Ultrahigh Permittivity, Ultralow Loss and Stability in (In0.5Ta0.5)0.1Ti0.9O2 Ceramics With Temperature Range From -100 to 235 °C

Dielectric materials with excellent dielectric properties are being promoted in requirements of microelectronic devices. In this study, (In 0.5 Ta 0.5 ) 0.1 Ti 0.9 O 2 ceramics were achieved by a solid-state reaction with reducing atmosphere of N 2 . Also, dense microstructure, ultrahigh permittivity (ε r = 1.18 × 10 5 ) and ultralow dielectric loss (tanδ = 0.0072) were demonstrated at1 kHz. Interestingly enough, the temperature coefficient of permittivity which satisfies X9D (-100 °C - 235 °C, Δε r /ε 25°C < ± 3.3 %) maintained stability at 1 kHz, and the dielectric mechanism could be connected to the electron-pinned defect dipoles (EPDD), which has favourable potential applications in electronic devices.