHandle":"","acdcEnabled":false,"dfaEnabled":false,"editorialSystem":"ejp","reportingPortfolio":"","inReviewEnabled":true,"inReviewRevisionsEnabled":false},"keywords":"spin-valley locking (SVL), antiferromagnetic systems","lastPublishedDoi":"10.21203/rs.3.rs-266315/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-266315/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"We propose a new type of spin-valley locking (SVL), named C-paired SVL, in antiferromagnetic systems, which directly connects the spin/valley space with the real space, and hence enables both static and dynamical controls of spin and valley to realize a multifunctional antiferromagnetic material. The new emergent quantum degree of freedom in the C-paired SVL is comprised of spin-polarized valleys related by a crystal symmetry instead of the time-reversal symmetry. Thus, both spin and valley can be accessed by simply breaking the corresponding crystal symmetry. Typically, one can use a strain field to induce a large net valley polarization/magnetization and use a charge current to generate a large noncollinear spin current. We predict the realization of the C-paired SVL in monolayer V2Se2O, which indeed exhibits giant piezomagnetism and can generate a large transverse spin current. Our findings provide unprecedented opportunities to integrate various controls of spin and valley with nonvolatile information storage in a single material, which is highly desirable for versatile fundamental research and device applications.","manuscriptTitle":"Multifunctional Antiferromagnetic Materialswith Giant Piezomagnetism and Noncollinear Spin Current","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2021-03-09 00:24:36","doi":"10.21203/rs.3.rs-266315/v1","editorialEvents":[],"status":"published","journal":{"display":true,"email":"
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