Fully Stretchable Reconfigurable Organic Electrochemical Transistors for Wearable Adaptive Logic Bioelectronics

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Abstract Reconfigurable soft electronic devices that can alter their functionalities under mechanical deformation are essential for adaptive bioelectronics. Here, we report a scalable and ionically reconfigurable platform based on fully stretchable organic electrochemical transistors, enabling stable logic and synaptic operations within a single device architecture. The devices reversibly switch between these modes through electrolyte-mediated ionic reconfiguration. This platform leverages conducting polymer films optimized via a dual-doping strategy integrating a polar solvent and a nonionic surfactant, yielding mechanically stretchable and electrically stable devices that maintain performance under repeated deformation. Functional switching between digital logic and analog synaptic behavior is achieved by tuning the ionic environment of the gate electrolyte, allowing a single device to operate as both logic transistors for gates such as inverters, NAND, and NOR, and synaptic transistors supporting long-term memory. We integrate these reconfigurable devices into an adaptive logic bioelectronic platform capable of interpreting physiological signals and potentially enabling autonomous compression regulation.
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Fully Stretchable Reconfigurable Organic Electrochemical Transistors for Wearable Adaptive Logic Bioelectronics | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Article Fully Stretchable Reconfigurable Organic Electrochemical Transistors for Wearable Adaptive Logic Bioelectronics Hyunseok Shim, Heena Kim, Taeheon Kim, Yunsu Kim, Huijeong Lee This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-7305535/v1 This work is licensed under a CC BY 4.0 License Status: Posted Version 1 posted You are reading this latest preprint version Abstract Reconfigurable soft electronic devices that can alter their functionalities under mechanical deformation are essential for adaptive bioelectronics. Here, we report a scalable and ionically reconfigurable platform based on fully stretchable organic electrochemical transistors, enabling stable logic and synaptic operations within a single device architecture. The devices reversibly switch between these modes through electrolyte-mediated ionic reconfiguration. This platform leverages conducting polymer films optimized via a dual-doping strategy integrating a polar solvent and a nonionic surfactant, yielding mechanically stretchable and electrically stable devices that maintain performance under repeated deformation. Functional switching between digital logic and analog synaptic behavior is achieved by tuning the ionic environment of the gate electrolyte, allowing a single device to operate as both logic transistors for gates such as inverters, NAND, and NOR, and synaptic transistors supporting long-term memory. We integrate these reconfigurable devices into an adaptive logic bioelectronic platform capable of interpreting physiological signals and potentially enabling autonomous compression regulation. Physical sciences/Engineering/Biomedical engineering Physical sciences/Materials science/Soft materials/Organic molecules in materials science Physical sciences/Materials science/Materials for devices/Electronic devices Stretchable organic electrochemical transistors reconfigurable synaptic-mode logic-mode wearable adaptive logic bioelectronics Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Introduction The rapid proliferation of wearable and implantable technologies has intensified the demand for soft electronic systems that intimately conform to curvilinear, dynamically moving biological tissues 1 – 4 . These systems must combine mechanical stretchability with reliable performance in physiological envionments 5 , 6 . In this context, reconfigurable soft electronics, which are devices capable of switching between different functionalities, are emerging as a powerful paradigm for next-generation bioelectronic platforms 7 , 8 . Among these, systems capable of transitioning between digital logic and analog synaptic modes are particularly desirable, as they enable multifunctional operation within a single, stretchable device. Although various reconfigurable electronic systems have been reported 9 – 12 , their realization within a mechanically compliant, high-performance device architecture remains elusive. Stretchable organic electrochemical transistors (OECTs) have recently emerged as promising candidates for implementing such reconfigurable system. Their unique mechanism of volumetric ionic gating allows efficient signal transduction at low voltages in ion-rich, aqueous environments, while their intrinsic material softness ensures seamless integration with biological tissues 13 – 15 . However, despite these advantages, achieving true reconfigurability within a single OECT remains a significant challenge. Here, we present the first demonstration of a stretchable reconfigurable device based on OECT, enabling stable logic and synaptic operations within a single device architecture. This platform leverages conducting polymer films enhanced by a synergistic doping strategy using dimethyl sulfoxide (DMSO) and Triton™ X-100 to simultaneously improve electrical conductivity and mechanical stretchability. The resulting poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) composite maintains stable performance under 30% tensile strain and over 1,000 cycles of mechanical deformation, providing a robust material foundation for reliable OECT operation in dynamic environments. Building on this mechanical and electrical stability, we achieve reversible switching between digital logic and analog synaptic modes through electrolyte-mediated ionic reconfiguration by tuning the NaCl concentration in the gate electrolyte. Leveraging this functionality, we demonstrate logic gates, including inverter, NOR, and NAND, as well as synaptic transistors exhibiting long-term memory characteristics. Furthermore, we integrate these reconfigurable OECTs into adaptive logic bioelectronics capable of interpreting physiological cues such as swelling and temperature, thereby enabling closed-loop therapeutic feedback with edema-sensitive actuation. Collectively, this work establishes a scalable and reconfigurable framework for soft electronic systems that seamlessly integrate sensing, decision-making, and actuation within real-time biological environments. Results Figure 1 a illustrates the ionic reconfiguration of our fully stretchable OECT, where a single device can operate in either logic or synaptic mode depending solely on the NaCl concentration in the gate electrolyte. At high salt concentrations, the device exhibits low hysteresis, making it suitable for digital logic operations (i.e., logic-mode OECT) 16 , 17 . In contrast, at low salt concentrations, the device shows high hysteresis, which is essential for synaptic functions such as signal retention and short-to long-term memory transition (i.e., synaptic-mode OECT) 18 . This ionically tunable operation enables seamless switching between logic and synaptic modes without any change in device architecture. The underlying mechanism of this concentration-dependent behavior is governed by ion transport and electrochemical dynamics (Fig. 1 b). At high NaCl concentrations, a large ionic gradient and efficient ion injection into the PEDOT:PSS film promote rapid electrochemical reactions, enabling fast ionic equilibration and reversible switching 19 , 20 . In contrast, at low NaCl concentrations, the ions are heavily hydrated, which reduces their mobility and slows penetration into the film due to increased steric hindrance 21 , 22 . This diminished transport efficiency results in delayed and more gradual ionic equilibration. Notably, hydration and ionic equilibrium are closely interrelated and collectively define the electrochemical behavior of the device 23 . This interplay underlies the distinct operational modes and ensures stable performance even under mechanical deformation. Figure 1 c shows an optical image of the stretchable device array, where logic- and synaptic-mode OECTs are integrated on a soft PDMS substrate. The devices remain undamaged under 30% tensile strain, enabling robust dual-mode operation within a unified, deformable architecture. We systematically investigated the effects of dual-doping PEDOT:PSS with Triton™ X-100 and DMSO on its morphology, electrical conductivity, and mechanical stretchability. As shown in Fig. 2 a, the chemical structures of PEDOT + , PSS − , Triton™ X-100, and DMSO are presented to illustrate the molecular-level interactions between the dopants and the polymer matrix. The resulting morphological change of the PEDOT:PSS films upon sequential doping is schematically depicted in Fig. 2 b. In the pristine state (left), PEDOT:PSS exhibits a core-shell structure where the conductive PEDOT cores are tightly surrounded by insulating PSS shells due to strong Coulombic interactions. Such interactions limit both mechanical deformability and charge transport due to insufficient π-π stacking between PEDOT chains. Doping with Triton™ X-100 (middle), a nonionic surfactant, induces phase separation between PEDOT and PSS domains by weakening their electrostatic interaction 24 . This rearrangement increases the exposure of PEDOT regions, resulting in improved mechanical stretchability and electrical conductivity. Subsequent addition of DMSO (right), a polar solvent, further promotes the conformational ordering of PEDOT chains and enhances π-π stacking 25 , 26 . This facilitates the formation of a highly interconnected conductive network, which enables efficient charge transport and improves mechanical robustness through a soft, interconnected morphology. The morphological effects of these additives are investigated using atomic force microscopy (AFM), as shown in Fig. 2 b (inset). The pristine PEDOT:PSS film exhibits a relatively smooth surface, whereas the Triton™ X-100-doped film shows increased surface roughness, indicating microphase separation. The dual-doped film exhibits more defined nanostructures and increased roughness, suggesting a reorganized film morphology favorable for improved conduction. These structural changes are further supported by X-ray photoelectron spectroscopy (XPS) in Supplementary Fig. 1, which shows a reduced intensity of the PSS-related S 2p peak in the dual-doped film. This suggests a decreased PSS-to-PEDOT area ratio (2.82 → 1.90), calculated from the integrated S 2p peaks at ~ 169 eV (PSS) and ~ 164 eV (PEDOT), consistent with selective removal or redistribution of excess PSS by DMSO. Figure 2 c presents the ultraviolet–visible (UV-Vis) absorption spectra of the three film types. The pristine and Triton™ X-100-doped films exhibit nearly identical absorption profiles in visible to near-infrared range, indicating that Triton™ X-100 does not markedly alter the polaronic states or the electronic structure of PEDOT. In contrast, the dual-doped film shows an enhanced near-infrared absorption, consistent with increased polaron and bipolaron formation enabled by improved π-π stacking and extended conjugation induced by DMSO. These spectral changes support the role of DMSO in driving electronic reorganization within the PEDOT network 27 . The mechanical stretchability of the PEDOT:PSS composite film is evaluated in Fig. 2 d, where the dual-doped PEDOT:PSS film deposited on a PDMS substrate and subjected to 0% and 30% tensile strain. Both optical images and optical microscope (OM) images show that the film maintains its integrity and continuity under tensile strain, demonstrating mechanical robustness. Subsequently, the electrical conductivity of each formulation was evaluated to further assess the effect of doping. By doping the PEDOT:PSS with Triton™ X-100 and evaluating the initial resistance (R₀) and crack onset strain, Triton™ X-100 at a concentration of 5 wt% was identified as the optimal condition, exhibiting a significant reduction in resistance and enhanced mechanical stretchability (Fig. 2 e). Optical microscope images of PEDOT:PSS composite films doped with different Triton™ X-100 concentrations (0, 1, 3, 5, 7, 10 wt%) under increasing tensile strains are shown in Supplementary Fig. 2, revealing the crack onset strain for each formulation. Based on this optimized concentration, DMSO was subsequently introduced to further improve performance. Figure 2 f quantitatively compares the R₀ and crack onset strain as a function of DMSO content, revealing that DMSO at a concentration of 5 wt% achieves the best trade-off between mechanical robustness and electrical performance. Supplementary Fig. 3 presents OM images of PEDOT:PSS composite films doped with 5 wt% Triton™ X-100 and varying concentrations of DMSO (0, 3, 5, 7, and 10 wt%) under increasing tensile strain, showing the strain level at which cracks first appear for each formulation. Supplementary Fig. 4 presents the current voltage (I–V) characteristics of PEDOT:PSS composite films doped with various DMSO concentrations (0, 3, 5, 7, and 10 wt%) under tensile strains from 0–60%, highlighting their strain-dependent electrical behavior. Collectively, these results indicate that dual-doping the PEDOT:PSS composite with 5 wt% Triton™ X-100 and 5 wt% DMSO provides the optimal balance of electrical conductivity and mechanical stretchability. Figure 2 g presents the resistance–strain profiles of three PEDOT:PSS composite film formulations: pristine, Triton™ X-100-doped (5 wt%), and dual-doped (5 wt% Triton™ X-100 and 5 wt% DMSO). The pristine film shows a sharp increase in resistance beyond 10% tensile strain, indicative of mechanical failure. Incorporation of Triton™ X-100 extends the stretchability up to approximately 40%, while the additional doping with DMSO further enhances the electrical conductivity under tensile strains of up to 30%. This dual-doping strategy yields a synergistic enhancement in both stretchability and conductivity of the PEDOT:PSS composite film. Figure 2 h shows the I–V characteristics of the dual-doped PEDOT:PSS composite film under tensile strains of 0%, 10%, 20%, 30%, and after strain release (0%). The electrical response remains stable up to 30% tensile strain. As shown in Fig. 2 i, the normalized resistance (R/R₀) exhibits minimal variation over four successive stretching–releasing cycles, indicating high electrical reversibility and negligible hysteresis. These results suggest that the PEDOT:PSS composite film possesses excellent structural resilience and maintains reversible conductivity under cyclic tensile strain. The I–V characteristics of the film over four stretching cycles are presented in Supplementary Fig. 5. The long-term cycling performance of the PEDOT:PSS composite film is shown in Fig. 2 j. The ∆R/R₀ remains nearly constant over 1,000 cycles at 30% tensile strain, confirming excellent mechanical durability and electrical stability under dynamic operational conditions. The I–V characteristics of the PEDOT:PSS composite film measured after 1, 10, 100, and 1000 mechanical cycles under 30% tensile strain are presented in Supplementary Fig. 6. Collectively, these findings validate that the PEDOT:PSS composite film yields a highly conductive, stretchable, and mechanically durable material platform. This composite is ideally suited for soft bioelectronic systems demanding mechanical stretchability and long-term reliability. Due to their excellent mechanical and electrical properties, PEDOT:PSS composite films were employed in OECTs to validate their applicability in bioelectronic systems. Figure 3 a presents a schematic exploded view of the stretchable OECT fabricated on PDMS substrates. The PEDOT:PSS composite was patterned by spin-coating the solution through a shadow mask onto a glass substrate, followed by thermal annealing and subsequent transfer onto PDMS, ensuring both electrical conductivity and mechanical stretchability. A corresponding cross-sectional illustration highlights the device architecture, which includes a PDMS substrate, PEDOT:PSS composite film, PDMS well, and an aqueous NaCl electrolyte, used as the gate medium to enable ion-permeable volumetric gating. The fabrication process of the stretchable OECT is detailed in Supplementary Fig. 7. Supplementary Fig. 8 schematically illustrates the electrochemical switching mechanism of PEDOT:PSS under different gate biases in OECTs. The bottom panel shows the molecular interaction between PEDOT and PSS chains, while the top diagrams represent the ionic and electronic transport pathways and corresponding structural changes within the film during doping and dedoping processes. Under a positive gave voltage, cation (e.g., Na + ) are injected form the electrolyte into the PEDOT:PSS channel. These cations compensate the negatively charged PSS − and neutralize the positively charged PEDOT chains (polarons), leading to dedoping of PEDOT. As a result, the hole (h + ) concentration decreases, the π-conjugation pathway is disrupted, and the film becomes less conductive. This dedoped state corresponds to the “OFF” state of the transistor. Conversely, when a negative gate voltage is applied, cations are expelled from the film back into the electrolyte. The PEDOT chains are reoxidized, restoring the hole concentration and thus the doped, conductive state. This reestablishes the π- π stacking interactions and enhances the overall conductivity of the film, corresponding to the “ON” state of the device. The fabricated devices exhibited strong mechanical robustness under various deformation modes, including uniaxial stretching and localized poking (Fig. 3 b). No macroscopically visible damage was observed, confirming the structural integrity and suitability of the devices for wearable and conformable applications. As shown in the transfer curves (Fig. 3 c), OECTs incorporating optimally processed PEDOT:PSS composite films demonstrated the highest I ON / I OFF and transconductance (g m ), indicating optimal electrical performance. This trend is consistent with the improved film properties discussed in Fig. 2 . The effect of DMSO doping concentration on device performance is shown in Supplementary Fig. 9. To further investigate thickness-dependent behavior, PEDOT:PSS composite solutions were spin-coated at varying speeds, and the resulting I ON / I OFF and threshold voltage ( V th ) values were characterized (Fig. 3 d). Film thicknesses of approximately 430, 340, 270, and 180 nm were obtained as the spin coating speed increased to 300, 500, 1000, and 1500 rpm, respectively. Spin-coating at 1000 rpm provided the best performance, reflecting a favorable balance between film thickness and charge transport characteristics (Supplementary Fig. 10). Based on this optimized condition, Fig. 3 e presents the transfer characteristics of devices with varying channel lengths (1–5 mm). Devices with shorter channels exhibited steeper switching curves and higher currents, while longer channels showed broader transitions, likely due to delayed ionic equilibration 28 , 29 . A channel length of 1 mm yielded optimal performance, characterized by sharp switching and the highest output current. To assess mechanical durability, transfer characteristics of optimized device were measured under uniaxial tensile strains of 0%, 10%, 20%, 30%, and after strain release (0%), applied along the channel length direction (Fig. 3 f). In all cases, the electrical performance remained stable with minimal degradation. Quantitative analysis of I ON , I OFF , and g m of the device confirmed robust device operation under tensile strain (Fig. 3 g). Notably, the electrical properties recovered after releasing the tensile strain, demonstrating excellent elastic recovery of the channel and interface 30 , 31 . A similar trend was observed under tensile strains applied perpendicular to the channel length direction (Supplementary Fig. 11). Figure 3 h shows that the I ON / I OFF of the device was maintained between 10² and 10³ over 1,000 stretching cycles at 30% tensile strain, confirming long-term stretchability and durability. The transfer characteristics of the devices measured at representative cycles (1, 10, 100, and 1,000) further verify their stable switching behavior. Additionally, both I ON and I OFF remained consistent over 1000 s, indicating excellent electrical stability essential for reliable device operation (Supplementary Fig. 12). To validate the reconfigurable capability of the device, we evaluated its response under different NaCl concentrations. As illustrated schematically in Fig. 3 i, the device operates in synaptic mode at a lower concentration and transitions to logic mode at a higher concentration. Consistent with this behavior, Fig. 3 j shows that a lower concentration (10⁻³ M) induces large hysteresis, whereas a higher concentration (1 M) suppresses hysteresis and improves the switching characteristic 32 . This trend is attributed to faster ionic equilibration, which accelerates charge screening, and improved ionic mobility at higher salt concentrations due to altered hydration dynamics; these effects collectively reduce transient charge trapping and stabilize the gating response 23 , 33 . The corresponding hysteresis window, defined as the maximum difference in threshold voltage between the forward and reverse gate sweeps, was found to decrease with increasing NaCl concentration, indicating that the operational characteristics of the device can be effectively tuned by modulating the ionic concentration of the electrolyte (inset of Fig. 3 j). Such hysteresis directly influenced the temporal characteristics of the device’s output current, as depicted in Fig. 3 k. Devices gated with low-concentration electrolytes exhibited prolonged retention times, mimicking the transition from short-term to long-term synaptic plasticity 17 , 34 , while high-concentration gating enabled rapid signal decay, which is a desirable characteristic for logic operation 35 . We compared the performance of synaptic-mode OECTs with and without DMSO doping under 0.01 M NaCl electrolyte conditions. As illustrated in Fig. 3 l,m, single pulse-induced excitatory postsynaptic current (EPSC) was measured and energy consumption was calculated under undoped and DMSO-doped conditions. The DMSO-doped devices exhibited comparable synaptic current peaks at a lower V DS than the undoped devices when presynaptic pulses (-2 to 3 V) were applied at frequencies of 0.5, 1, 3, and 5 Hz 36 . Figure 3 n shows the energy consumption reduction (%) calculated as the ratio of the energy consumption of OECTs under undoped and DMSO-doped conditions at 0.5, 1, 3, and 5 Hz, which shows that DMSO doping significantly lowers energy consumption across all tested frequencies. To assess the reversibility of electrolyte-induced switching, the device was sequentially exposed to NaCl solutions of varying concentrations (0.01 M → 1 M → 0.01 M), with DI water rinsing between each step (Supplementary Fig. 13). The transfer curves exhibited a large hysteresis window at 0.01 M NaCl, while minimal hysteresis was observed at 1 M. When the device was returned to 0.01 M, both the hysteresis window and threshold voltage closely matched those in the initial measurement, indicating that the switching behavior is reliably reversible with changes in ionic concentration. The device’s ability to recover its initial electrical characteristics after sequential exposure to different NaCl concentrations demonstrates its operational robustness. Even after significant ionic concentration variation, the device consistently reverted to its original behavior once the initial electrolyte condition was restored. This result suggests that the device performance is not permanently altered by electrolyte exchange and that the gating mechanism is dominated by reversible ionic interactions. The consistent hysteresis window and threshold voltage before and after cycling support the reliable reusability of the device under varying electrolyte environments. To explore the application potential of our device, we fabricated fully stretchable logic gates, including inverter, NAND, and NOR circuits, using the same procedures described for the OECTs in Fig. 3 , with the exception of the electrode geometry, which was adjusted according to each circuit configuration (Fig. 4 a). A 1 M NaCl electrolyte, previously identified in Fig. 3 as optimal for logic operation, was employed as the gate dielectric in all logic circuits. Accordingly, all transistors in these circuits were implemented using logic-mode OECTs. Each circuit followed a conventional logic configuration 37 – 39 , as schematically depicted in Fig. 4 b. The fully stretchable inverter adopts a zero-V GS load-type configuration, utilizing two stretchable logic-mode OECTs with different channel widths, specifically designed with a channel width ratio of 1:4 between the driver and load transistors, and identical channel lengths. In the circuit configuration of the fully stretchable NAND gate, two driver transistors (T D,A and T D,B ) were connected in parallel, and their outputs were fed into a common load transistor (T L ). For the fully stretchable NOR gate, the two driver transistors were connected in series and then connected in series to the load transistor. Figure 4 c presents optical images captured before and after 30% tensile stretching, confirming the stretchability of the inverter. Its voltage transfer characteristics (VTCs) were measured by sweeping the input voltage ( V IN ) from − 2 to 2 V under V DD = 1 V, while recording the output voltage ( V OUT ), as shown in Fig. 4 d. The resulting VTCs exhibit typical inverter behavior, with distinct output levels corresponding to logic input states of 0 and 1, indicating stable OECT switching under electrochemical gating 40 . Despite the applied tensile strain, the inverter retained functional operation. Supplementary Fig. 14 shows the VTCs of the inverters as a function of the channel width ratio between the load and drive transistors (W L/D ), highlighting how this geometric ratio influences the switching behavior. In addition, the dynamic response of the inverter to a voltage pulse (-1 to 1 V) with a frequency 0.1 Hz demonstrated reliable and repeatable switching between logic levels without noticeable signal degradation over time (Fig. 4 e). Optical images of the fully stretchable NAND gate before and after 30% tensile stretching are shown in Fig. 4 f. The device exhibited no physical damage or optically visible cracks under 30% tensile strain. Figures 4 g,h summarize the resulting V OUT values for each input logic state combination ((0,0), (0,1), (1,0), and (1,1)) without and with 30% tensile strain, respectively. The device generated a low output voltage (logic 0) only when both inputs were at the logic state (1,1), confirming correct NAND functionality. Figure 4 i shows optical images of a fully stretchable NOR gate before and after 30% tensile strain. No visible tearing or cracking was observed, similar to the inverter and NAND gates, confirming its robust mechanical stability. The device generated a high output voltage (logic 1) only when both inputs were at the logic state (0,0), as shown in Fig. 4 j, demonstrating correct NOR gate operation. The device operated normally under a 30% tensile strain, demonstrating the mechanical reliability of the circuits (Fig. 4 k). Supplementary Fig. 15 presents the static VTCs of both NAND and NOR logic gates, demonstrating that the fully stretchable logic circuits maintain proper Boolean functionality even under mechanical stretching. We further demonstrated a wearable adaptive logic system responsive to inflammatory edema that integrates both logic-mode and synaptic-mode OECTs, illustrating the applicability of fully stretchable OECTs in real-life biomedical devices (Fig. 5 a). The system is based on a NOR logic architecture in which two physiological signals, tissue temperature and swelling, serve as logic inputs. Under normothermic conditions without swelling (state (1,1)), the system outputs logic 0, during which the compression band remains engaged to provide a constant baseline pressure for tissue support. Prior to the critical state (state (0,0)), intermediate input combinations (states (1,0) and (0,1)) may occur, representing isolated hyperthermia or swelling, respectively. In both cases, the output remains low and compression is sustained, as neither condition alone warrants therapeutic intervention. When both inputs drop to low (state (0,0)), indicative of inflammatory edema characterized by elevated temperature and increased mechanical stress, the NOR gate outputs logic 1, triggering partial decompression to alleviate tissue stress and prevent damage. Unlike conventional logic systems (Fig. 5 a, upper right), our design incorporates a synaptic-mode OECT that memorizes and retains input signals associated with tissue swelling (Fig. 5 a, lower right). In the post-critical state (state (1,0)), where swelling has partially resolved but elevated temperature persists, this memory effect delays recompression, provides sufficient relaxation time, and helps prevent tissue necrosis, which may result from the immediate reapplication of pressure 41 , 42 . It is also noted that in the state (0,1), where swelling persists but the temperature has normalized, the risk of tissue necrosis remains low even with immediate recompression 43 . A schematic of the adaptive logic system is shown in Fig. 5 b. The system integrates a synaptic-mode OECT (using 0.01 M NaCl as the electrolyte), a NOR gate composed of logic-mode OECTs (1 M NaCl), and pressure and temperature sensors. The schematic fabrication process of the adaptive logic system is illustrated in Supplementary Fig. 16. As depicted in Fig. 5 c, the circuit comprises a synaptic-mode transistor (T S ) that functions as a physiological signal memorizer and interfaces with the NOR gate, which includes a load transistor (T L ) and two drive transistors (T D,A and T D,B ). The T S captures the swelling-induced signal and modulates the gate of T D,A , thereby enabling sustained output ( V OUT ). Figure 5 d demonstrates the mechanical robustness of the system, showing optical images under twisting, crumpling, and wearable conditions, confirming reliable performance under practical deformation scenarios. Figure 5 e presents the voltage responses over time in relation to mechanical stress and temperature, as monitored by the pressure and temperature sensors, simulating swelling and thermal stimuli. These results identify the specific input conditions necessary to induce output activation. A balloon was used as a tissue phantom to mimic swelling-induced mechanical deformation. To simulate the mechanical stress induced by swelling, the device was laminated onto the balloon surface, which was incrementally inflated to replicate tissue expansion. The resulting stress on the device was estimated using the thin-wall pressure vessel approximation derived from Laplace’s law 44 , 45 . This classical relation describes the circumferential stress developed in thin-wall spherical or cylindrical membranes under internal pressure, assuming uniform pressure distribution and a wall thickness much smaller than the radius. The circumferential stress σ was calculated as: $$\:\sigma\:=\:\frac{P\:\bullet\:r}{2t}$$ where P is the internal pressure, r is the inflated radius, and t is the wall thickness. The calculated mechanical stress was used as a representative metric for the mechanical load applied to the stretchable device under simulated swelling conditions. Supplementary Fig. 17 illustrates the schematic fabrication process of the stretchable pressure sensor, and the corresponding voltage responses as a function of mechanical stress is shown in Supplementary Fig. 18a. Supplementary Fig. 18b shows the OM image of AgNWs coated on nylon, confirming their contribution to electrical conductivity. The voltage response of the temperature sensor as a function of temperature is presented in Supplementary Fig. 19. Optical images of the system under initial (36°C, no swelling) and inflammatory edema (≥ 40°C, ≥ 64.5MPa) states are shown in Fig. 5 f, confirming device functionality under simulated inflammatory edema conditions. Balloon expansion mimicked swelling, while localized hyperthermia was induced via Joule heating from the stretchable heater. At 3.5 V, the heater generated temperatures exceeding 40°C (Supplementary Fig. 20). The schematic fabrication process of the stretchable heater and assembly of the heater-balloon system for edema simulation are presented in Supplementary Fig. 21. The system maintained continuous contact and actively responded to such conditions. The dynamic behavior of the adaptive logic system is summarized in Fig. 5 g. In the hyperthermic (state (1,0)) or swelling (state (0,1)), the system outputs logic 0 and maintains compression, similar to the normal state. Upon transitioning to inflammatory edema (state (0,0)), the system outputs logic 1, triggering compression bandage release to prevent ischemic damage. As recovery progresses from state (0,0) to state (1,0), where swelling subsides but elevated temperature persists, the synaptic-mode OECT retains the decompressed state. This memory function enables gradual recompression rather than abrupt pressure reapplication, thereby minimizing the risk of tissue necrosis. The long-term memory characteristics of our synaptic-mode OECT are demonstrated in Supplementary Fig. 22. This delayed response is visualized through the connection of the system’s time-dependent output voltage to an LED (Supplementary Fig. 23). In contrast to conventional systems that reapply compression too quickly, our adaptive logic platform supports condition-dependent, progressive recompression, offering a closed-loop, logic-controlled therapeutic solution for safe and effective edema management. Discussion In this study, we present a high-performance, fully stretchable OECT platform with reconfigurable functionality, enabling transition between logic- and synaptic-mode operation within a single device architecture. By introducing a dual-doping strategy using Triton™ X-100 and DMSO, we significantly enhanced the electrical conductivity and mechanical stretchability of PEDOT:PSS films. These PEDOT:PSS composites enabled robust OECT performance under 30% tensile strain and maintained stable characteristics over 1,000 mechanical cycles, confirming their suitability for use in deformable bioelectronic systems. The operational mode of the OECTs was dynamically reconfigured by tuning the NaCl concentration in the gate electrolyte, allowing the same device to function either as a digital logic switch or a synaptic transistor with analog memory behavior. Leveraging this ionic tunability, we successfully implemented fundamental logic gate circuits, including inverter, NAND, and NOR, which exhibited reliable operation even under substantial mechanical deformation. Beyond logic circuits, we further developed a wearable adaptive logic bioelectronic that combines logic-mode and synaptic-mode OECTs to enable real-time therapeutic feedback in response to physiological stimuli. This system autonomously interprets combinations of swelling and temperature as logic inputs and adjusts compression accordingly. Importantly, the integration of synaptic-mode OECTs allows for temporary signal retention, which enables delayed recompression after partial symptom recovery. This function mitigates the risk of ischemic or pressure-induced injuries, offering a closed-loop and condition-aware therapeutic mechanism. The system demonstrated robust performance on a curvilinear surface, reliably responding to simulated inflammatory edema conditions, thereby validating its potential for next-generation wearable healthcare devices. Overall, our work establishes a scalable materials and device platform for reconfigurable, stretchable bioelectronics capable of real-time sensing, logic processing, and actuation. This approach not only provides foundational insight into multifunctional soft transistors but also paves the way for their integration into intelligent therapeutic systems, adaptive wearables, and bio-interfaced soft robotics. Methods Materials DMSO, Triton™ X-100, sodium chloride (NaCl, ≥ 99.5%), and (3-aminopropyl)triethoxysilane (APTES, 99%) were obtained from Sigma-Aldrich and used as received. PEDOT:PSS (Clevios™ PH1000, Heraeus) was purchased from Ossila Limited and used as the primary conducting polymer, while polydimethylsiloxane (PDMS, Sylgard™ 184) was acquired from Dow Corning Corporation. Preparation of elastomeric substrate PDMS substrates were prepared by blending the base prepolymer and curing agent at a 10:1 weight ratio, followed by spin-coating the mixture onto glass substrates at 300 rpm for 30 seconds. The coated films were subsequently thermally cured in an oven at 90°C for 2 hours. To render the surface hydrophilic, the cured PDMS films were exposed to UV–ozone treatment for 20 minutes and then immersed in a 3 wt% APTES solution in deionized water for an additional 20 minutes. Preparation of stretchable PEDOT:PSS composite film An aqueous PEDOT:PSS solution containing 5 wt% DMSO and 5 wt% Triton™ X-100 was stirred at room temperature for 12 hours. The resulting composite film was fabricated by spin-coating the mixed solution onto a pre-cleaned glass substrate, followed by annealing at 100°C for 10 minutes. A surface-modified PDMS substrate was laminated onto the patterned PEDOT:PSS film and then peeled off to complete the transfer process. The transferred film was subsequently annealed on a hot plate at 140°C for 10 minutes to enhance its electrical conductivity and interfacial adhesion. Fabrication of fully stretchable OECTs, inverter, NAND, and NOR gates The fabrication process of fully stretchable OECTs involved three key steps: preparation of the stretchable substrate, patterning of the PEDOT:PSS composite-based channel, and formation of the ion-permeable NaCl-based gate electrolyte. To prevent electrolyte leakage during mechanical deformation, a PDMS well was integrated into the device architecture. NaCl electrolytes with concentrations ranging from 10⁻³ M to 1 M were prepared by dissolving NaCl in deionized water. For synaptic-mode OECTs, a low-concentration solution (0.01 M) was used to induce ionic hysteresis, whereas a high-concentration solution (1 M) was employed in logic-mode OECTs and their integrated circuits to enable sharp switching behavior. Fabrication of stretchable pressure sensor To fabricate the pressure sensor, a square piece of nylon fabric (1 mm × 1 mm; polyamide fiber, commonly used in commercial stockings) was prepared and placed onto a clean glass substrate. A silver nanowire (AgNW) solution was then drop-cast onto the fabric surface and allowed to spread uniformly. The sample was subsequently annealed at 200°C for 30 minutes in ambient air to enhance nanowire interconnection and adhesion to the nylon substrate. Separately, a PEDOT:PSS composite film was prepared and used as the bottom electrode. The silver nanowire-coated nylon fabric was then aligned and fixed onto the PEDOT:PSS electrode using a thin PDMS encapsulant, completing the pressure sensor assembly and ensuring reliable mechanical coupling and signal transduction between the layers. Fabrication of wearable adaptive logic system responsive to inflammatory edema An adaptive logic system was implemented by integrating a NAND gate based on a logic-mode OECT, a synaptic-mode OECT, a pressure sensor, and a temperature sensor into a soft, wearable platform. The system was designed to release pressure only when both swelling (detected via pressure) and elevated temperature were simultaneously present, consistent with NAND logic behavior. The fabrication process followed the OECT fabrication procedures described above, with the addition of the pressure and temperature sensors. The pressure sensor was fabricated using the same method as previously described. The temperature sensor was commercially sourced and attached to the device using rubber paste. Notably, the rubber paste and temperature sensor exhibited strong interfacial adhesion, with no delamination observed under 30% tensile strain. Materials characterization and device measurements The electrical performance of the transistor and its synaptic functions was characterized using a semiconductor parameter analyzer (4200-SCS, Keithley Instruments Inc.) under ambient conditions (relative humidity ~ 50%, unless otherwise noted). Presynaptic pulses for synaptic function evaluation were generated using a waveform generator (DG4062, RIGOL Technologies Inc.). A power supply (2230-30-3, Keithley Instruments Inc.) and function generator were used for both static and dynamic characterizations of the inverter, NAND, and NOR logic gates. The mechanical performance of the device was assessed using a custom-built uniaxial stretcher. AFM (Park NX-100, Park Systems Corp.) images were taken to visualize the morphologies and structures of the PEDOT:PSS composite films. XPS (Ulvac-PHI, PHI GENESIS) was performed to examine the surface composition and PEDOT-to-PSS ratio changes in pristine, Triton™ X-100-doped and dual-doped PEDOT:PSS films. Absorption spectra data in the visible region were obtained by UV-Vis spectrophotometer (V-770, JASCO Co.). Declarations Competing interests The authors declare no competing financial interests. Materials & Correspondence Correspondence and requests for materials should be addressed to H.S. Author contribution H.K, T.K., and H.S. conceived and designed the experiment. H.K., T.K., H.L., and Y.K. performed the experiments. H.K., and T.K. characterized device performance. H.K., T.K., and H.S. analyzed the data. H.K., and H.S. wrote the paper. All the authors revised the manuscript. Acknowledgments This research has been supported by the POSCO Science Fellowship of POSCO TJ Park Foundation and Korea Institute for Advancement of Technology(KIAT) grant funded by the Korea Government(MOTIE) (RS-2025-02214408, HRD Program for Industrial Innovation) Data availability All data needed to evaluate the conclusions in the paper are presented in the paper and/or the Supplementary Information. The data that support the findings of this study or additional data related to this paper are available from the authors upon request. References Lim HR et al (2020) Advanced soft materials, sensor integrations, and applications of wearable flexible hybrid electronics in healthcare, energy, and environment. Adv Mater 32:1901924 Gao W, Ota H, Kiriya D, Takei K, Javey A (2019) Flexible electronics toward wearable sensing. Acc Chem Res 52:523–533 Kang J, Tok JB-H, Bao Z (2019) Self-healing soft electronics. Nat Electron 2:144–150 Liu Y et al (2019) Soft and elastic hydrogel-based microelectronics for localized low-voltage neuromodulation. Nat Biomed Eng 3:58–68 Lee Y et al (2021) Standalone real-time health monitoring patch based on a stretchable organic optoelectronic system. Sci Adv 7:eabg9180 Yao Y et al (2023) Flexible and stretchable organic electrochemical transistors for physiological sensing devices. Adv Mater 35:2209906 Shim H et al (2022) An elastic and reconfigurable synaptic transistor based on a stretchable bilayer semiconductor. Nat Electron 5:660–671 Jang J et al (2025) Reconfigurable assembly of self-healing stretchable transistors and circuits for integrated systems. Nat Electron 8:474–484 Bluvstein D et al (2024) Logical quantum processor based on reconfigurable atom arrays. Nature 626:58–65 Lee J, Lu WD (2018) On-Demand Reconfiguration of Nanomaterials: When Electronics Meets Ionics. 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Adv Sci 11:2404182 Shin S et al (2022) Emulating the short-term plasticity of a biological synapse with a ruthenium complex-based organic mixed ionic–electronic conductor. Mater Adv 3:2827–2837 Bernards DA, Malliaras GG (2007) Steady-State and Transient Behavior of Organic Electrochemical Transistors. Adv Funct Mater 17:3538–3544 Paudel PR, Skowrons M, Dahal D, Krishnan R, R.K., Lüssem B (2022) The transient response of organic electrochemical transistors. Adv Theor Simul 5:2100563 Savva A et al (2019) Influence of Water on the Performance of Organic Electrochemical Transistors. Chem Mater 31:927–937 Savva A et al (2020) Balancing Ionic and Electronic Conduction for High-Performance Organic Electrochemical Transistors. Adv Funct Mater 30:1907657 Stavrinidou E et al (2013) Direct Measurement of Ion Mobility in a Conducting Polymer. Adv Mater 25:4488–4493 Yoon S-S, Khang D-Y (2016) Roles of nonionic surfactant additives in PEDOT: PSS thin films. 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Chem Soc Rev 53:10575–10603 Oh JY et al (2014) Effect of PEDOT Nanofibril Networks on the Conductivity, Flexibility, and Coatability of PEDOT:PSS Films. ACS Appl Mater Interfaces 6:6954–6961 Zhao C, Yang J, Ma W (2024) Transient response and ionic dynamics in organic electrochemical transistors. Nano Micro Lett 16:233 Wu R et al (2024) Direct quantification of ion composition and mobility in organic mixed ionic-electronic conductors. Sci Adv 10:eadn8628 Harikesh PC et al (2022) Organic electrochemical neurons and synapses with ion mediated spiking. Nat Commun 13:901 Majak D, Fan J, Gupta M (2019) Fully 3D printed OECT based logic gate for detection of cation type and concentration. Sens Actuators B 286:111–118 Liang Y et al (2025) Bioinspired Electrolyte-Gated Organic Synaptic Transistors: From Fundamental Requirements to Applications. Nano Micro Lett 17:198 Leydecker T, Wang ZM, Torricelli F, Orgiu E (2020) Organic-based inverters: basic concepts, materials, novel architectures and applications. Chem Soc Rev 49:7627–7670 Park H et al (2024) Organic flexible electronics with closed-loop recycling for sustainable wearable technology. Nat Electron 7:39–50 Sim K et al (2019) Fully rubbery integrated electronics from high effective mobility intrinsically stretchable semiconductors. Sci Adv 5:eaav5749 Romele P, Ghittorelli M, Kovács-Vajna ZM, Torricelli F (2019) Ion buffering and interface charge enable high performance electronics with organic electrochemical transistors. Nat Commun 10:3044 Dissemond J, Protz K, Stücker M (2023) Compression therapy in dermatology. J Dtsch Dermatol Ges 21:1003–1019 Rabe E et al (2020) Risks and contraindications of medical compression treatment - A critical reappraisal. An international consensus statement. Phlebology 35:447–460 Haesler E (2016) Evidence summary: managing lymphoedema: compression therapy. Wound Pract Res 24:233–236 Klinker L et al (2015) Balloon catheters with integrated stretchable electronics for electrical stimulation, ablation and blood flow monitoring. Extreme Mech Lett 3:45–54 Cánovas R, Parrilla M, Mercier P, Andrade FJ, Wang J (2016) Balloon-Embedded Sensors Withstanding Extreme Multiaxial Stretching and Global Bending Mechanical Stress: Towards Environmental and Security Monitoring. Adv Mater Technol 1:1600061 Additional Declarations There is NO Competing Interest. Supplementary Files SIv8HNHSfinal.docx Supplementary Information Cite Share Download PDF Status: Posted Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. 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Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-7305535","acceptedTermsAndConditions":true,"allowDirectSubmit":true,"archivedVersions":[],"articleType":"Article","associatedPublications":[],"authors":[{"id":502553817,"identity":"75261205-e7c0-4434-9ade-e9279792ddbf","order_by":0,"name":"Hyunseok Shim","email":"data:image/png;base64,iVBORw0KGgoAAAANSUhEUgAAAZAAAAAyAQMAAABI0h/eAAAABlBMVEX///8AAABVwtN+AAAACXBIWXMAAA7EAAAOxAGVKw4bAAAAw0lEQVRIiWNgGAWjYBACAwYehgMMFcgCxGk5Q6oWBsY2UrSY8589eOjmvDuJ89vPHmD4UcNgbN5AQIvljLyEw7nbniVuOJOXwNhzjMFM5gAhh93gMQBqOZy4gSHHgIG3gcFGgpDDDM6fAWqZczhxfv8bA8a/RGk5kAPU0nA4seFGjgEz0BYzwlqAKg/nHHtmvOHGG4PDMsckjIlxmPHnnJo7svP7cwwfvqmxMZxBSAsUHICRBO1A0zIKRsEoGAWjACsAALMhRLvAmvLkAAAAAElFTkSuQmCC","orcid":"","institution":"Pusan National University","correspondingAuthor":true,"prefix":"","firstName":"Hyunseok","middleName":"","lastName":"Shim","suffix":""},{"id":502553818,"identity":"b7c4b48e-3c88-406c-adf7-35bbe3d9037a","order_by":1,"name":"Heena Kim","email":"","orcid":"","institution":"Pusan National University","correspondingAuthor":false,"prefix":"","firstName":"Heena","middleName":"","lastName":"Kim","suffix":""},{"id":502553819,"identity":"eb29a3b4-d787-4e72-b0c3-3ce895e370b1","order_by":2,"name":"Taeheon Kim","email":"","orcid":"","institution":"Pusan National University","correspondingAuthor":false,"prefix":"","firstName":"Taeheon","middleName":"","lastName":"Kim","suffix":""},{"id":502553820,"identity":"28aeed80-8a32-499d-9491-9524bcc0b976","order_by":3,"name":"Yunsu Kim","email":"","orcid":"","institution":"Pusan National University","correspondingAuthor":false,"prefix":"","firstName":"Yunsu","middleName":"","lastName":"Kim","suffix":""},{"id":502553821,"identity":"906292cd-c7a5-4db7-bd85-d4bb6ed991d1","order_by":4,"name":"Huijeong Lee","email":"","orcid":"","institution":"Pusan National University","correspondingAuthor":false,"prefix":"","firstName":"Huijeong","middleName":"","lastName":"Lee","suffix":""}],"badges":[],"createdAt":"2025-08-06 04:25:17","currentVersionCode":1,"declarations":"","doi":"10.21203/rs.3.rs-7305535/v1","doiUrl":"https://doi.org/10.21203/rs.3.rs-7305535/v1","draftVersion":[],"editorialEvents":[],"editorialNote":"","failedWorkflow":false,"files":[{"id":89508923,"identity":"2814b77e-1754-402e-9b08-5faa46d76e2c","added_by":"auto","created_at":"2025-08-20 17:53:27","extension":"jpg","order_by":1,"title":"Figure 1","display":"","copyAsset":false,"role":"figure","size":2298031,"visible":true,"origin":"","legend":"\u003cp\u003e\u003cstrong\u003eReconfigurable operation of fully stretchable OECTs. a,\u003c/strong\u003e Schematic illustration of ionic reconfiguration between logic- and synaptic-modes in a single stretchable OECT. \u003cstrong\u003eb,\u003c/strong\u003e Schematic illustration of NaCl concentration-dependent ion transport and electrochemical dynamics in stretchable OECTs. \u003cstrong\u003ec,\u003c/strong\u003e Optical image of a stretchable device array composed of logic gates based on logic-mode OECTs and synaptic-mode OECTs under tensile strain.\u003c/p\u003e","description":"","filename":"image1.jpg","url":"https://assets-eu.researchsquare.com/files/rs-7305535/v1/d07dc0c175ecd250fb17d5b3.jpg"},{"id":89509435,"identity":"421b3e0a-7381-4443-b7d4-da20545f9617","added_by":"auto","created_at":"2025-08-20 18:01:27","extension":"jpg","order_by":2,"title":"Figure 2","display":"","copyAsset":false,"role":"figure","size":544098,"visible":true,"origin":"","legend":"\u003cp\u003e\u003cstrong\u003eCharacterization of dual-doped PEDOT:PSS composite films. a, \u003c/strong\u003eChemical structures of PEDOT⁺, PSS⁻\u003ca href=\"#_msocom_1\"\u003e[HS1]\u003c/a\u003e\u0026nbsp;\u003ca href=\"#_msocom_2\"\u003e[희김2]\u003c/a\u003e\u0026nbsp;, Triton\u003csup\u003eTM\u003c/sup\u003e X-100, and DMSO used in the composite formulation.\u003cstrong\u003e b, \u003c/strong\u003eSchematic illustration of structural changes in PEDOT:PSS upon addition of Triton\u003csup\u003eTM\u003c/sup\u003e X-100 (phase separation) and DMSO (enhanced π–π stacking), compared to the pristine core–shell structure, with the inset showing AFM images of pristine, Triton\u003csup\u003eTM\u003c/sup\u003e X-100-doped, and dual-doped PEDOT:PSS films (scale bar: 500 nm). \u003cstrong\u003ec, \u003c/strong\u003eUV–Vis spectra of pristine, Triton\u003csup\u003eTM\u003c/sup\u003e X-100-doped, and dual-doped PEDOT:PSS films. \u003cstrong\u003ed, \u003c/strong\u003eSchematic illustration, optical and OM images of PEDOT:PSS composite films on PDMS before and after 30% tensile stretching.\u003cstrong\u003e e,\u003c/strong\u003e R₀ and crack onset strain as a function of Triton™ X-100 concentration. \u003cstrong\u003ef,\u003c/strong\u003e Effect of DMSO concentration on R₀ and crack onset strain in PEDOT:PSS composite films doped with 5 wt% Triton\u003csup\u003eTM\u003c/sup\u003e X-100. \u003cstrong\u003eg,\u003c/strong\u003e Resistance–strain profiles of three PEDOT:PSS composite film formulations: pristine, Triton\u003csup\u003eTM\u003c/sup\u003e X-100-doped (5 wt%), and dual-doped (5 wt% Triton\u003csup\u003eTM\u003c/sup\u003e X-100 and 5 wt% DMSO) PEDOT:PSS films. \u003cstrong\u003eh,\u003c/strong\u003e I–V characteristics of the dual-doped PEDOT:PSS composite film under tensile strains of 0%, 10%, 20%, 30%, and after strain release (0%). \u003cstrong\u003ei,\u003c/strong\u003e Normalized resistance (R/R₀) of the dual-doped PEDOT:PSS composite film over four successive stretching–releasing cycles. \u003cstrong\u003ej,\u003c/strong\u003e Long-term cycling performance of the dual-doped PEDOT:PSS composite film under 30% tensile strain over 1,000 cycles.\u003c/p\u003e","description":"","filename":"image2.jpg","url":"https://assets-eu.researchsquare.com/files/rs-7305535/v1/9b0f356c6c03ed96e55c85a1.jpg"},{"id":89508929,"identity":"5a46914e-9749-44c6-bf5e-6a1a91177e8e","added_by":"auto","created_at":"2025-08-20 17:53:27","extension":"jpg","order_by":3,"title":"Figure 3","display":"","copyAsset":false,"role":"figure","size":3788175,"visible":true,"origin":"","legend":"\u003cp\u003e\u003cstrong\u003eCharacterization of fully stretchable OECTs. a,\u003c/strong\u003e Schematic exploded view and cross-sectional illustration of fully stretchable OECT fabricated on a PDMS substrate with a NaCl electrolyte. \u003cstrong\u003eb,\u003c/strong\u003e Optical image of the fabricated device under different mechanical deformations, including uniaxially stretching and localized poking. \u003cstrong\u003ec,\u003c/strong\u003e Transfer characteristic and g\u003csub\u003em\u003c/sub\u003e of a device using the optimized PEDOT:PSS composite (5 wt% Triton\u003csup\u003eTM\u003c/sup\u003e X-100 and 5 wt% DMSO), measured at \u003cem\u003eV\u003c/em\u003e\u003csub\u003eDS\u003c/sub\u003e = –0.5 V. \u003cstrong\u003ed,\u003c/strong\u003e Effect of channel thickness on \u003cem\u003eI\u003c/em\u003e\u003csub\u003eON\u003c/sub\u003e\u003cem\u003e/I\u003c/em\u003e\u003csub\u003eOFF\u003c/sub\u003e and g\u003csub\u003em\u003c/sub\u003e of the device. \u003cstrong\u003ee,\u003c/strong\u003e Transfer characteristics of devices with channel lengths ranging from 1 to 5 mm. \u003cstrong\u003ef,\u003c/strong\u003e Transfer characteristics of the device under tensile strains of 0%, 10%, 20%, 30%, and after release (0%). \u003cstrong\u003eg,\u003c/strong\u003e Quantitative analysis of current levels and g\u003csub\u003em\u003c/sub\u003e of the device under tensile strains of 0%, 10%, 20%, 30%, and after release (0%). \u003cstrong\u003eh,\u003c/strong\u003e Long-term electrical stability of the device under 1,000 cycles of 30% tensile strain. \u003cstrong\u003ei, \u003c/strong\u003eSchematic of a reconfigurable OECT that operates in synaptic-mode under 0.01 M NaCl and switches to logic-mode under 1 M NaCl.\u003cstrong\u003e j, \u003c/strong\u003eTransfer characteristics of the devices gated with NaCl electrolytes at different concentrations (10⁻³, 10⁻², 10⁻¹, and 1 M). The inset shows the hysteresis window extracted from each curve as a function of NaCl concentration. \u003cstrong\u003ek,\u003c/strong\u003e Temporal characteristics of output current for devices with different NaCl concentrations. \u003cstrong\u003el,m,\u003c/strong\u003e Single pulse-induced EPSC and calculated energy consumption under undoped and DMSO-doped conditions. \u003cstrong\u003en,\u003c/strong\u003e Energy consumption reduction (%) calculated as the ratio of the energy consumption of OECTs under undoped and DMSO-doped conditions at 0.5, 1, 3, and 5 Hz.\u003c/p\u003e","description":"","filename":"image3.jpg","url":"https://assets-eu.researchsquare.com/files/rs-7305535/v1/f4d6cf10f3e55d3315c6aee7.jpg"},{"id":89509436,"identity":"d0efa682-676c-4209-9f5e-34e9987721e0","added_by":"auto","created_at":"2025-08-20 18:01:27","extension":"jpg","order_by":4,"title":"Figure 4","display":"","copyAsset":false,"role":"figure","size":2826779,"visible":true,"origin":"","legend":"\u003cp\u003e\u003cstrong\u003eLogic gate implementation using fully stretchable OECTs. a,\u003c/strong\u003e Schematic illustration of fully stretchable logic gate (inverter, NAND, and NOR). \u003cstrong\u003eb,\u003c/strong\u003e Circuit diagrams (left) and corresponding device layout illustrations (right) of fully stretchable logic gates: inverter, NAND, and NOR. \u003cstrong\u003ec,\u003c/strong\u003e Optical images of the fully stretchable inverter under 0% and 30% tensile strain. \u003cstrong\u003ed,\u003c/strong\u003e VTCs of the inverter under 0% and 30% tensile strain. \u003cstrong\u003ee,\u003c/strong\u003e Dynamic response of the inverter to voltage pulse (-1 to 1 V) with a frequency of 0.1 Hz. \u003cstrong\u003ef,\u003c/strong\u003e Optical image of fully stretchable NAND gate under 0% and 30% tensile strain. \u003cstrong\u003eg,h,\u003c/strong\u003e Logic output voltages of the NAND gate for all input combinations under 0% and 30% tensile strain, demonstrating strain-invariant NAND operation. \u003cstrong\u003ei,\u003c/strong\u003e Optical image of fully stretchable NOR gate under 0% and 30% tensile strain. \u003cstrong\u003ej,k,\u003c/strong\u003e Logic output voltages of the NOR gate for all input combinations under 0% and 30% tensile strain.\u003c/p\u003e","description":"","filename":"image4.jpg","url":"https://assets-eu.researchsquare.com/files/rs-7305535/v1/922b8487826115adee8ab406.jpg"},{"id":89509440,"identity":"8e7a86a6-0af6-4dc7-b03b-76dd1f53849d","added_by":"auto","created_at":"2025-08-20 18:01:27","extension":"jpg","order_by":5,"title":"Figure 5","display":"","copyAsset":false,"role":"figure","size":4406314,"visible":true,"origin":"","legend":"\u003cp\u003e\u003cstrong\u003eWearable adaptive logic system responsive to inflammatory edema. a,\u003c/strong\u003e Conceptual illustration of the adaptive logic system for edema-responsive therapy with memory-assisted delayed recompression. \u003cstrong\u003eb,\u003c/strong\u003e Schematic illustration of the adaptive logic system. \u003cstrong\u003ec, \u003c/strong\u003eCircuit diagram of the adaptive logic system. \u003cstrong\u003ed,\u003c/strong\u003e Optical images of the adaptive logic system under various deformations (twisting and crumpling), and demonstration of its conformal integration on the ankle. \u003cstrong\u003ee,\u003c/strong\u003e Time-dependent voltage responses corresponding to mechanical stress and temperature detected by pressure and temperature sensors. \u003cstrong\u003ef,\u003c/strong\u003e Optical images of the adaptive logic system in normal (36 °C and no swelling; logic state (1,1)) and edematous (≥ 40 °C and swelling; logic state (0,0)) states. \u003cstrong\u003eg,\u003c/strong\u003e Dynamic logic response of the adaptive logic system across edema-related states, highlighting synaptic memory-enabled delayed recompression.\u003c/p\u003e","description":"","filename":"image5.jpg","url":"https://assets-eu.researchsquare.com/files/rs-7305535/v1/53df45ec9864dcddbf81de5a.jpg"},{"id":94728820,"identity":"c42f9cd0-0b17-421a-b21a-eb65e5f398aa","added_by":"auto","created_at":"2025-10-30 07:04:18","extension":"pdf","order_by":0,"title":"","display":"","copyAsset":false,"role":"manuscript-pdf","size":14669073,"visible":true,"origin":"","legend":"","description":"","filename":"manuscript.pdf","url":"https://assets-eu.researchsquare.com/files/rs-7305535/v1/81a6d31d-7729-48f6-a3bd-0d42e76de330.pdf"},{"id":89508942,"identity":"ba3da3c8-88f8-4324-b390-b49b17b4791a","added_by":"auto","created_at":"2025-08-20 17:53:27","extension":"docx","order_by":1,"title":"","display":"","copyAsset":false,"role":"supplement","size":32658441,"visible":true,"origin":"","legend":"Supplementary Information","description":"","filename":"SIv8HNHSfinal.docx","url":"https://assets-eu.researchsquare.com/files/rs-7305535/v1/40cfe1e6111a37ca9c8c1759.docx"}],"financialInterests":"There is \u003cb\u003eNO\u003c/b\u003e Competing Interest.","formattedTitle":"Fully Stretchable Reconfigurable Organic Electrochemical Transistors for Wearable Adaptive Logic Bioelectronics","fulltext":[{"header":"Introduction","content":"\u003cp\u003eThe rapid proliferation of wearable and implantable technologies has intensified the demand for soft electronic systems that intimately conform to curvilinear, dynamically moving biological tissues\u003csup\u003e\u003cspan additionalcitationids=\"CR2 CR3\" citationid=\"CR1\" class=\"CitationRef\"\u003e1\u003c/span\u003e–\u003cspan citationid=\"CR4\" class=\"CitationRef\"\u003e4\u003c/span\u003e\u003c/sup\u003e. These systems must combine mechanical stretchability with reliable performance in physiological envionments\u003csup\u003e\u003cspan citationid=\"CR5\" class=\"CitationRef\"\u003e5\u003c/span\u003e, \u003cspan citationid=\"CR6\" class=\"CitationRef\"\u003e6\u003c/span\u003e\u003c/sup\u003e. In this context, reconfigurable soft electronics, which are devices capable of switching between different functionalities, are emerging as a powerful paradigm for next-generation bioelectronic platforms\u003csup\u003e\u003cspan citationid=\"CR7\" class=\"CitationRef\"\u003e7\u003c/span\u003e, \u003cspan citationid=\"CR8\" class=\"CitationRef\"\u003e8\u003c/span\u003e\u003c/sup\u003e. Among these, systems capable of transitioning between digital logic and analog synaptic modes are particularly desirable, as they enable multifunctional operation within a single, stretchable device. Although various reconfigurable electronic systems have been reported\u003csup\u003e\u003cspan additionalcitationids=\"CR10 CR11\" citationid=\"CR9\" class=\"CitationRef\"\u003e9\u003c/span\u003e–\u003cspan citationid=\"CR12\" class=\"CitationRef\"\u003e12\u003c/span\u003e\u003c/sup\u003e, their realization within a mechanically compliant, high-performance device architecture remains elusive. Stretchable organic electrochemical transistors (OECTs) have recently emerged as promising candidates for implementing such reconfigurable system. Their unique mechanism of volumetric ionic gating allows efficient signal transduction at low voltages in ion-rich, aqueous environments, while their intrinsic material softness ensures seamless integration with biological tissues\u003csup\u003e\u003cspan additionalcitationids=\"CR14\" citationid=\"CR13\" class=\"CitationRef\"\u003e13\u003c/span\u003e–\u003cspan citationid=\"CR15\" class=\"CitationRef\"\u003e15\u003c/span\u003e\u003c/sup\u003e. However, despite these advantages, achieving true reconfigurability within a single OECT remains a significant challenge.\u003c/p\u003e\u003cp\u003eHere, we present the first demonstration of a stretchable reconfigurable device based on OECT, enabling stable logic and synaptic operations within a single device architecture. This platform leverages conducting polymer films enhanced by a synergistic doping strategy using dimethyl sulfoxide (DMSO) and Triton™ X-100 to simultaneously improve electrical conductivity and mechanical stretchability. The resulting poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) composite maintains stable performance under 30% tensile strain and over 1,000 cycles of mechanical deformation, providing a robust material foundation for reliable OECT operation in dynamic environments. Building on this mechanical and electrical stability, we achieve reversible switching between digital logic and analog synaptic modes through electrolyte-mediated ionic reconfiguration by tuning the NaCl concentration in the gate electrolyte. Leveraging this functionality, we demonstrate logic gates, including inverter, NOR, and NAND, as well as synaptic transistors exhibiting long-term memory characteristics. Furthermore, we integrate these reconfigurable OECTs into adaptive logic bioelectronics capable of interpreting physiological cues such as swelling and temperature, thereby enabling closed-loop therapeutic feedback with edema-sensitive actuation. Collectively, this work establishes a scalable and reconfigurable framework for soft electronic systems that seamlessly integrate sensing, decision-making, and actuation within real-time biological environments.\u003c/p\u003e"},{"header":"Results","content":"\u003cp\u003eFigure \u003cspan refid=\"Fig1\" class=\"InternalRef\"\u003e1\u003c/span\u003ea illustrates the ionic reconfiguration of our fully stretchable OECT, where a single device can operate in either logic or synaptic mode depending solely on the NaCl concentration in the gate electrolyte. At high salt concentrations, the device exhibits low hysteresis, making it suitable for digital logic operations (i.e., logic-mode OECT)\u003csup\u003e\u003cspan citationid=\"CR16\" class=\"CitationRef\"\u003e16\u003c/span\u003e, \u003cspan citationid=\"CR17\" class=\"CitationRef\"\u003e17\u003c/span\u003e\u003c/sup\u003e. In contrast, at low salt concentrations, the device shows high hysteresis, which is essential for synaptic functions such as signal retention and short-to long-term memory transition (i.e., synaptic-mode OECT)\u003csup\u003e\u003cspan citationid=\"CR18\" class=\"CitationRef\"\u003e18\u003c/span\u003e\u003c/sup\u003e. This ionically tunable operation enables seamless switching between logic and synaptic modes without any change in device architecture. The underlying mechanism of this concentration-dependent behavior is governed by ion transport and electrochemical dynamics (Fig.\u0026nbsp;\u003cspan refid=\"Fig1\" class=\"InternalRef\"\u003e1\u003c/span\u003eb). At high NaCl concentrations, a large ionic gradient and efficient ion injection into the PEDOT:PSS film promote rapid electrochemical reactions, enabling fast ionic equilibration and reversible switching\u003csup\u003e\u003cspan citationid=\"CR19\" class=\"CitationRef\"\u003e19\u003c/span\u003e, \u003cspan citationid=\"CR20\" class=\"CitationRef\"\u003e20\u003c/span\u003e\u003c/sup\u003e. In contrast, at low NaCl concentrations, the ions are heavily hydrated, which reduces their mobility and slows penetration into the film due to increased steric hindrance\u003csup\u003e\u003cspan citationid=\"CR21\" class=\"CitationRef\"\u003e21\u003c/span\u003e, \u003cspan citationid=\"CR22\" class=\"CitationRef\"\u003e22\u003c/span\u003e\u003c/sup\u003e. This diminished transport efficiency results in delayed and more gradual ionic equilibration. Notably, hydration and ionic equilibrium are closely interrelated and collectively define the electrochemical behavior of the device\u003csup\u003e\u003cspan citationid=\"CR23\" class=\"CitationRef\"\u003e23\u003c/span\u003e\u003c/sup\u003e. This interplay underlies the distinct operational modes and ensures stable performance even under mechanical deformation. Figure\u0026nbsp;\u003cspan refid=\"Fig1\" class=\"InternalRef\"\u003e1\u003c/span\u003ec shows an optical image of the stretchable device array, where logic- and synaptic-mode OECTs are integrated on a soft PDMS substrate. The devices remain undamaged under 30% tensile strain, enabling robust dual-mode operation within a unified, deformable architecture.\u003c/p\u003e\u003cp\u003e\u003c/p\u003e\u003cp\u003eWe systematically investigated the effects of dual-doping PEDOT:PSS with Triton\u0026trade; X-100 and DMSO on its morphology, electrical conductivity, and mechanical stretchability. As shown in Fig.\u0026nbsp;\u003cspan refid=\"Fig2\" class=\"InternalRef\"\u003e2\u003c/span\u003ea, the chemical structures of PEDOT\u003csup\u003e+\u003c/sup\u003e, PSS\u003csup\u003e\u0026minus;\u003c/sup\u003e, Triton\u0026trade; X-100, and DMSO are presented to illustrate the molecular-level interactions between the dopants and the polymer matrix. The resulting morphological change of the PEDOT:PSS films upon sequential doping is schematically depicted in Fig.\u0026nbsp;\u003cspan refid=\"Fig2\" class=\"InternalRef\"\u003e2\u003c/span\u003eb. In the pristine state (left), PEDOT:PSS exhibits a core-shell structure where the conductive PEDOT cores are tightly surrounded by insulating PSS shells due to strong Coulombic interactions. Such interactions limit both mechanical deformability and charge transport due to insufficient π-π stacking between PEDOT chains. Doping with Triton\u0026trade; X-100 (middle), a nonionic surfactant, induces phase separation between PEDOT and PSS domains by weakening their electrostatic interaction\u003csup\u003e\u003cspan citationid=\"CR24\" class=\"CitationRef\"\u003e24\u003c/span\u003e\u003c/sup\u003e. This rearrangement increases the exposure of PEDOT regions, resulting in improved mechanical stretchability and electrical conductivity. Subsequent addition of DMSO (right), a polar solvent, further promotes the conformational ordering of PEDOT chains and enhances π-π stacking\u003csup\u003e\u003cspan citationid=\"CR25\" class=\"CitationRef\"\u003e25\u003c/span\u003e, \u003cspan citationid=\"CR26\" class=\"CitationRef\"\u003e26\u003c/span\u003e\u003c/sup\u003e. This facilitates the formation of a highly interconnected conductive network, which enables efficient charge transport and improves mechanical robustness through a soft, interconnected morphology. The morphological effects of these additives are investigated using atomic force microscopy (AFM), as shown in Fig.\u0026nbsp;\u003cspan refid=\"Fig2\" class=\"InternalRef\"\u003e2\u003c/span\u003eb (inset). The pristine PEDOT:PSS film exhibits a relatively smooth surface, whereas the Triton\u0026trade; X-100-doped film shows increased surface roughness, indicating microphase separation. The dual-doped film exhibits more defined nanostructures and increased roughness, suggesting a reorganized film morphology favorable for improved conduction. These structural changes are further supported by X-ray photoelectron spectroscopy (XPS) in Supplementary Fig.\u0026nbsp;1, which shows a reduced intensity of the PSS-related S 2p peak in the dual-doped film. This suggests a decreased PSS-to-PEDOT area ratio (2.82 \u0026rarr; 1.90), calculated from the integrated S 2p peaks at ~\u0026thinsp;169 eV (PSS) and ~\u0026thinsp;164 eV (PEDOT), consistent with selective removal or redistribution of excess PSS by DMSO. Figure\u0026nbsp;\u003cspan refid=\"Fig2\" class=\"InternalRef\"\u003e2\u003c/span\u003ec presents the ultraviolet\u0026ndash;visible (UV-Vis) absorption spectra of the three film types. The pristine and Triton\u0026trade; X-100-doped films exhibit nearly identical absorption profiles in visible to near-infrared range, indicating that Triton\u0026trade; X-100 does not markedly alter the polaronic states or the electronic structure of PEDOT. In contrast, the dual-doped film shows an enhanced near-infrared absorption, consistent with increased polaron and bipolaron formation enabled by improved π-π stacking and extended conjugation induced by DMSO. These spectral changes support the role of DMSO in driving electronic reorganization within the PEDOT network\u003csup\u003e\u003cspan citationid=\"CR27\" class=\"CitationRef\"\u003e27\u003c/span\u003e\u003c/sup\u003e. The mechanical stretchability of the PEDOT:PSS composite film is evaluated in Fig.\u0026nbsp;\u003cspan refid=\"Fig2\" class=\"InternalRef\"\u003e2\u003c/span\u003ed, where the dual-doped PEDOT:PSS film deposited on a PDMS substrate and subjected to 0% and 30% tensile strain. Both optical images and optical microscope (OM) images show that the film maintains its integrity and continuity under tensile strain, demonstrating mechanical robustness.\u003c/p\u003e\u003cp\u003e\u003c/p\u003e\u003cp\u003eSubsequently, the electrical conductivity of each formulation was evaluated to further assess the effect of doping. By doping the PEDOT:PSS with Triton\u0026trade; X-100 and evaluating the initial resistance (R₀) and crack onset strain, Triton\u0026trade; X-100 at a concentration of 5 wt% was identified as the optimal condition, exhibiting a significant reduction in resistance and enhanced mechanical stretchability (Fig.\u0026nbsp;\u003cspan refid=\"Fig2\" class=\"InternalRef\"\u003e2\u003c/span\u003ee). Optical microscope images of PEDOT:PSS composite films doped with different Triton\u0026trade; X-100 concentrations (0, 1, 3, 5, 7, 10 wt%) under increasing tensile strains are shown in Supplementary Fig.\u0026nbsp;2, revealing the crack onset strain for each formulation. Based on this optimized concentration, DMSO was subsequently introduced to further improve performance. Figure\u0026nbsp;\u003cspan refid=\"Fig2\" class=\"InternalRef\"\u003e2\u003c/span\u003ef quantitatively compares the R₀ and crack onset strain as a function of DMSO content, revealing that DMSO at a concentration of 5 wt% achieves the best trade-off between mechanical robustness and electrical performance. Supplementary Fig.\u0026nbsp;3 presents OM images of PEDOT:PSS composite films doped with 5 wt% Triton\u0026trade; X-100 and varying concentrations of DMSO (0, 3, 5, 7, and 10 wt%) under increasing tensile strain, showing the strain level at which cracks first appear for each formulation. Supplementary Fig.\u0026nbsp;4 presents the current voltage (I\u0026ndash;V) characteristics of PEDOT:PSS composite films doped with various DMSO concentrations (0, 3, 5, 7, and 10 wt%) under tensile strains from 0\u0026ndash;60%, highlighting their strain-dependent electrical behavior. Collectively, these results indicate that dual-doping the PEDOT:PSS composite with 5 wt% Triton\u0026trade; X-100 and 5 wt% DMSO provides the optimal balance of electrical conductivity and mechanical stretchability.\u003c/p\u003e\u003cp\u003eFigure \u003cspan refid=\"Fig2\" class=\"InternalRef\"\u003e2\u003c/span\u003eg presents the resistance\u0026ndash;strain profiles of three PEDOT:PSS composite film formulations: pristine, Triton\u0026trade; X-100-doped (5 wt%), and dual-doped (5 wt% Triton\u0026trade; X-100 and 5 wt% DMSO). The pristine film shows a sharp increase in resistance beyond 10% tensile strain, indicative of mechanical failure. Incorporation of Triton\u0026trade; X-100 extends the stretchability up to approximately 40%, while the additional doping with DMSO further enhances the electrical conductivity under tensile strains of up to 30%. This dual-doping strategy yields a synergistic enhancement in both stretchability and conductivity of the PEDOT:PSS composite film. Figure\u0026nbsp;\u003cspan refid=\"Fig2\" class=\"InternalRef\"\u003e2\u003c/span\u003eh shows the I\u0026ndash;V characteristics of the dual-doped PEDOT:PSS composite film under tensile strains of 0%, 10%, 20%, 30%, and after strain release (0%). The electrical response remains stable up to 30% tensile strain. As shown in Fig.\u0026nbsp;\u003cspan refid=\"Fig2\" class=\"InternalRef\"\u003e2\u003c/span\u003ei, the normalized resistance (R/R₀) exhibits minimal variation over four successive stretching\u0026ndash;releasing cycles, indicating high electrical reversibility and negligible hysteresis. These results suggest that the PEDOT:PSS composite film possesses excellent structural resilience and maintains reversible conductivity under cyclic tensile strain. The I\u0026ndash;V characteristics of the film over four stretching cycles are presented in Supplementary Fig.\u0026nbsp;5. The long-term cycling performance of the PEDOT:PSS composite film is shown in Fig.\u0026nbsp;\u003cspan refid=\"Fig2\" class=\"InternalRef\"\u003e2\u003c/span\u003ej. The ∆R/R₀ remains nearly constant over 1,000 cycles at 30% tensile strain, confirming excellent mechanical durability and electrical stability under dynamic operational conditions. The I\u0026ndash;V characteristics of the PEDOT:PSS composite film measured after 1, 10, 100, and 1000 mechanical cycles under 30% tensile strain are presented in Supplementary Fig.\u0026nbsp;6. Collectively, these findings validate that the PEDOT:PSS composite film yields a highly conductive, stretchable, and mechanically durable material platform. This composite is ideally suited for soft bioelectronic systems demanding mechanical stretchability and long-term reliability.\u003c/p\u003e\u003cp\u003eDue to their excellent mechanical and electrical properties, PEDOT:PSS composite films were employed in OECTs to validate their applicability in bioelectronic systems. Figure\u0026nbsp;\u003cspan refid=\"Fig3\" class=\"InternalRef\"\u003e3\u003c/span\u003ea presents a schematic exploded view of the stretchable OECT fabricated on PDMS substrates. The PEDOT:PSS composite was patterned by spin-coating the solution through a shadow mask onto a glass substrate, followed by thermal annealing and subsequent transfer onto PDMS, ensuring both electrical conductivity and mechanical stretchability. A corresponding cross-sectional illustration highlights the device architecture, which includes a PDMS substrate, PEDOT:PSS composite film, PDMS well, and an aqueous NaCl electrolyte, used as the gate medium to enable ion-permeable volumetric gating. The fabrication process of the stretchable OECT is detailed in Supplementary Fig.\u0026nbsp;7. Supplementary Fig.\u0026nbsp;8 schematically illustrates the electrochemical switching mechanism of PEDOT:PSS under different gate biases in OECTs. The bottom panel shows the molecular interaction between PEDOT and PSS chains, while the top diagrams represent the ionic and electronic transport pathways and corresponding structural changes within the film during doping and dedoping processes. Under a positive gave voltage, cation (e.g., Na\u003csup\u003e+\u003c/sup\u003e) are injected form the electrolyte into the PEDOT:PSS channel. These cations compensate the negatively charged PSS\u003csup\u003e\u0026minus;\u003c/sup\u003e and neutralize the positively charged PEDOT chains (polarons), leading to dedoping of PEDOT. As a result, the hole (h\u003csup\u003e+\u003c/sup\u003e) concentration decreases, the π-conjugation pathway is disrupted, and the film becomes less conductive. This dedoped state corresponds to the \u0026ldquo;OFF\u0026rdquo; state of the transistor. Conversely, when a negative gate voltage is applied, cations are expelled from the film back into the electrolyte. The PEDOT chains are reoxidized, restoring the hole concentration and thus the doped, conductive state. This reestablishes the π- π stacking interactions and enhances the overall conductivity of the film, corresponding to the \u0026ldquo;ON\u0026rdquo; state of the device.\u003c/p\u003e\u003cp\u003e\u003c/p\u003e\u003cp\u003eThe fabricated devices exhibited strong mechanical robustness under various deformation modes, including uniaxial stretching and localized poking (Fig.\u0026nbsp;\u003cspan refid=\"Fig3\" class=\"InternalRef\"\u003e3\u003c/span\u003eb). No macroscopically visible damage was observed, confirming the structural integrity and suitability of the devices for wearable and conformable applications. As shown in the transfer curves (Fig.\u0026nbsp;\u003cspan refid=\"Fig3\" class=\"InternalRef\"\u003e3\u003c/span\u003ec), OECTs incorporating optimally processed PEDOT:PSS composite films demonstrated the highest \u003cem\u003eI\u003c/em\u003e\u003csub\u003eON\u003c/sub\u003e/\u003cem\u003eI\u003c/em\u003e\u003csub\u003eOFF\u003c/sub\u003e and transconductance (g\u003csub\u003em\u003c/sub\u003e), indicating optimal electrical performance. This trend is consistent with the improved film properties discussed in Fig.\u0026nbsp;\u003cspan refid=\"Fig2\" class=\"InternalRef\"\u003e2\u003c/span\u003e. The effect of DMSO doping concentration on device performance is shown in Supplementary Fig.\u0026nbsp;9. To further investigate thickness-dependent behavior, PEDOT:PSS composite solutions were spin-coated at varying speeds, and the resulting \u003cem\u003eI\u003c/em\u003e\u003csub\u003eON\u003c/sub\u003e/\u003cem\u003eI\u003c/em\u003e\u003csub\u003eOFF\u003c/sub\u003e and threshold voltage (\u003cem\u003eV\u003c/em\u003e\u003csub\u003eth\u003c/sub\u003e) values were characterized (Fig.\u0026nbsp;\u003cspan refid=\"Fig3\" class=\"InternalRef\"\u003e3\u003c/span\u003ed). Film thicknesses of approximately 430, 340, 270, and 180 nm were obtained as the spin coating speed increased to 300, 500, 1000, and 1500 rpm, respectively. Spin-coating at 1000 rpm provided the best performance, reflecting a favorable balance between film thickness and charge transport characteristics (Supplementary Fig.\u0026nbsp;10). Based on this optimized condition, Fig.\u0026nbsp;\u003cspan refid=\"Fig3\" class=\"InternalRef\"\u003e3\u003c/span\u003ee presents the transfer characteristics of devices with varying channel lengths (1\u0026ndash;5 mm). Devices with shorter channels exhibited steeper switching curves and higher currents, while longer channels showed broader transitions, likely due to delayed ionic equilibration\u003csup\u003e\u003cspan citationid=\"CR28\" class=\"CitationRef\"\u003e28\u003c/span\u003e, \u003cspan citationid=\"CR29\" class=\"CitationRef\"\u003e29\u003c/span\u003e\u003c/sup\u003e. A channel length of 1 mm yielded optimal performance, characterized by sharp switching and the highest output current.\u003c/p\u003e\u003cp\u003eTo assess mechanical durability, transfer characteristics of optimized device were measured under uniaxial tensile strains of 0%, 10%, 20%, 30%, and after strain release (0%), applied along the channel length direction (Fig.\u0026nbsp;\u003cspan refid=\"Fig3\" class=\"InternalRef\"\u003e3\u003c/span\u003ef). In all cases, the electrical performance remained stable with minimal degradation. Quantitative analysis of \u003cem\u003eI\u003c/em\u003e\u003csub\u003eON\u003c/sub\u003e, \u003cem\u003eI\u003c/em\u003e\u003csub\u003eOFF\u003c/sub\u003e, and g\u003csub\u003em\u003c/sub\u003e of the device confirmed robust device operation under tensile strain (Fig.\u0026nbsp;\u003cspan refid=\"Fig3\" class=\"InternalRef\"\u003e3\u003c/span\u003eg). Notably, the electrical properties recovered after releasing the tensile strain, demonstrating excellent elastic recovery of the channel and interface\u003csup\u003e\u003cspan citationid=\"CR30\" class=\"CitationRef\"\u003e30\u003c/span\u003e, \u003cspan citationid=\"CR31\" class=\"CitationRef\"\u003e31\u003c/span\u003e\u003c/sup\u003e. A similar trend was observed under tensile strains applied perpendicular to the channel length direction (Supplementary Fig.\u0026nbsp;11). Figure\u0026nbsp;\u003cspan refid=\"Fig3\" class=\"InternalRef\"\u003e3\u003c/span\u003eh shows that the \u003cem\u003eI\u003c/em\u003e\u003csub\u003eON\u003c/sub\u003e/\u003cem\u003eI\u003c/em\u003e\u003csub\u003eOFF\u003c/sub\u003e of the device was maintained between 10\u0026sup2; and 10\u0026sup3; over 1,000 stretching cycles at 30% tensile strain, confirming long-term stretchability and durability. The transfer characteristics of the devices measured at representative cycles (1, 10, 100, and 1,000) further verify their stable switching behavior. Additionally, both \u003cem\u003eI\u003c/em\u003e\u003csub\u003eON\u003c/sub\u003e and \u003cem\u003eI\u003c/em\u003e\u003csub\u003eOFF\u003c/sub\u003e remained consistent over 1000 s, indicating excellent electrical stability essential for reliable device operation (Supplementary Fig.\u0026nbsp;12).\u003c/p\u003e\u003cp\u003eTo validate the reconfigurable capability of the device, we evaluated its response under different NaCl concentrations. As illustrated schematically in Fig.\u0026nbsp;\u003cspan refid=\"Fig3\" class=\"InternalRef\"\u003e3\u003c/span\u003ei, the device operates in synaptic mode at a lower concentration and transitions to logic mode at a higher concentration. Consistent with this behavior, Fig.\u0026nbsp;\u003cspan refid=\"Fig3\" class=\"InternalRef\"\u003e3\u003c/span\u003ej shows that a lower concentration (10⁻\u0026sup3; M) induces large hysteresis, whereas a higher concentration (1 M) suppresses hysteresis and improves the switching characteristic\u003csup\u003e\u003cspan citationid=\"CR32\" class=\"CitationRef\"\u003e32\u003c/span\u003e\u003c/sup\u003e. This trend is attributed to faster ionic equilibration, which accelerates charge screening, and improved ionic mobility at higher salt concentrations due to altered hydration dynamics; these effects collectively reduce transient charge trapping and stabilize the gating response\u003csup\u003e\u003cspan citationid=\"CR23\" class=\"CitationRef\"\u003e23\u003c/span\u003e, \u003cspan citationid=\"CR33\" class=\"CitationRef\"\u003e33\u003c/span\u003e\u003c/sup\u003e. The corresponding hysteresis window, defined as the maximum difference in threshold voltage between the forward and reverse gate sweeps, was found to decrease with increasing NaCl concentration, indicating that the operational characteristics of the device can be effectively tuned by modulating the ionic concentration of the electrolyte (inset of Fig.\u0026nbsp;\u003cspan refid=\"Fig3\" class=\"InternalRef\"\u003e3\u003c/span\u003ej). Such hysteresis directly influenced the temporal characteristics of the device\u0026rsquo;s output current, as depicted in Fig.\u0026nbsp;\u003cspan refid=\"Fig3\" class=\"InternalRef\"\u003e3\u003c/span\u003ek. Devices gated with low-concentration electrolytes exhibited prolonged retention times, mimicking the transition from short-term to long-term synaptic plasticity\u003csup\u003e\u003cspan citationid=\"CR17\" class=\"CitationRef\"\u003e17\u003c/span\u003e, \u003cspan citationid=\"CR34\" class=\"CitationRef\"\u003e34\u003c/span\u003e\u003c/sup\u003e, while high-concentration gating enabled rapid signal decay, which is a desirable characteristic for logic operation\u003csup\u003e\u003cspan citationid=\"CR35\" class=\"CitationRef\"\u003e35\u003c/span\u003e\u003c/sup\u003e. We compared the performance of synaptic-mode OECTs with and without DMSO doping under 0.01 M NaCl electrolyte conditions. As illustrated in Fig.\u0026nbsp;\u003cspan refid=\"Fig3\" class=\"InternalRef\"\u003e3\u003c/span\u003el,m, single pulse-induced excitatory postsynaptic current (EPSC) was measured and energy consumption was calculated under undoped and DMSO-doped conditions. The DMSO-doped devices exhibited comparable synaptic current peaks at a lower \u003cem\u003eV\u003c/em\u003e\u003csub\u003eDS\u003c/sub\u003e than the undoped devices when presynaptic pulses (-2 to 3 V) were applied at frequencies of 0.5, 1, 3, and 5 Hz\u003csup\u003e\u003cspan citationid=\"CR36\" class=\"CitationRef\"\u003e36\u003c/span\u003e\u003c/sup\u003e. Figure\u0026nbsp;\u003cspan refid=\"Fig3\" class=\"InternalRef\"\u003e3\u003c/span\u003en shows the energy consumption reduction (%) calculated as the ratio of the energy consumption of OECTs under undoped and DMSO-doped conditions at 0.5, 1, 3, and 5 Hz, which shows that DMSO doping significantly lowers energy consumption across all tested frequencies. To assess the reversibility of electrolyte-induced switching, the device was sequentially exposed to NaCl solutions of varying concentrations (0.01 M \u0026rarr; 1 M \u0026rarr; 0.01 M), with DI water rinsing between each step (Supplementary Fig.\u0026nbsp;13). The transfer curves exhibited a large hysteresis window at 0.01 M NaCl, while minimal hysteresis was observed at 1 M. When the device was returned to 0.01 M, both the hysteresis window and threshold voltage closely matched those in the initial measurement, indicating that the switching behavior is reliably reversible with changes in ionic concentration. The device\u0026rsquo;s ability to recover its initial electrical characteristics after sequential exposure to different NaCl concentrations demonstrates its operational robustness. Even after significant ionic concentration variation, the device consistently reverted to its original behavior once the initial electrolyte condition was restored. This result suggests that the device performance is not permanently altered by electrolyte exchange and that the gating mechanism is dominated by reversible ionic interactions. The consistent hysteresis window and threshold voltage before and after cycling support the reliable reusability of the device under varying electrolyte environments.\u003c/p\u003e\u003cp\u003eTo explore the application potential of our device, we fabricated fully stretchable logic gates, including inverter, NAND, and NOR circuits, using the same procedures described for the OECTs in Fig.\u0026nbsp;\u003cspan refid=\"Fig3\" class=\"InternalRef\"\u003e3\u003c/span\u003e, with the exception of the electrode geometry, which was adjusted according to each circuit configuration (Fig.\u0026nbsp;\u003cspan refid=\"Fig4\" class=\"InternalRef\"\u003e4\u003c/span\u003ea). A 1 M NaCl electrolyte, previously identified in Fig.\u0026nbsp;\u003cspan refid=\"Fig3\" class=\"InternalRef\"\u003e3\u003c/span\u003e as optimal for logic operation, was employed as the gate dielectric in all logic circuits. Accordingly, all transistors in these circuits were implemented using logic-mode OECTs. Each circuit followed a conventional logic configuration\u003csup\u003e\u003cspan additionalcitationids=\"CR38\" citationid=\"CR37\" class=\"CitationRef\"\u003e37\u003c/span\u003e\u0026ndash;\u003cspan citationid=\"CR39\" class=\"CitationRef\"\u003e39\u003c/span\u003e\u003c/sup\u003e, as schematically depicted in Fig.\u0026nbsp;\u003cspan refid=\"Fig4\" class=\"InternalRef\"\u003e4\u003c/span\u003eb. The fully stretchable inverter adopts a zero-V\u003csub\u003eGS\u003c/sub\u003e load-type configuration, utilizing two stretchable logic-mode OECTs with different channel widths, specifically designed with a channel width ratio of 1:4 between the driver and load transistors, and identical channel lengths. In the circuit configuration of the fully stretchable NAND gate, two driver transistors (T\u003csub\u003eD,A\u003c/sub\u003e and T\u003csub\u003eD,B\u003c/sub\u003e) were connected in parallel, and their outputs were fed into a common load transistor (T\u003csub\u003eL\u003c/sub\u003e). For the fully stretchable NOR gate, the two driver transistors were connected in series and then connected in series to the load transistor. Figure\u0026nbsp;\u003cspan refid=\"Fig4\" class=\"InternalRef\"\u003e4\u003c/span\u003ec presents optical images captured before and after 30% tensile stretching, confirming the stretchability of the inverter. Its voltage transfer characteristics (VTCs) were measured by sweeping the input voltage (\u003cem\u003eV\u003c/em\u003e\u003csub\u003eIN\u003c/sub\u003e) from \u0026minus;\u0026thinsp;2 to 2 V under \u003cem\u003eV\u003c/em\u003e\u003csub\u003eDD\u003c/sub\u003e = 1 V, while recording the output voltage (\u003cem\u003eV\u003c/em\u003e\u003csub\u003eOUT\u003c/sub\u003e), as shown in Fig.\u0026nbsp;\u003cspan refid=\"Fig4\" class=\"InternalRef\"\u003e4\u003c/span\u003ed. The resulting VTCs exhibit typical inverter behavior, with distinct output levels corresponding to logic input states of 0 and 1, indicating stable OECT switching under electrochemical gating\u003csup\u003e\u003cspan citationid=\"CR40\" class=\"CitationRef\"\u003e40\u003c/span\u003e\u003c/sup\u003e. Despite the applied tensile strain, the inverter retained functional operation. Supplementary Fig.\u0026nbsp;14 shows the VTCs of the inverters as a function of the channel width ratio between the load and drive transistors (W\u003csub\u003eL/D\u003c/sub\u003e), highlighting how this geometric ratio influences the switching behavior. In addition, the dynamic response of the inverter to a voltage pulse (-1 to 1 V) with a frequency 0.1 Hz demonstrated reliable and repeatable switching between logic levels without noticeable signal degradation over time (Fig.\u0026nbsp;\u003cspan refid=\"Fig4\" class=\"InternalRef\"\u003e4\u003c/span\u003ee).\u003c/p\u003e\u003cp\u003e\u003c/p\u003e\u003cp\u003eOptical images of the fully stretchable NAND gate before and after 30% tensile stretching are shown in Fig.\u0026nbsp;\u003cspan refid=\"Fig4\" class=\"InternalRef\"\u003e4\u003c/span\u003ef. The device exhibited no physical damage or optically visible cracks under 30% tensile strain. Figures\u0026nbsp;\u003cspan refid=\"Fig4\" class=\"InternalRef\"\u003e4\u003c/span\u003eg,h summarize the resulting \u003cem\u003eV\u003c/em\u003e\u003csub\u003eOUT\u003c/sub\u003e values for each input logic state combination ((0,0), (0,1), (1,0), and (1,1)) without and with 30% tensile strain, respectively. The device generated a low output voltage (logic 0) only when both inputs were at the logic state (1,1), confirming correct NAND functionality. Figure\u0026nbsp;\u003cspan refid=\"Fig4\" class=\"InternalRef\"\u003e4\u003c/span\u003ei shows optical images of a fully stretchable NOR gate before and after 30% tensile strain. No visible tearing or cracking was observed, similar to the inverter and NAND gates, confirming its robust mechanical stability. The device generated a high output voltage (logic 1) only when both inputs were at the logic state (0,0), as shown in Fig.\u0026nbsp;\u003cspan refid=\"Fig4\" class=\"InternalRef\"\u003e4\u003c/span\u003ej, demonstrating correct NOR gate operation. The device operated normally under a 30% tensile strain, demonstrating the mechanical reliability of the circuits (Fig.\u0026nbsp;\u003cspan refid=\"Fig4\" class=\"InternalRef\"\u003e4\u003c/span\u003ek). Supplementary Fig.\u0026nbsp;15 presents the static VTCs of both NAND and NOR logic gates, demonstrating that the fully stretchable logic circuits maintain proper Boolean functionality even under mechanical stretching.\u003c/p\u003e\u003cp\u003eWe further demonstrated a wearable adaptive logic system responsive to inflammatory edema that integrates both logic-mode and synaptic-mode OECTs, illustrating the applicability of fully stretchable OECTs in real-life biomedical devices (Fig.\u0026nbsp;\u003cspan refid=\"Fig5\" class=\"InternalRef\"\u003e5\u003c/span\u003ea). The system is based on a NOR logic architecture in which two physiological signals, tissue temperature and swelling, serve as logic inputs. Under normothermic conditions without swelling (state (1,1)), the system outputs logic 0, during which the compression band remains engaged to provide a constant baseline pressure for tissue support. Prior to the critical state (state (0,0)), intermediate input combinations (states (1,0) and (0,1)) may occur, representing isolated hyperthermia or swelling, respectively. In both cases, the output remains low and compression is sustained, as neither condition alone warrants therapeutic intervention. When both inputs drop to low (state (0,0)), indicative of inflammatory edema characterized by elevated temperature and increased mechanical stress, the NOR gate outputs logic 1, triggering partial decompression to alleviate tissue stress and prevent damage. Unlike conventional logic systems (Fig.\u0026nbsp;\u003cspan refid=\"Fig5\" class=\"InternalRef\"\u003e5\u003c/span\u003ea, upper right), our design incorporates a synaptic-mode OECT that memorizes and retains input signals associated with tissue swelling (Fig.\u0026nbsp;\u003cspan refid=\"Fig5\" class=\"InternalRef\"\u003e5\u003c/span\u003ea, lower right). In the post-critical state (state (1,0)), where swelling has partially resolved but elevated temperature persists, this memory effect delays recompression, provides sufficient relaxation time, and helps prevent tissue necrosis, which may result from the immediate reapplication of pressure\u003csup\u003e\u003cspan citationid=\"CR41\" class=\"CitationRef\"\u003e41\u003c/span\u003e, \u003cspan citationid=\"CR42\" class=\"CitationRef\"\u003e42\u003c/span\u003e\u003c/sup\u003e. It is also noted that in the state (0,1), where swelling persists but the temperature has normalized, the risk of tissue necrosis remains low even with immediate recompression\u003csup\u003e\u003cspan citationid=\"CR43\" class=\"CitationRef\"\u003e43\u003c/span\u003e\u003c/sup\u003e.\u003c/p\u003e\u003cp\u003e\u003c/p\u003e\u003cp\u003eA schematic of the adaptive logic system is shown in Fig.\u0026nbsp;\u003cspan refid=\"Fig5\" class=\"InternalRef\"\u003e5\u003c/span\u003eb. The system integrates a synaptic-mode OECT (using 0.01 M NaCl as the electrolyte), a NOR gate composed of logic-mode OECTs (1 M NaCl), and pressure and temperature sensors. The schematic fabrication process of the adaptive logic system is illustrated in Supplementary Fig.\u0026nbsp;16. As depicted in Fig.\u0026nbsp;\u003cspan refid=\"Fig5\" class=\"InternalRef\"\u003e5\u003c/span\u003ec, the circuit comprises a synaptic-mode transistor (T\u003csub\u003eS\u003c/sub\u003e) that functions as a physiological signal memorizer and interfaces with the NOR gate, which includes a load transistor (T\u003csub\u003eL\u003c/sub\u003e) and two drive transistors (T\u003csub\u003eD,A\u003c/sub\u003e and T\u003csub\u003eD,B\u003c/sub\u003e). The T\u003csub\u003eS\u003c/sub\u003e captures the swelling-induced signal and modulates the gate of T\u003csub\u003eD,A\u003c/sub\u003e, thereby enabling sustained output (\u003cem\u003eV\u003c/em\u003e\u003csub\u003eOUT\u003c/sub\u003e). Figure\u0026nbsp;\u003cspan refid=\"Fig5\" class=\"InternalRef\"\u003e5\u003c/span\u003ed demonstrates the mechanical robustness of the system, showing optical images under twisting, crumpling, and wearable conditions, confirming reliable performance under practical deformation scenarios. Figure\u0026nbsp;\u003cspan refid=\"Fig5\" class=\"InternalRef\"\u003e5\u003c/span\u003ee presents the voltage responses over time in relation to mechanical stress and temperature, as monitored by the pressure and temperature sensors, simulating swelling and thermal stimuli. These results identify the specific input conditions necessary to induce output activation. A balloon was used as a tissue phantom to mimic swelling-induced mechanical deformation. To simulate the mechanical stress induced by swelling, the device was laminated onto the balloon surface, which was incrementally inflated to replicate tissue expansion. The resulting stress on the device was estimated using the thin-wall pressure vessel approximation derived from Laplace\u0026rsquo;s law\u003csup\u003e\u003cspan citationid=\"CR44\" class=\"CitationRef\"\u003e44\u003c/span\u003e, \u003cspan citationid=\"CR45\" class=\"CitationRef\"\u003e45\u003c/span\u003e\u003c/sup\u003e. This classical relation describes the circumferential stress developed in thin-wall spherical or cylindrical membranes under internal pressure, assuming uniform pressure distribution and a wall thickness much smaller than the radius. The circumferential stress \u003cem\u003eσ\u003c/em\u003e was calculated as:\u003cdiv id=\"Equa\" class=\"Equation\"\u003e\u003cdiv format=\"TEX\" class=\"mathdisplay\" id=\"FileID_Equa\" name=\"EquationSource\"\u003e\n$$\\:\\sigma\\:=\\:\\frac{P\\:\\bullet\\:r}{2t}$$\u003c/div\u003e\u003c/div\u003e\u003c/p\u003e\u003cp\u003ewhere \u003cem\u003eP\u003c/em\u003e is the internal pressure, \u003cem\u003er\u003c/em\u003e is the inflated radius, and \u003cem\u003et\u003c/em\u003e is the wall thickness. The calculated mechanical stress was used as a representative metric for the mechanical load applied to the stretchable device under simulated swelling conditions. Supplementary Fig.\u0026nbsp;17 illustrates the schematic fabrication process of the stretchable pressure sensor, and the corresponding voltage responses as a function of mechanical stress is shown in Supplementary Fig.\u0026nbsp;18a. Supplementary Fig.\u0026nbsp;18b shows the OM image of AgNWs coated on nylon, confirming their contribution to electrical conductivity. The voltage response of the temperature sensor as a function of temperature is presented in Supplementary Fig.\u0026nbsp;19. Optical images of the system under initial (36\u0026deg;C, no swelling) and inflammatory edema (\u0026ge;\u0026thinsp;40\u0026deg;C, \u0026ge; 64.5MPa) states are shown in Fig.\u0026nbsp;\u003cspan refid=\"Fig5\" class=\"InternalRef\"\u003e5\u003c/span\u003ef, confirming device functionality under simulated inflammatory edema conditions.\u003c/p\u003e\u003cp\u003eBalloon expansion mimicked swelling, while localized hyperthermia was induced via Joule heating from the stretchable heater. At 3.5 V, the heater generated temperatures exceeding 40\u0026deg;C (Supplementary Fig.\u0026nbsp;20). The schematic fabrication process of the stretchable heater and assembly of the heater-balloon system for edema simulation are presented in Supplementary Fig.\u0026nbsp;21. The system maintained continuous contact and actively responded to such conditions. The dynamic behavior of the adaptive logic system is summarized in Fig.\u0026nbsp;\u003cspan refid=\"Fig5\" class=\"InternalRef\"\u003e5\u003c/span\u003eg. In the hyperthermic (state (1,0)) or swelling (state (0,1)), the system outputs logic 0 and maintains compression, similar to the normal state. Upon transitioning to inflammatory edema (state (0,0)), the system outputs logic 1, triggering compression bandage release to prevent ischemic damage. As recovery progresses from state (0,0) to state (1,0), where swelling subsides but elevated temperature persists, the synaptic-mode OECT retains the decompressed state. This memory function enables gradual recompression rather than abrupt pressure reapplication, thereby minimizing the risk of tissue necrosis. The long-term memory characteristics of our synaptic-mode OECT are demonstrated in Supplementary Fig.\u0026nbsp;22. This delayed response is visualized through the connection of the system\u0026rsquo;s time-dependent output voltage to an LED (Supplementary Fig.\u0026nbsp;23). In contrast to conventional systems that reapply compression too quickly, our adaptive logic platform supports condition-dependent, progressive recompression, offering a closed-loop, logic-controlled therapeutic solution for safe and effective edema management.\u003c/p\u003e"},{"header":"Discussion","content":"\u003cp\u003eIn this study, we present a high-performance, fully stretchable OECT platform with reconfigurable functionality, enabling transition between logic- and synaptic-mode operation within a single device architecture. By introducing a dual-doping strategy using Triton™ X-100 and DMSO, we significantly enhanced the electrical conductivity and mechanical stretchability of PEDOT:PSS films. These PEDOT:PSS composites enabled robust OECT performance under 30% tensile strain and maintained stable characteristics over 1,000 mechanical cycles, confirming their suitability for use in deformable bioelectronic systems. The operational mode of the OECTs was dynamically reconfigured by tuning the NaCl concentration in the gate electrolyte, allowing the same device to function either as a digital logic switch or a synaptic transistor with analog memory behavior. Leveraging this ionic tunability, we successfully implemented fundamental logic gate circuits, including inverter, NAND, and NOR, which exhibited reliable operation even under substantial mechanical deformation. Beyond logic circuits, we further developed a wearable adaptive logic bioelectronic that combines logic-mode and synaptic-mode OECTs to enable real-time therapeutic feedback in response to physiological stimuli. This system autonomously interprets combinations of swelling and temperature as logic inputs and adjusts compression accordingly. Importantly, the integration of synaptic-mode OECTs allows for temporary signal retention, which enables delayed recompression after partial symptom recovery. This function mitigates the risk of ischemic or pressure-induced injuries, offering a closed-loop and condition-aware therapeutic mechanism. The system demonstrated robust performance on a curvilinear surface, reliably responding to simulated inflammatory edema conditions, thereby validating its potential for next-generation wearable healthcare devices. Overall, our work establishes a scalable materials and device platform for reconfigurable, stretchable bioelectronics capable of real-time sensing, logic processing, and actuation. This approach not only provides foundational insight into multifunctional soft transistors but also paves the way for their integration into intelligent therapeutic systems, adaptive wearables, and bio-interfaced soft robotics.\u003c/p\u003e"},{"header":"Methods","content":"\u003cp\u003e\u003cb\u003eMaterials\u003c/b\u003e\u003c/p\u003e\u003cp\u003eDMSO, Triton™ X-100, sodium chloride (NaCl, ≥ 99.5%), and (3-aminopropyl)triethoxysilane (APTES, 99%) were obtained from Sigma-Aldrich and used as received. PEDOT:PSS (Clevios™ PH1000, Heraeus) was purchased from Ossila Limited and used as the primary conducting polymer, while polydimethylsiloxane (PDMS, Sylgard™ 184) was acquired from Dow Corning Corporation.\u003c/p\u003e\u003cp\u003e\u003cb\u003ePreparation of elastomeric substrate\u003c/b\u003e\u003c/p\u003e\u003cp\u003ePDMS substrates were prepared by blending the base prepolymer and curing agent at a 10:1 weight ratio, followed by spin-coating the mixture onto glass substrates at 300 rpm for 30 seconds. The coated films were subsequently thermally cured in an oven at 90°C for 2 hours. To render the surface hydrophilic, the cured PDMS films were exposed to UV–ozone treatment for 20 minutes and then immersed in a 3 wt% APTES solution in deionized water for an additional 20 minutes.\u003c/p\u003e\u003cp\u003e\u003cb\u003ePreparation of stretchable PEDOT:PSS composite film\u003c/b\u003e\u003c/p\u003e\u003cp\u003eAn aqueous PEDOT:PSS solution containing 5 wt% DMSO and 5 wt% Triton™ X-100 was stirred at room temperature for 12 hours. The resulting composite film was fabricated by spin-coating the mixed solution onto a pre-cleaned glass substrate, followed by annealing at 100°C for 10 minutes. A surface-modified PDMS substrate was laminated onto the patterned PEDOT:PSS film and then peeled off to complete the transfer process. The transferred film was subsequently annealed on a hot plate at 140°C for 10 minutes to enhance its electrical conductivity and interfacial adhesion.\u003c/p\u003e\u003cp\u003e\u003cb\u003eFabrication of fully stretchable OECTs, inverter, NAND, and NOR gates\u003c/b\u003e\u003c/p\u003e\u003cp\u003eThe fabrication process of fully stretchable OECTs involved three key steps: preparation of the stretchable substrate, patterning of the PEDOT:PSS composite-based channel, and formation of the ion-permeable NaCl-based gate electrolyte. To prevent electrolyte leakage during mechanical deformation, a PDMS well was integrated into the device architecture. NaCl electrolytes with concentrations ranging from 10⁻³ M to 1 M were prepared by dissolving NaCl in deionized water. For synaptic-mode OECTs, a low-concentration solution (0.01 M) was used to induce ionic hysteresis, whereas a high-concentration solution (1 M) was employed in logic-mode OECTs and their integrated circuits to enable sharp switching behavior.\u003c/p\u003e\u003cp\u003e\u003cb\u003eFabrication of stretchable pressure sensor\u003c/b\u003e\u003c/p\u003e\u003cp\u003eTo fabricate the pressure sensor, a square piece of nylon fabric (1 mm × 1 mm; polyamide fiber, commonly used in commercial stockings) was prepared and placed onto a clean glass substrate. A silver nanowire (AgNW) solution was then drop-cast onto the fabric surface and allowed to spread uniformly. The sample was subsequently annealed at 200°C for 30 minutes in ambient air to enhance nanowire interconnection and adhesion to the nylon substrate. Separately, a PEDOT:PSS composite film was prepared and used as the bottom electrode. The silver nanowire-coated nylon fabric was then aligned and fixed onto the PEDOT:PSS electrode using a thin PDMS encapsulant, completing the pressure sensor assembly and ensuring reliable mechanical coupling and signal transduction between the layers.\u003c/p\u003e\u003cp\u003e\u003cb\u003eFabrication of wearable adaptive logic system responsive to inflammatory edema\u003c/b\u003e\u003c/p\u003e\u003cp\u003eAn adaptive logic system was implemented by integrating a NAND gate based on a logic-mode OECT, a synaptic-mode OECT, a pressure sensor, and a temperature sensor into a soft, wearable platform. The system was designed to release pressure only when both swelling (detected via pressure) and elevated temperature were simultaneously present, consistent with NAND logic behavior. The fabrication process followed the OECT fabrication procedures described above, with the addition of the pressure and temperature sensors. The pressure sensor was fabricated using the same method as previously described. The temperature sensor was commercially sourced and attached to the device using rubber paste. Notably, the rubber paste and temperature sensor exhibited strong interfacial adhesion, with no delamination observed under 30% tensile strain.\u003c/p\u003e\u003cp\u003e\u003cb\u003eMaterials characterization and device measurements\u003c/b\u003e\u003c/p\u003e\u003cp\u003eThe electrical performance of the transistor and its synaptic functions was characterized using a semiconductor parameter analyzer (4200-SCS, Keithley Instruments Inc.) under ambient conditions (relative humidity ~ 50%, unless otherwise noted). Presynaptic pulses for synaptic function evaluation were generated using a waveform generator (DG4062, RIGOL Technologies Inc.). A power supply (2230-30-3, Keithley Instruments Inc.) and function generator were used for both static and dynamic characterizations of the inverter, NAND, and NOR logic gates. The mechanical performance of the device was assessed using a custom-built uniaxial stretcher. AFM (Park NX-100, Park Systems Corp.) images were taken to visualize the morphologies and structures of the PEDOT:PSS composite films. XPS (Ulvac-PHI, PHI GENESIS) was performed to examine the surface composition and PEDOT-to-PSS ratio changes in pristine, Triton™ X-100-doped and dual-doped PEDOT:PSS films. Absorption spectra data in the visible region were obtained by UV-Vis spectrophotometer (V-770, JASCO Co.).\u003c/p\u003e"},{"header":"Declarations","content":"\u003ch2\u003eCompeting interests\u003c/h2\u003e\n\u003cp\u003eThe authors declare no competing financial interests.\u003c/p\u003e\n\u003ch2\u003eMaterials \u0026amp; Correspondence\u003c/h2\u003e\n\u003cp\u003eCorrespondence and requests for materials should be addressed to H.S.\u003c/p\u003e\n\u003ch2\u003eAuthor contribution\u003c/h2\u003e\n\u003cp\u003eH.K, T.K., and H.S. conceived and designed the experiment. H.K., T.K., H.L., and Y.K. performed the experiments. H.K., and T.K. characterized device performance. H.K., T.K., and H.S. analyzed the data. H.K., and H.S. wrote the paper. All the authors revised the manuscript.\u003c/p\u003e\n\u003ch2\u003eAcknowledgments\u003c/h2\u003e\n\u003cp\u003eThis research has been supported by the POSCO Science Fellowship of POSCO TJ Park Foundation and Korea Institute for Advancement of Technology(KIAT) grant funded by the Korea Government(MOTIE) (RS-2025-02214408, HRD Program for Industrial Innovation)\u003c/p\u003e\n\u003ch2\u003eData availability\u003c/h2\u003e\n\u003cp\u003eAll data needed to evaluate the conclusions in the paper are presented in the paper and/or the Supplementary Information. The data that support the findings of this study or additional data related to this paper are available from the authors upon request.\u003c/p\u003e"},{"header":"References","content":"\u003col\u003e\u003cli\u003e\u003cspan\u003eLim HR et al (2020) Advanced soft materials, sensor integrations, and applications of wearable flexible hybrid electronics in healthcare, energy, and environment. 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Adv Mater Technol 1:1600061\u003c/span\u003e\u003c/li\u003e\u003c/ol\u003e"}],"fulltextSource":"","fullText":"","funders":[],"hasAdminPriorityOnWorkflow":false,"hasManuscriptDocX":true,"hasOptedInToPreprint":true,"hasPassedJournalQc":"","hasAnyPriority":true,"hideJournal":true,"highlight":"","institution":"","isAcceptedByJournal":false,"isAuthorSuppliedPdf":false,"isDeskRejected":"","isHiddenFromSearch":false,"isInQc":false,"isInWorkflow":false,"isPdf":false,"isPdfUpToDate":true,"isWithdrawnOrRetracted":false,"journal":{"display":true,"email":"[email protected]","identity":"researchsquare","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":true,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"/submission","title":"Research Square","twitterHandle":"researchsquare","acdcEnabled":true,"dfaEnabled":false,"editorialSystem":"","reportingPortfolio":"","inReviewEnabled":false,"inReviewRevisionsEnabled":true},"keywords":"Stretchable, organic electrochemical transistors, reconfigurable, synaptic-mode, logic-mode, wearable adaptive logic bioelectronics","lastPublishedDoi":"10.21203/rs.3.rs-7305535/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-7305535/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"\u003cp\u003eReconfigurable soft electronic devices that can alter their functionalities under mechanical deformation are essential for adaptive bioelectronics. Here, we report a scalable and ionically reconfigurable platform based on fully stretchable organic electrochemical transistors, enabling stable logic and synaptic operations within a single device architecture. The devices reversibly switch between these modes through electrolyte-mediated ionic reconfiguration. This platform leverages conducting polymer films optimized via a dual-doping strategy integrating a polar solvent and a nonionic surfactant, yielding mechanically stretchable and electrically stable devices that maintain performance under repeated deformation. Functional switching between digital logic and analog synaptic behavior is achieved by tuning the ionic environment of the gate electrolyte, allowing a single device to operate as both logic transistors for gates such as inverters, NAND, and NOR, and synaptic transistors supporting long-term memory. We integrate these reconfigurable devices into an adaptive logic bioelectronic platform capable of interpreting physiological signals and potentially enabling autonomous compression regulation.\u003c/p\u003e","manuscriptTitle":"Fully Stretchable Reconfigurable Organic Electrochemical Transistors for Wearable Adaptive Logic Bioelectronics","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2025-08-20 17:53:19","doi":"10.21203/rs.3.rs-7305535/v1","editorialEvents":[{"type":"communityComments","content":0}],"status":"published","journal":{"display":true,"email":"[email protected]","identity":"researchsquare","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":true,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"/submission","title":"Research Square","twitterHandle":"researchsquare","acdcEnabled":true,"dfaEnabled":false,"editorialSystem":"","reportingPortfolio":"","inReviewEnabled":false,"inReviewRevisionsEnabled":true}}],"origin":"","ownerIdentity":"e561bee6-fb95-4afe-a386-9ae3f29c30f3","owner":[],"postedDate":"August 20th, 2025","published":true,"recentEditorialEvents":[],"rejectedJournal":[],"revision":"","amendment":"","status":"posted","subjectAreas":[{"id":53384735,"name":"Physical sciences/Engineering/Biomedical engineering"},{"id":53384736,"name":"Physical sciences/Materials science/Soft materials/Organic molecules in materials science"},{"id":53384737,"name":"Physical sciences/Materials science/Materials for devices/Electronic devices"}],"tags":[],"updatedAt":"2025-10-29T13:45:45+00:00","versionOfRecord":[],"versionCreatedAt":"2025-08-20 17:53:19","video":"","vorDoi":"","vorDoiUrl":"","workflowStages":[]},"version":"v1","identity":"rs-7305535","journalConfig":"researchsquare"},"__N_SSP":true},"page":"/article/[identity]/[[...version]]","query":{"redirect":"/article/rs-7305535","identity":"rs-7305535","version":["v1"]},"buildId":"8U1c8b4HqxoKbykW_rLl7","isFallback":false,"isExperimentalCompile":false,"dynamicIds":[84888],"gssp":true,"scriptLoader":[]}

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