A design strategy for high-performance p-type two-dimensional field effect transistors

A design strategy for high-performance p-type two-dimensional field effect transistors | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Article A design strategy for high-performance p-type two-dimensional field effect transistors Saptarshi Das, Mayukh Das, Dipanjan Sen, Najam U Sakib, Harikrishnan Ravichandran, and 16 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-4019545/v1 This work is licensed under a CC BY 4.0 License Status: Published Journal Publication published 06 Nov, 2024 Read the published version in Nature Electronics → Version 1 posted You are reading this latest preprint version Abstract Doping plays a critical role in tailoring the characteristics of semiconducting materials and electronic devices. Specifically, in the context of field-effect transistors (FETs), degenerate doping in the silicon channel beneath the source and drain regions has become essential for achieving high-performance n- and p-type devices, as well as significantly reducing contact resistance (R_C). In contrast, two-dimensional (2D) semiconductors have mainly relied on metal work-function engineering to lower R_C. While this approach has proven successful for n-type 2D FETs due to the natural tendency of the metal Fermi level to align near the conduction band edge, it has been challenging to achieve the same for p-type 2D FETs. To address this, first, we demonstrate that degenerate p-type doping can be accomplished in thick (>3 monolayers) MoSe2 and WSe2 FETs through substitutional doping of transition metal with V, Nb, and Ta. However, the degenerate doping leads to weakened electrostatic gate control, resulting in a poor on/off current ratio. Interestingly, the doping effectiveness is significantly reduced in thinner flakes (< 3 monolayers) due to strong quantum confinement effects, thereby restoring the electrostatic gate control. Based on this observation, we designed a FET structure where the channel is constructed using thinner 2D material, while the contact regions consist of degenerately doped thicker layers, allowing us to achieve both low R_C and high on/off current ratio. The doping and device design approach we propose should be just as relevant for synthetic 2D materials and n-type 2D FETs. Our insights may steer the direction of large-scale synthesis methods, prioritizing the creation of doped multilayers over monolayers to further progress in 2D FET technology. Physical sciences/Materials science/Nanoscale materials/Two-dimensional materials Physical sciences/Engineering/Electrical and electronic engineering Full Text Additional Declarations There is NO Competing Interest. Cite Share Download PDF Status: Published Journal Publication published 06 Nov, 2024 Read the published version in Nature Electronics → Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-4019545","acceptedTermsAndConditions":true,"allowDirectSubmit":false,"archivedVersions":[],"articleType":"Article","associatedPublications":[],"authors":[{"id":285159847,"identity":"35dba2a3-58e7-4ee9-b39d-377ec532bbdb","order_by":0,"name":"Saptarshi 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Specifically, in the context of field-effect transistors (FETs), degenerate doping in the silicon channel beneath the source and drain regions has become essential for achieving high-performance n- and p-type devices, as well as significantly reducing contact resistance (R_C). In contrast, two-dimensional (2D) semiconductors have mainly relied on metal work-function engineering to lower R_C. While this approach has proven successful for n-type 2D FETs due to the natural tendency of the metal Fermi level to align near the conduction band edge, it has been challenging to achieve the same for p-type 2D FETs. To address this, first, we demonstrate that degenerate p-type doping can be accomplished in thick (\u003e3 monolayers) MoSe2 and WSe2 FETs through substitutional doping of transition metal with V, Nb, and Ta. However, the degenerate doping leads to weakened electrostatic gate control, resulting in a poor on/off current ratio. Interestingly, the doping effectiveness is significantly reduced in thinner flakes (\u003c 3 monolayers) due to strong quantum confinement effects, thereby restoring the electrostatic gate control. Based on this observation, we designed a FET structure where the channel is constructed using thinner 2D material, while the contact regions consist of degenerately doped thicker layers, allowing us to achieve both low R_C and high on/off current ratio. The doping and device design approach we propose should be just as relevant for synthetic 2D materials and n-type 2D FETs. 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