Orbital to charge current conversion in copper oxide heterostructures.

Orbital to charge current conversion in copper oxide heterostructures. | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Article Orbital to charge current conversion in copper oxide heterostructures. Smiljan Vojkovic, Khris Cancino, Gerardo Rodríguez, Erick Burgos-Parra, and 8 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-9372414/v1 This work is licensed under a CC BY 4.0 License Status: Under Review Version 1 posted 8 You are reading this latest preprint version Abstract We report orbital-to-charge current conversion in Co40Fe40B20|CuO bilayers as a function of CuO thickness, using orbital pumping driven by ferromagnetic resonance. The dynamical injection of orbital angular momentum into the CuO layer generates a transverse voltage via the inverse orbital Hall effect (IOHE). By systematically varying the CuO thickness from 2 to 30 nm, we observe a pronounced thickness dependence of the IOHE-induced voltage, revealing efficient orbital-to-charge conversion. The experimental results are quantitatively described by an orbital diffusion model, yielding an orbital diffusion length of approximately 6 nm and an orbital Hall angle of about 2%. These findings demonstrate robust diffusive orbital transport in CuO and highlight transition-metal oxides as promising platforms for orbitronic devices. Physical sciences/Materials science Physical sciences/Nanoscience and technology Physical sciences/Physics Full Text Additional Declarations No competing interests reported. Cite Share Download PDF Status: Under Review Version 1 posted Reviews received at journal 08 May, 2026 Reviewers agreed at journal 04 May, 2026 Reviewers agreed at journal 21 Apr, 2026 Reviewers invited by journal 21 Apr, 2026 Editor assigned by journal 21 Apr, 2026 Editor invited by journal 21 Apr, 2026 Submission checks completed at journal 16 Apr, 2026 First submitted to journal 16 Apr, 2026 You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-9372414","acceptedTermsAndConditions":true,"allowDirectSubmit":false,"archivedVersions":[],"articleType":"Article","associatedPublications":[],"authors":[{"id":626955994,"identity":"c709940b-c2a5-4505-b823-6579c4cd3008","order_by":0,"name":"Smiljan Vojkovic","email":"","orcid":"","institution":"Pontificia Universidad Católica de Chile","correspondingAuthor":false,"prefix":"","firstName":"Smiljan","middleName":"","lastName":"Vojkovic","suffix":""},{"id":626955996,"identity":"d3f5615b-fc43-4a0a-9de8-b697b5ea1d1b","order_by":1,"name":"Khris Cancino","email":"","orcid":"","institution":"University of Santiago Chile","correspondingAuthor":false,"prefix":"","firstName":"Khris","middleName":"","lastName":"Cancino","suffix":""},{"id":626955997,"identity":"30a5ba8e-95af-4a11-b67a-42e33d995e90","order_by":2,"name":"Gerardo Rodríguez","email":"","orcid":"","institution":"University of Santiago Chile","correspondingAuthor":false,"prefix":"","firstName":"Gerardo","middleName":"","lastName":"Rodríguez","suffix":""},{"id":626955999,"identity":"9ba93522-3b7e-4db7-acf9-5ab4cde9defa","order_by":3,"name":"Erick Burgos-Parra","email":"","orcid":"","institution":"University of Santiago Chile","correspondingAuthor":false,"prefix":"","firstName":"Erick","middleName":"","lastName":"Burgos-Parra","suffix":""},{"id":626956000,"identity":"c94a2437-580a-41f9-acd6-f6471bbd97e3","order_by":4,"name":"Guillermo Herrera","email":"","orcid":"","institution":"University of Santiago Chile","correspondingAuthor":false,"prefix":"","firstName":"Guillermo","middleName":"","lastName":"Herrera","suffix":""},{"id":626956001,"identity":"fe8a6e6a-2601-44d7-a076-456764aeda3c","order_by":5,"name":"Claudio González-Fuentes","email":"","orcid":"","institution":"Pontificia Universidad Católica de Chile","correspondingAuthor":false,"prefix":"","firstName":"Claudio","middleName":"","lastName":"González-Fuentes","suffix":""},{"id":626956003,"identity":"a32f3782-8cbc-4c7e-830e-51e84592335d","order_by":6,"name":"Juan Luis Palma","email":"","orcid":"","institution":"Universidad Central de Chile","correspondingAuthor":false,"prefix":"","firstName":"Juan","middleName":"Luis","lastName":"Palma","suffix":""},{"id":626956004,"identity":"556c40f0-fbb8-4fc4-bda9-ffa441a9e340","order_by":7,"name":"T.V.M. 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The dynamical injection of orbital angular momentum into the CuO layer generates\na transverse voltage via the inverse orbital Hall effect (IOHE). By systematically varying the CuO thickness from 2 to 30 nm, we\nobserve a pronounced thickness dependence of the IOHE-induced voltage, revealing efficient orbital-to-charge conversion.\nThe experimental results are quantitatively described by an orbital diffusion model, yielding an orbital diffusion length of\napproximately 6 nm and an orbital Hall angle of about 2%. 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