Atomic-resolution scanning transmission electron microscope imaging and electron beam-induced current measurements in GaAs Nanowire p-i-n Diodes

Measuring the current induced by the electron beam in an electron microscope is an approach that is used to map the generation and collection of charge carriers in the presence of an internal electric field in semiconductor devices. Here, we demonstrate that EBIC measurements can be conducted simultaneously with atomic-resolution high-angle annular dark field imaging in an aberration-corrected scanning transmission electron microscopy using a GaAs p-i-n nanowire diode. We explore the effects of the significantly smaller profile of the 200 kV electron probe within the sample compared to the SEM configuration. We further demonstrate that the effects of electron beam induced point defects and surface passivation layers can be directly determined using the STEM-EBIC approach.