A Reliable and Manufacturable Method to Induce a Stress of GPa on a P-Channel MOSFET in High Volume Manufacturing

Arghavani, R., Xia, L., Thompson, S.E., M'Saad, H., Mascarenhas, A., Karunasiri, G., Balseanu, M.
2006 · W7005513122
article OA: closed CC0 Metadata only
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Abstract

The article of record as published may be found at http://dx.doi.org/10.1109/LED.2005.862277

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