Aspects of Silane Thermal Decomposition

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Aspects of Silane Thermal Decomposition | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Aspects of Silane Thermal Decomposition Pierre Tomasini This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-8445711/v1 This work is licensed under a CC BY 4.0 License Status: Under Review Version 1 posted 7 You are reading this latest preprint version Abstract Silicon deposition is central to monolithic device integration, yet the fundamental growth mechanisms remain incompletely rationalized. Here, silane thermal decomposition is revisited with the aim of constructing a coherent macroscopic model of silicon growth. A meta-analysis integrating conventional thermal decomposition studies with industrial CVD data provides substantial insights into the mechanism governing the heterogeneous catalysis of an ostensibly simple chemical reaction. A straightforward zero-dimensional thermodynamic model, anchored in silane decomposition and bond energetics, reproduces correctly thin film growth rate. The available evidence also points to an unsuspected multiplicity in energy of activation. The several domains are then tentatively mapped for Si{100}. The implications for industrial CVD are significant, activation-energy contrasts between facets govern selectivity, faceting, and the transition from conformal to non-conformal growth, while overly complex homogeneous gas-phase mechanisms are largely redundant for zero-dimensional thin-film modeling. G01. Fundamentals of Nucleation and Crystal Growth G02. Surfaces and Interfaces G04. Thin Films and Epitaxial Growth T02. Group IV semiconductors J01. Growth Simulation and Practice Full Text Additional Declarations No competing interests reported. Cite Share Download PDF Status: Under Review Version 1 posted Reviews received at journal 10 Feb, 2026 Reviewers agreed at journal 04 Feb, 2026 Reviewers agreed at journal 04 Feb, 2026 Reviewers invited by journal 02 Feb, 2026 Editor assigned by journal 29 Dec, 2025 Submission checks completed at journal 29 Dec, 2025 First submitted to journal 24 Dec, 2025 You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. 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