Study on Electronic Transport and Optoelectronic Properties of Semiconductor 2D Ge₂Y₂ (Y = As, P, N)

Study on Electronic Transport and Optoelectronic Properties of Semiconductor 2D Ge₂Y₂ (Y = As, P, N) | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Article Study on Electronic Transport and Optoelectronic Properties of Semiconductor 2D Ge₂Y₂ (Y = As, P, N) Jiabao Liao, Nan Fei, Shujin Guo, Yipeng An, Guoping Zhao This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-5364646/v1 This work is licensed under a CC BY 4.0 License Status: Published Journal Publication published 29 Apr, 2025 Read the published version in Scientific Reports → Version 1 posted 10 You are reading this latest preprint version Abstract Several conceptual nanodevices based on the four-atom-layer α - and β -Ge 2 Y 2 are constructed, and their electronic transport and photoelectronic properties are revealed by means of first-principles calculations. Our results demonstrate that the Ge 2 Y 2 -based p-n junction diodes show a great rectifying effect with high rectification ratio. Their p-i-n junction transistors show a field-effect behavior with better rectifying effect and stronger electronical anisotropy. Moreover, the Ge 2 Y 2 monolayers have strong photoelectronic response in the visible light region, displaying excellent photoelectronic properties in the photovoltaic materials and photoelectronic transistors. Our findings uncover the multi-functional features of four-atom-layer Ge 2 Y 2 monolayers, promising their extensive applications as candidates for future flexible semiconductor devices. Physical sciences/Physics/Condensed matter physics/Electronic properties and materials Physical sciences/Physics/Condensed matter physics/Semiconductors Two-dimensional materials Ge2Y2 monolayers Nanodevices Transport properties Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 1. Introduction Since the discovery and successful mechanical exfoliation of graphene in 2004, there has been a surge in research on 2D materials 1 , 2 . Many 2D materials have since been predicted and experimentally synthesized, such as transition metal dichalcogenides 3 – 7 , borophene 8 – 14 , phosphorene 15 , 16 , and MA₂Z₄ family materials 17 , 18 , revealing novel physical and chemical properties as well as promising applications. Compared to bulk materials, 2D materials exhibit unique structures that confer new electronic and optoelectronic properties. Their thermoelectric transport is confined to a single plane, which makes them suitable for applications in electronics, optoelectronics, spintronics, sensors, and field-effect transistors. Studies have found that 2D semiconductor materials possess many excellent functional properties, including rectification effects, gate behavior, and spin filtering effects, which can be utilized in developing next-generation nanoelectronic devices 19 – 21 . In semiconductor device applications, corrugated 2D materials 22 such as arsenene, monolayer SnSb, and monolayer GeSe have multiple advantages over planar 2D materials: wide adjustable bandgaps 23 , in-plane anisotropy 24 , high carrier mobility 23 , and high rectification ratios 22 , 23 , 25 . Additionally, 4-atomic-layer corrugated 2D materials exhibit higher stability and more diverse phases than their 2-atomic-layer counterparts 26 . For example, IV-V group X₂Y₂ type 2D materials have lower formation energies than XY type materials 27 – 32 . Barreteau et al. successfully constructed layered SiP, SiAs, GeP, and GeAs with monoclinic crystal structures in the C2/m space group 33 – 35 . Based on this, Lou et al. proposed stable Ge₂Y₂ structures and studied their thermal transport and thermoelectric properties, indicating promising applications in thermoelectric devices 27 . Despite these advancements, the effects and electronic transport properties in different device architectures remain to be explored. Key aspects to be thoroughly investigated include: (a) the degree of anisotropy in electronic transport, (b) their potential to function as field-effect transistors (FETs), and (c) their optoelectronic properties. IV-V group Ge₂Y₂ materials exhibit excellent kinetic stability with two stable structural phases, α -Ge₂Y₂ and β -Ge₂Y₂, both showing semiconductor properties 27 . In this paper, we design and study conceptual nano-device structures based on monolayers of α - and β -Ge₂Y₂ (Y = As, P, N), such as p - n junction diodes, p - i - n junction field-effect transistors, and phototransistors. We calculate their electronic and optoelectronic transport properties using first-principles methods, revealing their functional characteristics and potential applications in next-generation high-performance electronic devices. 2. Computational Results and Discussion 2.1 Electronic Structure of Ge₂Y₂ Monolayers The ground-state crystal structures of fully relaxed Ge₂Y₂ (Y = As, P, N) monolayers are shown in Fig. 1 (a) and (b). Each Ge₂Y₂ unit cell contains 4 atoms: 2 Ge atoms and 2 Y atoms. The α - and β -Ge₂Y₂ monolayers consist of two Ge-Y layers connected by Ge-Ge bonds, forming AA and AB stacking. Ge and Y atoms are arranged in hexagonal honeycomb lattices, forming two structures: α -Ge₂Y₂ monolayers(see Fig. 1 (a)) correspond to the 2D crystal space groups [ \(P\bar {6}m2\) ](No. 187), while β -Ge₂Y₂ monolayers(see Fig. 1 (b)) correspond to the [ \(P\bar {3}m1\) ](No. 164). Based on total energy calculations from spin-polarized and non-polarized approaches, α -Ge₂Y₂ and β -Ge₂Y₂ monolayers exhibit non-magnetic ground states, consistent with recent reports 26 , 30 . Table 1 lists the lattice parameters of Ge₂Y₂ (Y = As, P, N) monolayers and previously reported values. The lattice constants of α - and β -Ge₂As₂ monolayers are a = 3.800 Å and a = 3.815 Å, respectively, consistent with prior data 27 . Our results also indicate that the lattice constants of Ge₂Y₂ (Y = As, P, N) monolayers decrease as the atomic radius of element Y decreases from As to N. Table 1 Crystal Structure Parameters and Band Gaps of α - and β -Ge 2 Y 2 Monolayers. Lattice(Å) a Band length(Å) Stacking type Space group Bandgap(eV) L Ge−Ge L Ge−Y α -Ge 2 As 2 3.821 2.500 2.488 AA P 6m2 (No. 187) 1.06(indirect) 27 β -Ge 2 As 2 3.831 2.483 2.490 AB P −3m1 (No. 164) 1.01(indirect) 27 α -Ge 2 As 2 3.800 2.539 2.479 AA P 6m2 (No. 187) 1.08(indirect) β -Ge 2 As 2 3.815 2.416 2.410 AB P −3m1 (No. 164) 0.92(indirect) α -Ge 2 P 2 3.660 2.507 2.370 AA P 6m2 (No. 187) 1.33(indirect) 27 β -Ge 2 P 2 3.672 2.490 2.373 AB P −3m1 (No. 164) 1.19(indirect) 27 α -Ge 2 P 2 3.651 2.497 2.362 AA P 6m2 (No. 187) 1.14(indirect) β -Ge 2 P 2 3.661 2.480 2.365 AB P −3m1 (No. 164) 0.94(indirect) α -Ge 2 N 2 3.095 2.600 1.909 AA P 6m2 (No. 187) 1.21(indirect) 27 β -Ge 2 N 2 3.100 2.544 1.909 AB P −3m1 (No. 164) 1.12(indirect) 27 α -Ge 2 N 2 3.104 2.551 1.915 AA P 6m2 (No. 187) 1.14(indirect) β -Ge 2 N 2 3.116 2.533 1.918 AB P −3m1 (No. 164) 0.94(indirect) Figure 1 (c) is the electronic band structure diagram of the Ge 2 As 2 monolayers, from which it can be directly observed that the Ge 2 As 2 monolayers are indirect bandgap semiconductors. For the α -Ge 2 As 2 monolayer, the conduction band minimum is located near the M point, and the valence band maximum is at the Γ point. The effective mass of holes at the valence band maximum along the x - and y -axis is 2.413 (2.412) m e , and the effective mass of electrons at the conduction band minimum along the x - and y -axis is 0.2446 (0.5609) m e . The Fermi velocities at the M point of the conduction band minimum along the x - and y -axis are 1.87×10 5 and 7.81×10 4 m/s, respectively. The β -Ge 2 As 2 monolayer exhibits similar characteristics; the effective mass of electrons at the conduction band minimum (and holes at the valence band maximum) is 0.275 (2.185) m e , with Fermi velocities at the M point of the conduction band minimum along the x - and y -axis being 2.10×10 5 and 4.01×10 4 m/s, respectively, demonstrating significant anisotropy. However, the α phase of the Ge 2 As 2 monolayer displays more pronounced anisotropy compared to the β phase. Figures 2 (a) and (b) represent the band structure diagrams for the Ge 2 P 2 and Ge 2 N 2 monolayers, respectively. Both the Ge 2 P 2 and Ge 2 N 2 monolayers are indirect bandgap semiconductors. Like the Ge 2 As 2 monolayers, the Ge 2 P 2 monolayers has its conduction band minimum at the M point and its valence band maximum at the Γ point. However, the Ge 2 N 2 monolayers has its conduction band minimum at the Γ point, with its valence band maximum located between the Γ point and the M point. Additionally, energy dispersion exhibits anisotropy away from the Γ point, like many two-dimensional materials, showing anisotropic transport properties in both the x and y directions 36 . The specific Fermi velocities of other materials in the Ge 2 Y 2 family are listed in Table 2 , among which the Fermi velocity of the Ge 2 P 2 monolayers is close to that of silicene. Table 2 Fermi Velocities of α - and β -Ge 2 Y 2 Monolayers. Fermi velocity (m/s) Conduction band minimum Valence band maximum x -axis y -axis x -axis y -axis α -Ge 2 As 2 1.87×10 5 7.81×10 4 1.38×10 5 4.72×10 1 β -Ge 2 As 2 2.10×10 5 4.01×10 4 6.52×10 3 3.54×10 − 9 α -Ge 2 P 2 1.98×10 5 8.32×10 4 1.77×10 4 3.81×10 − 1 β -Ge 2 P 2 2.15×10 5 3.72×10 4 1.31×10 4 5.76×10 − 9 α -Ge 2 N 2 6.96×10 3 5.23×10 3 9.10×10 3 1.00×10 − 1 β -Ge 2 N 2 6.54×10 3 5.06×10 3 9.53×10 3 3.79×10 − 3 The structural stability of Ge 2 Y 2 (Y = As, P, N) monolayers has been previously studied and calculated. Results indicate that the phonon spectra of all six Ge 2 Y 2 structures exhibit no imaginary frequencies throughout the entire Brillouin zone, demonstrating that Ge 2 Y 2 monolayers are dynamically stable in equilibrium 27 . Due to the high sensitivity of two-dimensional nanomaterials to structural defects, stress and strain can significantly alter their electronic properties. Here, we focus on Ge 2 Y 2 monolayers and study the impact of different types of strain on their band structures. Uniaxial and biaxial strains are applied along the x and y directions (corresponding to hexagonal lattice vectors a and b ), denoted as ε x , ε y , and ε xy , within a strain range of − 5–5%. Strain is defined as: ε x = ( a − a 0 )/ a 0 and ε y = ( b − b 0 )/ b 0 , where a ( b ) and a 0 ( b 0 ) are the lattice constants of the strained and unstrained structures, respectively. Tensile (compressive) strain is represented by positive (negative) values. Figures 1 (d), 2(c), and 2(d) respectively illustrate the variations in bandgap of Ge 2 As 2 , Ge 2 P 2 and Ge 2 N 2 monolayers under different strains. Calculations indicate that within the strain range of − 5–5%, the semiconductor properties of the Ge 2 Y 2 monolayers remain unchanged. As shown in Fig. 1 (d), when tensile strain is applied in the range of 0–5% along the uniaxial x and biaxial xy directions, the bandgap of the strained Ge 2 As 2 monolayers first increases, reaching a maximum at 3% strain, and then decreases. However, applying strain along the uniaxial y direction slightly reduces the bandgap. This demonstrates the dependency of the bandgap on compressive and tensile strains. 2.2 Constructing Ge 2 Y 2 Monolayers p - n Junction Diodes The p - n junction diodes of α -Ge 2 Y 2 and β -Ge 2 Y 2 monolayers (Fig. 3 (a)) achieve p -type and n -type doping using the virtual crystal approximation method 37 – 41 . The chosen doping method is electrostatic doping by atomic compensation charge, widely used for simulating various nanodevices 42 . Each diode consists of drain (D) and source (S) probes and a central scattering p - n junction. The D/S probes are simulated by semi-infinite p and n -doped supercells along the transport direction. When a forward D-S bias V b is applied, a positive current flows from D to S, and vice versa. The current through the α -Ge 2 Y 2 and β -Ge 2 Y 2 monolayers p - n junction diodes is determined as: $$I\left( {{V_b}} \right)=\frac{{2e}}{h}\int {_{{ - \infty }}^{\infty }T\left( {E,{V_b}} \right)} \left[ {{f_D}\left( {E - {\mu _D}} \right) - {f_S}\left( {E - {\mu _S}} \right)} \right]dE$$ 1 The Fermi-Dirac distribution function of the D(S) electrode is: $${f_{D\left( S \right)}}={\left\{ {1+exp\left[ {{{\left( {E - {\mu _{D\left( S \right)}}} \right)} \mathord{\left/ {\vphantom {{\left( {E - {\mu _{D\left( S \right)}}} \right)} {{k_B}{T_{D\left( S \right)}}}}} \right. \kern-0pt} {{k_B}{T_{D\left( S \right)}}}}} \right]} \right\}^{ - 1}}$$ 2 Here, \({\mu _{D\left( S \right)}}\) and \({T_{D\left( S \right)}}\) represent the chemical potential and electron temperature, respectively. In this work, the bias voltage ranges from − 0.5 to 0.5 V with a sampling interval of 0.1 V. The paper primarily discusses the β -Ge 2 Y 2 monolayers p - n junction diodes, with the results for the β -Ge 2 Y 2 monolayers provided in the supplementary materials (FIG. S1 ). The current-voltage (I-V) curves of the α -Ge 2 As 2 monolayer p - n junction diode (Fig. 3 (b)) demonstrate a strong rectification effect in both Z-type and A-type configurations. Under a reverse bias of -0.5 V, the total current of the Z-type and A-type p - n junction diodes of the α -Ge 2 As 2 monolayer are 205.85 and 324.16 mA/mm, respectively (Fig. 3 (b)), showing electrical anisotropy with a ratio of 0.64. Figure 3 (c) demonstrates the strong rectification effect of the p - n junction diodes along the zigzag and armchair directions: both have a rectification ratio RR = I(- V b )/I( V b ) as high as 10 5 . Other monolayers p - n junction diodes in the Ge 2 Y 2 family exhibit similar behavior. For α-Ge 2 P 2 , the total currents for Z-type and A-type p - n junction diodes at a reverse bias of -0.5 V are 1.45 and 1.91 mA/mm, respectively (Fig. 3 (d)), with an electrical anisotropy ratio of 0.75. Similarly, for α -Ge 2 N 2 , the total currents for Z-type and A-type p - n junction diodes at a reverse bias of -0.5 V are 225.64 and 187.41 µA/mm, with an electrical anisotropy ratio of 1.20(Fig. 3 (f)). As illustrated in Fig. 3 (e) and 3(g), the monolayers of α -Ge 2 P 2 and α -Ge 2 N 2 both exhibit good rectification effects. For the α -Ge 2 P 2 monolayers, the A-type device shows better rectification than the Z-type. Similarly to the α -Ge 2 As 2 monolayers, the Z-type device of the α -Ge 2 N 2 monolayer has a better rectification effect. These properties suggest that Ge 2 Y 2 monolayers p - n junction diodes have potential applications in rectifiers. 2.3 Ge 2 Y 2 Monolayers p - i - n Junction Field-Effect Transistors A vertical electric field can also enhance device transport performance. Therefore, the field-effect characteristics of p - i - n junction field-effect transistors (FETs) based on monolayers Ge 2 Y 2 (Y = As, P, N) were studied, as shown in Fig. 4 (a). The FET consists of two side electrodes and a middle intrinsic scattering region. The side electrodes are made of p -doped and n -doped Ge 2 Y 2 monolayers. The approximately 3 nm middle intrinsic region ( i ) is composed of intrinsic Ge 2 Y 2 monolayers, serving as the FET channel, and is covered by top and bottom gates spanning the entire intrinsic region. The current through the p - i - n junction FET is determined using the Eq. 4 3 : $$I({V_b},{V_g})=\frac{{2e}}{h}f_{{ - \infty }}^{\infty }T(E,{V_b},{V_g})\left[ {{f_D}(E - {\mu _D}) - {f_S}(E - {\mu _S})} \right]dE$$ 3 Figure 6. Transport characteristics of p - i - n junction field-effect transistor (FET) based on α -Ge 2 N 2 monolayer at different gate voltages. I-V curves (a) and rectification ratio curves (b) of α -Ge 2 N 2 monolayer p - i - n junction FET at gate voltages of 0, 5, and 10 V. The p - i - n junction FETs based on Ge 2 P 2 and Ge 2 N 2 monolayers also exhibit similar device characteristics to their corresponding p - n junction diodes and show equally excellent field-effect behaviors as the p - i - n junction FETs based on α -Ge 2 As 2 monolayers, as shown in Figs. 5 (a) and 6(a). It is noted that, when a positive gate voltage is applied, the threshold voltage of the Z-type p - i - n junction FETs based on Ge 2 Y 2 is significantly lower than that of the A-type. As the gate voltage increases, the current density also increases significantly, demonstrating field-effect behavior. Figures 5 (b) and 6(b) show the rectification ratio curves of the p - i - n junction FETs based on Ge 2 P 2 and Ge 2 N 2 monolayers at different gate voltages. As the gate voltage increases, the rectification ratio increases by at least two orders of magnitude, and in some cases, by up to five orders of magnitude, particularly for Z-type Ge 2 P 2 and A-type Ge 2 N 2 p - i - n junction FETs at -0.5 V, where the rectification ratio reaches 10 9 . The β -Ge 2 Y 2 monolayers p - i - n field-effect transistors also exhibit similarly good gate control behavior, with the specific results shown in Supplementary FIG. S2, S3, and S4. These highly tunable transistor characteristics of monolayer Ge 2 Y 2 monolayers p - i - n junctions make them not only ideal materials for efficient current modulation but also promising candidates for the development of next-generation nanoscale field-effect transistor devices. 2.4 Study on the Optoelectronic Properties of Ge 2 Y 2 Monolayers We further explored the potential applications of α -Ge 2 Y 2 and β -Ge 2 Y 2 monolayers in optoelectronics, Z-type and A-type p - i - n junction phototransistors based on Ge 2 Y 2 monolayers were designed and investigated their photocurrent transport properties under illumination. Results for the β -Ge 2 Y 2 monolayers are presented in the supplementary materials FIG. S5. Figure 7 (a) is a schematic diagram of the p - i - n junction phototransistors in the Ge 2 Y 2 monolayers. In the simulated photoelectric transport process presented in this paper, the incident light is linearly polarized, with the photon energy range set from 1.6 to 3.2 eV, which corresponds to the visible light range. Specifically, the photocurrent injected into the electrode α can be determined by 44 , 45 : $$\:{J}_{\text{D}}^{\left(ph\right)}=\frac{ie}{h}\int\:Tr\left\{{\varGamma\:}_{m}\left[{G}_{ph}^{}-{G}_{ph}^{<})\right]\right\}d\epsilon\:$$ 4 where \(\:m\:(\text{D},\text{S})\) denotes the electrode, \(\:{\varGamma\:}_{m}=i\left({\sum\:}_{m}^{r}-{\sum\:}_{m}^{a}\right)\) denotes the coupling of the central area with the electrode \(\:m\) . \(\:{G}_{ph}^{}={G}_{0}^{r}{\sum\:}_{ph}^{}{G}_{0}^{a}\) denotes the lesser (greater) Green’s function of the central area; \(\:{\sum\:}_{ph}^{}\) is the self-energy of electrodes with the electron–photon interaction 46 , which includes the information about the polarization of the polarized light of a complex vector \(\:e\) ; \(\:{f}_{a}\left(\epsilon\:\right)\) represents the Fermi–Dirac distribution function to the electrode \(\:m\) . The normalized photocurrent can be denoted by the following photoresponse function 47 , 48 : $$\:I={J}_{\text{D}}^{\left(ph\right)}/\text{e}{I}_{{\omega\:}}$$ 5 where \(\:{I}_{{\omega\:}}\) is the photon flux. Under zero bias (no power supply), We then give, in Figs. 7 (b), (c)and (d), the photocurrent ( I ) for different photon energies in the α -Ge 2 As 2 , α -Ge 2 P 2 and α -Ge 2 N 2 monolayers p - i - n junction phototransistors. This indicates that in the higher photon energy range of 2.6 to 3.2 eV, the photocurrent ( I ) in the Z-type for the α -Ge 2 As 2 and α -Ge 2 P 2 monolayers is significantly greater than that in the A-type. Additionally, the Ge 2 Y 2 monolayer p - i - n junction phototransistor exhibits weaker anisotropic optoelectronic characteristics. The photocurrent of the α -Ge 2 As 2 and α -Ge 2 P 2 monolayers p - i - n junction phototransistors reach the maximum of 3.49 and 3.12 respectively at 3.2 eV, suggests that they have potential applications in optoelectronic devices within the visible light range, particularly in the violet light spectrum. The α -Ge 2 N 2 monolayer p - i - n junction phototransistor exhibits a stronger photoelectric response to yellow-green light in the visible spectrum, with its Z-type device achieving a maximum photocurrent of 4.63 at 2.2 eV. These values correspond to different regions of visible light, suggesting their potential applications in photodetectors for various visible light spectra. Additionally, the β -Ge 2 Y 2 monolayers p - i - n junction phototransistors also exhibit good optoelectronic response and anisotropy, with specific results shown in the supplementary materials. These excellent optoelectronic properties make Ge 2 Y 2 monolayers promising materials for photovoltaic devices and photodetectors. 3. Conclusion In this study, we employed the first-principles calculations based on Density functional theory (DFT) to design conceptual nanodevices based on Ge 2 Y 2 (Y = As, P, N) monolayers and investigated their electronic, transport, and optoelectronic properties. The results indicate that Ge 2 Y 2 semiconductors with indirect bandgaps ranging from 0.92 to 1.14 eV exhibit good dynamic stability and significant mechanical anisotropy. The electronic properties of Ge 2 Y 2 monolayers are highly sensitive to applied uniaxial and biaxial strains, with strain predicted to be an effective method for tuning bandgaps. Both Z-type and A-type Ge 2 Y 2 monolayers p - n junction diodes demonstrate strong rectification effects, with ultra-high rectification ratios (up to 10 5 for Ge 2 As 2 ), high current densities (up to 324.16 mA/mm for Ge 2 As 2 ), significant electrical anisotropy, and high current anisotropy ratios (1.20 for Ge 2 N 2 ). Field-effect transistors based on Ge 2 Y 2 monolayers exhibit perfect rectification effects and strong electrical anisotropy similar to p - n junction diodes. Additionally, gate voltage can effectively modulate the current of field-effect transistors. Ge 2 Y 2 monolayers and their phototransistors also show excellent photoresponse in the visible regions. The different device performances from As to N in Ge 2 Y 2 monolayers highlight their potential applications in functional electronic and optoelectronic devices. Due to their indirect and strain-tunable bandgaps, and excellent electronic transport and optoelectronic properties, Ge 2 Y 2 monolayers materials are promising candidates for applications in nano-devices and optoelectronic devices. 4. Computational Methods The electronic structure and transport properties of 2D Ge₂Y₂ monolayers were studied using density functional theory 49 – 51 combined with the nonequilibrium Green's function method 52 – 55 . Calculations were performed using the Hongzhiwei Nanodcal software 56 , 57 . Electron interactions were treated with the generalized gradient approximation 58 , 59 , and the atomic nuclei were described by optimized norm-conserving pseudopotentials 60 . During structural optimization, the total energy and forces on each atom were converged to less than 10⁻⁶ eV and 10⁻⁴ eV/Å, respectively. To ensure sufficient accuracy and computational efficiency, a cutoff energy of 100 Ha and a 1×8×8 Monkhorst-Pack k -points grid were used for Brillouin zone sampling and structural optimization. To avoid interactions between adjacent layers, a vacuum space of approximately 25 Å was added in the vertical direction of the 2D surface. For electronic transport calculations, the Brillouin zones of the left and right electrodes of armchair (A-type) and zigzag (Z-type) Ge₂Y₂ monolayer devices were sampled with 1×7×280 and 1×4×300 k -points grids, respectively. Declarations Author Contribution J.L. was responsible for the main work of device design and theoretical calculations, and reviewed the final version of the article.J.L. and N.F. jointly processed and analyzed the computational data and created the relevant figures.J.L. and G.Z. co-wrote the main manuscript text, provided support for the theoretical framework, and conducted in-depth discussions and revisions of the theoretical parts of the manuscript.Y.A. reviewed and edited the materials and methods section of the manuscript.S.G. primarily conducted the review of the paper,.All authors participated in the discussion of the article, and reviewed the final manuscript. We confirm that all authors agree to submit this article and are responsible for its content. Acknowledgments *G.Z. acknowledges the support from the National Natural Science Foundation of China (Grant Nos. 12474122, 52171188, 51771127 and 52111530143) and the Central Government Funds of Guiding Local Scientific and Technological Development for Sichuan Province (No. 2021ZYD0025). This work was also supported by the National Natural Science Foundation of China (Grant No. 12274117), the Program for Innovative Research Team (in Science and Technology) in University of Henan Province (Grant No. 24IRTSTHN025), the Natural Science Foundation of Henan Province (Grant No. 242300421214). Data Availability The data that support the findings of this study are available from the corresponding authors upon reasonable request. References Novoselov, K. S. et al. Electric field effect in atomically thin carbon films. Science 306 , 666-669, doi:doi:10.1126/science.1102896 (2004). Gong, C. et al. Discovery of intrinsic ferromagnetism in two-dimensional van der Waals crystals. Nature 546 , 265-269, doi:10.1038/nature22060 (2017). Ataca, C., Şahin, H. & Ciraci, S. Stable, single-layer MX 2 transition-metal oxides and dichalcogenides in a honeycomb-like structure. J. Phys. Chem. C 116 , 8983-8999, doi:10.1021/jp212558p (2012). An, M. & Dong, S. Ferroic orders in two-dimensional transition/rare-earth metal halides. APL Mater. 8 , doi:10.1063/5.0031870 (2020). Du, Y., Yang, L., Liu, H. & Ye, P. D. Contact research strategy for emerging molybdenum disulfide and other two-dimensional field-effect transistors. APL Mater. 2 , doi:10.1063/1.4894198 (2014). Li, G., Yao, K. & Gao, G. Strain-induced enhancement of thermoelectric performance of TiS 2 monolayer based on first-principles phonon and electron band structures. Nanotechnol. 29 , doi:10.1088/1361-6528/aa99ba (2018). Mak, K. F. & Shan, J. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides. Nat. Photonics 10 , 216-226, doi:10.1038/nphoton.2015.282 (2016). An, Y. et al. Unveiling the electric-current-limiting and photodetection effect in two-dimensional hydrogenated borophene. Phys. Rev. Appl. 11 , 064031, doi:10.1103/PhysRevApplied.11.064031 (2019). An, Y. et al. How does the electric current propagate through fully-hydrogenated borophene? Phys. Chem. Chem. Phys. 20 , 21552-21556, doi:10.1039/c8cp04272a (2018). An, Y. et al. Negative differential conductance effect and electrical anisotropy of 2D ZrB 2 monolayers. J. Phys.: Condens.Matter 31 , doi:10.1088/1361-648X/aaf5b2 (2019). Feng, B. et al. Experimental realization of two-dimensional boron sheets. Nat. Chem. 8 , 563-568, doi:10.1038/nchem.2491 (2016). Mannix, A. J. et al. Synthesis of borophenes: Anisotropic, two-dimensional boron polymorphs. 350 , 1513-1516, doi:doi:10.1126/science.aad1080 (2015). Arcudia, J., Kempt, R., Cifuentes-Quintal, M. E., Heine, T. & Merino, G. Blue phosphorene bilayer is a two-dimensional metal and an unambiguous classification scheme for buckled hexagonal bilayers. Phys. Rev. Lett. 125 , 196401, doi:10.1103/PhysRevLett.125.196401 (2020). Jiang, Z., Wang, P., Jiang, X. & Zhao, J. MBene (MnB): a new type of 2D metallic ferromagnet with high Curie temperature. Nanoscale Horiz. 3 , 335-341, doi:10.1039/c7nh00197e (2018). Sibari, A., Kerrami, Z., Kara, A. & Benaissa, M. Strain-engineered p-type to n-type transition in mono-, bi-, and tri-layer black phosphorene. J. Appl. Phys. 127 , doi:10.1063/1.5140360 (2020). Jin, Z., Mullen, J. T. & Kim, K. W. Highly anisotropic electronic transport properties of monolayer and bilayer phosphorene from first principles. Appl. Phys. Lett. 109 , doi:10.1063/1.4960526 (2016). An, Y. et al. Nanodevices engineering and spin transport properties of MnBi 2 Te 4 monolayer. npj Comput. Mater. 7 , 45, doi:10.1038/s41524-021-00513-9 (2021). Gao, Y. et al. Electronic transport properties and nanodevice designs for monolayer MoSi 2 P 4 . Phys. Rev. Appl. 18 , 034033, doi:10.1103/PhysRevApplied.18.034033 (2022). Pan, Y. et al. Sub-5-nm Monolayer silicane transistor: A first-principles quantum transport simulation. Phys. Rev. Appl. 14 , 024016, doi:10.1103/PhysRevApplied.14.024016 (2020). Sebastian, A., Pendurthi, R., Choudhury, T. H., Redwing, J. M. & Das, S. Benchmarking monolayer MoS 2 and WS 2 field-effect transistors. Nat. Commun. 12 , 693, doi:10.1038/s41467-020-20732-w (2021). Lv, L. et al. Reconfigurable two-dimensional optoelectronic devices enabled by local ferroelectric polarization. Nat. Commun. 10 , 3331, doi:10.1038/s41467-019-11328-0 (2019). Meng, Y.-X., Zhao, Y.-F. & Li, S.-C. Research progress of puckered honeycomb monolayers. Acta Phys. Sin. 70 , doi:10.7498/aps.70.20210638 (2021). Chen, W., Gui, X., Yang, L., Zhu, H. & Tang, Z. Wrinkling of two-dimensional materials: methods, properties and applications. Nanoscale Horiz. 4 , 291-320, doi:10.1039/c8nh00112j (2019). Qu, H., Guo, S., Zhou, W. & Zhang, S. Uncovering the anisotropic electronic structure of 2D group VA-VA monolayers for quantum transport. IEEE Electron Device Lett. 42 , 66-69, doi:10.1109/led.2020.3041657 (2021). Cai, Y., Zhang, A., Ping Feng, Y. & Zhang, C. Switching and rectification of a single light-sensitive diarylethene molecule sandwiched between graphene nanoribbons. J. Chem. Phys. 135 , doi:10.1063/1.3657435 (2011). Lin, W., Liang, S.-D., Li, J. & Yao, D.-X. Phonon dispersions and electronic structures of two-dimensional IV-V compounds. Carbon 172 , 345-352, doi:https://doi.org/10.1016/j.carbon.2020.10.043 (2021). Lou, A., Liu, Q.-B. & Fu, H.-H. Enhanced thermoelectric performance by lone-pair electrons and bond anharmonicity in the two-dimensional Ge 2 Y 2 family of materials with Y=N, P, As, or Sb. Phys. Rev. B 105 , 075431, doi:10.1103/PhysRevB.105.075431 (2022). Dong, Y., Zhang, C., Meng, M., Groves, M. M. & Lin, J. Novel two-dimensional diamond like carbon nitrides with extraordinary elasticity and thermal conductivity. Carbon 138 , 319-324, doi:https://doi.org/10.1016/j.carbon.2018.06.016 (2018). Bafekry, A., Yagmurcukardes, M., Akgenc, B., Ghergherehchi, M. & Mortazavi, B. First-principles investigation of electronic, mechanical and thermoelectric properties of graphene-like XBi (X = Si, Ge, Sn) monolayers. Phys. Chem. Chem. Phys. 23 , 12471-12478, doi:10.1039/d1cp01183a (2021). Niasadegh, N., Naseri, M. & Rezaee, S. Structural, electronic and optical properties of GeX (X = N, P and As) monolayer: under stress and strain conditions. Opt. Quantum Electron. 53 , 502, doi:10.1007/s11082-021-03134-0 (2021). Özdamar, B. et al. Structural, vibrational, and electronic properties of single-layer hexagonal crystals of group IV and V elements. Phys. Rev. B 98 , 045431, doi:10.1103/PhysRevB.98.045431 (2018). Ghobadi, N. & Touski, S. B. Structural, electrical and optical properties of bilayer SiX (X = N, P, As and Sb). J. Phys.: Condens.Matter 33 , doi:10.1088/1361-648X/abfdf0 (2021). Jung, C. S. et al. Two-dimensional GeAs with a visible range band gap. J. Mater. Chem. A 6 , 9089-9098, doi:10.1039/c8ta02676a (2018). Li, H. et al. Experimental Realization and Phase Engineering of a Two-Dimensional SnSb Binary Honeycomb Lattice. ACS. Nano. 15 , 16335-16343, doi:10.1021/acsnano.1c05583 (2021). Barreteau, C., Michon, B., Besnard, C. & Giannini, E. High-pressure melt growth and transport properties of SiP, SiAs, GeP, and GeAs 2D layered semiconductors. J. Cryst. Growth 443 , 75-80, doi:https://doi.org/10.1016/j.jcrysgro.2016.03.019 (2016). Motamarri, P. et al. DFT-FE – A massively parallel adaptive finite-element code for large-scale density functional theory calculations. Comput. Phys. Commun. 246 , 106853, doi:https://doi.org/10.1016/j.cpc.2019.07.016 (2020). Chen, X.-B. & Duan, W.-H. Quantum thermal transport and spin thermoelectrics in low-dimensional nano systems: application of nonequilibrium Green's function method. Acta Phys. Sin. 64 , 186302-186302, doi:10.7498/aps.64.186302 (2015). Taylor, J., Guo, H. & Wang, J. Ab initio modeling of open systems: Charge transfer, electron conduction, and molecular switching of a C 60 device. Phys. Rev. B 63 , 121104, doi:10.1103/PhysRevB.63.121104 (2001). Brandbyge, M., Mozos, J.-L., Ordejón, P., Taylor, J. & Stokbro, K. Density-functional method for nonequilibrium electron transport. Phys. Rev. B 65 , 165401, doi:10.1103/PhysRevB.65.165401 (2002). José, M. S. et al. The SIESTA method for ab initio order-N materials simulation. J. Phys.: Condens.Matter 14 , 2745, doi:10.1088/0953-8984/14/11/302 (2002). Perdew, J. P. et al. Atoms, molecules, solids, and surfaces: Applications of the generalized gradient approximation for exchange and correlation. Phys. Rev. B 46 , 6671-6687, doi:10.1103/PhysRevB.46.6671 (1992). Perdew, J. P., Burke, K. & Ernzerhof, M. Generalized gradient approximation made simple. Phys. Rev. Lett. 77 , 3865-3868, doi:10.1103/PhysRevLett.77.3865 (1996). Hamann, D. R. Erratum: Optimized norm-conserving vanderbilt pseudopotentials [Phys. Rev. B 88, 085117 (2013)]. Phys. Rev. B 95 , 239906, doi:10.1103/PhysRevB.95.239906 (2017). Chen, J., Hu, Y. & Guo, H. First-principles analysis of photocurrent in graphene PN junctions. Phys. Rev. B 85 , 155441, doi:10.1103/PhysRevB.85.155441 (2012). Zhang, L. et al. Generation and transport of valley-polarized current in transition-metal dichalcogenides. Phys. Rev. B 90 , 195428, doi:10.1103/PhysRevB.90.195428 (2014). Henrickson, L. E. Nonequilibrium photocurrent modeling in resonant tunneling photodetectors. J. Appl. Phys. 91 , 6273-6281, doi:10.1063/1.1473677 J Journal of Applied Physics (2002). Hübner, J. et al. Direct observation of optically injected spin-polarized currents in semiconductors. Phys. Rev. Lett. 90 , 216601, doi:10.1103/PhysRevLett.90.216601 (2003). Murakami, S., Nagaosa, N. & Zhang, S.-C. Dissipationless quantum spin current at room temperature. 301 , 1348-1351, doi:doi:10.1126/science.1087128 (2003). Wang, H. et al. Electrical transport properties of FeSe single crystal under high magnetic field. Sci. China: Phys., Mech. Astron. 64 , 287411, doi:10.1007/s11433-021-1702-4 (2021). Shukla, V., Grigoriev, A., Jena, N. K. & Ahuja, R. Strain controlled electronic and transport anisotropies in two-dimensional borophene sheets. Phys. Chem. Chem. Phys. 20 , 22952-22960, doi:10.1039/c8cp03815e (2018). Das, B. & Mahapatra, S. A predictive model for high-frequency operation of two-dimensional transistors from first-principles. J. Appl. Phys. 128 , doi:10.1063/5.0030633 (2020). Yang, Y.-Y., Gong, P., Ma, W.-D., Hao, R. & Fang, X.-Y. Effects of substitution of group-V atoms for carbon or silicon atoms on optical properties of silicon carbide nanotubes*. Chin. Phys. B 30 , 067803, doi:10.1088/1674-1056/abdb1e (2021). Palsgaard, M., Markussen, T., Gunst, T., Brandbyge, M. & Stokbro, K. Efficient first-principles calculation of phonon-assisted photocurrent in large-scale solar-cell devices. Phys. Rev. Appl. 10 , 014026, doi:10.1103/PhysRevApplied.10.014026 (2018). Palsgaard, M., Gunst, T., Markussen, T., Thygesen, K. S. & Brandbyge, M. Stacked janus device concepts: abrupt pn-junctions and cross-plane channels. Nano Lett. 18 , 7275-7281, doi:10.1021/acs.nanolett.8b03474 (2018). Das, B. & Mahapatra, S. An atom-to-circuit modeling approach to all-2D metal–insulator–semiconductor field-effect transistors. npj 2D Mater. Appl. 2 , 28, doi:10.1038/s41699-018-0073-3 (2018). Taylor, J., Guo, H. & Wang, J. Ab initio modeling of quantum transport properties of molecular electronic devices. Phys. Rev. B 63 , 245407, doi:10.1103/PhysRevB.63.245407 (2001). Waldron, D., Liu, L. & Guo, H. Ab initio simulation of magnetic tunnel junctions. Nanotechnol. 18 , 424026, doi:10.1088/0957-4484/18/42/424026 (2007). Stradi, D., Martinez, U., Blom, A., Brandbyge, M. & Stokbro, K. General atomistic approach for modeling metal-semiconductor interfaces using density functional theory and nonequilibrium Green's function. Phys. Rev. B 93 , 155302, doi:10.1103/PhysRevB.93.155302 (2016). Lee, I.-H. & Martin, R. M. Applications of the generalized-gradient approximation to atoms, clusters, and solids. Phys. Rev. B 56 , 7197-7205, doi:10.1103/PhysRevB.56.7197 (1997). Chai, L. Recent progress in density functional theory and its numerical methods. Prog. Chem. 17 , 192-202 (2005). Additional Declarations No competing interests reported. Supplementary Files Supplementarymaterials.pdf Cite Share Download PDF Status: Published Journal Publication published 29 Apr, 2025 Read the published version in Scientific Reports → Version 1 posted Editorial decision: Revision requested 11 Dec, 2024 Reviews received at journal 06 Dec, 2024 Reviews received at journal 05 Dec, 2024 Reviewers agreed at journal 25 Nov, 2024 Reviewers agreed at journal 21 Nov, 2024 Reviewers invited by journal 21 Nov, 2024 Editor assigned by journal 12 Nov, 2024 Editor invited by journal 12 Nov, 2024 Submission checks completed at journal 11 Nov, 2024 First submitted to journal 30 Oct, 2024 You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-5364646","acceptedTermsAndConditions":true,"allowDirectSubmit":false,"archivedVersions":[],"articleType":"Article","associatedPublications":[],"authors":[{"id":382335743,"identity":"6f11720e-0409-46ec-8393-c6198ee31e27","order_by":0,"name":"Jiabao Liao","email":"","orcid":"","institution":"Sichuan Normal University","correspondingAuthor":false,"prefix":"","firstName":"Jiabao","middleName":"","lastName":"Liao","suffix":""},{"id":382335744,"identity":"ca359cba-b5ce-4054-998d-db5f02556a79","order_by":1,"name":"Nan Fei","email":"","orcid":"","institution":"Sichuan Normal University","correspondingAuthor":false,"prefix":"","firstName":"Nan","middleName":"","lastName":"Fei","suffix":""},{"id":382335745,"identity":"58194b22-e177-46a6-9b25-89ff0314f4c7","order_by":2,"name":"Shujin Guo","email":"","orcid":"","institution":"Sichuan Normal University","correspondingAuthor":false,"prefix":"","firstName":"Shujin","middleName":"","lastName":"Guo","suffix":""},{"id":382335747,"identity":"ef5e55be-fc56-4f5b-990d-e74667c8bb4c","order_by":3,"name":"Yipeng An","email":"","orcid":"","institution":"Henan Normal University","correspondingAuthor":false,"prefix":"","firstName":"Yipeng","middleName":"","lastName":"An","suffix":""},{"id":382335748,"identity":"40d36551-b908-48ad-ad9f-56f74a0db4aa","order_by":4,"name":"Guoping Zhao","email":"data:image/png;base64,iVBORw0KGgoAAAANSUhEUgAAAZAAAAAyAQMAAABI0h/eAAAABlBMVEX///8AAABVwtN+AAAACXBIWXMAAA7EAAAOxAGVKw4bAAAA20lEQVRIiWNgGAWjYDACCTBpA+MyE60lDaaaeC2HSdAiP7v54cOvO84n9vOfP/iBocI6sYH97AG8WhjnHDM2lj1zO3HmjGRmCYYz6YkNPHkJeLUwSySYSUu23U7ccIOZjYGx7XBigwSPAV4tbBLp34BaziXuP38YqOUfEVp4JHLMJD+2HUjcwJAM1NJAhBYJiZxiY8YzycYzbiQbSyQcSzdu48nBr0V+RvrGhz932Mn29x98+OFDjbVsP/sZ/FpAgJm3AcpKAPmOoHogYPzZQFDNKBgFo2AUjGQAABTKQr8P4SUdAAAAAElFTkSuQmCC","orcid":"","institution":"Sichuan Normal University","correspondingAuthor":true,"prefix":"","firstName":"Guoping","middleName":"","lastName":"Zhao","suffix":""}],"badges":[],"createdAt":"2024-10-31 03:53:16","currentVersionCode":1,"declarations":"","doi":"10.21203/rs.3.rs-5364646/v1","doiUrl":"https://doi.org/10.21203/rs.3.rs-5364646/v1","draftVersion":[],"editorialEvents":[{"content":"https://doi.org/10.1038/s41598-025-98824-0","type":"published","date":"2025-04-29T15:57:18+00:00"}],"editorialNote":"","failedWorkflow":false,"files":[{"id":70083716,"identity":"3562b755-3d08-4abd-ab16-bfa7037805a9","added_by":"auto","created_at":"2024-11-28 07:48:01","extension":"png","order_by":1,"title":"Figure 1","display":"","copyAsset":false,"role":"figure","size":833002,"visible":true,"origin":"","legend":"\u003cp\u003eThe top and side views of (a) \u003cem\u003eα\u003c/em\u003e-Ge₂Y₂ and (b) \u003cem\u003eβ\u003c/em\u003e-Ge₂Y₂ monolayers. (c) shows the band structure of the Ge₂As₂ monolayers in its intrinsic state under both \u003cem\u003eα\u003c/em\u003eand \u003cem\u003eβ\u003c/em\u003e phases. (d) depicts the variation of the bandgap of Ge₂As₂ monolayers with uniaxial or biaxial strain \u003cem\u003eε\u003c/em\u003e.\u003c/p\u003e","description":"","filename":"Figure1.png","url":"https://assets-eu.researchsquare.com/files/rs-5364646/v1/dce7c1168ba240e90723995c.png"},{"id":70083717,"identity":"1b6f33a0-c733-4d78-bf5a-8bca1a38636f","added_by":"auto","created_at":"2024-11-28 07:48:01","extension":"png","order_by":2,"title":"Figure 2","display":"","copyAsset":false,"role":"figure","size":705414,"visible":true,"origin":"","legend":"\u003cp\u003eThe band structures of Ge\u003csub\u003e2\u003c/sub\u003eP\u003csub\u003e2\u003c/sub\u003e monolayers (a) and Ge\u003csub\u003e2\u003c/sub\u003eN\u003csub\u003e2\u003c/sub\u003e monolayers (b) in their intrinsic state. The band gap variation of Ge\u003csub\u003e2\u003c/sub\u003eP\u003csub\u003e2\u003c/sub\u003e monolayers (c) and Ge\u003csub\u003e2\u003c/sub\u003eN\u003csub\u003e2\u003c/sub\u003e monolayers (d) with (uniaxial or biaxial) strain \u003cem\u003eε\u003c/em\u003e.\u003c/p\u003e","description":"","filename":"Figure2.png","url":"https://assets-eu.researchsquare.com/files/rs-5364646/v1/3d188f1eb24f967776cdf383.png"},{"id":70084839,"identity":"78fbee00-5a71-4e5a-9303-91ec1d720ede","added_by":"auto","created_at":"2024-11-28 07:56:01","extension":"png","order_by":3,"title":"Figure 3","display":"","copyAsset":false,"role":"figure","size":499694,"visible":true,"origin":"","legend":"\u003cp\u003eElectron transport properties of \u003cem\u003ep\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction diode in α-Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e monolayers. (a) Schematic of the \u003cem\u003ep\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction diodes. I-V curves and rectification ratio curves based on \u003cem\u003ep\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction diodes of \u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eAs\u003csub\u003e2\u003c/sub\u003e monolayer (b, c) \u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eP\u003csub\u003e2\u003c/sub\u003e monolayer (d, e) and \u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eN\u003csub\u003e2\u003c/sub\u003e monolayer (f, g).\u003c/p\u003e","description":"","filename":"Figure3.png","url":"https://assets-eu.researchsquare.com/files/rs-5364646/v1/6687382c310048ea87ae146b.png"},{"id":70084838,"identity":"e8ef873a-1ff3-40f7-bf7d-c3388d3427fa","added_by":"auto","created_at":"2024-11-28 07:56:01","extension":"png","order_by":4,"title":"Figure 4","display":"","copyAsset":false,"role":"figure","size":647092,"visible":true,"origin":"","legend":"\u003cp\u003e(a) Schematic of \u003cem\u003ep\u003c/em\u003e-\u003cem\u003ei\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction field-effect transistor in \u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eAs\u003csub\u003e2\u003c/sub\u003e monolayer. I-V curves and rectification ratio curves at gate voltages of 0 (b), -5 (c), and 5 V (d).\u003c/p\u003e","description":"","filename":"Figure4.png","url":"https://assets-eu.researchsquare.com/files/rs-5364646/v1/a7f50728550c9794ee273ad5.png"},{"id":70084840,"identity":"f1967e73-2f20-4d03-8c8b-dbfb36b6d899","added_by":"auto","created_at":"2024-11-28 07:56:01","extension":"png","order_by":5,"title":"Figure 5","display":"","copyAsset":false,"role":"figure","size":318479,"visible":true,"origin":"","legend":"\u003cp\u003eTransport characteristics of \u003cem\u003ep\u003c/em\u003e-\u003cem\u003ei\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction field-effect transistor (FET) based on \u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eP\u003csub\u003e2\u003c/sub\u003e monolayer at different gate voltages. I-V curves (a) and rectification ratio curves (b) of \u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eP\u003csub\u003e2\u003c/sub\u003e monolayer \u003cem\u003ep\u003c/em\u003e-\u003cem\u003ei\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction FET at gate voltages of 0, 5, and 10 V.\u003c/p\u003e","description":"","filename":"Figure5.png","url":"https://assets-eu.researchsquare.com/files/rs-5364646/v1/5402c7e355909e90310aa03d.png"},{"id":70083723,"identity":"cfdfa8ac-60cf-4c87-9377-a5581fd1d213","added_by":"auto","created_at":"2024-11-28 07:48:01","extension":"png","order_by":6,"title":"Figure 6","display":"","copyAsset":false,"role":"figure","size":322967,"visible":true,"origin":"","legend":"\u003cp\u003eTransport characteristics of \u003cem\u003ep\u003c/em\u003e-\u003cem\u003ei\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction field-effect transistor (FET) based on \u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eN\u003csub\u003e2\u003c/sub\u003e monolayer at different gate voltages. I-V curves (a) and rectification ratio curves (b) of \u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eN\u003csub\u003e2\u003c/sub\u003e monolayer \u003cem\u003ep\u003c/em\u003e-\u003cem\u003ei\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction FET at gate voltages of 0, 5, and 10 V.\u003c/p\u003e","description":"","filename":"Figure6.png","url":"https://assets-eu.researchsquare.com/files/rs-5364646/v1/5695d6ea00b9b8fd2fa1ca83.png"},{"id":70083722,"identity":"2c94fdd0-01df-4d88-a34c-421b3e499392","added_by":"auto","created_at":"2024-11-28 07:48:01","extension":"png","order_by":7,"title":"Figure 7","display":"","copyAsset":false,"role":"figure","size":561963,"visible":true,"origin":"","legend":"\u003cp\u003eOptoelectronic properties of \u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e monolayers. (a) Schematic of \u003cem\u003ep\u003c/em\u003e-\u003cem\u003ei\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction optoelectronic transistor in \u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eAs\u003csub\u003e2\u003c/sub\u003e monolayer. The photocurrent of \u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eAs\u003csub\u003e2\u003c/sub\u003e monolayer(b), \u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eP\u003csub\u003e2\u003c/sub\u003e monolayer(c) and \u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eN\u003csub\u003e2\u003c/sub\u003e monolayer(d) optoelectronic transistor at zero bias voltage (no power source).\u003c/p\u003e","description":"","filename":"Figure7.png","url":"https://assets-eu.researchsquare.com/files/rs-5364646/v1/206c6caab4a23984c597afa0.png"},{"id":81988394,"identity":"091c911b-2208-4c3a-ad3f-fd80c43ec115","added_by":"auto","created_at":"2025-05-05 16:08:36","extension":"pdf","order_by":0,"title":"","display":"","copyAsset":false,"role":"manuscript-pdf","size":4621171,"visible":true,"origin":"","legend":"","description":"","filename":"manuscript.pdf","url":"https://assets-eu.researchsquare.com/files/rs-5364646/v1/bb1c95c6-7ed8-4cf4-8ad0-db6b295af93f.pdf"},{"id":70083719,"identity":"e97d26d1-70a8-4dfa-ae50-b4508ce7c53f","added_by":"auto","created_at":"2024-11-28 07:48:01","extension":"pdf","order_by":1,"title":"","display":"","copyAsset":false,"role":"supplement","size":667827,"visible":true,"origin":"","legend":"","description":"","filename":"Supplementarymaterials.pdf","url":"https://assets-eu.researchsquare.com/files/rs-5364646/v1/90a9150f8eae27b7d3b34989.pdf"}],"financialInterests":"No competing interests reported.","formattedTitle":"Study on Electronic Transport and Optoelectronic Properties of Semiconductor 2D Ge₂Y₂ (Y = As, P, N)","fulltext":[{"header":"1. Introduction","content":"\u003cp\u003eSince the discovery and successful mechanical exfoliation of graphene in 2004,\u003c/p\u003e \u003cp\u003ethere has been a surge in research on 2D materials\u003csup\u003e\u003cspan citationid=\"CR1\" class=\"CitationRef\"\u003e1\u003c/span\u003e,\u003cspan citationid=\"CR2\" class=\"CitationRef\"\u003e2\u003c/span\u003e\u003c/sup\u003e. Many 2D materials have since been predicted and experimentally synthesized, such as transition metal dichalcogenides\u003csup\u003e\u003cspan additionalcitationids=\"CR4 CR5 CR6\" citationid=\"CR3\" class=\"CitationRef\"\u003e3\u003c/span\u003e\u0026ndash;\u003cspan citationid=\"CR7\" class=\"CitationRef\"\u003e7\u003c/span\u003e\u003c/sup\u003e, borophene\u003csup\u003e\u003cspan additionalcitationids=\"CR9 CR10 CR11 CR12 CR13\" citationid=\"CR8\" class=\"CitationRef\"\u003e8\u003c/span\u003e\u0026ndash;\u003cspan citationid=\"CR14\" class=\"CitationRef\"\u003e14\u003c/span\u003e\u003c/sup\u003e, phosphorene\u003csup\u003e\u003cspan citationid=\"CR15\" class=\"CitationRef\"\u003e15\u003c/span\u003e,\u003cspan citationid=\"CR16\" class=\"CitationRef\"\u003e16\u003c/span\u003e\u003c/sup\u003e, and MA₂Z₄ family materials\u003csup\u003e\u003cspan citationid=\"CR17\" class=\"CitationRef\"\u003e17\u003c/span\u003e,\u003cspan citationid=\"CR18\" class=\"CitationRef\"\u003e18\u003c/span\u003e\u003c/sup\u003e, revealing novel physical and chemical properties as well as promising applications. Compared to bulk materials, 2D materials exhibit unique structures that confer new electronic and optoelectronic properties. Their thermoelectric transport is confined to a single plane, which makes them suitable for applications in electronics, optoelectronics, spintronics, sensors, and field-effect transistors. Studies have found that 2D semiconductor materials possess many excellent functional properties, including rectification effects, gate behavior, and spin filtering effects, which can be utilized in developing next-generation nanoelectronic devices\u003csup\u003e\u003cspan additionalcitationids=\"CR20\" citationid=\"CR19\" class=\"CitationRef\"\u003e19\u003c/span\u003e\u0026ndash;\u003cspan citationid=\"CR21\" class=\"CitationRef\"\u003e21\u003c/span\u003e\u003c/sup\u003e.\u003c/p\u003e \u003cp\u003eIn semiconductor device applications, corrugated 2D materials\u003csup\u003e\u003cspan citationid=\"CR22\" class=\"CitationRef\"\u003e22\u003c/span\u003e\u003c/sup\u003e such as arsenene, monolayer SnSb, and monolayer GeSe have multiple advantages over planar 2D materials: wide adjustable bandgaps\u003csup\u003e\u003cspan citationid=\"CR23\" class=\"CitationRef\"\u003e23\u003c/span\u003e\u003c/sup\u003e, in-plane anisotropy\u003csup\u003e\u003cspan citationid=\"CR24\" class=\"CitationRef\"\u003e24\u003c/span\u003e\u003c/sup\u003e, high carrier mobility\u003csup\u003e\u003cspan citationid=\"CR23\" class=\"CitationRef\"\u003e23\u003c/span\u003e\u003c/sup\u003e, and high rectification ratios\u003csup\u003e\u003cspan citationid=\"CR22\" class=\"CitationRef\"\u003e22\u003c/span\u003e,\u003cspan citationid=\"CR23\" class=\"CitationRef\"\u003e23\u003c/span\u003e,\u003cspan citationid=\"CR25\" class=\"CitationRef\"\u003e25\u003c/span\u003e\u003c/sup\u003e. Additionally, 4-atomic-layer corrugated 2D materials exhibit higher stability and more diverse phases than their 2-atomic-layer counterparts\u003csup\u003e\u003cspan citationid=\"CR26\" class=\"CitationRef\"\u003e26\u003c/span\u003e\u003c/sup\u003e. For example, IV-V group X₂Y₂ type 2D materials have lower formation energies than XY type materials\u003csup\u003e\u003cspan additionalcitationids=\"CR28 CR29 CR30 CR31\" citationid=\"CR27\" class=\"CitationRef\"\u003e27\u003c/span\u003e\u0026ndash;\u003cspan citationid=\"CR32\" class=\"CitationRef\"\u003e32\u003c/span\u003e\u003c/sup\u003e. Barreteau et al. successfully constructed layered SiP, SiAs, GeP, and GeAs with monoclinic crystal structures in the C2/m space group\u003csup\u003e\u003cspan additionalcitationids=\"CR34\" citationid=\"CR33\" class=\"CitationRef\"\u003e33\u003c/span\u003e\u0026ndash;\u003cspan citationid=\"CR35\" class=\"CitationRef\"\u003e35\u003c/span\u003e\u003c/sup\u003e. Based on this, Lou et al. proposed stable Ge₂Y₂ structures and studied their thermal transport and thermoelectric properties, indicating promising applications in thermoelectric devices\u003csup\u003e\u003cspan citationid=\"CR27\" class=\"CitationRef\"\u003e27\u003c/span\u003e\u003c/sup\u003e. Despite these advancements, the effects and electronic transport properties in different device architectures remain to be explored. Key aspects to be thoroughly investigated include: (a) the degree of anisotropy in electronic transport, (b) their potential to function as field-effect transistors (FETs), and (c) their optoelectronic properties.\u003c/p\u003e \u003cp\u003eIV-V group Ge₂Y₂ materials exhibit excellent kinetic stability with two stable structural phases, \u003cem\u003eα\u003c/em\u003e-Ge₂Y₂ and \u003cem\u003eβ\u003c/em\u003e-Ge₂Y₂, both showing semiconductor properties\u003csup\u003e\u003cspan citationid=\"CR27\" class=\"CitationRef\"\u003e27\u003c/span\u003e\u003c/sup\u003e. In this paper, we design and study conceptual nano-device structures based on monolayers of \u003cem\u003eα\u003c/em\u003e- and \u003cem\u003eβ\u003c/em\u003e-Ge₂Y₂ (Y\u0026thinsp;=\u0026thinsp;As, P, N), such as \u003cem\u003ep\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction diodes, \u003cem\u003ep\u003c/em\u003e-\u003cem\u003ei\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction field-effect transistors, and phototransistors. We calculate their electronic and optoelectronic transport properties using first-principles methods, revealing their functional characteristics and potential applications in next-generation high-performance electronic devices.\u003c/p\u003e"},{"header":"2. Computational Results and Discussion","content":"\u003cdiv id=\"Sec3\" class=\"Section2\"\u003e \u003ch2\u003e2.1 Electronic Structure of Ge₂Y₂ Monolayers\u003c/h2\u003e \u003cp\u003e \u003c/p\u003e \u003cp\u003eThe ground-state crystal structures of fully relaxed Ge₂Y₂ (Y\u0026thinsp;=\u0026thinsp;As, P, N) monolayers are shown in Fig.\u0026nbsp;\u003cspan refid=\"Fig1\" class=\"InternalRef\"\u003e1\u003c/span\u003e(a) and (b). Each Ge₂Y₂ unit cell contains 4 atoms: 2 Ge atoms and 2 Y atoms. The \u003cem\u003eα\u003c/em\u003e- and \u003cem\u003eβ\u003c/em\u003e-Ge₂Y₂ monolayers consist of two Ge-Y layers connected by Ge-Ge bonds, forming AA and AB stacking. Ge and Y atoms are arranged in hexagonal honeycomb lattices, forming two structures: \u003cem\u003eα\u003c/em\u003e-Ge₂Y₂ monolayers(see Fig.\u0026nbsp;\u003cspan refid=\"Fig1\" class=\"InternalRef\"\u003e1\u003c/span\u003e(a)) correspond to the 2D crystal space groups [\u003cspan class=\"InlineEquation\"\u003e\u003cspan class=\"mathinline\"\u003e\\(P\\bar {6}m2\\)\u003c/span\u003e\u003c/span\u003e](No. 187), while \u003cem\u003eβ\u003c/em\u003e-Ge₂Y₂ monolayers(see Fig.\u0026nbsp;\u003cspan refid=\"Fig1\" class=\"InternalRef\"\u003e1\u003c/span\u003e(b)) correspond to the [\u003cspan class=\"InlineEquation\"\u003e\u003cspan class=\"mathinline\"\u003e\\(P\\bar {3}m1\\)\u003c/span\u003e\u003c/span\u003e](No. 164). Based on total energy calculations from spin-polarized and non-polarized approaches, \u003cem\u003eα\u003c/em\u003e-Ge₂Y₂ and \u003cem\u003eβ\u003c/em\u003e-Ge₂Y₂ monolayers exhibit non-magnetic ground states, consistent with recent reports\u003csup\u003e\u003cspan citationid=\"CR26\" class=\"CitationRef\"\u003e26\u003c/span\u003e,\u003cspan citationid=\"CR30\" class=\"CitationRef\"\u003e30\u003c/span\u003e\u003c/sup\u003e. Table\u0026nbsp;\u003cspan refid=\"Tab1\" class=\"InternalRef\"\u003e1\u003c/span\u003e lists the lattice parameters of Ge₂Y₂ (Y\u0026thinsp;=\u0026thinsp;As, P, N) monolayers and previously reported values. The lattice constants of \u003cem\u003eα\u003c/em\u003e- and \u003cem\u003eβ\u003c/em\u003e-Ge₂As₂ monolayers are \u003cem\u003ea\u003c/em\u003e\u0026thinsp;=\u0026thinsp;3.800 \u0026Aring; and \u003cem\u003ea\u003c/em\u003e\u0026thinsp;=\u0026thinsp;3.815 \u0026Aring;, respectively, consistent with prior data\u003csup\u003e\u003cspan citationid=\"CR27\" class=\"CitationRef\"\u003e27\u003c/span\u003e\u003c/sup\u003e. Our results also indicate that the lattice constants of Ge₂Y₂ (Y\u0026thinsp;=\u0026thinsp;As, P, N) monolayers decrease as the atomic radius of element Y decreases from As to N.\u003c/p\u003e \u003cp\u003e \u003cdiv class=\"gridtable\"\u003e\u003ctable float=\"Yes\" id=\"Tab1\" border=\"1\"\u003e \u003ccaption language=\"En\"\u003e \u003cdiv class=\"CaptionNumber\"\u003eTable 1\u003c/div\u003e \u003cdiv class=\"CaptionContent\"\u003e \u003cp\u003eCrystal Structure Parameters and Band Gaps of \u003cem\u003eα\u003c/em\u003e- and \u003cem\u003eβ\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e Monolayers.\u003c/p\u003e \u003c/div\u003e \u003c/caption\u003e \u003ccolgroup cols=\"7\"\u003e \u003cdiv align=\"left\" class=\"colspec\" colname=\"c1\" colnum=\"1\"\u003e\u003c/div\u003e \u003cdiv align=\"char\" char=\".\" class=\"colspec\" colname=\"c2\" colnum=\"2\"\u003e\u003c/div\u003e \u003cdiv align=\"char\" char=\".\" class=\"colspec\" colname=\"c3\" colnum=\"3\"\u003e\u003c/div\u003e \u003cdiv align=\"char\" char=\".\" class=\"colspec\" colname=\"c4\" colnum=\"4\"\u003e\u003c/div\u003e \u003cdiv align=\"left\" class=\"colspec\" colname=\"c5\" colnum=\"5\"\u003e\u003c/div\u003e \u003cdiv align=\"left\" class=\"colspec\" colname=\"c6\" colnum=\"6\"\u003e\u003c/div\u003e \u003cdiv align=\"left\" class=\"colspec\" colname=\"c7\" colnum=\"7\"\u003e\u003c/div\u003e \u003cthead\u003e \u003ctr\u003e \u003cth align=\"left\" colname=\"c1\" morerows=\"1\" rowspan=\"2\"\u003e\u0026nbsp;\u003c/th\u003e \u003cth align=\"left\" colname=\"c2\" morerows=\"1\" rowspan=\"2\"\u003e \u003cp\u003eLattice(\u0026Aring;)\u003c/p\u003e \u003cp\u003e\u003cem\u003ea\u003c/em\u003e\u003c/p\u003e \u003c/th\u003e \u003cth align=\"left\" colspan=\"2\" nameend=\"c4\" namest=\"c3\"\u003e \u003cp\u003eBand length(\u0026Aring;)\u003c/p\u003e \u003c/th\u003e \u003cth align=\"left\" colname=\"c5\" morerows=\"1\" rowspan=\"2\"\u003e \u003cp\u003eStacking type\u003c/p\u003e \u003c/th\u003e \u003cth align=\"left\" colname=\"c6\" morerows=\"1\" rowspan=\"2\"\u003e \u003cp\u003eSpace group\u003c/p\u003e \u003c/th\u003e \u003cth align=\"left\" colname=\"c7\" morerows=\"1\" rowspan=\"2\"\u003e \u003cp\u003eBandgap(eV)\u003c/p\u003e \u003c/th\u003e \u003c/tr\u003e \u003ctr\u003e \u003cth align=\"left\" colname=\"c3\"\u003e \u003cp\u003eL\u003csub\u003eGe\u0026minus;Ge\u003c/sub\u003e\u003c/p\u003e \u003c/th\u003e \u003cth align=\"left\" colname=\"c4\"\u003e \u003cp\u003eL\u003csub\u003eGe\u0026minus;Y\u003c/sub\u003e\u003c/p\u003e \u003c/th\u003e \u003c/tr\u003e \u003c/thead\u003e \u003ctbody\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003e\u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eAs\u003csub\u003e2\u003c/sub\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c2\"\u003e \u003cp\u003e3.821\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c3\"\u003e \u003cp\u003e2.500\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c4\"\u003e \u003cp\u003e2.488\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c5\"\u003e \u003cp\u003eAA\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c6\"\u003e \u003cp\u003e\u003cem\u003eP\u003c/em\u003e\u003csub\u003e\u003cem\u003e6m2\u003c/em\u003e\u003c/sub\u003e(No. 187)\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c7\"\u003e \u003cp\u003e1.06(indirect)\u003csup\u003e\u003cspan citationid=\"CR27\" class=\"CitationRef\"\u003e27\u003c/span\u003e\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003e\u003cem\u003eβ\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eAs\u003csub\u003e2\u003c/sub\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c2\"\u003e \u003cp\u003e3.831\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c3\"\u003e \u003cp\u003e2.483\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c4\"\u003e \u003cp\u003e2.490\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c5\"\u003e \u003cp\u003eAB\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c6\"\u003e \u003cp\u003e\u003cem\u003eP\u003c/em\u003e\u003csub\u003e\u003cem\u003e\u0026minus;3m1\u003c/em\u003e\u003c/sub\u003e(No. 164)\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c7\"\u003e \u003cp\u003e1.01(indirect)\u003csup\u003e\u003cspan citationid=\"CR27\" class=\"CitationRef\"\u003e27\u003c/span\u003e\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003e\u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eAs\u003csub\u003e2\u003c/sub\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c2\"\u003e \u003cp\u003e3.800\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c3\"\u003e \u003cp\u003e2.539\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c4\"\u003e \u003cp\u003e2.479\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c5\"\u003e \u003cp\u003eAA\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c6\"\u003e \u003cp\u003e\u003cem\u003eP\u003c/em\u003e\u003csub\u003e\u003cem\u003e6m2\u003c/em\u003e\u003c/sub\u003e(No. 187)\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c7\"\u003e \u003cp\u003e1.08(indirect)\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003e\u003cem\u003eβ\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eAs\u003csub\u003e2\u003c/sub\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c2\"\u003e \u003cp\u003e3.815\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c3\"\u003e \u003cp\u003e2.416\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c4\"\u003e \u003cp\u003e2.410\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c5\"\u003e \u003cp\u003eAB\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c6\"\u003e \u003cp\u003e\u003cem\u003eP\u003c/em\u003e\u003csub\u003e\u003cem\u003e\u0026minus;3m1\u003c/em\u003e\u003c/sub\u003e(No. 164)\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c7\"\u003e \u003cp\u003e0.92(indirect)\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003e\u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eP\u003csub\u003e2\u003c/sub\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c2\"\u003e \u003cp\u003e3.660\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c3\"\u003e \u003cp\u003e2.507\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c4\"\u003e \u003cp\u003e2.370\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c5\"\u003e \u003cp\u003eAA\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c6\"\u003e \u003cp\u003e\u003cem\u003eP\u003c/em\u003e\u003csub\u003e\u003cem\u003e6m2\u003c/em\u003e\u003c/sub\u003e(No. 187)\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c7\"\u003e \u003cp\u003e1.33(indirect)\u003csup\u003e\u003cspan citationid=\"CR27\" class=\"CitationRef\"\u003e27\u003c/span\u003e\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003e\u003cem\u003eβ\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eP\u003csub\u003e2\u003c/sub\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c2\"\u003e \u003cp\u003e3.672\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c3\"\u003e \u003cp\u003e2.490\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c4\"\u003e \u003cp\u003e2.373\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c5\"\u003e \u003cp\u003eAB\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c6\"\u003e \u003cp\u003e\u003cem\u003eP\u003c/em\u003e\u003csub\u003e\u003cem\u003e\u0026minus;3m1\u003c/em\u003e\u003c/sub\u003e(No. 164)\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c7\"\u003e \u003cp\u003e1.19(indirect)\u003csup\u003e\u003cspan citationid=\"CR27\" class=\"CitationRef\"\u003e27\u003c/span\u003e\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003e\u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eP\u003csub\u003e2\u003c/sub\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c2\"\u003e \u003cp\u003e3.651\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c3\"\u003e \u003cp\u003e2.497\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c4\"\u003e \u003cp\u003e2.362\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c5\"\u003e \u003cp\u003eAA\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c6\"\u003e \u003cp\u003e\u003cem\u003eP\u003c/em\u003e\u003csub\u003e\u003cem\u003e6m2\u003c/em\u003e\u003c/sub\u003e(No. 187)\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c7\"\u003e \u003cp\u003e1.14(indirect)\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003e\u003cem\u003eβ\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eP\u003csub\u003e2\u003c/sub\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c2\"\u003e \u003cp\u003e3.661\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c3\"\u003e \u003cp\u003e2.480\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c4\"\u003e \u003cp\u003e2.365\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c5\"\u003e \u003cp\u003eAB\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c6\"\u003e \u003cp\u003e\u003cem\u003eP\u003c/em\u003e\u003csub\u003e\u003cem\u003e\u0026minus;3m1\u003c/em\u003e\u003c/sub\u003e(No. 164)\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c7\"\u003e \u003cp\u003e0.94(indirect)\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003e\u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eN\u003csub\u003e2\u003c/sub\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c2\"\u003e \u003cp\u003e3.095\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c3\"\u003e \u003cp\u003e2.600\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c4\"\u003e \u003cp\u003e1.909\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c5\"\u003e \u003cp\u003eAA\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c6\"\u003e \u003cp\u003e\u003cem\u003eP\u003c/em\u003e\u003csub\u003e\u003cem\u003e6m2\u003c/em\u003e\u003c/sub\u003e(No. 187)\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c7\"\u003e \u003cp\u003e1.21(indirect)\u003csup\u003e\u003cspan citationid=\"CR27\" class=\"CitationRef\"\u003e27\u003c/span\u003e\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003e\u003cem\u003eβ\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eN\u003csub\u003e2\u003c/sub\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c2\"\u003e \u003cp\u003e3.100\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c3\"\u003e \u003cp\u003e2.544\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c4\"\u003e \u003cp\u003e1.909\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c5\"\u003e \u003cp\u003eAB\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c6\"\u003e \u003cp\u003e\u003cem\u003eP\u003c/em\u003e\u003csub\u003e\u003cem\u003e\u0026minus;3m1\u003c/em\u003e\u003c/sub\u003e(No. 164)\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c7\"\u003e \u003cp\u003e1.12(indirect)\u003csup\u003e\u003cspan citationid=\"CR27\" class=\"CitationRef\"\u003e27\u003c/span\u003e\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003e\u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eN\u003csub\u003e2\u003c/sub\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c2\"\u003e \u003cp\u003e3.104\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c3\"\u003e \u003cp\u003e2.551\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c4\"\u003e \u003cp\u003e1.915\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c5\"\u003e \u003cp\u003eAA\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c6\"\u003e \u003cp\u003e\u003cem\u003eP\u003c/em\u003e\u003csub\u003e\u003cem\u003e6m2\u003c/em\u003e\u003c/sub\u003e(No. 187)\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c7\"\u003e \u003cp\u003e1.14(indirect)\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003e\u003cem\u003eβ\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eN\u003csub\u003e2\u003c/sub\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c2\"\u003e \u003cp\u003e3.116\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c3\"\u003e \u003cp\u003e2.533\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\".\" colname=\"c4\"\u003e \u003cp\u003e1.918\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c5\"\u003e \u003cp\u003eAB\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c6\"\u003e \u003cp\u003e\u003cem\u003eP\u003c/em\u003e\u003csub\u003e\u003cem\u003e\u0026minus;3m1\u003c/em\u003e\u003c/sub\u003e(No. 164)\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"left\" colname=\"c7\"\u003e \u003cp\u003e0.94(indirect)\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003c/tbody\u003e \u003c/colgroup\u003e \u003c/table\u003e\u003c/div\u003e \u003c/p\u003e \u003cp\u003eFigure \u003cspan refid=\"Fig1\" class=\"InternalRef\"\u003e1\u003c/span\u003e(c) is the electronic band structure diagram of the Ge\u003csub\u003e2\u003c/sub\u003eAs\u003csub\u003e2\u003c/sub\u003e monolayers, from which it can be directly observed that the Ge\u003csub\u003e2\u003c/sub\u003eAs\u003csub\u003e2\u003c/sub\u003e monolayers are indirect bandgap semiconductors. For the \u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eAs\u003csub\u003e2\u003c/sub\u003e monolayer, the conduction band minimum is located near the M point, and the valence band maximum is at the Γ point. The effective mass of holes at the valence band maximum along the \u003cem\u003ex\u003c/em\u003e- and \u003cem\u003ey\u003c/em\u003e-axis is 2.413 (2.412) \u003cem\u003em\u003c/em\u003e\u003csub\u003ee\u003c/sub\u003e, and the effective mass of electrons at the conduction band minimum along the \u003cem\u003ex\u003c/em\u003e- and \u003cem\u003ey\u003c/em\u003e-axis is 0.2446 (0.5609) \u003cem\u003em\u003c/em\u003e\u003csub\u003ee\u003c/sub\u003e. The Fermi velocities at the M point of the conduction band minimum along the \u003cem\u003ex\u003c/em\u003e- and \u003cem\u003ey\u003c/em\u003e-axis are 1.87\u0026times;10\u003csup\u003e5\u003c/sup\u003e and 7.81\u0026times;10\u003csup\u003e4\u003c/sup\u003e m/s, respectively. The \u003cem\u003eβ\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eAs\u003csub\u003e2\u003c/sub\u003e monolayer exhibits similar characteristics; the effective mass of electrons at the conduction band minimum (and holes at the valence band maximum) is 0.275 (2.185) \u003cem\u003em\u003c/em\u003e\u003csub\u003ee\u003c/sub\u003e, with Fermi velocities at the M point of the conduction band minimum along the \u003cem\u003ex\u003c/em\u003e- and \u003cem\u003ey\u003c/em\u003e-axis being 2.10\u0026times;10\u003csup\u003e5\u003c/sup\u003e and 4.01\u0026times;10\u003csup\u003e4\u003c/sup\u003e m/s, respectively, demonstrating significant anisotropy. However, the \u003cem\u003eα\u003c/em\u003e phase of the Ge\u003csub\u003e2\u003c/sub\u003eAs\u003csub\u003e2\u003c/sub\u003e monolayer displays more pronounced anisotropy compared to the \u003cem\u003eβ\u003c/em\u003e phase. Figures\u0026nbsp;\u003cspan refid=\"Fig2\" class=\"InternalRef\"\u003e2\u003c/span\u003e(a) and (b) represent the band structure diagrams for the Ge\u003csub\u003e2\u003c/sub\u003eP\u003csub\u003e2\u003c/sub\u003e and Ge\u003csub\u003e2\u003c/sub\u003eN\u003csub\u003e2\u003c/sub\u003e monolayers, respectively. Both the Ge\u003csub\u003e2\u003c/sub\u003eP\u003csub\u003e2\u003c/sub\u003e and Ge\u003csub\u003e2\u003c/sub\u003eN\u003csub\u003e2\u003c/sub\u003e monolayers are indirect bandgap semiconductors. Like the Ge\u003csub\u003e2\u003c/sub\u003eAs\u003csub\u003e2\u003c/sub\u003e monolayers, the Ge\u003csub\u003e2\u003c/sub\u003eP\u003csub\u003e2\u003c/sub\u003e monolayers has its conduction band minimum at the M point and its valence band maximum at the Γ point. However, the Ge\u003csub\u003e2\u003c/sub\u003eN\u003csub\u003e2\u003c/sub\u003e monolayers has its conduction band minimum at the Γ point, with its valence band maximum located between the Γ point and the M point. Additionally, energy dispersion exhibits anisotropy away from the Γ point, like many two-dimensional materials, showing anisotropic transport properties in both the \u003cem\u003ex\u003c/em\u003e and \u003cem\u003ey\u003c/em\u003e directions\u003csup\u003e\u003cspan citationid=\"CR36\" class=\"CitationRef\"\u003e36\u003c/span\u003e\u003c/sup\u003e. The specific Fermi velocities of other materials in the Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e family are listed in Table\u0026nbsp;\u003cspan refid=\"Tab2\" class=\"InternalRef\"\u003e2\u003c/span\u003e, among which the Fermi velocity of the Ge\u003csub\u003e2\u003c/sub\u003eP\u003csub\u003e2\u003c/sub\u003e monolayers is close to that of silicene.\u003c/p\u003e \u003cp\u003e \u003cdiv class=\"gridtable\"\u003e\u003ctable float=\"Yes\" id=\"Tab2\" border=\"1\"\u003e \u003ccaption language=\"En\"\u003e \u003cdiv class=\"CaptionNumber\"\u003eTable 2\u003c/div\u003e \u003cdiv class=\"CaptionContent\"\u003e \u003cp\u003eFermi Velocities of \u003cem\u003eα\u003c/em\u003e- and \u003cem\u003eβ\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e Monolayers.\u003c/p\u003e \u003c/div\u003e \u003c/caption\u003e \u003ccolgroup cols=\"5\"\u003e \u003cdiv align=\"left\" class=\"colspec\" colname=\"c1\" colnum=\"1\"\u003e\u003c/div\u003e \u003cdiv align=\"char\" char=\"\u0026times;\" class=\"colspec\" colname=\"c2\" colnum=\"2\"\u003e\u003c/div\u003e \u003cdiv align=\"char\" char=\"\u0026times;\" class=\"colspec\" colname=\"c3\" colnum=\"3\"\u003e\u003c/div\u003e \u003cdiv align=\"char\" char=\"\u0026times;\" class=\"colspec\" colname=\"c4\" colnum=\"4\"\u003e\u003c/div\u003e \u003cdiv align=\"char\" char=\"\u0026times;\" class=\"colspec\" colname=\"c5\" colnum=\"5\"\u003e\u003c/div\u003e \u003cthead\u003e \u003ctr\u003e \u003cth align=\"left\" colname=\"c1\" morerows=\"1\" rowspan=\"2\"\u003e \u003cp\u003eFermi velocity\u003c/p\u003e \u003cp\u003e(m/s)\u003c/p\u003e \u003c/th\u003e \u003cth align=\"left\" colspan=\"2\" nameend=\"c3\" namest=\"c2\"\u003e \u003cp\u003eConduction band minimum\u003c/p\u003e \u003c/th\u003e \u003cth align=\"left\" colspan=\"2\" nameend=\"c5\" namest=\"c4\"\u003e \u003cp\u003eValence band maximum\u003c/p\u003e \u003c/th\u003e \u003c/tr\u003e \u003ctr\u003e \u003cth align=\"left\" colname=\"c2\"\u003e \u003cp\u003e\u003cem\u003ex\u003c/em\u003e-axis\u003c/p\u003e \u003c/th\u003e \u003cth align=\"left\" colname=\"c3\"\u003e \u003cp\u003e\u003cem\u003ey\u003c/em\u003e-axis\u003c/p\u003e \u003c/th\u003e \u003cth align=\"left\" colname=\"c4\"\u003e \u003cp\u003e\u003cem\u003ex\u003c/em\u003e-axis\u003c/p\u003e \u003c/th\u003e \u003cth align=\"left\" colname=\"c5\"\u003e \u003cp\u003e\u003cem\u003ey\u003c/em\u003e-axis\u003c/p\u003e \u003c/th\u003e \u003c/tr\u003e \u003c/thead\u003e \u003ctbody\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003e\u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eAs\u003csub\u003e2\u003c/sub\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\"\u0026times;\" colname=\"c2\"\u003e \u003cp\u003e1.87\u0026times;10\u003csup\u003e5\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\"\u0026times;\" colname=\"c3\"\u003e \u003cp\u003e7.81\u0026times;10\u003csup\u003e4\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\"\u0026times;\" colname=\"c4\"\u003e \u003cp\u003e1.38\u0026times;10\u003csup\u003e5\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\"\u0026times;\" colname=\"c5\"\u003e \u003cp\u003e4.72\u0026times;10\u003csup\u003e1\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003e\u003cem\u003eβ\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eAs\u003csub\u003e2\u003c/sub\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\"\u0026times;\" colname=\"c2\"\u003e \u003cp\u003e2.10\u0026times;10\u003csup\u003e5\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\"\u0026times;\" colname=\"c3\"\u003e \u003cp\u003e4.01\u0026times;10\u003csup\u003e4\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\"\u0026times;\" colname=\"c4\"\u003e \u003cp\u003e6.52\u0026times;10\u003csup\u003e3\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\"\u0026times;\" colname=\"c5\"\u003e \u003cp\u003e3.54\u0026times;10\u003csup\u003e\u0026minus;\u0026thinsp;9\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003e\u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eP\u003csub\u003e2\u003c/sub\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\"\u0026times;\" colname=\"c2\"\u003e \u003cp\u003e1.98\u0026times;10\u003csup\u003e5\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\"\u0026times;\" colname=\"c3\"\u003e \u003cp\u003e8.32\u0026times;10\u003csup\u003e4\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\"\u0026times;\" colname=\"c4\"\u003e \u003cp\u003e1.77\u0026times;10\u003csup\u003e4\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\"\u0026times;\" colname=\"c5\"\u003e \u003cp\u003e3.81\u0026times;10\u003csup\u003e\u0026minus;\u0026thinsp;1\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003e\u003cem\u003eβ\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eP\u003csub\u003e2\u003c/sub\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\"\u0026times;\" colname=\"c2\"\u003e \u003cp\u003e2.15\u0026times;10\u003csup\u003e5\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\"\u0026times;\" colname=\"c3\"\u003e \u003cp\u003e3.72\u0026times;10\u003csup\u003e4\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\"\u0026times;\" colname=\"c4\"\u003e \u003cp\u003e1.31\u0026times;10\u003csup\u003e4\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\"\u0026times;\" colname=\"c5\"\u003e \u003cp\u003e5.76\u0026times;10\u003csup\u003e\u0026minus;\u0026thinsp;9\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003e\u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eN\u003csub\u003e2\u003c/sub\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\"\u0026times;\" colname=\"c2\"\u003e \u003cp\u003e6.96\u0026times;10\u003csup\u003e3\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\"\u0026times;\" colname=\"c3\"\u003e \u003cp\u003e5.23\u0026times;10\u003csup\u003e3\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\"\u0026times;\" colname=\"c4\"\u003e \u003cp\u003e9.10\u0026times;10\u003csup\u003e3\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\"\u0026times;\" colname=\"c5\"\u003e \u003cp\u003e1.00\u0026times;10\u003csup\u003e\u0026minus;\u0026thinsp;1\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003ctr\u003e \u003ctd align=\"left\" colname=\"c1\"\u003e \u003cp\u003e\u003cem\u003eβ\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eN\u003csub\u003e2\u003c/sub\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\"\u0026times;\" colname=\"c2\"\u003e \u003cp\u003e6.54\u0026times;10\u003csup\u003e3\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\"\u0026times;\" colname=\"c3\"\u003e \u003cp\u003e5.06\u0026times;10\u003csup\u003e3\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\"\u0026times;\" colname=\"c4\"\u003e \u003cp\u003e9.53\u0026times;10\u003csup\u003e3\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003ctd align=\"char\" char=\"\u0026times;\" colname=\"c5\"\u003e \u003cp\u003e3.79\u0026times;10\u003csup\u003e\u0026minus;\u0026thinsp;3\u003c/sup\u003e\u003c/p\u003e \u003c/td\u003e \u003c/tr\u003e \u003c/tbody\u003e \u003c/colgroup\u003e \u003c/table\u003e\u003c/div\u003e \u003c/p\u003e \u003cp\u003eThe structural stability of Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e (Y\u0026thinsp;=\u0026thinsp;As, P, N) monolayers has been previously studied and calculated. Results indicate that the phonon spectra of all six Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e structures exhibit no imaginary frequencies throughout the entire Brillouin zone, demonstrating that Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e monolayers are dynamically stable in equilibrium\u003csup\u003e\u003cspan citationid=\"CR27\" class=\"CitationRef\"\u003e27\u003c/span\u003e\u003c/sup\u003e. Due to the high sensitivity of two-dimensional nanomaterials to structural defects, stress and strain can significantly alter their electronic properties. Here, we focus on Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e monolayers and study the impact of different types of strain on their band structures. Uniaxial and biaxial strains are applied along the \u003cem\u003ex\u003c/em\u003e and \u003cem\u003ey\u003c/em\u003e directions (corresponding to hexagonal lattice vectors \u003cem\u003ea\u003c/em\u003e and \u003cem\u003eb\u003c/em\u003e), denoted as \u003cem\u003eε\u003c/em\u003e\u003csub\u003ex\u003c/sub\u003e, \u003cem\u003eε\u003c/em\u003e\u003csub\u003ey\u003c/sub\u003e, and \u003cem\u003eε\u003c/em\u003e\u003csub\u003exy\u003c/sub\u003e, within a strain range of \u0026minus;\u0026thinsp;5\u0026ndash;5%. Strain is defined as: \u003cem\u003eε\u003c/em\u003e\u003csub\u003ex\u003c/sub\u003e = (\u003cem\u003ea\u003c/em\u003e\u0026thinsp;\u0026minus;\u0026thinsp;\u003cem\u003ea\u003c/em\u003e\u003csub\u003e0\u003c/sub\u003e)/\u003cem\u003ea\u003c/em\u003e\u003csub\u003e0\u003c/sub\u003e and \u003cem\u003eε\u003c/em\u003e\u003csub\u003ey\u003c/sub\u003e = (\u003cem\u003eb\u003c/em\u003e\u0026thinsp;\u0026minus;\u0026thinsp;\u003cem\u003eb\u003c/em\u003e\u003csub\u003e0\u003c/sub\u003e)/\u003cem\u003eb\u003c/em\u003e\u003csub\u003e0\u003c/sub\u003e, where \u003cem\u003ea\u003c/em\u003e (\u003cem\u003eb\u003c/em\u003e) and \u003cem\u003ea\u003c/em\u003e\u003csub\u003e0\u003c/sub\u003e (\u003cem\u003eb\u003c/em\u003e\u003csub\u003e0\u003c/sub\u003e) are the lattice constants of the strained and unstrained structures, respectively. Tensile (compressive) strain is represented by positive (negative) values.\u003c/p\u003e \u003cp\u003e \u003c/p\u003e \u003cp\u003eFigures \u003cspan refid=\"Fig1\" class=\"InternalRef\"\u003e1\u003c/span\u003e(d), 2(c), and 2(d) respectively illustrate the variations in bandgap of Ge\u003csub\u003e2\u003c/sub\u003e As\u003csub\u003e2\u003c/sub\u003e, Ge\u003csub\u003e2\u003c/sub\u003eP\u003csub\u003e2\u003c/sub\u003e and Ge\u003csub\u003e2\u003c/sub\u003eN\u003csub\u003e2\u003c/sub\u003e monolayers under different strains. Calculations indicate that within the strain range of \u0026minus;\u0026thinsp;5\u0026ndash;5%, the semiconductor properties of the Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e monolayers remain unchanged. As shown in Fig.\u0026nbsp;\u003cspan refid=\"Fig1\" class=\"InternalRef\"\u003e1\u003c/span\u003e(d), when tensile strain is applied in the range of 0\u0026ndash;5% along the uniaxial \u003cem\u003ex\u003c/em\u003e and biaxial \u003cem\u003exy\u003c/em\u003e directions, the bandgap of the strained Ge\u003csub\u003e2\u003c/sub\u003eAs\u003csub\u003e2\u003c/sub\u003e monolayers first increases, reaching a maximum at 3% strain, and then decreases. However, applying strain along the uniaxial \u003cem\u003ey\u003c/em\u003e direction slightly reduces the bandgap. This demonstrates the dependency of the bandgap on compressive and tensile strains.\u003c/p\u003e \u003c/div\u003e \u003cdiv id=\"Sec4\" class=\"Section2\"\u003e \u003ch2\u003e2.2 Constructing Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e Monolayers \u003cem\u003ep\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e Junction Diodes\u003c/h2\u003e \u003cp\u003e \u003c/p\u003e \u003cp\u003eThe \u003cem\u003ep\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction diodes of \u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e and \u003cem\u003eβ\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e monolayers (Fig.\u0026nbsp;\u003cspan refid=\"Fig3\" class=\"InternalRef\"\u003e3\u003c/span\u003e(a)) achieve \u003cem\u003ep\u003c/em\u003e-type and \u003cem\u003en\u003c/em\u003e-type doping using the virtual crystal approximation method\u003csup\u003e\u003cspan additionalcitationids=\"CR38 CR39 CR40\" citationid=\"CR37\" class=\"CitationRef\"\u003e37\u003c/span\u003e\u0026ndash;\u003cspan citationid=\"CR41\" class=\"CitationRef\"\u003e41\u003c/span\u003e\u003c/sup\u003e. The chosen doping method is electrostatic doping by atomic compensation charge, widely used for simulating various nanodevices\u003csup\u003e\u003cspan citationid=\"CR42\" class=\"CitationRef\"\u003e42\u003c/span\u003e\u003c/sup\u003e. Each diode consists of drain (D) and source (S) probes and a central scattering \u003cem\u003ep\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction. The D/S probes are simulated by semi-infinite \u003cem\u003ep\u003c/em\u003e and \u003cem\u003en\u003c/em\u003e-doped supercells along the transport direction. When a forward D-S bias \u003cem\u003eV\u003c/em\u003e\u003csub\u003eb\u003c/sub\u003e is applied, a positive current flows from D to S, and vice versa. The current through the \u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e and \u003cem\u003eβ\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e monolayers \u003cem\u003ep\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction diodes is determined as:\u003cdiv id=\"Equ1\" class=\"Equation\"\u003e\u003cdiv format=\"TEX\" class=\"mathdisplay\" id=\"FileID_Equ1\" name=\"EquationSource\"\u003e\n$$I\\left( {{V_b}} \\right)=\\frac{{2e}}{h}\\int {_{{ - \\infty }}^{\\infty }T\\left( {E,{V_b}} \\right)} \\left[ {{f_D}\\left( {E - {\\mu _D}} \\right) - {f_S}\\left( {E - {\\mu _S}} \\right)} \\right]dE$$\u003c/div\u003e\u003cdiv class=\"EquationNumber\"\u003e1\u003c/div\u003e\u003c/div\u003e\u003c/p\u003e \u003cp\u003eThe Fermi-Dirac distribution function of the D(S) electrode is:\u003cdiv id=\"Equ2\" class=\"Equation\"\u003e\u003cdiv format=\"TEX\" class=\"mathdisplay\" id=\"FileID_Equ2\" name=\"EquationSource\"\u003e\n$${f_{D\\left( S \\right)}}={\\left\\{ {1+exp\\left[ {{{\\left( {E - {\\mu _{D\\left( S \\right)}}} \\right)} \\mathord{\\left/ {\\vphantom {{\\left( {E - {\\mu _{D\\left( S \\right)}}} \\right)} {{k_B}{T_{D\\left( S \\right)}}}}} \\right. \\kern-0pt} {{k_B}{T_{D\\left( S \\right)}}}}} \\right]} \\right\\}^{ - 1}}$$\u003c/div\u003e\u003cdiv class=\"EquationNumber\"\u003e2\u003c/div\u003e\u003c/div\u003e\u003c/p\u003e \u003cp\u003eHere, \u003cspan class=\"InlineEquation\"\u003e\u003cspan class=\"mathinline\"\u003e\\({\\mu _{D\\left( S \\right)}}\\)\u003c/span\u003e\u003c/span\u003eand \u003cspan class=\"InlineEquation\"\u003e\u003cspan class=\"mathinline\"\u003e\\({T_{D\\left( S \\right)}}\\)\u003c/span\u003e\u003c/span\u003e represent the chemical potential and electron temperature, respectively. In this work, the bias voltage ranges from \u0026minus;\u0026thinsp;0.5 to 0.5 V with a sampling interval of 0.1 V. The paper primarily discusses the \u003cem\u003eβ\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e monolayers \u003cem\u003ep\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction diodes, with the results for the \u003cem\u003eβ\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e monolayers provided in the supplementary materials (FIG. \u003cspan refid=\"MOESM1\" class=\"InternalRef\"\u003eS1\u003c/span\u003e).\u003c/p\u003e \u003cp\u003eThe current-voltage (I-V) curves of the \u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eAs\u003csub\u003e2\u003c/sub\u003e monolayer \u003cem\u003ep\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction diode (Fig.\u0026nbsp;\u003cspan refid=\"Fig3\" class=\"InternalRef\"\u003e3\u003c/span\u003e(b)) demonstrate a strong rectification effect in both Z-type and A-type configurations. Under a reverse bias of -0.5 V, the total current of the Z-type and A-type \u003cem\u003ep\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction diodes of the \u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eAs\u003csub\u003e2\u003c/sub\u003e monolayer are 205.85 and 324.16 mA/mm, respectively (Fig.\u0026nbsp;\u003cspan refid=\"Fig3\" class=\"InternalRef\"\u003e3\u003c/span\u003e(b)), showing electrical anisotropy with a ratio of 0.64. Figure\u0026nbsp;\u003cspan refid=\"Fig3\" class=\"InternalRef\"\u003e3\u003c/span\u003e(c) demonstrates the strong rectification effect of the \u003cem\u003ep\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction diodes along the zigzag and armchair directions: both have a rectification ratio RR\u0026thinsp;=\u0026thinsp;I(-\u003cem\u003eV\u003c/em\u003e\u003csub\u003eb\u003c/sub\u003e)/I(\u003cem\u003eV\u003c/em\u003e\u003csub\u003eb\u003c/sub\u003e) as high as 10\u003csup\u003e5\u003c/sup\u003e.\u003c/p\u003e \u003cp\u003eOther monolayers \u003cem\u003ep\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction diodes in the Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e family exhibit similar behavior. For α-Ge\u003csub\u003e2\u003c/sub\u003eP\u003csub\u003e2\u003c/sub\u003e, the total currents for Z-type and A-type \u003cem\u003ep\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction diodes at a reverse bias of -0.5 V are 1.45 and 1.91 mA/mm, respectively (Fig.\u0026nbsp;\u003cspan refid=\"Fig3\" class=\"InternalRef\"\u003e3\u003c/span\u003e(d)), with an electrical anisotropy ratio of 0.75. Similarly, for \u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eN\u003csub\u003e2\u003c/sub\u003e, the total currents for Z-type and A-type \u003cem\u003ep\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction diodes at a reverse bias of -0.5 V are 225.64 and 187.41 \u0026micro;A/mm, with an electrical anisotropy ratio of 1.20(Fig.\u0026nbsp;\u003cspan refid=\"Fig3\" class=\"InternalRef\"\u003e3\u003c/span\u003e(f)). As illustrated in Fig.\u0026nbsp;\u003cspan refid=\"Fig3\" class=\"InternalRef\"\u003e3\u003c/span\u003e(e) and 3(g), the monolayers of \u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eP\u003csub\u003e2\u003c/sub\u003e and \u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eN\u003csub\u003e2\u003c/sub\u003e both exhibit good rectification effects. For the \u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eP\u003csub\u003e2\u003c/sub\u003e monolayers, the A-type device shows better rectification than the Z-type. Similarly to the \u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eAs\u003csub\u003e2\u003c/sub\u003e monolayers, the Z-type device of the \u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eN\u003csub\u003e2\u003c/sub\u003e monolayer has a better rectification effect. These properties suggest that Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e monolayers \u003cem\u003ep\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction diodes have potential applications in rectifiers.\u003c/p\u003e \u003c/div\u003e \u003cdiv id=\"Sec5\" class=\"Section2\"\u003e \u003ch2\u003e2.3 Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e Monolayers \u003cem\u003ep\u003c/em\u003e-\u003cem\u003ei\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e Junction Field-Effect Transistors\u003c/h2\u003e \u003cp\u003e \u003c/p\u003e \u003cp\u003eA vertical electric field can also enhance device transport performance. Therefore, the field-effect characteristics of \u003cem\u003ep\u003c/em\u003e-\u003cem\u003ei\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction field-effect transistors (FETs) based on monolayers Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e (Y\u0026thinsp;=\u0026thinsp;As, P, N) were studied, as shown in Fig.\u0026nbsp;\u003cspan refid=\"Fig5\" class=\"InternalRef\"\u003e4\u003c/span\u003e(a). The FET consists of two side electrodes and a middle intrinsic scattering region. The side electrodes are made of \u003cem\u003ep\u003c/em\u003e-doped and \u003cem\u003en\u003c/em\u003e-doped Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e monolayers. The approximately 3 nm middle intrinsic region (\u003cem\u003ei\u003c/em\u003e) is composed of intrinsic Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e monolayers, serving as the FET channel, and is covered by top and bottom gates spanning the entire intrinsic region. The current through the \u003cem\u003ep\u003c/em\u003e-\u003cem\u003ei\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction FET is determined using the Eq.\u0026nbsp;4\u003csup\u003e3\u003c/sup\u003e:\u003cdiv id=\"Equ3\" class=\"Equation\"\u003e\u003cdiv format=\"TEX\" class=\"mathdisplay\" id=\"FileID_Equ3\" name=\"EquationSource\"\u003e\n$$I({V_b},{V_g})=\\frac{{2e}}{h}f_{{ - \\infty }}^{\\infty }T(E,{V_b},{V_g})\\left[ {{f_D}(E - {\\mu _D}) - {f_S}(E - {\\mu _S})} \\right]dE$$\u003c/div\u003e\u003cdiv class=\"EquationNumber\"\u003e3\u003c/div\u003e\u003c/div\u003e\u003c/p\u003e \u003cp\u003e \u003c/p\u003e \u003cp\u003e \u003c/p\u003e \u003cp\u003eFigure 6. Transport characteristics of \u003cem\u003ep\u003c/em\u003e-\u003cem\u003ei\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction field-effect transistor (FET) based on \u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eN\u003csub\u003e2\u003c/sub\u003e monolayer at different gate voltages. I-V curves (a) and rectification ratio curves (b) of \u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eN\u003csub\u003e2\u003c/sub\u003e monolayer \u003cem\u003ep\u003c/em\u003e-\u003cem\u003ei\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction FET at gate voltages of 0, 5, and 10 V.\u003c/p\u003e \u003cp\u003eThe \u003cem\u003ep\u003c/em\u003e-\u003cem\u003ei\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction FETs based on Ge\u003csub\u003e2\u003c/sub\u003eP\u003csub\u003e2\u003c/sub\u003e and Ge\u003csub\u003e2\u003c/sub\u003eN\u003csub\u003e2\u003c/sub\u003e monolayers also exhibit similar device characteristics to their corresponding \u003cem\u003ep\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction diodes and show equally excellent field-effect behaviors as the \u003cem\u003ep\u003c/em\u003e-\u003cem\u003ei\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction FETs based on \u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eAs\u003csub\u003e2\u003c/sub\u003e monolayers, as shown in Figs.\u0026nbsp;\u003cspan refid=\"Fig6\" class=\"InternalRef\"\u003e5\u003c/span\u003e(a) and 6(a). It is noted that, when a positive gate voltage is applied, the threshold voltage of the Z-type \u003cem\u003ep\u003c/em\u003e-\u003cem\u003ei\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction FETs based on Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e is significantly lower than that of the A-type. As the gate voltage increases, the current density also increases significantly, demonstrating field-effect behavior. Figures\u0026nbsp;\u003cspan refid=\"Fig6\" class=\"InternalRef\"\u003e5\u003c/span\u003e(b) and 6(b) show the rectification ratio curves of the \u003cem\u003ep\u003c/em\u003e-\u003cem\u003ei\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction FETs based on Ge\u003csub\u003e2\u003c/sub\u003eP\u003csub\u003e2\u003c/sub\u003e and Ge\u003csub\u003e2\u003c/sub\u003eN\u003csub\u003e2\u003c/sub\u003e monolayers at different gate voltages. As the gate voltage increases, the rectification ratio increases by at least two orders of magnitude, and in some cases, by up to five orders of magnitude, particularly for Z-type Ge\u003csub\u003e2\u003c/sub\u003eP\u003csub\u003e2\u003c/sub\u003e and A-type Ge\u003csub\u003e2\u003c/sub\u003eN\u003csub\u003e2\u003c/sub\u003e \u003cem\u003ep\u003c/em\u003e-\u003cem\u003ei\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction FETs at -0.5 V, where the rectification ratio reaches 10\u003csup\u003e9\u003c/sup\u003e. The \u003cem\u003eβ\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e monolayers \u003cem\u003ep\u003c/em\u003e-\u003cem\u003ei\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e field-effect transistors also exhibit similarly good gate control behavior, with the specific results shown in Supplementary FIG. S2, S3, and S4. These highly tunable transistor characteristics of monolayer Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e monolayers \u003cem\u003ep\u003c/em\u003e-\u003cem\u003ei\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junctions make them not only ideal materials for efficient current modulation but also promising candidates for the development of next-generation nanoscale field-effect transistor devices.\u003c/p\u003e \u003c/div\u003e \u003cdiv id=\"Sec6\" class=\"Section2\"\u003e \u003ch2\u003e2.4 Study on the Optoelectronic Properties of Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e Monolayers\u003c/h2\u003e \u003cp\u003e \u003c/p\u003e \u003cp\u003eWe further explored the potential applications of \u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e and \u003cem\u003eβ\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e monolayers in optoelectronics, Z-type and A-type \u003cem\u003ep\u003c/em\u003e-\u003cem\u003ei\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction phototransistors based on Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e monolayers were designed and investigated their photocurrent transport properties under illumination. Results for the \u003cem\u003eβ\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e monolayers are presented in the supplementary materials FIG. S5. Figure\u0026nbsp;\u003cspan refid=\"Fig7\" class=\"InternalRef\"\u003e7\u003c/span\u003e(a) is a schematic diagram of the \u003cem\u003ep\u003c/em\u003e-\u003cem\u003ei\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction phototransistors in the Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e monolayers.\u003c/p\u003e \u003cp\u003eIn the simulated photoelectric transport process presented in this paper, the incident light is linearly polarized, with the photon energy range set from 1.6 to 3.2 eV, which corresponds to the visible light range. Specifically, the photocurrent injected into the electrode α can be determined by\u003csup\u003e\u003cspan citationid=\"CR44\" class=\"CitationRef\"\u003e44\u003c/span\u003e,\u003cspan citationid=\"CR45\" class=\"CitationRef\"\u003e45\u003c/span\u003e\u003c/sup\u003e:\u003cdiv id=\"Equ4\" class=\"Equation\"\u003e\u003cdiv format=\"TEX\" class=\"mathdisplay\" id=\"FileID_Equ4\" name=\"EquationSource\"\u003e\n$$\\:{J}_{\\text{D}}^{\\left(ph\\right)}=\\frac{ie}{h}\\int\\:Tr\\left\\{{\\varGamma\\:}_{m}\\left[{G}_{ph}^{\u0026lt;}+{f}_{m}\\left(\\epsilon\\:\\right)({G}_{ph}^{\u0026gt;}-{G}_{ph}^{\u0026lt;})\\right]\\right\\}d\\epsilon\\:$$\u003c/div\u003e\u003cdiv class=\"EquationNumber\"\u003e4\u003c/div\u003e\u003c/div\u003e\u003c/p\u003e \u003cp\u003ewhere \u003cspan class=\"InlineEquation\"\u003e\u003cspan class=\"mathinline\"\u003e\\(\\:m\\:(\\text{D},\\text{S})\\)\u003c/span\u003e\u003c/span\u003e denotes the electrode, \u003cspan class=\"InlineEquation\"\u003e\u003cspan class=\"mathinline\"\u003e\\(\\:{\\varGamma\\:}_{m}=i\\left({\\sum\\:}_{m}^{r}-{\\sum\\:}_{m}^{a}\\right)\\)\u003c/span\u003e\u003c/span\u003e denotes the coupling of the central area with the electrode \u003cspan class=\"InlineEquation\"\u003e\u003cspan class=\"mathinline\"\u003e\\(\\:m\\)\u003c/span\u003e\u003c/span\u003e. \u003cspan class=\"InlineEquation\"\u003e\u003cspan class=\"mathinline\"\u003e\\(\\:{G}_{ph}^{\u0026lt;/\u0026gt;}={G}_{0}^{r}{\\sum\\:}_{ph}^{\u0026lt;/\u0026gt;}{G}_{0}^{a}\\)\u003c/span\u003e\u003c/span\u003edenotes the lesser (greater) Green\u0026rsquo;s function of the central area; \u003cspan class=\"InlineEquation\"\u003e\u003cspan class=\"mathinline\"\u003e\\(\\:{\\sum\\:}_{ph}^{\u0026lt;/\u0026gt;}\\)\u003c/span\u003e\u003c/span\u003eis the self-energy of electrodes with the electron\u0026ndash;photon interaction\u003csup\u003e\u003cspan citationid=\"CR46\" class=\"CitationRef\"\u003e46\u003c/span\u003e\u003c/sup\u003e, which includes the information about the polarization of the polarized light of a complex vector \u003cspan class=\"InlineEquation\"\u003e\u003cspan class=\"mathinline\"\u003e\\(\\:e\\)\u003c/span\u003e\u003c/span\u003e; \u003cspan class=\"InlineEquation\"\u003e\u003cspan class=\"mathinline\"\u003e\\(\\:{f}_{a}\\left(\\epsilon\\:\\right)\\)\u003c/span\u003e\u003c/span\u003erepresents the Fermi\u0026ndash;Dirac distribution function to the electrode \u003cspan class=\"InlineEquation\"\u003e\u003cspan class=\"mathinline\"\u003e\\(\\:m\\)\u003c/span\u003e\u003c/span\u003e. The normalized photocurrent can be denoted by the following photoresponse function\u003csup\u003e\u003cspan citationid=\"CR47\" class=\"CitationRef\"\u003e47\u003c/span\u003e,\u003cspan citationid=\"CR48\" class=\"CitationRef\"\u003e48\u003c/span\u003e\u003c/sup\u003e:\u003cdiv id=\"Equ5\" class=\"Equation\"\u003e\u003cdiv format=\"TEX\" class=\"mathdisplay\" id=\"FileID_Equ5\" name=\"EquationSource\"\u003e\n$$\\:I={J}_{\\text{D}}^{\\left(ph\\right)}/\\text{e}{I}_{{\\omega\\:}}$$\u003c/div\u003e\u003cdiv class=\"EquationNumber\"\u003e5\u003c/div\u003e\u003c/div\u003e\u003c/p\u003e \u003cp\u003ewhere \u003cspan class=\"InlineEquation\"\u003e\u003cspan class=\"mathinline\"\u003e\\(\\:{I}_{{\\omega\\:}}\\)\u003c/span\u003e\u003c/span\u003e is the photon flux. Under zero bias (no power supply), We then give, in Figs.\u0026nbsp;\u003cspan refid=\"Fig7\" class=\"InternalRef\"\u003e7\u003c/span\u003e(b), (c)and (d), the photocurrent (\u003cem\u003eI\u003c/em\u003e) for different photon energies in the \u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eAs\u003csub\u003e2\u003c/sub\u003e, \u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eP\u003csub\u003e2\u003c/sub\u003e and \u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eN\u003csub\u003e2\u003c/sub\u003e monolayers \u003cem\u003ep\u003c/em\u003e-\u003cem\u003ei\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction phototransistors. This indicates that in the higher photon energy range of 2.6 to 3.2 eV, the photocurrent (\u003cem\u003eI\u003c/em\u003e) in the Z-type for the \u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eAs\u003csub\u003e2\u003c/sub\u003e and \u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eP\u003csub\u003e2\u003c/sub\u003e monolayers is significantly greater than that in the A-type. Additionally, the Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e monolayer \u003cem\u003ep\u003c/em\u003e-\u003cem\u003ei\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction phototransistor exhibits weaker anisotropic optoelectronic characteristics. The photocurrent of the \u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eAs\u003csub\u003e2\u003c/sub\u003e and \u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eP\u003csub\u003e2\u003c/sub\u003e monolayers \u003cem\u003ep\u003c/em\u003e-\u003cem\u003ei\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction phototransistors reach the maximum of 3.49 and 3.12 respectively at 3.2 eV, suggests that they have potential applications in optoelectronic devices within the visible light range, particularly in the violet light spectrum. The \u003cem\u003eα\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eN\u003csub\u003e2\u003c/sub\u003e monolayer \u003cem\u003ep\u003c/em\u003e-\u003cem\u003ei\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction phototransistor exhibits a stronger photoelectric response to yellow-green light in the visible spectrum, with its Z-type device achieving a maximum photocurrent of 4.63 at 2.2 eV. These values correspond to different regions of visible light, suggesting their potential applications in photodetectors for various visible light spectra. Additionally, the \u003cem\u003eβ\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e monolayers \u003cem\u003ep\u003c/em\u003e-\u003cem\u003ei\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction phototransistors also exhibit good optoelectronic response and anisotropy, with specific results shown in the supplementary materials. These excellent optoelectronic properties make Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e monolayers promising materials for photovoltaic devices and photodetectors.\u003c/p\u003e \u003c/div\u003e"},{"header":"3. Conclusion","content":"\u003cp\u003eIn this study, we employed the first-principles calculations based on Density functional theory (DFT) to design conceptual nanodevices based on Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e (Y\u0026thinsp;=\u0026thinsp;As, P, N) monolayers and investigated their electronic, transport, and optoelectronic properties. The results indicate that Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e semiconductors with indirect bandgaps ranging from 0.92 to 1.14 eV exhibit good dynamic stability and significant mechanical anisotropy. The electronic properties of Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e monolayers are highly sensitive to applied uniaxial and biaxial strains, with strain predicted to be an effective method for tuning bandgaps. Both Z-type and A-type Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e monolayers \u003cem\u003ep\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction diodes demonstrate strong rectification effects, with ultra-high rectification ratios (up to 10\u003csup\u003e5\u003c/sup\u003e for Ge\u003csub\u003e2\u003c/sub\u003eAs\u003csub\u003e2\u003c/sub\u003e), high current densities (up to 324.16 mA/mm for Ge\u003csub\u003e2\u003c/sub\u003eAs\u003csub\u003e2\u003c/sub\u003e), significant electrical anisotropy, and high current anisotropy ratios (1.20 for Ge\u003csub\u003e2\u003c/sub\u003eN\u003csub\u003e2\u003c/sub\u003e). Field-effect transistors based on Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e monolayers exhibit perfect rectification effects and strong electrical anisotropy similar to \u003cem\u003ep\u003c/em\u003e-\u003cem\u003en\u003c/em\u003e junction diodes. Additionally, gate voltage can effectively modulate the current of field-effect transistors. Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e monolayers and their phototransistors also show excellent photoresponse in the visible regions. The different device performances from As to N in Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e monolayers highlight their potential applications in functional electronic and optoelectronic devices. Due to their indirect and strain-tunable bandgaps, and excellent electronic transport and optoelectronic properties, Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e monolayers materials are promising candidates for applications in nano-devices and optoelectronic devices.\u003c/p\u003e"},{"header":"4. Computational Methods","content":"\u003cp\u003eThe electronic structure and transport properties of 2D Ge₂Y₂ monolayers were studied using density functional theory\u003csup\u003e\u003cspan additionalcitationids=\"CR50\" citationid=\"CR49\" class=\"CitationRef\"\u003e49\u003c/span\u003e\u0026ndash;\u003cspan citationid=\"CR51\" class=\"CitationRef\"\u003e51\u003c/span\u003e\u003c/sup\u003e combined with the nonequilibrium Green's function method\u003csup\u003e\u003cspan additionalcitationids=\"CR53 CR54\" citationid=\"CR52\" class=\"CitationRef\"\u003e52\u003c/span\u003e\u0026ndash;\u003cspan citationid=\"CR55\" class=\"CitationRef\"\u003e55\u003c/span\u003e\u003c/sup\u003e. Calculations were performed using the Hongzhiwei Nanodcal software\u003csup\u003e\u003cspan citationid=\"CR56\" class=\"CitationRef\"\u003e56\u003c/span\u003e,\u003cspan citationid=\"CR57\" class=\"CitationRef\"\u003e57\u003c/span\u003e\u003c/sup\u003e. Electron interactions were treated with the generalized gradient approximation\u003csup\u003e\u003cspan citationid=\"CR58\" class=\"CitationRef\"\u003e58\u003c/span\u003e,\u003cspan citationid=\"CR59\" class=\"CitationRef\"\u003e59\u003c/span\u003e\u003c/sup\u003e, and the atomic nuclei were described by optimized norm-conserving pseudopotentials\u003csup\u003e\u003cspan citationid=\"CR60\" class=\"CitationRef\"\u003e60\u003c/span\u003e\u003c/sup\u003e. During structural optimization, the total energy and forces on each atom were converged to less than 10⁻⁶ eV and 10⁻⁴ eV/\u0026Aring;, respectively. To ensure sufficient accuracy and computational efficiency, a cutoff energy of 100 Ha and a 1\u0026times;8\u0026times;8 Monkhorst-Pack \u003cem\u003ek\u003c/em\u003e-points grid were used for Brillouin zone sampling and structural optimization. To avoid interactions between adjacent layers, a vacuum space of approximately 25 \u0026Aring; was added in the vertical direction of the 2D surface. For electronic transport calculations, the Brillouin zones of the left and right electrodes of armchair (A-type) and zigzag (Z-type) Ge₂Y₂ monolayer devices were sampled with 1\u0026times;7\u0026times;280 and 1\u0026times;4\u0026times;300 \u003cem\u003ek\u003c/em\u003e-points grids, respectively.\u003c/p\u003e"},{"header":"Declarations","content":"\u003ch2\u003eAuthor Contribution\u003c/h2\u003e\u003cp\u003eJ.L. was responsible for the main work of device design and theoretical calculations, and reviewed the final version of the article.J.L. and N.F. jointly processed and analyzed the computational data and created the relevant figures.J.L. and G.Z. co-wrote the main manuscript text, provided support for the theoretical framework, and conducted in-depth discussions and revisions of the theoretical parts of the manuscript.Y.A. reviewed and edited the materials and methods section of the manuscript.S.G. primarily conducted the review of the paper,.All authors participated in the discussion of the article, and reviewed the final manuscript. We confirm that all authors agree to submit this article and are responsible for its content.\u003c/p\u003e\u003ch2\u003eAcknowledgments\u003c/h2\u003e \u003cp\u003e*G.Z. acknowledges the support from the National Natural Science Foundation of China (Grant Nos. 12474122, 52171188, 51771127 and 52111530143) and the Central Government Funds of Guiding Local Scientific and Technological Development for Sichuan Province (No. 2021ZYD0025). This work was also supported by the National Natural Science Foundation of China (Grant No. 12274117), the Program for Innovative Research Team (in Science and Technology) in University of Henan Province (Grant No. 24IRTSTHN025), the Natural Science Foundation of Henan Province (Grant No. 242300421214).\u003c/p\u003e\u003ch2\u003eData Availability\u003c/h2\u003e\u003cp\u003eThe data that support the findings of this study are available from the corresponding authors upon reasonable request.\u003c/p\u003e"},{"header":"References","content":"\u003col\u003e\n\u003cli\u003eNovoselov, K. S.\u003cem\u003e et al.\u003c/em\u003e Electric field effect in atomically thin carbon films. \u003cem\u003eScience\u003c/em\u003e \u003cstrong\u003e306\u003c/strong\u003e, 666-669, doi:doi:10.1126/science.1102896 (2004).\u003c/li\u003e\n\u003cli\u003eGong, C.\u003cem\u003e et al.\u003c/em\u003e Discovery of intrinsic ferromagnetism in two-dimensional van der Waals crystals. \u003cem\u003eNature\u003c/em\u003e \u003cstrong\u003e546\u003c/strong\u003e, 265-269, doi:10.1038/nature22060 (2017).\u003c/li\u003e\n\u003cli\u003eAtaca, C., Şahin, H. \u0026amp; Ciraci, S. Stable, single-layer MX\u003csub\u003e2\u003c/sub\u003e transition-metal oxides and dichalcogenides in a honeycomb-like structure. \u003cem\u003eJ. Phys. Chem. C\u003c/em\u003e \u003cstrong\u003e116\u003c/strong\u003e, 8983-8999, doi:10.1021/jp212558p (2012).\u003c/li\u003e\n\u003cli\u003eAn, M. \u0026amp; Dong, S. Ferroic orders in two-dimensional transition/rare-earth metal halides. \u003cem\u003eAPL Mater.\u003c/em\u003e \u003cstrong\u003e8\u003c/strong\u003e, doi:10.1063/5.0031870 (2020).\u003c/li\u003e\n\u003cli\u003eDu, Y., Yang, L., Liu, H. \u0026amp; Ye, P. D. Contact research strategy for emerging molybdenum disulfide and other two-dimensional field-effect transistors. \u003cem\u003eAPL Mater.\u003c/em\u003e \u003cstrong\u003e2\u003c/strong\u003e, doi:10.1063/1.4894198 (2014).\u003c/li\u003e\n\u003cli\u003eLi, G., Yao, K. \u0026amp; Gao, G. Strain-induced enhancement of thermoelectric performance of TiS\u003csub\u003e2\u003c/sub\u003e monolayer based on first-principles phonon and electron band structures. \u003cem\u003eNanotechnol.\u003c/em\u003e \u003cstrong\u003e29\u003c/strong\u003e, doi:10.1088/1361-6528/aa99ba (2018).\u003c/li\u003e\n\u003cli\u003eMak, K. F. \u0026amp; Shan, J. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides. \u003cem\u003eNat. Photonics\u003c/em\u003e \u003cstrong\u003e10\u003c/strong\u003e, 216-226, doi:10.1038/nphoton.2015.282 (2016).\u003c/li\u003e\n\u003cli\u003eAn, Y.\u003cem\u003e et al.\u003c/em\u003e Unveiling the electric-current-limiting and photodetection effect in two-dimensional hydrogenated borophene. \u003cem\u003ePhys. Rev. Appl.\u003c/em\u003e \u003cstrong\u003e11\u003c/strong\u003e, 064031, doi:10.1103/PhysRevApplied.11.064031 (2019).\u003c/li\u003e\n\u003cli\u003eAn, Y.\u003cem\u003e et al.\u003c/em\u003e How does the electric current propagate through fully-hydrogenated borophene? \u003cem\u003ePhys. Chem. Chem. Phys.\u003c/em\u003e \u003cstrong\u003e20\u003c/strong\u003e, 21552-21556, doi:10.1039/c8cp04272a (2018).\u003c/li\u003e\n\u003cli\u003eAn, Y.\u003cem\u003e et al.\u003c/em\u003e Negative differential conductance effect and electrical anisotropy of 2D ZrB\u003csub\u003e2\u003c/sub\u003e monolayers. \u003cem\u003eJ. Phys.: Condens.Matter\u003c/em\u003e \u003cstrong\u003e31\u003c/strong\u003e, doi:10.1088/1361-648X/aaf5b2 (2019).\u003c/li\u003e\n\u003cli\u003eFeng, B.\u003cem\u003e et al.\u003c/em\u003e Experimental realization of two-dimensional boron sheets. \u003cem\u003eNat. Chem.\u003c/em\u003e \u003cstrong\u003e8\u003c/strong\u003e, 563-568, doi:10.1038/nchem.2491 (2016).\u003c/li\u003e\n\u003cli\u003eMannix, A. J.\u003cem\u003e et al.\u003c/em\u003e Synthesis of borophenes: Anisotropic, two-dimensional boron polymorphs. \u003cstrong\u003e350\u003c/strong\u003e, 1513-1516, doi:doi:10.1126/science.aad1080 (2015).\u003c/li\u003e\n\u003cli\u003eArcudia, J., Kempt, R., Cifuentes-Quintal, M. E., Heine, T. \u0026amp; Merino, G. Blue phosphorene bilayer is a two-dimensional metal and an unambiguous classification scheme for buckled hexagonal bilayers. \u003cem\u003ePhys. Rev. Lett.\u003c/em\u003e \u003cstrong\u003e125\u003c/strong\u003e, 196401, doi:10.1103/PhysRevLett.125.196401 (2020).\u003c/li\u003e\n\u003cli\u003eJiang, Z., Wang, P., Jiang, X. \u0026amp; Zhao, J. MBene (MnB): a new type of 2D metallic ferromagnet with high Curie temperature. \u003cem\u003eNanoscale Horiz.\u003c/em\u003e \u003cstrong\u003e3\u003c/strong\u003e, 335-341, doi:10.1039/c7nh00197e (2018).\u003c/li\u003e\n\u003cli\u003eSibari, A., Kerrami, Z., Kara, A. \u0026amp; Benaissa, M. Strain-engineered p-type to n-type transition in mono-, bi-, and tri-layer black phosphorene. \u003cem\u003eJ. Appl. Phys.\u003c/em\u003e \u003cstrong\u003e127\u003c/strong\u003e, doi:10.1063/1.5140360 (2020).\u003c/li\u003e\n\u003cli\u003eJin, Z., Mullen, J. T. \u0026amp; Kim, K. W. Highly anisotropic electronic transport properties of monolayer and bilayer phosphorene from first principles. \u003cem\u003eAppl. Phys. Lett.\u003c/em\u003e \u003cstrong\u003e109\u003c/strong\u003e, doi:10.1063/1.4960526 (2016).\u003c/li\u003e\n\u003cli\u003eAn, Y.\u003cem\u003e et al.\u003c/em\u003e Nanodevices engineering and spin transport properties of MnBi\u003csub\u003e2\u003c/sub\u003eTe\u003csub\u003e4\u003c/sub\u003e monolayer. \u003cem\u003enpj Comput. Mater.\u003c/em\u003e \u003cstrong\u003e7\u003c/strong\u003e, 45, doi:10.1038/s41524-021-00513-9 (2021).\u003c/li\u003e\n\u003cli\u003eGao, Y.\u003cem\u003e et al.\u003c/em\u003e Electronic transport properties and nanodevice designs for monolayer MoSi\u003csub\u003e2\u003c/sub\u003eP\u003csub\u003e4\u003c/sub\u003e. \u003cem\u003ePhys. Rev. Appl.\u003c/em\u003e \u003cstrong\u003e18\u003c/strong\u003e, 034033, doi:10.1103/PhysRevApplied.18.034033 (2022).\u003c/li\u003e\n\u003cli\u003ePan, Y.\u003cem\u003e et al.\u003c/em\u003e Sub-5-nm Monolayer silicane transistor: A first-principles quantum transport simulation. \u003cem\u003ePhys. Rev. Appl.\u003c/em\u003e \u003cstrong\u003e14\u003c/strong\u003e, 024016, doi:10.1103/PhysRevApplied.14.024016 (2020).\u003c/li\u003e\n\u003cli\u003eSebastian, A., Pendurthi, R., Choudhury, T. H., Redwing, J. M. \u0026amp; Das, S. Benchmarking monolayer MoS\u003csub\u003e2\u003c/sub\u003e and WS\u003csub\u003e2\u003c/sub\u003e field-effect transistors. \u003cem\u003eNat. Commun.\u003c/em\u003e \u003cstrong\u003e12\u003c/strong\u003e, 693, doi:10.1038/s41467-020-20732-w (2021).\u003c/li\u003e\n\u003cli\u003eLv, L.\u003cem\u003e et al.\u003c/em\u003e Reconfigurable two-dimensional optoelectronic devices enabled by local ferroelectric polarization. \u003cem\u003eNat. Commun.\u003c/em\u003e \u003cstrong\u003e10\u003c/strong\u003e, 3331, doi:10.1038/s41467-019-11328-0 (2019).\u003c/li\u003e\n\u003cli\u003eMeng, Y.-X., Zhao, Y.-F. \u0026amp; Li, S.-C. Research progress of puckered honeycomb monolayers. \u003cem\u003eActa Phys. Sin.\u003c/em\u003e \u003cstrong\u003e70\u003c/strong\u003e, doi:10.7498/aps.70.20210638 (2021).\u003c/li\u003e\n\u003cli\u003eChen, W., Gui, X., Yang, L., Zhu, H. \u0026amp; Tang, Z. Wrinkling of two-dimensional materials: methods, properties and applications. \u003cem\u003eNanoscale Horiz.\u003c/em\u003e \u003cstrong\u003e4\u003c/strong\u003e, 291-320, doi:10.1039/c8nh00112j (2019).\u003c/li\u003e\n\u003cli\u003eQu, H., Guo, S., Zhou, W. \u0026amp; Zhang, S. Uncovering the anisotropic electronic structure of 2D group VA-VA monolayers for quantum transport. \u003cem\u003eIEEE Electron Device Lett.\u003c/em\u003e \u003cstrong\u003e42\u003c/strong\u003e, 66-69, doi:10.1109/led.2020.3041657 (2021).\u003c/li\u003e\n\u003cli\u003eCai, Y., Zhang, A., Ping Feng, Y. \u0026amp; Zhang, C. Switching and rectification of a single light-sensitive diarylethene molecule sandwiched between graphene nanoribbons. \u003cem\u003eJ. Chem. Phys.\u003c/em\u003e \u003cstrong\u003e135\u003c/strong\u003e, doi:10.1063/1.3657435 (2011).\u003c/li\u003e\n\u003cli\u003eLin, W., Liang, S.-D., Li, J. \u0026amp; Yao, D.-X. Phonon dispersions and electronic structures of two-dimensional IV-V compounds. \u003cem\u003eCarbon\u003c/em\u003e \u003cstrong\u003e172\u003c/strong\u003e, 345-352, doi:https://doi.org/10.1016/j.carbon.2020.10.043 (2021).\u003c/li\u003e\n\u003cli\u003eLou, A., Liu, Q.-B. \u0026amp; Fu, H.-H. Enhanced thermoelectric performance by lone-pair electrons and bond anharmonicity in the two-dimensional Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e family of materials with Y=N, P, As, or Sb. \u003cem\u003ePhys. Rev. B\u003c/em\u003e \u003cstrong\u003e105\u003c/strong\u003e, 075431, doi:10.1103/PhysRevB.105.075431 (2022).\u003c/li\u003e\n\u003cli\u003eDong, Y., Zhang, C., Meng, M., Groves, M. M. \u0026amp; Lin, J. Novel two-dimensional diamond like carbon nitrides with extraordinary elasticity and thermal conductivity. \u003cem\u003eCarbon\u003c/em\u003e \u003cstrong\u003e138\u003c/strong\u003e, 319-324, doi:https://doi.org/10.1016/j.carbon.2018.06.016 (2018).\u003c/li\u003e\n\u003cli\u003eBafekry, A., Yagmurcukardes, M., Akgenc, B., Ghergherehchi, M. \u0026amp; Mortazavi, B. First-principles investigation of electronic, mechanical and thermoelectric properties of graphene-like XBi (X = Si, Ge, Sn) monolayers. \u003cem\u003ePhys. Chem. Chem. Phys.\u003c/em\u003e \u003cstrong\u003e23\u003c/strong\u003e, 12471-12478, doi:10.1039/d1cp01183a (2021).\u003c/li\u003e\n\u003cli\u003eNiasadegh, N., Naseri, M. \u0026amp; Rezaee, S. Structural, electronic and optical properties of GeX (X\u0026thinsp;=\u0026thinsp;N, P and As) monolayer: under stress and strain conditions. \u003cem\u003eOpt. Quantum Electron.\u003c/em\u003e \u003cstrong\u003e53\u003c/strong\u003e, 502, doi:10.1007/s11082-021-03134-0 (2021).\u003c/li\u003e\n\u003cli\u003e\u0026Ouml;zdamar, B.\u003cem\u003e et al.\u003c/em\u003e Structural, vibrational, and electronic properties of single-layer hexagonal crystals of group IV and V elements. \u003cem\u003ePhys. Rev. B\u003c/em\u003e \u003cstrong\u003e98\u003c/strong\u003e, 045431, doi:10.1103/PhysRevB.98.045431 (2018).\u003c/li\u003e\n\u003cli\u003eGhobadi, N. \u0026amp; Touski, S. B. Structural, electrical and optical properties of bilayer SiX (X = N, P, As and Sb). \u003cem\u003eJ. Phys.: Condens.Matter\u003c/em\u003e \u003cstrong\u003e33\u003c/strong\u003e, doi:10.1088/1361-648X/abfdf0 (2021).\u003c/li\u003e\n\u003cli\u003eJung, C. S.\u003cem\u003e et al.\u003c/em\u003e Two-dimensional GeAs with a visible range band gap. \u003cem\u003eJ. Mater. Chem. A\u003c/em\u003e \u003cstrong\u003e6\u003c/strong\u003e, 9089-9098, doi:10.1039/c8ta02676a (2018).\u003c/li\u003e\n\u003cli\u003eLi, H.\u003cem\u003e et al.\u003c/em\u003e Experimental Realization and Phase Engineering of a Two-Dimensional SnSb Binary Honeycomb Lattice. \u003cem\u003eACS. Nano.\u003c/em\u003e \u003cstrong\u003e15\u003c/strong\u003e, 16335-16343, doi:10.1021/acsnano.1c05583 (2021).\u003c/li\u003e\n\u003cli\u003eBarreteau, C., Michon, B., Besnard, C. \u0026amp; Giannini, E. High-pressure melt growth and transport properties of SiP, SiAs, GeP, and GeAs 2D layered semiconductors. \u003cem\u003eJ. Cryst. Growth\u003c/em\u003e \u003cstrong\u003e443\u003c/strong\u003e, 75-80, doi:https://doi.org/10.1016/j.jcrysgro.2016.03.019 (2016).\u003c/li\u003e\n\u003cli\u003eMotamarri, P.\u003cem\u003e et al.\u003c/em\u003e DFT-FE \u0026ndash; A massively parallel adaptive finite-element code for large-scale density functional theory calculations. \u003cem\u003eComput. Phys. Commun.\u003c/em\u003e \u003cstrong\u003e246\u003c/strong\u003e, 106853, doi:https://doi.org/10.1016/j.cpc.2019.07.016 (2020).\u003c/li\u003e\n\u003cli\u003eChen, X.-B. \u0026amp; Duan, W.-H. Quantum thermal transport and spin thermoelectrics in low-dimensional nano systems: application of nonequilibrium Green\u0026apos;s function method. \u003cem\u003eActa Phys. Sin.\u003c/em\u003e \u003cstrong\u003e64\u003c/strong\u003e, 186302-186302, doi:10.7498/aps.64.186302 (2015).\u003c/li\u003e\n\u003cli\u003eTaylor, J., Guo, H. \u0026amp; Wang, J. Ab initio modeling of open systems: Charge transfer, electron conduction, and molecular switching of a C\u003csub\u003e60\u003c/sub\u003e device. \u003cem\u003ePhys. Rev. B\u003c/em\u003e \u003cstrong\u003e63\u003c/strong\u003e, 121104, doi:10.1103/PhysRevB.63.121104 (2001).\u003c/li\u003e\n\u003cli\u003eBrandbyge, M., Mozos, J.-L., Ordej\u0026oacute;n, P., Taylor, J. \u0026amp; Stokbro, K. Density-functional method for nonequilibrium electron transport. \u003cem\u003ePhys. Rev. B\u003c/em\u003e \u003cstrong\u003e65\u003c/strong\u003e, 165401, doi:10.1103/PhysRevB.65.165401 (2002).\u003c/li\u003e\n\u003cli\u003eJos\u0026eacute;, M. S.\u003cem\u003e et al.\u003c/em\u003e The SIESTA method for ab initio order-N materials simulation. \u003cem\u003eJ. Phys.: Condens.Matter\u003c/em\u003e \u003cstrong\u003e14\u003c/strong\u003e, 2745, doi:10.1088/0953-8984/14/11/302 (2002).\u003c/li\u003e\n\u003cli\u003ePerdew, J. P.\u003cem\u003e et al.\u003c/em\u003e Atoms, molecules, solids, and surfaces: Applications of the generalized gradient approximation for exchange and correlation. \u003cem\u003ePhys. Rev. B\u003c/em\u003e \u003cstrong\u003e46\u003c/strong\u003e, 6671-6687, doi:10.1103/PhysRevB.46.6671 (1992).\u003c/li\u003e\n\u003cli\u003ePerdew, J. P., Burke, K. \u0026amp; Ernzerhof, M. Generalized gradient approximation made simple. \u003cem\u003ePhys. Rev. Lett.\u003c/em\u003e \u003cstrong\u003e77\u003c/strong\u003e, 3865-3868, doi:10.1103/PhysRevLett.77.3865 (1996).\u003c/li\u003e\n\u003cli\u003eHamann, D. R. Erratum: Optimized norm-conserving vanderbilt pseudopotentials [Phys. Rev. B 88, 085117 (2013)]. \u003cem\u003ePhys. Rev. B\u003c/em\u003e \u003cstrong\u003e95\u003c/strong\u003e, 239906, doi:10.1103/PhysRevB.95.239906 (2017).\u003c/li\u003e\n\u003cli\u003eChen, J., Hu, Y. \u0026amp; Guo, H. First-principles analysis of photocurrent in graphene PN junctions. \u003cem\u003ePhys. Rev. B\u003c/em\u003e \u003cstrong\u003e85\u003c/strong\u003e, 155441, doi:10.1103/PhysRevB.85.155441 (2012).\u003c/li\u003e\n\u003cli\u003eZhang, L.\u003cem\u003e et al.\u003c/em\u003e Generation and transport of valley-polarized current in transition-metal dichalcogenides. \u003cem\u003ePhys. Rev. B\u003c/em\u003e \u003cstrong\u003e90\u003c/strong\u003e, 195428, doi:10.1103/PhysRevB.90.195428 (2014).\u003c/li\u003e\n\u003cli\u003eHenrickson, L. E. Nonequilibrium photocurrent modeling in resonant tunneling photodetectors. \u003cem\u003eJ. Appl. Phys.\u003c/em\u003e \u003cstrong\u003e91\u003c/strong\u003e, 6273-6281, doi:10.1063/1.1473677 J Journal of Applied Physics (2002).\u003c/li\u003e\n\u003cli\u003eH\u0026uuml;bner, J.\u003cem\u003e et al.\u003c/em\u003e Direct observation of optically injected spin-polarized currents in semiconductors. \u003cem\u003ePhys. Rev. Lett.\u003c/em\u003e \u003cstrong\u003e90\u003c/strong\u003e, 216601, doi:10.1103/PhysRevLett.90.216601 (2003).\u003c/li\u003e\n\u003cli\u003eMurakami, S., Nagaosa, N. \u0026amp; Zhang, S.-C. Dissipationless quantum spin current at room temperature. \u003cstrong\u003e301\u003c/strong\u003e, 1348-1351, doi:doi:10.1126/science.1087128 (2003).\u003c/li\u003e\n\u003cli\u003eWang, H.\u003cem\u003e et al.\u003c/em\u003e Electrical transport properties of FeSe single crystal under high magnetic field. \u003cem\u003eSci. China: Phys., Mech. Astron.\u003c/em\u003e \u003cstrong\u003e64\u003c/strong\u003e, 287411, doi:10.1007/s11433-021-1702-4 (2021).\u003c/li\u003e\n\u003cli\u003eShukla, V., Grigoriev, A., Jena, N. K. \u0026amp; Ahuja, R. Strain controlled electronic and transport anisotropies in two-dimensional borophene sheets. \u003cem\u003ePhys. Chem. Chem. Phys.\u003c/em\u003e \u003cstrong\u003e20\u003c/strong\u003e, 22952-22960, doi:10.1039/c8cp03815e (2018).\u003c/li\u003e\n\u003cli\u003eDas, B. \u0026amp; Mahapatra, S. A predictive model for high-frequency operation of two-dimensional transistors from first-principles. \u003cem\u003eJ. Appl. Phys.\u003c/em\u003e \u003cstrong\u003e128\u003c/strong\u003e, doi:10.1063/5.0030633 (2020).\u003c/li\u003e\n\u003cli\u003eYang, Y.-Y., Gong, P., Ma, W.-D., Hao, R. \u0026amp; Fang, X.-Y. Effects of substitution of group-V atoms for carbon or silicon atoms on optical properties of silicon carbide nanotubes*. \u003cem\u003eChin. Phys. B\u003c/em\u003e \u003cstrong\u003e30\u003c/strong\u003e, 067803, doi:10.1088/1674-1056/abdb1e (2021).\u003c/li\u003e\n\u003cli\u003ePalsgaard, M., Markussen, T., Gunst, T., Brandbyge, M. \u0026amp; Stokbro, K. Efficient first-principles calculation of phonon-assisted photocurrent in large-scale solar-cell devices. \u003cem\u003ePhys. Rev. Appl.\u003c/em\u003e \u003cstrong\u003e10\u003c/strong\u003e, 014026, doi:10.1103/PhysRevApplied.10.014026 (2018).\u003c/li\u003e\n\u003cli\u003ePalsgaard, M., Gunst, T., Markussen, T., Thygesen, K. S. \u0026amp; Brandbyge, M. Stacked janus device concepts: abrupt pn-junctions and cross-plane channels. \u003cem\u003eNano Lett.\u003c/em\u003e \u003cstrong\u003e18\u003c/strong\u003e, 7275-7281, doi:10.1021/acs.nanolett.8b03474 (2018).\u003c/li\u003e\n\u003cli\u003eDas, B. \u0026amp; Mahapatra, S. An atom-to-circuit modeling approach to all-2D metal\u0026ndash;insulator\u0026ndash;semiconductor field-effect transistors. \u003cem\u003enpj 2D Mater. Appl.\u003c/em\u003e \u003cstrong\u003e2\u003c/strong\u003e, 28, doi:10.1038/s41699-018-0073-3 (2018).\u003c/li\u003e\n\u003cli\u003eTaylor, J., Guo, H. \u0026amp; Wang, J. Ab initio modeling of quantum transport properties of molecular electronic devices. \u003cem\u003ePhys. Rev. B\u003c/em\u003e \u003cstrong\u003e63\u003c/strong\u003e, 245407, doi:10.1103/PhysRevB.63.245407 (2001).\u003c/li\u003e\n\u003cli\u003eWaldron, D., Liu, L. \u0026amp; Guo, H. Ab initio simulation of magnetic tunnel junctions. \u003cem\u003eNanotechnol.\u003c/em\u003e \u003cstrong\u003e18\u003c/strong\u003e, 424026, doi:10.1088/0957-4484/18/42/424026 (2007).\u003c/li\u003e\n\u003cli\u003eStradi, D., Martinez, U., Blom, A., Brandbyge, M. \u0026amp; Stokbro, K. General atomistic approach for modeling metal-semiconductor interfaces using density functional theory and nonequilibrium Green\u0026apos;s function. \u003cem\u003ePhys. Rev. B\u003c/em\u003e \u003cstrong\u003e93\u003c/strong\u003e, 155302, doi:10.1103/PhysRevB.93.155302 (2016).\u003c/li\u003e\n\u003cli\u003eLee, I.-H. \u0026amp; Martin, R. M. Applications of the generalized-gradient approximation to atoms, clusters, and solids. \u003cem\u003ePhys. Rev. B\u003c/em\u003e \u003cstrong\u003e56\u003c/strong\u003e, 7197-7205, doi:10.1103/PhysRevB.56.7197 (1997).\u003c/li\u003e\n\u003cli\u003eChai, L. Recent progress in density functional theory and its numerical methods. \u003cem\u003eProg. Chem.\u003c/em\u003e \u003cstrong\u003e17\u003c/strong\u003e, 192-202 (2005).\u003c/li\u003e\n\u003c/ol\u003e"}],"fulltextSource":"","fullText":"","funders":[],"hasAdminPriorityOnWorkflow":false,"hasManuscriptDocX":true,"hasOptedInToPreprint":true,"hasPassedJournalQc":"","hasAnyPriority":false,"hideJournal":false,"highlight":"","institution":"","isAcceptedByJournal":true,"isAuthorSuppliedPdf":false,"isDeskRejected":"","isHiddenFromSearch":false,"isInQc":false,"isInWorkflow":false,"isPdf":false,"isPdfUpToDate":true,"isWithdrawnOrRetracted":false,"journal":{"display":true,"email":"[email protected]","identity":"scientific-reports","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":false,"externalIdentity":"scirep","sideBox":"Learn more about [Scientific Reports](http://www.nature.com/srep/)","snPcode":"","submissionUrl":"","title":"Scientific Reports","twitterHandle":"","acdcEnabled":true,"dfaEnabled":true,"editorialSystem":"stoa","reportingPortfolio":"Scientific Reports","inReviewEnabled":true,"inReviewRevisionsEnabled":true},"keywords":"Two-dimensional materials, Ge2Y2 monolayers, Nanodevices, Transport properties","lastPublishedDoi":"10.21203/rs.3.rs-5364646/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-5364646/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"\u003cp\u003eSeveral conceptual nanodevices based on the four-atom-layer \u003cem\u003eα\u003c/em\u003e- and \u003cem\u003eβ\u003c/em\u003e-Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e are constructed, and their electronic transport and photoelectronic properties are revealed by means of first-principles calculations. Our results demonstrate that the Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e-based \u003cem\u003ep-n\u003c/em\u003e junction diodes show a great rectifying effect with high rectification ratio. Their \u003cem\u003ep-i-n\u003c/em\u003e junction transistors show a field-effect behavior with better rectifying effect and stronger electronical anisotropy. Moreover, the Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e monolayers have strong photoelectronic response in the visible light region, displaying excellent photoelectronic properties in the photovoltaic materials and photoelectronic transistors. Our findings uncover the multi-functional features of four-atom-layer Ge\u003csub\u003e2\u003c/sub\u003eY\u003csub\u003e2\u003c/sub\u003e monolayers, promising their extensive applications as candidates for future flexible semiconductor devices.\u003c/p\u003e","manuscriptTitle":"Study on Electronic Transport and Optoelectronic Properties of Semiconductor 2D Ge₂Y₂ (Y = As, P, N)","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2024-11-28 07:47:56","doi":"10.21203/rs.3.rs-5364646/v1","editorialEvents":[{"type":"communityComments","content":0},{"type":"decision","content":"Revision requested","date":"2024-12-11T08:35:41+00:00","index":"","fulltext":""},{"type":"editorInvitedReview","content":"","date":"2024-12-06T16:26:33+00:00","index":"hide","fulltext":""},{"type":"editorInvitedReview","content":"","date":"2024-12-06T03:21:57+00:00","index":"hide","fulltext":""},{"type":"reviewerAgreed","content":"119797228635361853732015261317268788332","date":"2024-11-25T12:35:47+00:00","index":"hide","fulltext":""},{"type":"reviewerAgreed","content":"127110852847402763759679495133161555360","date":"2024-11-21T19:38:14+00:00","index":"hide","fulltext":""},{"type":"reviewersInvited","content":"","date":"2024-11-21T16:36:08+00:00","index":"","fulltext":""},{"type":"editorAssigned","content":"","date":"2024-11-12T17:26:15+00:00","index":"","fulltext":""},{"type":"editorInvited","content":"","date":"2024-11-12T17:14:46+00:00","index":"","fulltext":""},{"type":"checksComplete","content":"","date":"2024-11-11T12:20:44+00:00","index":"","fulltext":""},{"type":"submitted","content":"Scientific Reports","date":"2024-10-31T03:46:00+00:00","index":"","fulltext":""}],"status":"published","journal":{"display":true,"email":"[email protected]","identity":"scientific-reports","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":false,"externalIdentity":"scirep","sideBox":"Learn more about [Scientific Reports](http://www.nature.com/srep/)","snPcode":"","submissionUrl":"","title":"Scientific Reports","twitterHandle":"","acdcEnabled":true,"dfaEnabled":true,"editorialSystem":"stoa","reportingPortfolio":"Scientific Reports","inReviewEnabled":true,"inReviewRevisionsEnabled":true}}],"origin":"","ownerIdentity":"02273679-ce7d-4362-9feb-4c6a55969b8d","owner":[],"postedDate":"November 28th, 2024","published":true,"recentEditorialEvents":[],"rejectedJournal":[],"revision":"","amendment":"","status":"published-in-journal","subjectAreas":[{"id":40717772,"name":"Physical sciences/Physics/Condensed matter physics/Electronic properties and materials"},{"id":40717773,"name":"Physical sciences/Physics/Condensed matter physics/Semiconductors"}],"tags":[],"updatedAt":"2025-05-05T16:07:32+00:00","versionOfRecord":{"articleIdentity":"rs-5364646","link":"https://doi.org/10.1038/s41598-025-98824-0","journal":{"identity":"scientific-reports","isVorOnly":false,"title":"Scientific Reports"},"publishedOn":"2025-04-29 15:57:18","publishedOnDateReadable":"April 29th, 2025"},"versionCreatedAt":"2024-11-28 07:47:56","video":"","vorDoi":"10.1038/s41598-025-98824-0","vorDoiUrl":"https://doi.org/10.1038/s41598-025-98824-0","workflowStages":[]},"version":"v1","identity":"rs-5364646","journalConfig":"researchsquare"},"__N_SSP":true},"page":"/article/[identity]/[[...version]]","query":{"redirect":"/article/rs-5364646","identity":"rs-5364646","version":["v1"]},"buildId":"qtupq5eGEP_6zYnWcrvyt","isFallback":false,"isExperimentalCompile":false,"dynamicIds":[84888],"gssp":true,"scriptLoader":[]}