Dynamic Waveform-Controlled Ultra-High Frequency Pulse Power System Enabled by SiC MOSFETs: Design and Welding Applications | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Dynamic Waveform-Controlled Ultra-High Frequency Pulse Power System Enabled by SiC MOSFETs: Design and Welding Applications Jianwen Wu, Wenyan Fan, Ruiqiang Lu, Bingfeng Li, Yihui Li, Xinshen Huang, and 4 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-6676002/v1 This work is licensed under a CC BY 4.0 License Status: Under Review Version 1 posted 5 You are reading this latest preprint version Abstract Conventional pulse power systems (PPS) suffer from inflexible parameter control and limited switching frequencies due to silicon-based devices and fixed modulation designs. This study presents an ultra-high frequency pulse power system (UF-PPS) based on silicon carbide (SiC) MOSFETs and adaptive waveform modulation. The system achieves a switching frequency of 200 kHz through a full-bridge inverter architecture and ARM-based digital control, enabling dynamic adjustments of pulse waveforms, including trapezoidal, sinusoidal, and composite modes, with adjustable amplitude from 50 to 400 A and frequency from 10 to 30 kHz. Experimental results demonstrate enhanced dynamic performance, such as a rise time of 119 μs and fall time of 294 μs, surpassing conventional IGBT-based systems by over 50%. The UF-PPS is validated in advanced tungsten inert gas welding of Inconel 718 superalloy, where increasing the proportion of ultra-high frequency pulse groups reduces the average grain size by 45% from 107.84 μm to 59.03 μm. This innovation provides a versatile solution for high-precision energy control in advanced manufacturing, significantly improving process adaptability and microstructure refinement. SiC MOSFET Waveform Modulation Ultra-High Frequency Pulse Welding Application Full Text Cite Share Download PDF Status: Under Review Version 1 posted Reviewers agreed at journal 04 Aug, 2025 Reviewers invited by journal 03 Jun, 2025 Editor invited by journal 29 May, 2025 Editor assigned by journal 28 May, 2025 First submitted to journal 20 May, 2025 You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. 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Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-6676002","acceptedTermsAndConditions":true,"allowDirectSubmit":false,"archivedVersions":[],"articleType":"Research Article","associatedPublications":[],"authors":[{"id":466029185,"identity":"fa21c597-b48a-4a06-85a6-7bea072cb54d","order_by":0,"name":"Jianwen Wu","email":"data:image/png;base64,iVBORw0KGgoAAAANSUhEUgAAAZAAAAAyAQMAAABI0h/eAAAABlBMVEX///8AAABVwtN+AAAACXBIWXMAAA7EAAAOxAGVKw4bAAAAzElEQVRIiWNgGAWjYPCCBAY+BgbGBwkVNUQpZ2wAaWFjYGA2eHDmGGla2CQftjATVi/ffsb84Y+KNDk2iRyzisQGNgb+9u4EvFoMzuQYNvOcyTEGabmRuEOGQeLM2Q34tUjwGDYztlUktkmDtJxhA4rk4tciP4PHsPEnVEtBYhszYS0MN3gMG3jbcsBaGIjSYnAmrXA2z5k0Yzb5Z8USCWeO8RD0i3z74Q0ff1Qky/HzHN4IZNTI8bf3EnAYOuAhTfkoGAWjYBSMAqwAAO4oRCaH8g1VAAAAAElFTkSuQmCC","orcid":"","institution":"Guangzhou customs technical center","correspondingAuthor":true,"prefix":"","firstName":"Jianwen","middleName":"","lastName":"Wu","suffix":""},{"id":466029186,"identity":"d8cb1c8c-4ab9-425f-9b78-04534ffa22e7","order_by":1,"name":"Wenyan Fan","email":"","orcid":"","institution":"Guangzhou customs technical center","correspondingAuthor":false,"prefix":"","firstName":"Wenyan","middleName":"","lastName":"Fan","suffix":""},{"id":466029187,"identity":"f571be25-d5ae-49a8-bc18-5455723280fe","order_by":2,"name":"Ruiqiang Lu","email":"","orcid":"","institution":"Guangzhou customs technical center","correspondingAuthor":false,"prefix":"","firstName":"Ruiqiang","middleName":"","lastName":"Lu","suffix":""},{"id":466029188,"identity":"eedd0740-cb62-48f0-9345-23639ef65d7b","order_by":3,"name":"Bingfeng Li","email":"","orcid":"","institution":"Guangzhou customs technical center","correspondingAuthor":false,"prefix":"","firstName":"Bingfeng","middleName":"","lastName":"Li","suffix":""},{"id":466029189,"identity":"64943272-d88e-47ff-9373-9a3f1bbcb193","order_by":4,"name":"Yihui Li","email":"","orcid":"","institution":"Guangzhou customs technical center","correspondingAuthor":false,"prefix":"","firstName":"Yihui","middleName":"","lastName":"Li","suffix":""},{"id":466029190,"identity":"e77eac35-4d62-4d1a-9abf-c90f75cf4d2e","order_by":5,"name":"Xinshen Huang","email":"","orcid":"","institution":"Guangzhou customs technical center","correspondingAuthor":false,"prefix":"","firstName":"Xinshen","middleName":"","lastName":"Huang","suffix":""},{"id":466029191,"identity":"50f9dc30-3f1a-483d-bbe5-03b74d4978eb","order_by":6,"name":"Jia Zhang","email":"","orcid":"","institution":"Guangzhou customs technical center","correspondingAuthor":false,"prefix":"","firstName":"Jia","middleName":"","lastName":"Zhang","suffix":""},{"id":466029192,"identity":"ddb18483-b501-40fe-8d47-a2011a86b83d","order_by":7,"name":"Zheng Wu","email":"","orcid":"","institution":"Guangzhou customs technical center","correspondingAuthor":false,"prefix":"","firstName":"Zheng","middleName":"","lastName":"Wu","suffix":""},{"id":466029193,"identity":"b89b7625-ed96-4135-a47e-24f749ad25f7","order_by":8,"name":"Zhenmin Wang","email":"","orcid":"","institution":"South China University of Technology","correspondingAuthor":false,"prefix":"","firstName":"Zhenmin","middleName":"","lastName":"Wang","suffix":""},{"id":466029194,"identity":"0659a64a-d2fa-4f17-9a57-f745bedfeea9","order_by":9,"name":"Hao Li","email":"","orcid":"","institution":"Guangzhou customs technical center","correspondingAuthor":false,"prefix":"","firstName":"Hao","middleName":"","lastName":"Li","suffix":""}],"badges":[],"createdAt":"2025-05-16 00:34:10","currentVersionCode":1,"declarations":"","doi":"10.21203/rs.3.rs-6676002/v1","doiUrl":"https://doi.org/10.21203/rs.3.rs-6676002/v1","draftVersion":[],"editorialEvents":[],"editorialNote":"","failedWorkflow":false,"files":[],"financialInterests":"","formattedTitle":"Dynamic Waveform-Controlled Ultra-High Frequency Pulse Power System Enabled by SiC MOSFETs: Design and Welding Applications","fulltext":[],"fulltextSource":"","fullText":"","funders":[],"hasAdminPriorityOnWorkflow":false,"hasManuscriptDocX":false,"hasOptedInToPreprint":true,"hasPassedJournalQc":"","hasAnyPriority":false,"hideJournal":false,"highlight":"","institution":"","isAcceptedByJournal":true,"isAuthorSuppliedPdf":true,"isDeskRejected":"","isHiddenFromSearch":false,"isInQc":false,"isInWorkflow":true,"isPdf":true,"isPdfUpToDate":false,"isWithdrawnOrRetracted":false,"journal":{"display":true,"email":"
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