Role of Lateral Surface Conduction in Barrier Modulation of AlGaN/GaN HEMTs Under Optical Illumination and Elevated Temperature

Role of Lateral Surface Conduction in Barrier Modulation of AlGaN/GaN HEMTs Under Optical Illumination and Elevated Temperature | Authorea try { document.documentElement.classList.add('js'); } catch (e) { } var _gaq = _gaq || []; _gaq.push(['_setAccount', 'G-8VDV14Y67G']); _gaq.push(['_trackPageview']); (function() { var ga = document.createElement('script'); ga.type = 'text/javascript'; ga.async = true; ga.src = ('https:' == document.location.protocol ? 'https://ssl' : 'http://www') + '.google-analytics.com/ga.js'; var s = document.getElementsByTagName('script')[0]; s.parentNode.insertBefore(ga, s); })(); Skip to main content Preprints Collections Wiley Open Research IET Open Research Ecological Society of Japan All Collections About About Authorea FAQs Contact Us Quick Search anywhere Search for preprint articles, keywords, etc. Search Search ADVANCED SEARCH SCROLL This is a preprint and has not been peer reviewed. Data may be preliminary. 10 April 2026 V1 Latest version Share on Role of Lateral Surface Conduction in Barrier Modulation of AlGaN/GaN HEMTs Under Optical Illumination and Elevated Temperature Authors : Umang Singh 0009-0002-5466-8666 [email protected] , Soumyadip Chatterjee , Ritam Sarkar , and Apurba Laha Authors Info & Affiliations https://doi.org/10.22541/au.177584964.41436781/v1 147 views 66 downloads Contents Abstract Supplementary Material Information & Authors Metrics & Citations View Options References Figures Tables Media Share Abstract Optical and thermal excitation are known to enhance OFF-state leakage and modify the electrostatics of AlGaN/GaN high-electron-mobility transistors (HEMTs), yet the underlying transport pathway remains insufficiently understood. In this work, a geometry-defined ring-break architecture is introduced to directly probe lateral surface conduction and its role in barrier modulation. Simultaneous measurements of gate leakage current I G and channel potential Va reveal a gate-bias-dependent regime transition characterized by a correlated collapse of surface current and electrostatic modulation beyond a critical electric field. The identical transition behavior observed in both transport and electrostatic responses establishes that this transition is governed by a field-defined stability condition of the lateral surface conduction pathway. Measurements on conventional device geometries exhibit the same transition behavior under optical and thermal conditions, confirming the generality of the mechanism. While the magnitude of Va modulation differs significantly between the two geometries, this variation is attributed to differences in the spatial extent of surface charge redistribution and electrostatic boundary conditions rather than changes in the underlying transport process. These results demonstrate that optically and thermally induced barrier modulation in AlGaN/GaN HEMTs is governed by field-sustained lateral surface conduction mediated by surface trap dynamics. Supplementary Material File (field_assisted_surface_leakage_causing_optically_and_thermally_induced_barrier_lowering (19).pdf) Download 3.92 MB Information & Authors Information Version history V1 Version 1 10 April 2026 Copyright This work is licensed under a Creative Commons Attribution 4.0 International License Keywords algan/gan hemts gate leakage lateral surface conduction potential reliability surface trap states Authors Affiliations Umang Singh 0009-0002-5466-8666 [email protected] Department of Electrical Engineering, IIT Bombay Department of Electrical Engineering, IIT Bombay, India. Currently, he is with IMEC View all articles by this author Soumyadip Chatterjee Department of Electrical Engineering, IIT Bombay Department of Electrical Engineering, IIT Bombay, India. Currently, he is with IMEC View all articles by this author Ritam Sarkar Department of Electrical Engineering, IIT Bombay View all articles by this author Apurba Laha Department of Electrical Engineering, IIT Bombay Department of Electrical Engineering, IIT Bombay, India. Currently, he is with IMEC View all articles by this author Metrics & Citations Metrics Article Usage 147 views 66 downloads .FvxKWukQNSOunydq8rnd { width: 100px; } Citations Download citation Umang Singh, Soumyadip Chatterjee, Ritam Sarkar, et al. Role of Lateral Surface Conduction in Barrier Modulation of AlGaN/GaN HEMTs Under Optical Illumination and Elevated Temperature. Authorea . 10 April 2026. DOI: https://doi.org/10.22541/au.177584964.41436781/v1 If you have the appropriate software installed, you can download article citation data to the citation manager of your choice. Simply select your manager software from the list below and click Download. 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