Probing the Metal-TMDC Interface and Substrate Impact via Raman and Photoluminescence Spectroscopy

Two-dimensional (2D) semiconductors like Transitional Metal Dichalcogenides (TMDCs) have attracted strong research interest in the last decade. Unlike the more celebrated 2D material graphene, TMDCs like molybdenum disulfide(MoS2) possess bandgap. The number of layers critically depends on the band structure of MoS2. For example, it is indirect for bulk MoS2. However, it becomes direct bandgap material for a monolayer MoS2. Monolayer MoS2, therefore, becomes an important material for photoelectronic devices. An essential aspect of such devices is the metal-semiconductor junction. Metal-TMDC junction is, therefore, a well-studied interface due to its importance for 2D materials-based photoelectronic devices. Most importantly, it can be flexible, stretchable to it’s length, and bent to a large angle. We used metals like Au and Al to interface with TMDs like MoS2. We used silicon and PDMS as substrates. So, we have to focus on investigating the relative properties of various TMDCs. We see change in band energy and vibrational modes via Photoluminiscence and Raman spectroscopy as shown in the article. However, certain aspects are yet to be explored, for example, how this interface behaves in the presence of strain.