Oscillations of Longitudinal Magnetoresistance in Thin Semiconductor Films With a Parabolic Potential Profile

Oscillations of Longitudinal Magnetoresistance in Thin Semiconductor Films With a Parabolic Potential Profile | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Oscillations of Longitudinal Magnetoresistance in Thin Semiconductor Films With a Parabolic Potential Profile Khanlar Hasanov, Jahangir Huseinov, Vusala Dadasheva, Aysel Hamzaeva, and 2 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-7037077/v1 This work is licensed under a CC BY 4.0 License Status: Published Journal Publication published 08 Apr, 2026 Read the published version in Journal of Low Temperature Physics → Version 1 posted 10 You are reading this latest preprint version Abstract This paper presents a theoretical study of the longitudinal magnetoresistance in thin semiconductor films with a parabolic potential profile under the influence of a strong quantizing magnetic field. The case of a degenerate electron gas and weak conduction band filling is considered. Based on the kinetic equation, an expression for the longitudinal conductivity is derived, taking into account the spin splitting of Landau levels. A numerical analysis of the resistance behavior for GaAs- and InSb-based structures at a temperature of 4.2 K is performed. It is established that quantum oscillations of magnetoresistance are observed in such nanostructures, and negative longitudinal magnetoresistance occurs even under strong degeneracy conditions. This behavior is caused by quantization of motion in the transverse direction and spin splitting, which makes the system promising for research in the fields of spintronics and magnetoelectronics. nanostructures semiconductor films quantum magnetoresistance spin splitting longitudinal magnetic field Landau levels degenerate electron gas parabolic potential kinetic equation Full Text Additional Declarations No competing interests reported. Cite Share Download PDF Status: Published Journal Publication published 08 Apr, 2026 Read the published version in Journal of Low Temperature Physics → Version 1 posted Editorial decision: Revision requested 09 Sep, 2025 Reviews received at journal 09 Sep, 2025 Reviewers agreed at journal 30 Aug, 2025 Reviews received at journal 27 Jul, 2025 Reviewers agreed at journal 16 Jul, 2025 Reviewers agreed at journal 14 Jul, 2025 Reviewers invited by journal 14 Jul, 2025 Editor assigned by journal 04 Jul, 2025 Submission checks completed at journal 04 Jul, 2025 First submitted to journal 03 Jul, 2025 You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. 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