Near-field Energy Transfer and Color Conversion from an InGaN/GaN Quantum-well Structure into Inserted Colloidal Quantum Dots in a Metal Nanotube

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The paper studies near-field Förster resonance energy transfer (FRET) and resulting color conversion from an InGaN/GaN quantum-well structure into colloidal quantum dots (QDs) inserted inside silver nanotubes, using Ag nanotube samples with different Ag deposition thicknesses fabricated via secondary sputtering. FRET efficiencies measured by time-resolved photoluminescence are higher when QDs are inside Ag nanotubes than when QDs are on the top surface or inserted into GaN nanoholes without Ag, with a maximum FRET efficiency at an Ag thickness of about 36 nm, attributed to stronger nanoscale cavity effects from higher dielectric-constant contrast. Similar enhancement trends for color conversion are observed via continuous photoluminescence measurements, supported by a simulation study. The paper does not explicitly discuss any limitation in the provided text, and it is presented as a preprint that has not been peer reviewed. The paper does not explicitly discuss endometriosis or adenomyosis; it was included in the corpus via a keyword match in the upstream search index.

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Abstract

Abstract A series of Ag nanotube (NT) sample with different Ag deposition thicknesses on an InGaN/GaN quantum-well (QW) structure are fabricated by using the technique of secondary sputtering for forming the Ag sidewall in a GaN surface nanohole (NH). After the insertion of the photoresist solutions of colloidal quantum dots (QDs) into the metal NTs, the efficiencies of the Förster resonance energy transfer (FRET) from QW into QD in those samples are evaluated through time-resolved photoluminescence measurement. The FRET efficiencies of the metal NT samples are higher than those with QDs on the top surface or inserted into GaN NHs (no Ag deposition). Among the metal NT samples under study, the FRET efficiency reaches a maximum when the Ag deposition thickness is ~ 36 nm. The enhancement of the FRET efficiency in a metal NT sample is mainly attributed to the higher dielectric-constant contrast between the metal NT sidewall and the medium inside the NT, leading to a stronger nanoscale-cavity effect. Based on continuous photoluminescence measurement, the similar enhancement behavior of color conversion can also be observed. A simulation study is undertaken to confirm the enhanced FRET and color conversion in a metal NT.
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Near-field Energy Transfer and Color Conversion from an InGaN/GaN Quantum-well Structure into Inserted Colloidal Quantum Dots in a Metal Nanotube | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Near-field Energy Transfer and Color Conversion from an InGaN/GaN Quantum-well Structure into Inserted Colloidal Quantum Dots in a Metal Nanotube Yu-Hao Lu, Shaobo Yang, Yueh-Chi Lee, Ching-Hao Huang, Sheng-Kai Chu, and 5 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-7081745/v1 This work is licensed under a CC BY 4.0 License Status: Posted Version 1 posted You are reading this latest preprint version Abstract A series of Ag nanotube (NT) sample with different Ag deposition thicknesses on an InGaN/GaN quantum-well (QW) structure are fabricated by using the technique of secondary sputtering for forming the Ag sidewall in a GaN surface nanohole (NH). After the insertion of the photoresist solutions of colloidal quantum dots (QDs) into the metal NTs, the efficiencies of the Förster resonance energy transfer (FRET) from QW into QD in those samples are evaluated through time-resolved photoluminescence measurement. The FRET efficiencies of the metal NT samples are higher than those with QDs on the top surface or inserted into GaN NHs (no Ag deposition). Among the metal NT samples under study, the FRET efficiency reaches a maximum when the Ag deposition thickness is ~ 36 nm. The enhancement of the FRET efficiency in a metal NT sample is mainly attributed to the higher dielectric-constant contrast between the metal NT sidewall and the medium inside the NT, leading to a stronger nanoscale-cavity effect. Based on continuous photoluminescence measurement, the similar enhancement behavior of color conversion can also be observed. A simulation study is undertaken to confirm the enhanced FRET and color conversion in a metal NT. Full Text Additional Declarations No competing interests reported. Cite Share Download PDF Status: Posted Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-7081745","acceptedTermsAndConditions":true,"allowDirectSubmit":true,"archivedVersions":[],"articleType":"Research Article","associatedPublications":[],"authors":[{"id":488853912,"identity":"3c083755-4e2b-4d4d-8c88-21f392884c97","order_by":0,"name":"Yu-Hao Lu","email":"","orcid":"","institution":"National Taiwan University","correspondingAuthor":false,"prefix":"","firstName":"Yu-Hao","middleName":"","lastName":"Lu","suffix":""},{"id":488853913,"identity":"11ec53df-f86b-4505-aec6-28c5160f6fea","order_by":1,"name":"Shaobo Yang","email":"","orcid":"","institution":"National Taiwan University","correspondingAuthor":false,"prefix":"","firstName":"Shaobo","middleName":"","lastName":"Yang","suffix":""},{"id":488853914,"identity":"7507fbc3-4160-4316-bb64-877eb6215b1d","order_by":2,"name":"Yueh-Chi Lee","email":"","orcid":"","institution":"National Taiwan University","correspondingAuthor":false,"prefix":"","firstName":"Yueh-Chi","middleName":"","lastName":"Lee","suffix":""},{"id":488853915,"identity":"0936adba-f3da-4d1d-9bc1-a6d36b97248e","order_by":3,"name":"Ching-Hao Huang","email":"","orcid":"","institution":"National Taiwan University","correspondingAuthor":false,"prefix":"","firstName":"Ching-Hao","middleName":"","lastName":"Huang","suffix":""},{"id":488853916,"identity":"6b63131e-8947-42b1-932a-23b2fed59c33","order_by":4,"name":"Sheng-Kai Chu","email":"","orcid":"","institution":"National Taiwan University","correspondingAuthor":false,"prefix":"","firstName":"Sheng-Kai","middleName":"","lastName":"Chu","suffix":""},{"id":488853917,"identity":"90b04baa-29ea-4fae-8911-5961fb2d3e01","order_by":5,"name":"Hsuan-Yu Liu","email":"","orcid":"","institution":"National Taiwan University","correspondingAuthor":false,"prefix":"","firstName":"Hsuan-Yu","middleName":"","lastName":"Liu","suffix":""},{"id":488853918,"identity":"1f8ce271-57da-4e8a-898b-628e5dd42330","order_by":6,"name":"Ting-Yan Chen","email":"","orcid":"","institution":"National Taiwan University","correspondingAuthor":false,"prefix":"","firstName":"Ting-Yan","middleName":"","lastName":"Chen","suffix":""},{"id":488853919,"identity":"8863ea40-ad02-42be-a13a-4e0ecc92b00e","order_by":7,"name":"Che-Chen Hsu","email":"","orcid":"","institution":"National Taiwan University","correspondingAuthor":false,"prefix":"","firstName":"Che-Chen","middleName":"","lastName":"Hsu","suffix":""},{"id":488853920,"identity":"e20eb1b3-819e-4e6b-8bf3-8e04166ce922","order_by":8,"name":"Yang Kuo","email":"","orcid":"","institution":"National Taiwan University","correspondingAuthor":false,"prefix":"","firstName":"Yang","middleName":"","lastName":"Kuo","suffix":""},{"id":488853921,"identity":"b90e02e3-56c5-4c5d-ae1c-123f93decae1","order_by":9,"name":"C. 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