Monolithic active-matrix full-color micro-LED micro-display using InGaN/AlGaInP heterogeneous integration

Abstract A prototype of active-matrix driven full-color micro-LED micro- display with a resolution of 200 × 80 is demonstrated using InGaN/AlGaInP heterogeneous integration. InGaN blue/green dual-color micro-LED arrays on a single MOCVD-grown GaN-on-Si epi-wafer and AlGaInP red micro-LED arrays were both monolithically fabricated, followed by the integration with a common CMOS backplane via flip-chip bonding technology to form a double-layer thin-film display structure. Full-color images with decent color gamut and brightness were successfully displayed by fine adjustment of the driving current densities of RGB subpixels. This integration method combines the benefits of the highly efficient InGaN blue/green emission with AlGaInP red light emission. The high pixel density demonstrated using the monolithic fabrication method shows the feasibility and promise for high brightness, good color performance and high-resolution micro-LED micro-displays towards future metaverse applications.