Quantum Transport Characteristics and High-Precision Numerical Simulation of Nanoscale FinFETs

Quantum Transport Characteristics and High-Precision Numerical Simulation of Nanoscale FinFETs | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Quantum Transport Characteristics and High-Precision Numerical Simulation of Nanoscale FinFETs Yuchen Qiu, Dongxv Xiao, Yawen Zheng, Hung-Chun Li, Benfu Jiang, and 1 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-9354687/v1 This work is licensed under a CC BY 4.0 License Status: Under Review Version 1 posted 6 You are reading this latest preprint version Abstract As semiconductor devices scale to the 14 nm technology node and beyond, quantum confinement and high-field effects increasingly degrade the accuracy of conventional semiclassical transport models, whereas fully quantum approaches remain computationally expensive for realistic three-dimensional device-scale simulations. This work proposes a quantum-corrected drift--diffusion framework with three key features: (1) a dynamic quantum-correction factor that adapts to the electric-field gradient and carrier density, (2) a physics-inspired hybrid preconditioner that couples Schur-complement treatment near the interface with algebraic multigrid in the bulk, and (3) a weighting-function-based adaptive mesh strategy that preserves resolution in critical regions while reducing the global problem size. For a 14 nm FinFET case, the proposed method improves the prediction of inversion-layer charge redistribution and short-channel behavior and reduces the computation time from 14.5 h to 4.6 h while lowering the memory footprint from 48 GB to 16 GB. These results demonstrate that the proposed framework provides an efficient and practical tool for device simulation and optimization at advanced technology nodes. quantum transport simulation nanoscale FinFET high-precision numerical simulation adaptive meshing quantum correction Full Text Additional Declarations No competing interests reported. Cite Share Download PDF Status: Under Review Version 1 posted Reviews received at journal 19 May, 2026 Reviewers agreed at journal 10 May, 2026 Reviewers invited by journal 07 May, 2026 Editor assigned by journal 17 Apr, 2026 Submission checks completed at journal 17 Apr, 2026 First submitted to journal 08 Apr, 2026 You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-9354687","acceptedTermsAndConditions":true,"allowDirectSubmit":false,"archivedVersions":[],"articleType":"Research Article","associatedPublications":[],"authors":[{"id":641526804,"identity":"bcffde0f-7018-4e6d-84eb-8e70fd9b5f00","order_by":0,"name":"Yuchen Qiu","email":"","orcid":"","institution":"Zhuhai College of Science and Technology","correspondingAuthor":false,"prefix":"","firstName":"Yuchen","middleName":"","lastName":"Qiu","suffix":""},{"id":641526805,"identity":"9c75b205-124a-46fa-a944-c776799b22cd","order_by":1,"name":"Dongxv Xiao","email":"","orcid":"","institution":"Zhuhai College of Science and Technology","correspondingAuthor":false,"prefix":"","firstName":"Dongxv","middleName":"","lastName":"Xiao","suffix":""},{"id":641526806,"identity":"da741ec2-89ea-475f-9ae7-5b36befdf90c","order_by":2,"name":"Yawen Zheng","email":"","orcid":"","institution":"Zhuhai College of Science and Technology","correspondingAuthor":false,"prefix":"","firstName":"Yawen","middleName":"","lastName":"Zheng","suffix":""},{"id":641526807,"identity":"b72f034e-8624-4b7f-a038-9b9514cc63c2","order_by":3,"name":"Hung-Chun Li","email":"","orcid":"","institution":"Lingyange Semiconductor Incorporated","correspondingAuthor":false,"prefix":"","firstName":"Hung-Chun","middleName":"","lastName":"Li","suffix":""},{"id":641526808,"identity":"75127567-c5f9-4946-b2d4-d2abcc413576","order_by":4,"name":"Benfu Jiang","email":"data:image/png;base64,iVBORw0KGgoAAAANSUhEUgAAAZAAAAAyAQMAAABI0h/eAAAABlBMVEX///8AAABVwtN+AAAACXBIWXMAAA7EAAAOxAGVKw4bAAAAsklEQVRIiWNgGAWjYBAC9gYGBokPUI4EUVp4DjAwSM4AMUjSIs1Dmhb23oe3bf7Y2dszMB+8zcNgl0dYC89xY+scnuTEHga2ZGsehuRiglrsJdLYpHMkDiTwMPCYAV14ILGBoC0gLRYGB+x5GPi/kaCFIeEAYw8DDxuRWniOMVv2HAD65TCbseUcg2QitLC3Md74AQwx9vbmhzfeVNgR1oIAzCDCgHj1o2AUjIJRMArwAABTry21IY/f0QAAAABJRU5ErkJggg==","orcid":"","institution":"Zhuhai College of Science and Technology","correspondingAuthor":true,"prefix":"","firstName":"Benfu","middleName":"","lastName":"Jiang","suffix":""},{"id":641526809,"identity":"af44b80f-61ed-41ed-aceb-08449b539e47","order_by":5,"name":"Xinxin Pan","email":"","orcid":"","institution":"Zhuhai College of Science and Technology","correspondingAuthor":false,"prefix":"","firstName":"Xinxin","middleName":"","lastName":"Pan","suffix":""}],"badges":[],"createdAt":"2026-04-08 09:36:16","currentVersionCode":1,"declarations":"","doi":"10.21203/rs.3.rs-9354687/v1","doiUrl":"https://doi.org/10.21203/rs.3.rs-9354687/v1","draftVersion":[],"editorialEvents":[],"editorialNote":"","failedWorkflow":false,"files":[{"id":109760828,"identity":"64e08efc-6122-48b7-9ff0-5eaeba648c2c","added_by":"auto","created_at":"2026-05-22 07:29:12","extension":"pdf","order_by":1,"title":"","display":"","copyAsset":false,"role":"manuscript-pdf","size":5319355,"visible":true,"origin":"","legend":"","description":"","filename":"finfetspringersgnl.pdf","url":"https://assets-eu.researchsquare.com/files/rs-9354687/v1_covered_3b2d83ae-1226-4c58-bc33-dfdc35fddab2.pdf"}],"financialInterests":"No competing interests reported.","formattedTitle":"Quantum Transport Characteristics and High-Precision Numerical Simulation of Nanoscale FinFETs","fulltext":[],"fulltextSource":"","fullText":"","funders":[],"hasAdminPriorityOnWorkflow":false,"hasManuscriptDocX":false,"hasOptedInToPreprint":true,"hasPassedJournalQc":"","hasAnyPriority":false,"hideJournal":false,"highlight":"","institution":"","isAcceptedByJournal":false,"isAuthorSuppliedPdf":true,"isDeskRejected":"","isHiddenFromSearch":false,"isInQc":false,"isInWorkflow":false,"isPdf":true,"isPdfUpToDate":true,"isWithdrawnOrRetracted":false,"journal":{"display":true,"email":"[email protected]","identity":"journal-of-computational-electronics","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":false,"externalIdentity":"jcel","sideBox":"Learn more about [Journal of Computational Electronics](https://www.springer.com/journal/10825)","snPcode":"10825","submissionUrl":"https://submission.nature.com/new-submission/10825/3","title":"Journal of Computational Electronics","twitterHandle":"","acdcEnabled":true,"dfaEnabled":true,"editorialSystem":"stoa","reportingPortfolio":"Springer Hybrid","inReviewEnabled":true,"inReviewRevisionsEnabled":false},"keywords":"quantum transport simulation, nanoscale FinFET, high-precision numerical simulation, adaptive meshing, quantum correction","lastPublishedDoi":"10.21203/rs.3.rs-9354687/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-9354687/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"\u003cp\u003eAs semiconductor devices scale to the 14 nm technology node and beyond, quantum confinement and high-field effects increasingly degrade the accuracy of conventional semiclassical transport models, whereas fully quantum approaches remain computationally expensive for realistic three-dimensional device-scale simulations. This work proposes a quantum-corrected drift--diffusion framework with three key features: (1) a dynamic quantum-correction factor that adapts to the electric-field gradient and carrier density, (2) a physics-inspired hybrid preconditioner that couples Schur-complement treatment near the interface with algebraic multigrid in the bulk, and (3) a weighting-function-based adaptive mesh strategy that preserves resolution in critical regions while reducing the global problem size. For a 14 nm FinFET case, the proposed method improves the prediction of inversion-layer charge redistribution and short-channel behavior and reduces the computation time from 14.5 h to 4.6 h while lowering the memory footprint from 48 GB to 16 GB. These results demonstrate that the proposed framework provides an efficient and practical tool for device simulation and optimization at advanced technology nodes.\u003c/p\u003e","manuscriptTitle":"Quantum Transport Characteristics and High-Precision Numerical Simulation of Nanoscale FinFETs","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2026-05-18 06:42:36","doi":"10.21203/rs.3.rs-9354687/v1","editorialEvents":[{"type":"communityComments","content":0},{"type":"editorInvitedReview","content":"","date":"2026-05-19T07:34:51+00:00","index":"hide","fulltext":""},{"type":"reviewerAgreed","content":"167355754986376945105992436020739675411","date":"2026-05-11T01:29:25+00:00","index":"hide","fulltext":""},{"type":"reviewersInvited","content":"","date":"2026-05-07T12:46:15+00:00","index":"","fulltext":""},{"type":"editorAssigned","content":"","date":"2026-04-17T04:23:58+00:00","index":"","fulltext":""},{"type":"checksComplete","content":"","date":"2026-04-17T04:23:01+00:00","index":"","fulltext":""},{"type":"submitted","content":"Journal of Computational Electronics","date":"2026-04-08T08:47:49+00:00","index":"","fulltext":""}],"status":"published","journal":{"display":true,"email":"[email protected]","identity":"journal-of-computational-electronics","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":false,"externalIdentity":"jcel","sideBox":"Learn more about [Journal of Computational Electronics](https://www.springer.com/journal/10825)","snPcode":"10825","submissionUrl":"https://submission.nature.com/new-submission/10825/3","title":"Journal of Computational Electronics","twitterHandle":"","acdcEnabled":true,"dfaEnabled":true,"editorialSystem":"stoa","reportingPortfolio":"Springer Hybrid","inReviewEnabled":true,"inReviewRevisionsEnabled":false}}],"origin":"","ownerIdentity":"6023b3ba-30a4-48ac-8715-9a6859782cd3","owner":[],"postedDate":"May 18th, 2026","published":true,"recentEditorialEvents":[{"type":"editorInvitedReview","content":"","date":"2026-05-19T07:34:51+00:00","index":14,"fulltext":""},{"type":"reviewerAgreed","content":"167355754986376945105992436020739675411","date":"2026-05-11T01:29:25+00:00","index":13,"fulltext":""},{"type":"reviewersInvited","content":"3","date":"2026-05-07T12:46:15+00:00","index":"","fulltext":""}],"rejectedJournal":[],"revision":"","amendment":"","status":"under-review","subjectAreas":[],"tags":[],"updatedAt":"2026-05-18T06:42:36+00:00","versionOfRecord":[],"versionCreatedAt":"2026-05-18 06:42:36","video":"","vorDoi":"","vorDoiUrl":"","workflowStages":[]},"version":"v1","identity":"rs-9354687","journalConfig":"researchsquare"},"__N_SSP":true},"page":"/article/[identity]/[[...version]]","query":{"redirect":"/article/rs-9354687","identity":"rs-9354687","version":["v1"]},"buildId":"8U1c8b4HqxoKbykW_rLl7","isFallback":false,"isExperimentalCompile":false,"dynamicIds":[84888],"gssp":true,"scriptLoader":[]}