Improvement of the electrical performance of Ag/MEH-PPV/SiNWs Schottky diode by the insertion of a thin layer of MEH-PPV polymer and study of the annealing effect

Improvement of the electrical performance of Ag/MEH-PPV/SiNWs Schottky diode by the insertion of a thin layer of MEH-PPV polymer and study of the annealing effect | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Improvement of the electrical performance of Ag/MEH-PPV/SiNWs Schottky diode by the insertion of a thin layer of MEH-PPV polymer and study of the annealing effect L. Jerbi, M. Rahmani, H. Ajlani, M. Guendouz, N. Lorrain, M. Oueslati, and 1 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-2358965/v1 This work is licensed under a CC BY 4.0 License Status: Published Journal Publication published 06 Feb, 2023 Read the published version in Journal of Inorganic and Organometallic Polymers and Materials → Version 1 posted 7 You are reading this latest preprint version Abstract Poly[2-methoxy-5-(2’-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV) thin layer was deposited on silicon nanowires (SiNWs) by electroless dipping method. SiNWs were obtained using Ag-assisted chemical etching process. Scanning Electron Microscopy (SEM) images reveal a vertical alignment of the SiNWs as well as the formation of MEH-PPV layer on their surfaces. The presence of MEH-PPV polymer on the SiNWs surface was confirmed by Energy-dispersive X-ray (EDX). Current-Voltage (I-V) measurements were performed for the electrical characterization of Ag/MEH-PPV/SiNWs diodes before and after annealing. The ideality factor (n), the barrier height (φ b ) and the series resistance (R S ) are determined using the Cheung method. The diode parameters are strongly affected by the immersion duration in MEH-PPV solution as well as the annealing temperature. The rectification rate of the diodes was increased by MEH-PPV deposition. The annealing temperature has a great influence on the diode parameters by the thermal activation of carriers at Ag/MEH-PPV and MEH-PPV/SiNWs interfaces. I-V characteristics show an ohmic character for temperatures above 250° C. The electrical parameters such as equivalent carrier concentration (N D ) and built-in voltage (V b ) and other values of φ b are calculated from Capacitance-Voltage (C-V) measurements. Silicon nanowires MEH-PPV Annealing Schottky diode Electrical properties Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Full Text Additional Declarations No competing interests reported. Supplementary Files Tables.docx Cite Share Download PDF Status: Published Journal Publication published 06 Feb, 2023 Read the published version in Journal of Inorganic and Organometallic Polymers and Materials → Version 1 posted Editorial decision: Major revision 17 Jan, 2023 Reviews received at journal 26 Dec, 2022 Reviewers agreed at journal 14 Dec, 2022 Reviewers invited by journal 14 Dec, 2022 Editor assigned by journal 13 Dec, 2022 Submission checks completed at journal 13 Dec, 2022 First submitted to journal 08 Dec, 2022 You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-2358965","acceptedTermsAndConditions":true,"allowDirectSubmit":false,"archivedVersions":[],"articleType":"Research Article","associatedPublications":[],"authors":[{"id":159740666,"identity":"037ca702-4c0a-4e23-ab38-17b934476af0","order_by":0,"name":"L. 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diode for different immersion durations in MEH-PPV solution presented in semi-Log scale.\u003c/p\u003e","description":"","filename":"3.png","url":"https://assets-eu.researchsquare.com/files/rs-2358965/v1/2f5bbf1187acf651fa3eeac8.png"},{"id":30384546,"identity":"0c77353f-dade-4a7f-8d0d-376cf0353787","added_by":"auto","created_at":"2022-12-15 16:20:26","extension":"png","order_by":4,"title":"Figure 4","display":"","copyAsset":false,"role":"figure","size":22649,"visible":true,"origin":"","legend":"\u003cp\u003eThe experimental plot of dV/dln(I) and H(I) versus I obtained from forward bias I–V characteristics of Ag/MEH-PPV/SiNWs structure for different immersion durations.\u003c/p\u003e","description":"","filename":"4.png","url":"https://assets-eu.researchsquare.com/files/rs-2358965/v1/5f89ea34426b098bc6525cd0.png"},{"id":30383104,"identity":"9f19b052-237c-4696-b5af-6408766ea445","added_by":"auto","created_at":"2022-12-15 16:12:26","extension":"png","order_by":5,"title":"Figure 5","display":"","copyAsset":false,"role":"figure","size":8779,"visible":true,"origin":"","legend":"\u003cp\u003eThe I-V characteristics of Ag/SiNWs and Ag/MEH-PPV/SiNWs (90 min) structures in Log-Log scale.\u003c/p\u003e","description":"","filename":"5.png","url":"https://assets-eu.researchsquare.com/files/rs-2358965/v1/934fc5f079ea14b35c9d5c8d.png"},{"id":30385995,"identity":"6c37eae2-ed52-490c-8c91-704c66247438","added_by":"auto","created_at":"2022-12-15 16:36:26","extension":"png","order_by":6,"title":"Figure 6","display":"","copyAsset":false,"role":"figure","size":22059,"visible":true,"origin":"","legend":"\u003cp\u003eThe reverse bias capacitance–voltage (C-V) (a) and C\u003csup\u003e-2\u003c/sup\u003e–V (b) graphs of Ag/SiNWs and Ag/MEH-PPV/SiNWs Schottky diodes\u003c/p\u003e","description":"","filename":"6.png","url":"https://assets-eu.researchsquare.com/files/rs-2358965/v1/1556db8c174ffa02d34fa675.png"},{"id":30384549,"identity":"90666e72-d847-4076-8d04-010c1bd1138c","added_by":"auto","created_at":"2022-12-15 16:20:26","extension":"png","order_by":7,"title":"Figure 7","display":"","copyAsset":false,"role":"figure","size":47748,"visible":true,"origin":"","legend":"\u003cp\u003edV/dln(I) versus I\u003cem\u003e \u003c/em\u003eplots obtained from forward bias I–V characteristics at different annealing temperatures (A.T.) of the Ag/MEH-PPV/SiNWs structure for various immersion durations in P3HT solution.\u003c/p\u003e","description":"","filename":"7.png","url":"https://assets-eu.researchsquare.com/files/rs-2358965/v1/21bed88743e6d894600f90bb.png"},{"id":30385583,"identity":"3d7b2385-5771-4372-ae49-421609a072df","added_by":"auto","created_at":"2022-12-15 16:28:26","extension":"png","order_by":8,"title":"Figure 8","display":"","copyAsset":false,"role":"figure","size":45857,"visible":true,"origin":"","legend":"\u003cp\u003eH(I) versus I\u003cem\u003e \u003c/em\u003eplots obtained from forward bias I–V characteristics at different annealing temperatures (A.T.) of the Ag/MEH-PPV/SiNWs structure for various immersion durations in P3HT solution.\u003c/p\u003e","description":"","filename":"8.png","url":"https://assets-eu.researchsquare.com/files/rs-2358965/v1/f0a2a14ff129b0f91ac6dc24.png"},{"id":44719207,"identity":"a5c1d524-3de6-442e-87fd-4cf4eeee8a52","added_by":"auto","created_at":"2023-10-16 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Materials","twitterHandle":"","acdcEnabled":true,"dfaEnabled":true,"editorialSystem":"em","reportingPortfolio":"Springer Hybrid","inReviewEnabled":true,"inReviewRevisionsEnabled":false},"keywords":"Silicon nanowires, MEH-PPV, Annealing, Schottky diode, Electrical properties","lastPublishedDoi":"10.21203/rs.3.rs-2358965/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-2358965/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"\u003cp\u003ePoly[2-methoxy-5-(2’-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV) thin layer was deposited on silicon nanowires (SiNWs) by electroless dipping method. SiNWs were obtained using Ag-assisted chemical etching process. Scanning Electron Microscopy (SEM) images reveal a vertical alignment of the SiNWs as well as the formation of MEH-PPV layer on their\u0026nbsp;surfaces. The presence of MEH-PPV polymer on the SiNWs surface was confirmed by Energy-dispersive X-ray (EDX). Current-Voltage (I-V) measurements were performed for the electrical characterization of\u0026nbsp;Ag/MEH-PPV/SiNWs diodes before and after annealing. The ideality factor (n), the barrier height (φ\u003csub\u003eb\u003c/sub\u003e) and the series resistance (R\u003csub\u003eS\u003c/sub\u003e) are determined using the Cheung method. The diode parameters are strongly affected by the immersion duration in MEH-PPV solution as well as the annealing temperature. The rectification rate of the diodes was increased by MEH-PPV deposition. The annealing temperature has a great influence on the diode parameters by the thermal activation of carriers at Ag/MEH-PPV and MEH-PPV/SiNWs interfaces. I-V characteristics show an ohmic character for temperatures above 250° C. 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