In situ growth of graphene catalyzed by phase-change material at 400 oC for wafer-scale optoelectronic device application

Abstract The use of metal foil catalysts in chemical vapor deposition of graphene films makes graphene transfer an ineluctable part in graphene device fabrication, which greatly limits the industrialization. Here, an oxide phase-change material (V2O5) was found to have the same catalytic effect on graphene growth as conventional metals. A uniform large-area graphene film can be obtained on a 10 nm V2O5 film. Density functional theory was used to quantitatively analyze the catalytic effect of V2O5. Due to the high resistance property of V2O5 at room temperature, the obtained graphene can be directly used in devices with the V2O5 as an intercalation layer. A wafer-scale graphene-V2O5-Si Schottky photodetector array was successfully fabricated. Illuminated by a 792 nm laser, the responsivity of the photodetector can reach 266 mA/W at 0 V bias and 420 mA/W at 2 V. The transfer-free device fabrication process enables high feasibility in industrialization.