Numerical Simulation Study on the Electrical Properties of Tin-based Perovskite TFT Based on Bilayer Structure

Numerical Simulation Study on the Electrical Properties of Tin-based Perovskite TFT Based on Bilayer Structure | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Numerical Simulation Study on the Electrical Properties of Tin-based Perovskite TFT Based on Bilayer Structure Yingtao Xie, Baocheng Xia, Yuan Zhang, Rui Xie, Xin Deng This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-9127632/v1 This work is licensed under a CC BY 4.0 License Status: Under Review Version 1 posted 6 You are reading this latest preprint version Abstract The methylammonium tin iodide (MASnI \((_3)\) ) thin-film transistor (TFT) still has key electrical performance problems such as threshold voltage drift and unstable mobility in practical applications. This is mainly due to the unreasonable distribution of defect density of states (DOS) caused by inherent defects in the material (such as tin vacancies). To address this deficiency, this paper proposes a novel bilayer MASnI \((_3)\) TFT structure, which utilizes the interlayer chemical potential difference to suppress the formation of tin vacancies, thereby optimizing the defect density distribution to improve device performance. Based on the two-dimensional device simulator of TCAD, the influence of defect DOS parameters such as tail state-donor state, Gaussian-class dependent state on the electrical characteristics of the device was systematically studied. The simulation results show that, compared with the traditional single-layer structure, the bilayer MASnI \((_3)\) TFT can adjust the threshold voltage to about 1 V and stabilize the saturation mobility at 11 cm \((^2)\) /V·s, providing a new structural optimization scheme for solving the performance bottleneck of tin-based perovskite TFT and offering theoretical guidance for the preparation of high-performance perovskite TFT. defect density of states threshold voltage drift MASnI3 bilayer thin-film transistors Full Text Additional Declarations No competing interests reported. Cite Share Download PDF Status: Under Review Version 1 posted Reviews received at journal 03 Apr, 2026 Reviewers agreed at journal 27 Mar, 2026 Reviewers invited by journal 16 Mar, 2026 Editor assigned by journal 16 Mar, 2026 Submission checks completed at journal 16 Mar, 2026 First submitted to journal 15 Mar, 2026 You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-9127632","acceptedTermsAndConditions":true,"allowDirectSubmit":false,"archivedVersions":[],"articleType":"Research Article","associatedPublications":[],"authors":[{"id":607236315,"identity":"faea85d7-1b3c-4622-b06d-0cc5d6a77c29","order_by":0,"name":"Yingtao Xie","email":"data:image/png;base64,iVBORw0KGgoAAAANSUhEUgAAAZAAAAAyAQMAAABI0h/eAAAABlBMVEX///8AAABVwtN+AAAACXBIWXMAAA7EAAAOxAGVKw4bAAAA0UlEQVRIiWNgGAWjYDACZhBRAeOxEavlwBkYiygtIHCwjRQtBseZj0l/nGcnu+F2/wGGD2WHGfhnN+DXItnMliZxcFuy8YY7hxkYZ5w7zCBx5wB+LfzMPGZALQcSN9xIZmDmbTvMYCCRgF8LGzP/N4mDc6Ba/hKjBWgLm8TBBqgWRmK0AP1ibHHmWLLxzDuHDQ72nEvnkbhBQIvB+cMPb1TU2Mn23W58+OBHmbUc/wwCWoCARQJIMDYAyQNABg9B9UDA/AGmZRSMglEwCkYBVgAAUdREb0/vQIkAAAAASUVORK5CYII=","orcid":"","institution":"Chongqing University of Posts and Telecommunications","correspondingAuthor":true,"prefix":"","firstName":"Yingtao","middleName":"","lastName":"Xie","suffix":""},{"id":607236316,"identity":"1181741a-c768-4997-a28b-57868d362df4","order_by":1,"name":"Baocheng Xia","email":"","orcid":"","institution":"Chongqing University of Posts and Telecommunications","correspondingAuthor":false,"prefix":"","firstName":"Baocheng","middleName":"","lastName":"Xia","suffix":""},{"id":607236317,"identity":"c155b3a9-8489-440f-a5b4-790ffbb1a64e","order_by":2,"name":"Yuan Zhang","email":"","orcid":"","institution":"Chongqing University of Posts and Telecommunications","correspondingAuthor":false,"prefix":"","firstName":"Yuan","middleName":"","lastName":"Zhang","suffix":""},{"id":607236318,"identity":"c5a522c0-9ccb-4b76-b83c-460c90c4ec3c","order_by":3,"name":"Rui Xie","email":"","orcid":"","institution":"Chongqing University of Posts and Telecommunications","correspondingAuthor":false,"prefix":"","firstName":"Rui","middleName":"","lastName":"Xie","suffix":""},{"id":607236319,"identity":"e9658603-1a59-4b2f-83f4-f707f2520ca5","order_by":4,"name":"Xin Deng","email":"","orcid":"","institution":"Chongqing University of Posts and Telecommunications","correspondingAuthor":false,"prefix":"","firstName":"Xin","middleName":"","lastName":"Deng","suffix":""}],"badges":[],"createdAt":"2026-03-15 09:39:12","currentVersionCode":1,"declarations":"","doi":"10.21203/rs.3.rs-9127632/v1","doiUrl":"https://doi.org/10.21203/rs.3.rs-9127632/v1","draftVersion":[],"editorialEvents":[],"editorialNote":"","failedWorkflow":false,"files":[{"id":105034005,"identity":"8a1f4feb-a7d8-4914-90c4-32a037d14298","added_by":"auto","created_at":"2026-03-20 07:22:25","extension":"pdf","order_by":1,"title":"","display":"","copyAsset":false,"role":"manuscript-pdf","size":392626,"visible":true,"origin":"","legend":"","description":"","filename":"NumericalSimulationStudyontheElectricalPropertiesofTinbasedPerovskiteTFTBasedonBilayerStructure.pdf","url":"https://assets-eu.researchsquare.com/files/rs-9127632/v1_covered_a2dcf09f-e373-416f-aac7-35e3e1bbb164.pdf"}],"financialInterests":"No competing interests reported.","formattedTitle":"Numerical Simulation Study on the Electrical Properties of Tin-based Perovskite TFT Based on Bilayer Structure","fulltext":[],"fulltextSource":"","fullText":"","funders":[],"hasAdminPriorityOnWorkflow":false,"hasManuscriptDocX":false,"hasOptedInToPreprint":true,"hasPassedJournalQc":"","hasAnyPriority":false,"hideJournal":false,"highlight":"","institution":"","isAcceptedByJournal":false,"isAuthorSuppliedPdf":true,"isDeskRejected":"","isHiddenFromSearch":false,"isInQc":false,"isInWorkflow":false,"isPdf":true,"isPdfUpToDate":true,"isWithdrawnOrRetracted":false,"journal":{"display":true,"email":"[email protected]","identity":"journal-of-computational-electronics","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":false,"externalIdentity":"jcel","sideBox":"Learn more about [Journal of Computational Electronics](https://www.springer.com/journal/10825)","snPcode":"10825","submissionUrl":"https://submission.nature.com/new-submission/10825/3","title":"Journal of Computational Electronics","twitterHandle":"","acdcEnabled":true,"dfaEnabled":true,"editorialSystem":"stoa","reportingPortfolio":"Springer Hybrid","inReviewEnabled":true,"inReviewRevisionsEnabled":false},"keywords":"defect density of states, threshold voltage drift, MASnI3,bilayer, thin-film transistors","lastPublishedDoi":"10.21203/rs.3.rs-9127632/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-9127632/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"\u003cp\u003eThe methylammonium tin iodide (MASnI\u003cspan class=\"InlineEquation\"\u003e\u003cspan class=\"mathinline\"\u003e\\((_3)\\)\u003c/span\u003e\u003c/span\u003e) thin-film transistor (TFT) still has key electrical performance problems such as threshold voltage drift and unstable mobility in practical applications. This is mainly due to the unreasonable distribution of defect density of states (DOS) caused by inherent defects in the material (such as tin vacancies). To address this deficiency, this paper proposes a novel bilayer MASnI\u003cspan class=\"InlineEquation\"\u003e\u003cspan class=\"mathinline\"\u003e\\((_3)\\)\u003c/span\u003e\u003c/span\u003e TFT structure, which utilizes the interlayer chemical potential difference to suppress the formation of tin vacancies, thereby optimizing the defect density distribution to improve device performance. Based on the two-dimensional device simulator of TCAD, the influence of defect DOS parameters such as tail state-donor state, Gaussian-class dependent state on the electrical characteristics of the device was systematically studied. The simulation results show that, compared with the traditional single-layer structure, the bilayer MASnI\u003cspan class=\"InlineEquation\"\u003e\u003cspan class=\"mathinline\"\u003e\\((_3)\\)\u003c/span\u003e\u003c/span\u003e TFT can adjust the threshold voltage to about 1 V and stabilize the saturation mobility at 11 cm\u003cspan class=\"InlineEquation\"\u003e\u003cspan class=\"mathinline\"\u003e\\((^2)\\)\u003c/span\u003e\u003c/span\u003e/V\u0026middot;s, providing a new structural optimization scheme for solving the performance bottleneck of tin-based perovskite TFT and offering theoretical guidance for the preparation of high-performance perovskite TFT.\u003c/p\u003e","manuscriptTitle":"Numerical Simulation Study on the Electrical Properties of Tin-based Perovskite TFT Based on Bilayer Structure","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2026-03-18 07:02:49","doi":"10.21203/rs.3.rs-9127632/v1","editorialEvents":[{"type":"communityComments","content":0},{"type":"editorInvitedReview","content":"","date":"2026-04-03T17:19:38+00:00","index":"hide","fulltext":""},{"type":"reviewerAgreed","content":"283732467550543975725775371785898164654","date":"2026-03-27T07:27:59+00:00","index":"hide","fulltext":""},{"type":"reviewersInvited","content":"","date":"2026-03-17T01:21:42+00:00","index":"","fulltext":""},{"type":"editorAssigned","content":"","date":"2026-03-16T05:50:16+00:00","index":"","fulltext":""},{"type":"checksComplete","content":"","date":"2026-03-16T05:50:00+00:00","index":"","fulltext":""},{"type":"submitted","content":"Journal of Computational Electronics","date":"2026-03-15T09:33:02+00:00","index":"","fulltext":""}],"status":"published","journal":{"display":true,"email":"[email protected]","identity":"journal-of-computational-electronics","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":false,"externalIdentity":"jcel","sideBox":"Learn more about [Journal of Computational Electronics](https://www.springer.com/journal/10825)","snPcode":"10825","submissionUrl":"https://submission.nature.com/new-submission/10825/3","title":"Journal of Computational Electronics","twitterHandle":"","acdcEnabled":true,"dfaEnabled":true,"editorialSystem":"stoa","reportingPortfolio":"Springer Hybrid","inReviewEnabled":true,"inReviewRevisionsEnabled":false}}],"origin":"","ownerIdentity":"dd74ed36-8f61-4205-b2e1-04a46455f169","owner":[],"postedDate":"March 18th, 2026","published":true,"recentEditorialEvents":[],"rejectedJournal":[],"revision":"","amendment":"","status":"under-review","subjectAreas":[],"tags":[],"updatedAt":"2026-03-18T07:02:49+00:00","versionOfRecord":[],"versionCreatedAt":"2026-03-18 07:02:49","video":"","vorDoi":"","vorDoiUrl":"","workflowStages":[]},"version":"v1","identity":"rs-9127632","journalConfig":"researchsquare"},"__N_SSP":true},"page":"/article/[identity]/[[...version]]","query":{"redirect":"/article/rs-9127632","identity":"rs-9127632","version":["v1"]},"buildId":"XKTyCvWXoU3ODBz1xrDgd","isFallback":false,"isExperimentalCompile":false,"dynamicIds":[84888],"gssp":true,"scriptLoader":[]}