Enhancing the parameters of ZnO/CdZnS thin film photodetector by thermal annealing

This work aims to manufacture photodetectors from semiconducting bilayer materials of zinc oxide Nanorods (ZnO NRs) and coated with a thin layer of CdZnS by chemical bath deposition method (CBD). The effect of annealing time on the optical and electrical properties of the prepared devices and on the parameters of the devices was also studied. The prepared films were thermally treated by annealing at a temperature of 200 ° C for several times for the purpose of comparison. The annealing times were 15 30 35 60 minutes, respectively, by means of a vacuum furnace. The effect of the annealing time was noticeable and obvious on the optical and electrical properties of the manufactured photodetectors.