Effects of quantum confinement effect on intrinsic gate capacitance in depleted state of junctionless surrounding-gate nanosheet NMOSFET considering drain/source extension zones

Effects of quantum confinement effect on intrinsic gate capacitance in depleted state of junctionless surrounding-gate nanosheet NMOSFET considering drain/source extension zones | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Effects of quantum confinement effect on intrinsic gate capacitance in depleted state of junctionless surrounding-gate nanosheet NMOSFET considering drain/source extension zones L J Xu This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-7390220/v1 This work is licensed under a CC BY 4.0 License Status: Under Revision Version 1 posted 12 You are reading this latest preprint version Abstract In an effort to modeling of junctionless (JL) surrounding-gate (SG) nanosheet MOSFET more precisely, a model for computing intrinsic gate capacitance in depleted state of the above-mentioned device is built for the first time. The model considers drain/source extension zones and quantum confinement effect, it is identified by the simulation results of Sentaurus TCAD. Alterations of intrinsic total gate capacitance, gate-to-drain capacitance, gate-to-source capacitance with the channel width, height, doping concentration, the gate bias, the drain bias including and not including quantum confinement effect are researched, respectively. The results reveal effects of quantum confinement effect on intrinsic total gate capacitance, gate-to-drain capacitance, gate-to-source capacitance. The model will provide quantum corrections of intrinsic gate capacitance in the above-mentioned device. quantum confinement effect drain/source extension zones junctionless surrounding-gate nanosheet NMOSFET intrinsic total gate capacitance gate-to-drain capacitance gate-to-source capacitance Full Text Additional Declarations No competing interests reported. Cite Share Download PDF Status: Under Revision Version 1 posted Editorial decision: Revision requested 31 Oct, 2025 Reviews received at journal 24 Sep, 2025 Reviews received at journal 16 Sep, 2025 Reviews received at journal 07 Sep, 2025 Reviewers agreed at journal 07 Sep, 2025 Reviewers agreed at journal 07 Sep, 2025 Reviewers agreed at journal 05 Sep, 2025 Reviewers agreed at journal 05 Sep, 2025 Reviewers invited by journal 05 Sep, 2025 Editor assigned by journal 18 Aug, 2025 Submission checks completed at journal 18 Aug, 2025 First submitted to journal 16 Aug, 2025 You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. 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Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-7390220","acceptedTermsAndConditions":true,"allowDirectSubmit":false,"archivedVersions":[],"articleType":"Research Article","associatedPublications":[],"authors":[{"id":511389315,"identity":"c27be480-eb8d-4c49-ba5c-0737141b888b","order_by":0,"name":"L J Xu","email":"data:image/png;base64,iVBORw0KGgoAAAANSUhEUgAAAZAAAAAyAQMAAABI0h/eAAAABlBMVEX///8AAABVwtN+AAAACXBIWXMAAA7EAAAOxAGVKw4bAAAAs0lEQVRIiWNgGAWjYBACfmb2gw8/GPzj4Sdai2Q7T7KxRMEBOckGYrUY9DOYSfB8OGBscIBoLcwMyQYSBncSNx9P3sDwo2IbYS3mzIwHHxQYPEvcduZZAWPPmduEtVg2g21hTtx2I8eAmbGNCC0Gh0F+AWrZPINELYeNDSSI1SLZDApkgzQ5CaBfDhLlF37+48Co/GPDw9+evPHBjwoitCCBBOKjBqGFVB2jYBSMglEwQgAAP509Cn9R20IAAAAASUVORK5CYII=","orcid":"","institution":"Zhejiang Tongji Vocational College of Science and Technology","correspondingAuthor":true,"prefix":"","firstName":"L","middleName":"J","lastName":"Xu","suffix":""}],"badges":[],"createdAt":"2025-08-17 03:38:12","currentVersionCode":1,"declarations":"","doi":"10.21203/rs.3.rs-7390220/v1","doiUrl":"https://doi.org/10.21203/rs.3.rs-7390220/v1","draftVersion":[],"editorialEvents":[],"editorialNote":"","failedWorkflow":false,"files":[{"id":91149322,"identity":"b608eedf-9791-443c-a787-3764f186de2d","added_by":"auto","created_at":"2025-09-12 06:48:46","extension":"pdf","order_by":1,"title":"","display":"","copyAsset":false,"role":"manuscript-pdf","size":739266,"visible":true,"origin":"","legend":"","description":"","filename":"Manuscript.pdf","url":"https://assets-eu.researchsquare.com/files/rs-7390220/v1_covered_079d363e-c4ef-490f-a2bf-b756e7f22c32.pdf"}],"financialInterests":"No competing interests reported.","formattedTitle":"Effects of quantum confinement effect on intrinsic gate capacitance in depleted state of junctionless surrounding-gate nanosheet NMOSFET considering drain/source extension zones","fulltext":[],"fulltextSource":"","fullText":"","funders":[],"hasAdminPriorityOnWorkflow":false,"hasManuscriptDocX":false,"hasOptedInToPreprint":true,"hasPassedJournalQc":"","hasAnyPriority":false,"hideJournal":false,"highlight":"","institution":"","isAcceptedByJournal":false,"isAuthorSuppliedPdf":true,"isDeskRejected":"","isHiddenFromSearch":false,"isInQc":false,"isInWorkflow":false,"isPdf":true,"isPdfUpToDate":true,"isWithdrawnOrRetracted":false,"journal":{"display":true,"email":"[email protected]","identity":"silicon","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":false,"externalIdentity":"scon","sideBox":"Learn more about [Silicon](https://www.springer.com/journal/12633)","snPcode":"12633","submissionUrl":"https://submission.nature.com/new-submission/12633/3","title":"Silicon","twitterHandle":"","acdcEnabled":true,"dfaEnabled":true,"editorialSystem":"em","reportingPortfolio":"Springer Hybrid","inReviewEnabled":true,"inReviewRevisionsEnabled":false},"keywords":"quantum confinement effect, drain/source extension zones, junctionless surrounding-gate nanosheet NMOSFET, intrinsic total gate capacitance, gate-to-drain capacitance, gate-to-source capacitance","lastPublishedDoi":"10.21203/rs.3.rs-7390220/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-7390220/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"\u003cp\u003eIn an effort to modeling of junctionless (JL) surrounding-gate (SG) nanosheet MOSFET more precisely, a model for computing intrinsic gate capacitance in depleted state of the above-mentioned device is built for the first time. 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