Wafer-Scale Integration of Freestanding Photonic Deviceswith Color Centers in Silicon Carbide

Wafer-Scale Integration of Freestanding Photonic Deviceswith Color Centers in Silicon Carbide | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Article Wafer-Scale Integration of Freestanding Photonic Deviceswith Color Centers in Silicon Carbide Sridhar Majety, Victoria Norman, Pranta Saha, Alex Rubin, Scott Dhuey, and 1 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-4566528/v1 This work is licensed under a CC BY 4.0 License Status: Under Review Version 1 posted 11 You are reading this latest preprint version Abstract Color center platforms have been at the forefront of quantum nanophotonics forapplications in quantum networking, computing, and sensing. However, large-scaledeployment of this technology has been stifled by a lack of ability to integrate photonicdevices at scale while maintaining the properties of quantum emitters. We address thischallenge in silicon carbide which has both commercially available wafer-scale substratesand is a host to color centers with desirable optical and spin properties. Using ionbeam etching at an angle, we develop a 5-inch wafer process for the fabrication oftriangular cross-section photonic devices in bulk 4H-SiC. The developed process has avariability in etch rate and etch angle of 5.4% and 2.9%, respectively. Furthermore, theintegrated color centers maintain their optical properties after the etch, thus achievingthe nanofabrication goal of wafer-scale nanofabrication in quantum-grade silicon carbide. Physical sciences/Nanoscience and technology/Nanoscale devices Physical sciences/Nanoscience and technology/Nanoscale devices/Nanophotonics and plasmonics Physical sciences/Nanoscience and technology/Nanoscale devices/Quantum information Physical sciences/Optics and photonics Full Text Additional Declarations No competing interests reported. Cite Share Download PDF Status: Under Review Version 1 posted Editorial decision: Revision requested 15 Aug, 2024 Reviews received at journal 14 Aug, 2024 Reviewers agreed at journal 22 Jul, 2024 Reviews received at journal 21 Jul, 2024 Reviews received at journal 18 Jul, 2024 Reviewers agreed at journal 09 Jul, 2024 Reviewers agreed at journal 09 Jul, 2024 Reviewers invited by journal 09 Jul, 2024 Editor assigned by journal 08 Jul, 2024 Submission checks completed at journal 01 Jul, 2024 First submitted to journal 11 Jun, 2024 You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. 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Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-4566528","acceptedTermsAndConditions":true,"allowDirectSubmit":false,"archivedVersions":[],"articleType":"Article","associatedPublications":[],"authors":[{"id":329945153,"identity":"3d877e07-0223-4c65-a058-9ba61682913b","order_by":0,"name":"Sridhar Majety","email":"","orcid":"","institution":"University of California, Davis","correspondingAuthor":false,"prefix":"","firstName":"Sridhar","middleName":"","lastName":"Majety","suffix":""},{"id":329945159,"identity":"692a561c-5518-4bf7-af9c-c34d38695027","order_by":1,"name":"Victoria Norman","email":"","orcid":"","institution":"University of California, Davis","correspondingAuthor":false,"prefix":"","firstName":"Victoria","middleName":"","lastName":"Norman","suffix":""},{"id":329945161,"identity":"b8d8dba7-7949-4517-8ddb-8925f7cb5654","order_by":2,"name":"Pranta Saha","email":"","orcid":"","institution":"University of California, Davis","correspondingAuthor":false,"prefix":"","firstName":"Pranta","middleName":"","lastName":"Saha","suffix":""},{"id":329945164,"identity":"227ee0b0-b201-4f0f-9a9c-5478edfc358d","order_by":3,"name":"Alex Rubin","email":"","orcid":"","institution":"University of California, Davis","correspondingAuthor":false,"prefix":"","firstName":"Alex","middleName":"","lastName":"Rubin","suffix":""},{"id":329945166,"identity":"f7b48879-303c-48c4-ab85-6c0d273f7e6d","order_by":4,"name":"Scott Dhuey","email":"","orcid":"","institution":"Lawrence Berkeley National Laboratory","correspondingAuthor":false,"prefix":"","firstName":"Scott","middleName":"","lastName":"Dhuey","suffix":""},{"id":329945169,"identity":"4d329001-dc01-417a-9c7f-ced36c5cd2c9","order_by":5,"name":"Marina Radulaski","email":"data:image/png;base64,iVBORw0KGgoAAAANSUhEUgAAAZAAAAAyAQMAAABI0h/eAAAABlBMVEX///8AAABVwtN+AAAACXBIWXMAAA7EAAAOxAGVKw4bAAAA7ElEQVRIiWNgGAWjYJACCYYCIMHMfICBgQ2MGBh4CGoxAGlhSyBVCwOPAVQ9AS26sw8/vM1jYGcv2c7zTeJHmV1iH/8Bxgdv23BrMTuXZmzNY5CcOJuZd5tkz7nkxDaJBGbDufi0nGEwk+YxYE6QA2qRZmxjNmaTYGCT5sWrhf0bUEu9vRwzzzOglnpjNv4D7L/xa+EB2XKYcTYzDxtQy2E5NoYENmYCWoot5xgcT5zZzGZs2XPuuBybRGKz5JxzeB228cabimp7ifOHH974UVbNI99/+OCHN2W4tWADjA2kqR8Fo2AUjIJRgAEAQyBCUc0T3jgAAAAASUVORK5CYII=","orcid":"","institution":"University of California, Davis","correspondingAuthor":true,"prefix":"","firstName":"Marina","middleName":"","lastName":"Radulaski","suffix":""}],"badges":[],"createdAt":"2024-06-11 23:53:23","currentVersionCode":1,"declarations":"","doi":"10.21203/rs.3.rs-4566528/v1","doiUrl":"https://doi.org/10.21203/rs.3.rs-4566528/v1","draftVersion":[],"editorialEvents":[],"editorialNote":"","failedWorkflow":false,"files":[{"id":60961129,"identity":"706a2411-9044-4a31-a37c-bffa23432722","added_by":"auto","created_at":"2024-07-24 04:58:10","extension":"pdf","order_by":1,"title":"","display":"","copyAsset":false,"role":"manuscript-pdf","size":3408077,"visible":true,"origin":"","legend":"","description":"","filename":"manuscript.pdf","url":"https://assets-eu.researchsquare.com/files/rs-4566528/v1_covered_bf3c8b58-843b-4c5e-bb58-5f8e1115f6f2.pdf"}],"financialInterests":"No competing interests reported.","formattedTitle":"Wafer-Scale Integration of Freestanding Photonic Deviceswith Color Centers in Silicon Carbide","fulltext":[],"fulltextSource":"","fullText":"","funders":[],"hasAdminPriorityOnWorkflow":false,"hasManuscriptDocX":false,"hasOptedInToPreprint":true,"hasPassedJournalQc":"","hasAnyPriority":false,"hideJournal":false,"highlight":"","institution":"","isAcceptedByJournal":true,"isAuthorSuppliedPdf":true,"isDeskRejected":"","isHiddenFromSearch":false,"isInQc":false,"isInWorkflow":false,"isPdf":true,"isPdfUpToDate":true,"isWithdrawnOrRetracted":false,"journal":{"display":true,"email":"[email protected]","identity":"npj-nanophotonics","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":false,"externalIdentity":"","sideBox":"Learn more about [npj Nanophotonics](https://www.nature.com/npjnanophoton/)","snPcode":"44310","submissionUrl":"https://submission.springernature.com/new-submission/44310/3","title":"npj Nanophotonics","twitterHandle":"","acdcEnabled":true,"dfaEnabled":true,"editorialSystem":"stoa","reportingPortfolio":"NPJ","inReviewEnabled":true,"inReviewRevisionsEnabled":true},"keywords":"","lastPublishedDoi":"10.21203/rs.3.rs-4566528/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-4566528/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"Color center platforms have been at the forefront of quantum nanophotonics forapplications in quantum networking, computing, and sensing. 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