Variability in 2D Field Effect Transistors

Variability in 2D Field Effect Transistors | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Article Variability in 2D Field Effect Transistors Saptarshi Das, Najam U Sakib, Muhtasim Ul Karim Sadaf, Subir Ghosh, and 4 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-7823534/v1 This work is licensed under a CC BY 4.0 License Status: Under Review Version 1 posted You are reading this latest preprint version Abstract As silicon-based field-effect transistors (FETs) approach their scaling limits, two-dimensional (2D) semiconductors are emerging as strong contenders for next-generation nanoelectronics. A major barrier to their integration, however, is device-to-device variability that undermines circuit reliability. Here, we present a systematic study linking variability in 2D FETs to both material growth and dielectric integration. Using six distinct metal organic chemical vapor deposition (MOCVD) growth conditions, we systematically studied the impact of epitaxy, grain boundary, and bilayer island coverage on electrical uniformity. We further examine four gate dielectrics: HfO2, Al2O3, ZrO2, and AlN, highlighting the role of dielectric-induced interface roughness in exacerbating variability. Our analysis separates long-range variations from micron-scale fluctuations, revealing that MoS2 exhibits substantially lower variability than WSe2, which remains strongly inhomogeneous even at short length scales. Notably, our HfO2-gated MoS2 FETs, featuring ~1 nm equivalent oxide thickness (EOT) achieve a Pelgrom slope of 7.5 mV-µm, approaching the silicon benchmark of 2.8 mV-µm. These devices also deliver an on-state current up to 300 µA/µm, subthreshold swing as low as 73 mV/dec for 35 nm channel lengths, and a record high mobility of 120 cm2/V-s in long-channel devices. These results demonstrate that variability mitigation can be achieved without compromising performance, and to our knowledge, represents the first statistical correlation of device level variability with both material growth parameters and dielectric choice. This work provides essential design and processing guidelines for scalable, high-performance, and reliable 2D electronics. Physical sciences/Materials science/Materials for devices/Electronic devices Physical sciences/Materials science/Nanoscale materials/Two-dimensional materials Full Text Additional Declarations There is NO Competing Interest. Cite Share Download PDF Status: Under Review Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-7823534","acceptedTermsAndConditions":true,"allowDirectSubmit":false,"archivedVersions":[],"articleType":"Article","associatedPublications":[],"authors":[{"id":543717307,"identity":"8ffd68a5-0d74-473f-b5d9-c184aff39515","order_by":0,"name":"Saptarshi 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A major barrier to their integration, however, is device-to-device variability that undermines circuit reliability. Here, we present a systematic study linking variability in 2D FETs to both material growth and dielectric integration. Using six distinct metal organic chemical vapor deposition (MOCVD) growth conditions, we systematically studied the impact of epitaxy, grain boundary, and bilayer island coverage on electrical uniformity. We further examine four gate dielectrics: HfO2, Al2O3, ZrO2, and AlN, highlighting the role of dielectric-induced interface roughness in exacerbating variability. Our analysis separates long-range variations from micron-scale fluctuations, revealing that MoS2 exhibits substantially lower variability than WSe2, which remains strongly inhomogeneous even at short length scales. Notably, our HfO2-gated MoS2 FETs, featuring ~1 nm equivalent oxide thickness (EOT) achieve a Pelgrom slope of 7.5 mV-µm, approaching the silicon benchmark of 2.8 mV-µm. These devices also deliver an on-state current up to 300 µA/µm, subthreshold swing as low as 73 mV/dec for 35 nm channel lengths, and a record high mobility of 120 cm2/V-s in long-channel devices. These results demonstrate that variability mitigation can be achieved without compromising performance, and to our knowledge, represents the first statistical correlation of device level variability with both material growth parameters and dielectric choice. This work provides essential design and processing guidelines for scalable, high-performance, and reliable 2D electronics.","manuscriptTitle":"Variability in 2D Field Effect Transistors","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2025-11-20 10:36:59","doi":"10.21203/rs.3.rs-7823534/v1","editorialEvents":[],"status":"published","journal":{"display":true,"email":"[email protected]","identity":"nature-communications","isNatureJournal":true,"hasQc":false,"allowDirectSubmit":false,"externalIdentity":"NCOMMS","sideBox":"Learn more about [Nature Communications](http://www.nature.com/ncomms/)","snPcode":"","submissionUrl":"https://mts-ncomms.nature.com/","title":"Nature Communications","twitterHandle":"","acdcEnabled":true,"dfaEnabled":true,"editorialSystem":"ejp","reportingPortfolio":"Nature Communications","inReviewEnabled":true,"inReviewRevisionsEnabled":false}}],"origin":"","ownerIdentity":"1c1c78fa-bddd-4c45-8af7-c2783248d6d8","owner":[],"postedDate":"November 20th, 2025","published":true,"recentEditorialEvents":[],"rejectedJournal":[],"revision":"","amendment":"","status":"under-review","subjectAreas":[{"id":57845977,"name":"Physical sciences/Materials science/Materials for devices/Electronic devices"},{"id":57845978,"name":"Physical sciences/Materials science/Nanoscale materials/Two-dimensional materials"}],"tags":[],"updatedAt":"2025-11-20T10:36:59+00:00","versionOfRecord":[],"versionCreatedAt":"2025-11-20 10:36:59","video":"","vorDoi":"","vorDoiUrl":"","workflowStages":[]},"version":"v1","identity":"rs-7823534","journalConfig":"researchsquare"},"__N_SSP":true},"page":"/article/[identity]/[[...version]]","query":{"redirect":"/article/rs-7823534","identity":"rs-7823534","version":["v1"]},"buildId":"8U1c8b4HqxoKbykW_rLl7","isFallback":false,"isExperimentalCompile":false,"dynamicIds":[84888],"gssp":true,"scriptLoader":[]}