Structure and Electrical Resistance of the Passivating ZnSe Layer on Ge

Abstract When creating a passivating ZnSe layer on Ge, which is used in p-i-n Ge photodetector, we found two additional phases GeSe and GeSe2 that does not contradict with their state diagram. The above phases can have an essential effect on performances of the passivating layer. Therefore, to study the electrical resistance of this layer we prepared model samples of layers containing the GeSe and GeSe2 with the thickness 0.5…1.8 µm and area 1 cm2. To measure the electrical resistance of these layers, we used elastic contacts. The performed measurements have shown that Se layers on Ge have an intermediate resistance between that of ZnSe on Ge and pure Ge, and, therefore, the effect of additional phases practically does not worsen the passivating properties of the ZnSe layer on Ge.