A Low Leakage 9T SRAM Cell With Improve Stability in Sub-Threshold Region for IoT Applications
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This paper introduces a low-leakage 9T SRAM cell operating in the sub-threshold region, demonstrating reduced power dissipation and improved stability with enhanced read/write margins and faster read access time compared to conventional 6T cells.
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This preprint studies a proposed low-leakage 9-transistor (9T) SRAM cell designed for single-ended read and differential write operations in the sub-threshold region, comparing its behavior to conventional 6T SRAM at a 0.3 V supply level. Using transistor stacking in the core latch network, forward body bias on the read path, and Monte Carlo simulation with 5000 process-variation points, the authors report reduced read and write power dissipation (1.41× and 2.1× versus 6T) along with improved read static noise margin and write margin (2.16× and 2.06×) and a higher mean I_on/I_off ratio (2.92×), attributed to reduced bit-line leakage; they also observe a reduced read access time (2.72×). A stated limitation is that the work is a preprint that has not been peer reviewed. This paper does not explicitly discuss endometriosis or adenomyosis; it was included in the corpus via a keyword match in the upstream search index.
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Abstract This paper presents a single-ended read and differential write half select free 9T static random access memory (SRAM) cell operates in the sub-threshold region. Proposed 9T SRAM cell shows a reasonable reduction in read and write power dissipation by a factor of 1.41× and 2.1× respectively as of conventional 6T (Conv.6T) SRAM cell. The stacking of transistors at core latch network minimizes the leakage power of the cell. The read static noise margin (RSNM) and write margin (WM) are upgraded by 2.16× and 2.06× respectively as of Conv.6T cell. A forward body bias technique is utilized in read path which results to decreases in read access time by a factor of 2.72× as of standard 6T SRAM cell. The mean value of Ion/Ioff ratio of the proposed cell is improved by 2.92× as compared to the Conv.6T SRAM cell. It is attributed to a reduction in bit-line leakage current. To achieve more soundness in characteristics of the proposed 9T SRAM cell, process variation effect on RSNM, power dissipation, and read current is calculated through Monte Carlo (MC) simulation at 5000 points. The obtained results are compared with reference SRAM cells at 0.3V supply voltage.
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A Low Leakage 9T SRAM Cell With Improve Stability in Sub-Threshold Region for IoT Applications | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article A Low Leakage 9T SRAM Cell With Improve Stability in Sub-Threshold Region for IoT Applications Harekrishna Kumar, V.K Tomar This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-271775/v1 This work is licensed under a CC BY 4.0 License Status: Under Review Version 1 posted 4 You are reading this latest preprint version Abstract This paper presents a single-ended read and differential write half select free 9T static random access memory (SRAM) cell operates in the sub-threshold region. Proposed 9T SRAM cell shows a reasonable reduction in read and write power dissipation by a factor of 1.41× and 2.1× respectively as of conventional 6T (Conv.6T) SRAM cell. The stacking of transistors at core latch network minimizes the leakage power of the cell. The read static noise margin (RSNM) and write margin (WM) are upgraded by 2.16× and 2.06× respectively as of Conv.6T cell. A forward body bias technique is utilized in read path which results to decreases in read access time by a factor of 2.72× as of standard 6T SRAM cell. The mean value of I on /I off ratio of the proposed cell is improved by 2.92× as compared to the Conv.6T SRAM cell. It is attributed to a reduction in bit-line leakage current. To achieve more soundness in characteristics of the proposed 9T SRAM cell, process variation effect on RSNM, power dissipation, and read current is calculated through Monte Carlo (MC) simulation at 5000 points. The obtained results are compared with reference SRAM cells at 0.3V supply voltage. Scientific Communication Technical Communication Sub-threshold Stability Low power Ion/Iof f ratio Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Full Text Cite Share Download PDF Status: Under Review Version 1 posted Editorial decision: Reject without review 19 Apr, 2026 Reviewers invited by journal 13 Mar, 2021 Editor assigned by journal 24 Feb, 2021 First submitted to journal 23 Feb, 2021 You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. 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Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-271775","acceptedTermsAndConditions":true,"allowDirectSubmit":false,"archivedVersions":[],"articleType":"Research Article","associatedPublications":[],"authors":[{"id":16538020,"identity":"9c056325-8c0b-4e88-88ef-8fd8a36af99d","order_by":0,"name":"Harekrishna Kumar","email":"data:image/png;base64,iVBORw0KGgoAAAANSUhEUgAAAZAAAAAyAQMAAABI0h/eAAAABlBMVEX///8AAABVwtN+AAAACXBIWXMAAA7EAAAOxAGVKw4bAAABA0lEQVRIiWNgGAWjYBACAyBmbGCQADHYgGwbEL/xACla0sB8YrQwwLQcBovi1WLOfvbhw5l7LOzNpZufPfy647zd2vbDQFtqbKJxabHsSTc23PBMInHnnGPmxrJnbidvO5MI1HIsLbcBl8MOpLFJPjggkWBwI8FMWrLtdrLZAaAWxobDuLWcf8b+E6jF3uBG+jeglnPJZucfEtByI42NccMBCcYNN3LMJD+2HbAzu0HIlhvPmCVnHJBIBGopN2Y8k5xgdgNoSwI+v5xPY/zYc6AO5LBtD3/usLM3O5/+8MGHGhucWlAAM28DQyJYZQIxykGA8WcDgz2xikfBKBgFo2DkAAAhnGrjTAHeMAAAAABJRU5ErkJggg==","orcid":"https://orcid.org/0000-0002-2098-4196","institution":"GLA University","correspondingAuthor":true,"prefix":"","firstName":"Harekrishna","middleName":"","lastName":"Kumar","suffix":""},{"id":16538021,"identity":"ceb8e811-4f5e-452b-b3f8-5cdf098172a5","order_by":1,"name":"V.K Tomar","email":"","orcid":"","institution":"GLA University","correspondingAuthor":false,"prefix":"","firstName":"V.K","middleName":"","lastName":"Tomar","suffix":""}],"badges":[],"createdAt":"2021-02-23 19:09:51","currentVersionCode":1,"declarations":"","doi":"10.21203/rs.3.rs-271775/v1","doiUrl":"https://doi.org/10.21203/rs.3.rs-271775/v1","draftVersion":[],"editorialEvents":[],"editorialNote":"","failedWorkflow":false,"files":[{"id":7012312,"identity":"d57a3a0b-2d5c-4881-90ed-b1a4ca657f87","added_by":"auto","created_at":"2021-03-16 13:47:38","extension":"jpg","order_by":1,"title":"Figure 1","display":"","copyAsset":false,"role":"figure","size":53233,"visible":true,"origin":"","legend":"Typical IoT sensor node","description":"","filename":"fig1.jpg","url":"https://assets-eu.researchsquare.com/files/rs-271775/v1/6fa1235795581010ab404696.jpg"},{"id":7011736,"identity":"8cf1261c-2031-4ae9-9a65-89f109d88369","added_by":"auto","created_at":"2021-03-16 13:44:38","extension":"jpg","order_by":2,"title":"Figure 2","display":"","copyAsset":false,"role":"figure","size":67283,"visible":true,"origin":"","legend":"Schematic of considered (a) Conv.6T,(b) PCF10T,(c) LP12T,(d) SPG11T,(e) DF8T ,(f) TG8T SRAM cells","description":"","filename":"fig2.jpg","url":"https://assets-eu.researchsquare.com/files/rs-271775/v1/a48d514ce53ebe3e19fb7cf9.jpg"},{"id":7012768,"identity":"5648c62b-7d27-4baa-adb5-27840087184e","added_by":"auto","created_at":"2021-03-16 13:50:38","extension":"jpg","order_by":3,"title":"Figure 3","display":"","copyAsset":false,"role":"figure","size":161181,"visible":true,"origin":"","legend":"Proposed LP9T SRAM cell","description":"","filename":"fig3.jpg","url":"https://assets-eu.researchsquare.com/files/rs-271775/v1/f61909982ab2eab768d6b2ad.jpg"},{"id":7011729,"identity":"ac5b5a2f-c089-4d8f-9184-461eeac7c2f8","added_by":"auto","created_at":"2021-03-16 13:44:38","extension":"jpg","order_by":4,"title":"Figure 4","display":"","copyAsset":false,"role":"figure","size":221706,"visible":true,"origin":"","legend":"LP9T SRAM during read operation","description":"","filename":"fig4.jpg","url":"https://assets-eu.researchsquare.com/files/rs-271775/v1/5baef9ca6c87a3b137b4ec73.jpg"},{"id":7012310,"identity":"ccadf16c-86d0-4bee-bcd8-92d78c86508c","added_by":"auto","created_at":"2021-03-16 13:47:38","extension":"jpg","order_by":5,"title":"Figure 5","display":"","copyAsset":false,"role":"figure","size":222852,"visible":true,"origin":"","legend":" LP9T SRAM during Write operation","description":"","filename":"fig5.jpg","url":"https://assets-eu.researchsquare.com/files/rs-271775/v1/b7a16917ac92dae148f81e41.jpg"},{"id":7012313,"identity":"84d8b275-d7d4-4da8-8e3e-37f17c3c990d","added_by":"auto","created_at":"2021-03-16 13:47:38","extension":"jpg","order_by":6,"title":"Figure 6","display":"","copyAsset":false,"role":"figure","size":39335,"visible":true,"origin":"","legend":"(a) Elimination of Column Half selected issue in LP9T SRAM\ncell,(b) Transient wave form of selected cell,(c) Transient wave form\nof unselected cell during write operation.","description":"","filename":"fig6.jpg","url":"https://assets-eu.researchsquare.com/files/rs-271775/v1/1d104115d2112a0f64437b47.jpg"},{"id":7011739,"identity":"6a990133-2eb7-42ec-ba5b-cbaed50e9d72","added_by":"auto","created_at":"2021-03-16 13:44:39","extension":"jpg","order_by":7,"title":"Figure 7","display":"","copyAsset":false,"role":"figure","size":103965,"visible":true,"origin":"","legend":"(a)Read Power at different supply voltage,(b) MC of read power at 0.3V, (c) Write power at different supply voltage,(d) MC of write power at 0.3V, (e) Leakage power at different supply voltage, (f) MC of leakage power at 0.3V, (g) Leakage power with temperature at 0.3V supply voltage.","description":"","filename":"fig7.jpg","url":"https://assets-eu.researchsquare.com/files/rs-271775/v1/59593dc9f71683352990be4f.jpg"},{"id":7012769,"identity":"eebb3342-73b0-41d0-a9eb-d17ae09bbd11","added_by":"auto","created_at":"2021-03-16 13:50:38","extension":"jpg","order_by":8,"title":"Figure 8","display":"","copyAsset":false,"role":"figure","size":32487,"visible":true,"origin":"","legend":"(a) Read delay at different supply voltages, (b) Write delay at\ndifferent supply voltages","description":"","filename":"fig8.jpg","url":"https://assets-eu.researchsquare.com/files/rs-271775/v1/ca072dc2fc3b2d2941ee9763.jpg"},{"id":7011734,"identity":"afeb263a-b10c-4132-88c1-0a4227de8da2","added_by":"auto","created_at":"2021-03-16 13:44:38","extension":"jpg","order_by":9,"title":"Figure 9","display":"","copyAsset":false,"role":"figure","size":22299,"visible":true,"origin":"","legend":"HSNM at different supply voltage","description":"","filename":"fig9.jpg","url":"https://assets-eu.researchsquare.com/files/rs-271775/v1/ffe952762db0d710d4cbfe8a.jpg"},{"id":7011731,"identity":"8a184c01-a80d-4bde-b806-84bfe7c6d2ab","added_by":"auto","created_at":"2021-03-16 13:44:38","extension":"jpg","order_by":10,"title":"Figure 10","display":"","copyAsset":false,"role":"figure","size":69582,"visible":true,"origin":"","legend":"(a) Butterfly curves of SRAM cell, (b) RSNM at different supply voltages, (c) MC simulation of RSNM at 0.3V supply voltage.","description":"","filename":"fig10.jpg","url":"https://assets-eu.researchsquare.com/files/rs-271775/v1/3ccc7fe6196845214df114a2.jpg"},{"id":7011740,"identity":"5666f328-ea23-4eaa-8a91-cc7197f4656a","added_by":"auto","created_at":"2021-03-16 13:44:39","extension":"jpg","order_by":11,"title":"Figure 11","display":"","copyAsset":false,"role":"figure","size":34006,"visible":true,"origin":"","legend":"Write margin of SRAM cells","description":"","filename":"fig11.jpg","url":"https://assets-eu.researchsquare.com/files/rs-271775/v1/f66d469f7cbcc4e65447d49f.jpg"},{"id":7011735,"identity":"b2144ab1-091e-4f84-af57-f3b6a680d6ec","added_by":"auto","created_at":"2021-03-16 13:44:38","extension":"jpg","order_by":12,"title":"Figure 12","display":"","copyAsset":false,"role":"figure","size":42859,"visible":true,"origin":"","legend":"MC of Ion/Ioff ratio at 0.3V supply voltage","description":"","filename":"fig12.jpg","url":"https://assets-eu.researchsquare.com/files/rs-271775/v1/760fee806f359ca67691f079.jpg"},{"id":7011738,"identity":"a5e3bdab-ebc0-4f82-81d3-592c3b6dc34b","added_by":"auto","created_at":"2021-03-16 13:44:39","extension":"jpg","order_by":13,"title":"Figure 13","display":"","copyAsset":false,"role":"figure","size":73480,"visible":true,"origin":"","legend":"LP9T SRAM cell (a) Read Current at Corners,(b) Read Power\nat Corners,(c) Write Power at Corners,(d) Leakage Power at Corners","description":"","filename":"fig13.jpg","url":"https://assets-eu.researchsquare.com/files/rs-271775/v1/6b68ea6e615ac863fae3fbcd.jpg"},{"id":7012315,"identity":"49c83cdb-cd59-4358-b327-ea33f770ec9b","added_by":"auto","created_at":"2021-03-16 13:47:39","extension":"jpg","order_by":14,"title":"Figure 14","display":"","copyAsset":false,"role":"figure","size":64761,"visible":true,"origin":"","legend":"Layout of (a) Conv.6T, (b) DF8T, (c) TG8T, (d) PCF10T, (e)\nSPG11T, (f) LP12T, (g) Proposed LP9T SRAM cell","description":"","filename":"fig14.jpg","url":"https://assets-eu.researchsquare.com/files/rs-271775/v1/f5c3d91be1c72eab50c6cff3.jpg"},{"id":7011741,"identity":"ba1bbe3d-3c5a-46f3-8839-8e6955e6bcde","added_by":"auto","created_at":"2021-03-16 13:44:39","extension":"jpg","order_by":15,"title":"Figure 15","display":"","copyAsset":false,"role":"figure","size":24130,"visible":true,"origin":"","legend":"Overall performance of SRAM cells","description":"","filename":"fig15.jpg","url":"https://assets-eu.researchsquare.com/files/rs-271775/v1/cbb5373ef3bc9031d88b996a.jpg"},{"id":13607692,"identity":"9a965600-a383-4eba-bd4f-68b458ad8c4f","added_by":"auto","created_at":"2021-09-17 06:13:14","extension":"pdf","order_by":1,"title":"","display":"","copyAsset":false,"role":"manuscript-pdf","size":23410253,"visible":true,"origin":"","legend":"","description":"","filename":"Manuscript.pdf","url":"https://assets-eu.researchsquare.com/files/rs-271775/v1_covered.pdf"},{"id":7013119,"identity":"4021a0fd-6505-4113-af8e-39ec351aad9c","added_by":"auto","created_at":"2021-03-16 13:53:45","extension":"pdf","order_by":1,"title":"","display":"","copyAsset":false,"role":"manuscript-pdf","size":22680508,"visible":true,"origin":"","legend":"","description":"","filename":"Manuscript.pdf","url":"https://assets-eu.researchsquare.com/files/rs-271775/v1_stamped.pdf"}],"financialInterests":"","formattedTitle":"\u003cp\u003eA Low Leakage 9T SRAM Cell With Improve Stability in Sub-Threshold Region for IoT Applications\u003c/p\u003e","fulltext":[{"header":"Full Text","content":"\u003cp\u003eThis preprint is available for \u003ca href='/article/rs-271775/latest.pdf' target='_blank'\u003edownload as a PDF\u003c/a\u003e.\u003c/p\u003e"}],"fulltextSource":"","fullText":"","funders":[],"hasAdminPriorityOnWorkflow":false,"hasManuscriptDocX":false,"hasOptedInToPreprint":true,"hasPassedJournalQc":"","hasAnyPriority":false,"hideJournal":false,"highlight":"","institution":"","isAcceptedByJournal":false,"isAuthorSuppliedPdf":true,"isDeskRejected":"","isHiddenFromSearch":false,"isInQc":false,"isInWorkflow":false,"isPdf":false,"isPdfUpToDate":true,"isWithdrawnOrRetracted":false,"journal":{"display":true,"email":"[email protected]","identity":"wireless-personal-communications","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":false,"externalIdentity":"wire","sideBox":"Learn more about [Wireless Personal Communications](https://www.springer.com/journal/11277)","snPcode":"11277","submissionUrl":"https://submission.nature.com/new-submission/11277/3","title":"Wireless Personal Communications","twitterHandle":"","acdcEnabled":true,"dfaEnabled":true,"editorialSystem":"stoa","reportingPortfolio":"Springer Hybrid","inReviewEnabled":true,"inReviewRevisionsEnabled":false},"keywords":"Sub-threshold, Stability, Low power, Ion/Iof f ratio","lastPublishedDoi":"10.21203/rs.3.rs-271775/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-271775/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"\u003cp\u003eThis paper presents a single-ended read and differential write half select free 9T static random access memory (SRAM) cell operates in the sub-threshold region. Proposed 9T SRAM cell shows a reasonable reduction in read and write power dissipation by a factor of 1.41× and 2.1× respectively as of conventional 6T (Conv.6T) SRAM cell. The stacking of transistors at core latch network minimizes the leakage power of the cell. The read static noise margin (RSNM) and write margin (WM) are upgraded by 2.16× and 2.06× respectively as of Conv.6T cell. A forward body bias technique is utilized in read path which results to decreases in read access time by a factor of 2.72× as of standard 6T SRAM cell. The mean value of I\u003csub\u003eon\u003c/sub\u003e/I\u003csub\u003eoff\u003c/sub\u003e ratio of the proposed cell is improved by 2.92× as compared to the Conv.6T SRAM cell. It is attributed to a reduction in bit-line leakage current. To achieve more soundness in characteristics of the proposed 9T SRAM cell, process variation effect on RSNM, power dissipation, and read current is calculated through Monte Carlo (MC) simulation at 5000 points. The obtained results are compared with reference SRAM cells at 0.3V supply voltage.\u003c/p\u003e","manuscriptTitle":"A Low Leakage 9T SRAM Cell With Improve Stability in Sub-Threshold Region for IoT Applications","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2021-03-16 13:44:36","doi":"10.21203/rs.3.rs-271775/v1","editorialEvents":[{"type":"communityComments","content":0},{"type":"decision","content":"Reject without review","date":"2026-04-19T16:22:51+00:00","index":"","fulltext":""},{"type":"reviewersInvited","content":"","date":"2021-03-14T00:00:00+00:00","index":"","fulltext":""},{"type":"editorAssigned","content":"","date":"2021-02-25T00:00:00+00:00","index":"","fulltext":""},{"type":"submitted","content":"Wireless Personal Communications","date":"2021-02-23T14:09:47+00:00","index":"","fulltext":""}],"status":"published","journal":{"display":true,"email":"[email protected]","identity":"wireless-personal-communications","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":false,"externalIdentity":"wire","sideBox":"Learn more about [Wireless Personal Communications](https://www.springer.com/journal/11277)","snPcode":"11277","submissionUrl":"https://submission.nature.com/new-submission/11277/3","title":"Wireless Personal Communications","twitterHandle":"","acdcEnabled":true,"dfaEnabled":true,"editorialSystem":"stoa","reportingPortfolio":"Springer Hybrid","inReviewEnabled":true,"inReviewRevisionsEnabled":false}}],"origin":"","ownerIdentity":"9544c773-aaee-4fe0-b569-c36a2ce25ca6","owner":[],"postedDate":"March 16th, 2021","published":true,"recentEditorialEvents":[],"rejectedJournal":[],"revision":"","amendment":"","status":"under-review","subjectAreas":[{"id":2999111,"name":"Scientific Communication"},{"id":2999112,"name":"Technical Communication"}],"tags":[],"updatedAt":"2021-03-16T13:44:36+00:00","versionOfRecord":[],"versionCreatedAt":"2021-03-16 13:44:36","video":"","vorDoi":"","vorDoiUrl":"","workflowStages":[]},"version":"v1","identity":"rs-271775","journalConfig":"researchsquare"},"__N_SSP":true},"page":"/article/[identity]/[[...version]]","query":{"redirect":"/article/rs-271775","identity":"rs-271775","version":["v1"]},"buildId":"_2-kVJe1T_tPrBINL-cwx","isFallback":false,"isExperimentalCompile":false,"dynamicIds":[84888],"gssp":true,"scriptLoader":[]}
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