Photoelectric Characterization of Intended Source UTBB 1T FDSOI Based Image Sensor

Abstract This paper presents the photoelectrical performance evaluation of proposed intended source Ultra Thin Body Bias (UTBB) 1T-FDSOI based image sensor and also a comparative analysis has done with conventional 1T-UTBB based image sensor [1]. The photoelectrical conversion in proposed image sensor is achieved by utilizing back biasing in intended source UTBB FDSOI based MOSFET. In the proposed intended source Ultra Thin Body Bias (UTBB) 1T-FDSOI based image sensor, the photoelectrical conversion is done within the substrate region (well region) and that signal is read out by MOSFET placed on SOI substrate. The comparative analysis between proposed image sensor and conventional 1T-UTBB based image sensor has performed on the basis of various parameters such as back-bias voltage, thickness of buried oxide (BOX) layer and doping concentration. In this investigation the proposed image sensor has found better light sensitivity in contrast with conventional image sensor. The performance evaluation of proposed image sensor has done by TCAD simulations.