Crystallization growth of layer-controlled ultra-flat hBN single-crystal films with high insulation

Crystallization growth of layer-controlled ultra-flat hBN single-crystal films with high insulation | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Physical Sciences - Article Crystallization growth of layer-controlled ultra-flat hBN single-crystal films with high insulation Libo Gao, Hang Zheng, Xianlei Huang, Fuchen Hou, Heng Niu, Quan Xie, and 16 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-3849670/v1 This work is licensed under a CC BY 4.0 License Status: Under Review Version 1 posted You are reading this latest preprint version Abstract Hexagonal boron nitride (hBN), an insulating two-dimensional (2D) material, is widely regarded as an ideal dielectric layer for 2D-based functional devices. Nevertheless, achieving wafer-scale ultra-flat hBN films with uniform thickness and high insulating properties remains a significant challenge. Here, we demonstrate the controlled growth of ultra-flat hBN single-crystal wafers with well-defined layer numbers tuned from one to eight. These hBN films are crystallized from amorphous precursors with predefined thickness, resulting in ultra-flat surfaces, uniform AA’ stacking order and single-crystal features. These ultra-flat films demonstrate excellent insulating performances across the entire wafer, with breakdown fields of 10 – 12 MV/cm and leakage current densities below 10-13 A/cm2. They can be directly employed as dielectric layers for high-performance graphene electronic devices. These highly insulating, wafer-scale ultra-flat hBN wafers will further accelerate the next-generation 2D-based multifunctional devices. Physical sciences/Materials science/Nanoscale materials/Two-dimensional materials Physical sciences/Nanoscience and technology/Nanoscale materials/Graphene/Synthesis of graphene Full Text Additional Declarations There is NO Competing Interest. Supplementary Files Movie.mp4 Theoretical simulation of crystallizing aBN into hBN Cite Share Download PDF Status: Under Review Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-3849670","acceptedTermsAndConditions":true,"allowDirectSubmit":false,"archivedVersions":[],"articleType":"Physical Sciences - Article","associatedPublications":[],"authors":[{"id":561885620,"identity":"aeb364e0-9dd0-488c-8421-3935de64f82d","order_by":0,"name":"Libo 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