Linearly Dispersing Carriers in Atomically Thin Antiferromagnetic NdTe3

Linearly Dispersing Carriers in Atomically Thin Antiferromagnetic NdTe3 | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Article Linearly Dispersing Carriers in Atomically Thin Antiferromagnetic NdTe3 Oleksandr Zheliuk, Yuliia Kreminska, Davide Pizzirani, Claudius Mueller, and 11 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-8040002/v1 This work is licensed under a CC BY 4.0 License Status: Under Review Version 1 posted You are reading this latest preprint version Abstract The search for materials supporting ultrafast charge transport has been a longstanding goal in nanoelectronics. Since the isolation of graphene1, numerous efforts have focused on enlarging the class of linearly dispersive systems within the broader library of layered materials and on scaling their electronic properties down to the unit-cell limit. Here, we demonstrate that atomically thin layers can be isolated from antiferromagnetic NdTe3 down to a bilayer unit cell. This previously inaccessible preparation is enabled by Au-assisted exfoliation2,3. Magnetotransport measurements reveal that Shubnikov-de Haas oscillations persist in all thicknesses, indicating robust quantum phase coherence. Moreover, despite a suppression of the residual resistivity ratio and magnetoresistance compared to the bulk, we observe no significant modifications to the electronic structure, with dispersive linear bands persisting across all thicknesses. We anticipate that the observation of multiple spin-zero effects from distinct Fermi pockets further points to an enhanced effective g-factor that can be extended to other members of the RTe3 family. Physical sciences/Nanoscience and technology/Nanoscale devices/Electronic devices Physical sciences/Materials science/Condensed-matter physics/Electronic properties and materials Full Text Additional Declarations There is NO Competing Interest. Supplementary Files Suplementaryinformation.pdf Supplementary Material Cite Share Download PDF Status: Under Review Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. 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Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-8040002","acceptedTermsAndConditions":true,"allowDirectSubmit":false,"archivedVersions":[],"articleType":"Article","associatedPublications":[],"authors":[{"id":548739704,"identity":"05726d1b-6559-4595-af0c-c124f8f7b07f","order_by":0,"name":"Oleksandr 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