Room-temperature spin injection from a ferromagnetic semiconductor

Room-temperature spin injection from a ferromagnetic semiconductor | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Article Room-temperature spin injection from a ferromagnetic semiconductor Shobhit Goel, Nguyen Huynh Duy Khang, Le Duc Anh, Pham Nam Hai, and 1 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-2417178/v1 This work is licensed under a CC BY 4.0 License Status: Published Journal Publication published 07 Feb, 2023 Read the published version in Scientific Reports → Version 1 posted 8 You are reading this latest preprint version Abstract Spin injection using ferromagnetic semiconductors at room temperature is a building block for the realization of spin-functional semiconductor devices. Nevertheless, this has been very challenging due to the lack of reliable room-temperature ferromagnetism in well-known group IV and III-V based semiconductors. Here, we demonstrate room-temperature spin injection by using spin pumping in a (Ga,Fe)Sb / BiSb heterostructure, where (Ga,Fe)Sb is a ferromagnetic semiconductor (FMS) with high Curie temperature (TC) and BiSb is a topological insulator (TI). Despite the very small magnetization of (Ga,Fe)Sb at room temperature (45 emu/cc), we detected spin injection from (Ga,Fe)Sb by utilizing the large inverse spin Hall effect (ISHE) in BiSb. Our study provides the first demonstration of spin injection at room temperature from a FMS. Physical sciences/Physics/Condensed matter physics/Spintronics Physical sciences/Materials science/Condensed matter physics/Spintronics Full Text Additional Declarations No competing interests reported. Supplementary Files SupplementaryInformation.pdf Cite Share Download PDF Status: Published Journal Publication published 07 Feb, 2023 Read the published version in Scientific Reports → Version 1 posted Editorial decision: Major revision 11 Jan, 2023 Reviews received at journal 06 Jan, 2023 Reviewers agreed at journal 31 Dec, 2022 Reviewers invited by journal 31 Dec, 2022 Editor assigned by journal 30 Dec, 2022 Editor invited by journal 29 Dec, 2022 Submission checks completed at journal 29 Dec, 2022 First submitted to journal 26 Dec, 2022 You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. 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Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-2417178","acceptedTermsAndConditions":true,"allowDirectSubmit":false,"archivedVersions":[],"articleType":"Article","associatedPublications":[],"authors":[{"id":163592494,"identity":"0b80592e-af29-44bb-941f-d75e96965e9e","order_by":0,"name":"Shobhit Goel","email":"","orcid":"","institution":"The University of Tokyo","correspondingAuthor":false,"prefix":"","firstName":"Shobhit","middleName":"","lastName":"Goel","suffix":""},{"id":163592495,"identity":"6be665b9-ccdb-4ebc-841e-308d61cb09fa","order_by":1,"name":"Nguyen Huynh Duy Khang","email":"","orcid":"","institution":"Tokyo Institute of 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