Understanding and Modelling of the Advanced Transistor at Extremely Scaled Channel Length using Virtual Source Model

Understanding and Modelling of the Advanced Transistor at Extremely Scaled Channel Length using Virtual Source Model | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Understanding and Modelling of the Advanced Transistor at Extremely Scaled Channel Length using Virtual Source Model Wei Zhang This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-7318418/v1 This work is licensed under a CC BY 4.0 License Status: Posted Version 1 posted You are reading this latest preprint version Abstract Moore's law sums up the rate of progress in information technology. However, with the increase of line density on silicon wafer, its complexity and error rate will also increase exponentially. The semiconductor devices of current technology will not work properly, and Moore's Law will come to an end. the traditional model of DriftDiffiusion Transportation Regime for long channel device is not suitable for nanometerscaled device anymore. Nowadays, the research to extend Moore’s law for extremelyscaled channel length transisitors is a big challenge. Silicon MIT Virtual Source Model provides a new model to describe the key parameters of ultra-short channel MOSFET using Quasi-Ballistic Transport Regime. And through this model, the effect of ultrashort channel NMOSFET on FD-SOI with strained silicon technology including both biaxial and uniaxial strain can be analyzed to obtain some key electrical parameters, such as effective channel electron mobility and virtual source velocity which will have a great contribution to enhance the performance of advanced transistors. The project has built several 30 nm short channel FD-SOI NMOSFET models with different types and values of strain through Sentaurus TCAD simulation tool, some measurable and fitting parameters have been obtained in our project by using VS model in MATLAB. Through the trend of function that describe key parameters versus strain value, we can explore how strained silicon on FD-SOI structure can influence the performance of ultra-short channel NMOSFET and make a prediction and benchmark for the future research aiming at improving advanced transistors performance. Electronic Materials and Devices Moore’s Law Silicon MIT Virtual Source Model ultra-short channel MOSFET FD-SOI biaxial and uniaxial strain Full Text Additional Declarations The authors declare no competing interests. Cite Share Download PDF Status: Posted Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-7318418","acceptedTermsAndConditions":true,"allowDirectSubmit":true,"archivedVersions":[],"articleType":"Research Article","associatedPublications":[],"authors":[{"id":497138257,"identity":"61e5fc19-5ab0-4389-891c-f962fe0469b5","order_by":0,"name":"Wei Zhang","email":"data:image/png;base64,iVBORw0KGgoAAAANSUhEUgAAAZAAAAAyAQMAAABI0h/eAAAABlBMVEX///8AAABVwtN+AAAACXBIWXMAAA7EAAAOxAGVKw4bAAAA3klEQVRIie3QIQvCQBTA8TcGSxPrS95XeGJ0H+Ysu7JhG0bTkmAdaPAjmBSbcsEyZr146wbFsiJ4YrKcrgneHy4c3I93PACX6xdDc/gk6r1uwdekjActiZfL0fRrwhazvq7zWGxRaLhkEth8ZSfeshwQr6J0VyTkFZUEUtpOfEw3yLM4XasE/E5uCO7tJMB02/BAClJC+3dDWPGBhGYK8FxyUpx8sweA09ROEMc3NEvur8szHWaVCEnZhflGPLo2k4jRUdS6yYY9Nv/wsbeeb0NA3oK86raZ4nK5XP/QA1nXSCSViAMlAAAAAElFTkSuQmCC","orcid":"","institution":"","correspondingAuthor":true,"prefix":"","firstName":"Wei","middleName":"","lastName":"Zhang","suffix":""}],"badges":[],"createdAt":"2025-08-07 11:47:54","currentVersionCode":1,"declarations":{"humanSubjects":false,"vertebrateSubjects":false,"conflictsOfInterestStatement":false,"humanSubjectEthicalGuidelines":false,"humanSubjectConsent":false,"humanSubjectClinicalTrial":false,"humanSubjectCaseReport":false,"vertebrateSubjectEthicalGuidelines":false},"doi":"10.21203/rs.3.rs-7318418/v1","doiUrl":"https://doi.org/10.21203/rs.3.rs-7318418/v1","draftVersion":[],"editorialEvents":[],"editorialNote":"","failedWorkflow":false,"files":[{"id":88584105,"identity":"69f39e31-80f3-483e-98b9-9b8a2a8c94f8","added_by":"auto","created_at":"2025-08-08 03:41:03","extension":"pdf","order_by":1,"title":"","display":"","copyAsset":false,"role":"manuscript-pdf","size":3202478,"visible":true,"origin":"","legend":"","description":"","filename":"FYPReport.pdf","url":"https://assets-eu.researchsquare.com/files/rs-7318418/v1_covered_04d11f91-9652-4c8e-a5da-8b05b57fcb92.pdf"}],"financialInterests":"The authors declare no competing interests.","formattedTitle":"\u003cp\u003eUnderstanding and Modelling of the Advanced Transistor at Extremely Scaled Channel Length using Virtual Source Model\u003c/p\u003e","fulltext":[],"fulltextSource":"","fullText":"","funders":[],"hasAdminPriorityOnWorkflow":false,"hasManuscriptDocX":false,"hasOptedInToPreprint":true,"hasPassedJournalQc":"","hasAnyPriority":true,"hideJournal":true,"highlight":"","institution":"National University of Singapore","isAcceptedByJournal":false,"isAuthorSuppliedPdf":true,"isDeskRejected":"","isHiddenFromSearch":false,"isInQc":false,"isInWorkflow":false,"isPdf":true,"isPdfUpToDate":true,"isWithdrawnOrRetracted":false,"journal":{"display":true,"email":"[email protected]","identity":"researchsquare","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":true,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"/submission","title":"Research Square","twitterHandle":"researchsquare","acdcEnabled":true,"dfaEnabled":false,"editorialSystem":"","reportingPortfolio":"","inReviewEnabled":false,"inReviewRevisionsEnabled":true},"keywords":"Moore’s Law, Silicon MIT Virtual Source Model, ultra-short channel MOSFET, FD-SOI, biaxial and uniaxial strain","lastPublishedDoi":"10.21203/rs.3.rs-7318418/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-7318418/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"\u003cp\u003eMoore's law sums up the rate of progress in information technology. However, \u0026nbsp;with the increase of line density on silicon wafer, its complexity and error rate will also \u0026nbsp;increase exponentially. The semiconductor devices of current technology will not work \u0026nbsp;properly, and Moore's Law will come to an end. the traditional model of DriftDiffiusion Transportation Regime for long channel device is not suitable for nanometerscaled device anymore. Nowadays, the research to extend Moore’s law for extremelyscaled channel length transisitors is a big challenge. Silicon MIT Virtual Source Model \u0026nbsp;provides a new model to describe the key parameters of ultra-short channel MOSFET \u0026nbsp;using Quasi-Ballistic Transport Regime. And through this model, the effect of ultrashort channel NMOSFET on FD-SOI with strained silicon technology including both \u0026nbsp;biaxial and uniaxial strain can be analyzed to obtain some key electrical parameters, \u0026nbsp;such as effective channel electron mobility and virtual source velocity which will have \u0026nbsp;a great contribution to enhance the performance of advanced transistors. \u0026nbsp;The project has built several 30 nm short channel FD-SOI NMOSFET models with \u0026nbsp;different types and values of strain through Sentaurus TCAD simulation tool, some \u0026nbsp;measurable and fitting parameters have been obtained in our project by using VS model \u0026nbsp;in MATLAB. Through the trend of function that describe key parameters versus strain \u0026nbsp;value, we can explore how strained silicon on FD-SOI structure can influence the \u0026nbsp;performance of ultra-short channel NMOSFET and make a prediction and benchmark \u0026nbsp;for the future research aiming at improving advanced transistors performance.\u003c/p\u003e","manuscriptTitle":"Understanding and Modelling of the Advanced Transistor at Extremely Scaled Channel Length using Virtual Source Model","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2025-08-08 03:32:51","doi":"10.21203/rs.3.rs-7318418/v1","editorialEvents":[{"type":"communityComments","content":0}],"status":"published","journal":{"display":true,"email":"[email protected]","identity":"researchsquare","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":true,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"/submission","title":"Research Square","twitterHandle":"researchsquare","acdcEnabled":true,"dfaEnabled":false,"editorialSystem":"","reportingPortfolio":"","inReviewEnabled":false,"inReviewRevisionsEnabled":true}}],"origin":"","ownerIdentity":"d806549f-e68c-482e-8afc-eed39fe073df","owner":[],"postedDate":"August 8th, 2025","published":true,"recentEditorialEvents":[],"rejectedJournal":[],"revision":"","amendment":"","status":"posted","subjectAreas":[{"id":52811101,"name":"Electronic Materials and Devices"}],"tags":[],"updatedAt":"2025-08-08T03:32:51+00:00","versionOfRecord":[],"versionCreatedAt":"2025-08-08 03:32:51","video":"","vorDoi":"","vorDoiUrl":"","workflowStages":[]},"version":"v1","identity":"rs-7318418","journalConfig":"researchsquare"},"__N_SSP":true},"page":"/article/[identity]/[[...version]]","query":{"redirect":"/article/rs-7318418","identity":"rs-7318418","version":["v1"]},"buildId":"8U1c8b4HqxoKbykW_rLl7","isFallback":false,"isExperimentalCompile":false,"dynamicIds":[84888],"gssp":true,"scriptLoader":[]}