Experimental Determination of Giant Polarization in Wurtzite III-Nitride Semiconductors | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Article Experimental Determination of Giant Polarization in Wurtzite III-Nitride Semiconductors Xinqiang Wang, Haotian Ye, Ping Wang, Rui Wang, Jinlin Wang, Xifan Xu, and 9 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-5438804/v1 This work is licensed under a CC BY 4.0 License Status: Published Journal Publication published 24 Apr, 2025 Read the published version in Nature Communications → Version 1 posted You are reading this latest preprint version Abstract Polarization engineering has revolutionized the photonic and electronic landscape of III-nitride semiconductors over the past decades. However, recent revelations of giant ferroelectric polarization in wurtzite III-nitrides challenge the long-standing paradigms. Here, we experimentally elucidate the polarization, including its magnitude and orientation, and its relationship to lattice polarity in III-nitrides. Those experimentally determined polarizations exceeding 1 C/m2 with an upward orientation in metal-polar wurtzite nitride compounds align with recent theoretical predictions. This unified framework redefines the polarization landscape in contemporary GaN heterostructures, quantum structures, and ferroelectric heterostructures. Furthermore, we predict significant tunability and a dramatic increase in sheet electron concentration in ferroelectric ScAlN/GaN heterostructures, heralding advancements in high-power, high-frequency, and reconfigurable transistors, and non-volatile memories. This work bridges the critical gap in the understanding of polarization in both conventional and ferroelectric wurtzite nitrides, offering fundamental insights and paving the way for next-generation photonic, electronic, and acoustic devices. Physical sciences/Physics/Condensed-matter physics/Semiconductors Physical sciences/Materials science/Condensed-matter physics/Semiconductors Physical sciences/Physics/Condensed-matter physics/Ferroelectrics and multiferroics Physical sciences/Materials science/Condensed-matter physics/Ferroelectrics and multiferroics Full Text Additional Declarations There is NO Competing Interest. Supplementary Files SIIIINpolarization.pdf Cite Share Download PDF Status: Published Journal Publication published 24 Apr, 2025 Read the published version in Nature Communications → Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-5438804","acceptedTermsAndConditions":true,"allowDirectSubmit":false,"archivedVersions":[],"articleType":"Article","associatedPublications":[],"authors":[{"id":380857293,"identity":"bf43042a-d517-4be6-a04e-74dfe90fbecf","order_by":0,"name":"Xinqiang 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