Electrothermal Properties of 2D Materials in Device Applications | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Electrothermal Properties of 2D Materials in Device Applications Samantha Klein, Zlatan Aksamija This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-3150643/v1 This work is licensed under a CC BY 4.0 License Status: Published Journal Publication published 26 Sep, 2023 Read the published version in Journal of Computational Electronics → Version 1 posted 7 You are reading this latest preprint version Abstract To continue downscaling transistors, new materials must be explored. Two-dimensional (2D) materials are appealing due to their thinness and bandgap. The relatively weak van der Waals forces between layers in 2D materials allow easy exfoliation and device fabrication but also result in poor heat transfer to the substrate, which is the main path for heat removal. The impaired thermal coupling is exacerbated in few-layer devices where Joule heat dissipated in the layers further from the substrate encounters additional interlayer thermal resistance before reaching the substrate, which results in self-heating and thermal degradation of mobility. This study explores the electro-thermal properties of five popular 2D materials (MoS 2 , MoSe 2 , WS 2 , WSe 2 , and 2D black phosphorous). We simulate various devices with self-heating with a range of gate and drain biases and examine the effects on mobility and change in device temperature. The effects are compared to the isothermal case to ascertain the impact of self-heating. We observe that Joule heating has a significant effect on temperature rise, layer-wise drain current, and effective mobility. We show that black phosphorous performs the best thermally, owing to its relatively high thermal conductance to the substrate, while WSe 2 performs the best electrically. This study will inform future thermally aware designs of nanoelectronic devices based on 2D materials. Transition metal dichalcogenides Heat dissipation Thermal boundary conductance Joule heating Mobility degradation Full Text Additional Declarations No competing interests reported. Cite Share Download PDF Status: Published Journal Publication published 26 Sep, 2023 Read the published version in Journal of Computational Electronics → Version 1 posted Editorial decision: Major revision 06 Aug, 2023 Reviews received at journal 17 Jul, 2023 Reviewers agreed at journal 17 Jul, 2023 Reviewers invited by journal 16 Jul, 2023 Editor assigned by journal 08 Jul, 2023 Submission checks completed at journal 08 Jul, 2023 First submitted to journal 07 Jul, 2023 You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. 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Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-3150643","acceptedTermsAndConditions":true,"allowDirectSubmit":false,"archivedVersions":[],"articleType":"Research Article","associatedPublications":[],"authors":[{"id":216825890,"identity":"b7848a08-19b6-473a-8acf-f10b939293a1","order_by":0,"name":"Samantha Klein","email":"","orcid":"","institution":"University of Massachusetts Amherst","correspondingAuthor":false,"submittingAuthor":false,"prefix":"","firstName":"Samantha","middleName":"","lastName":"Klein","suffix":""},{"id":216825891,"identity":"174d3fdc-1db2-46e6-99c1-9a759bef7ffc","order_by":1,"name":"Zlatan Aksamija","email":"data:image/png;base64,iVBORw0KGgoAAAANSUhEUgAAAZAAAAAyAQMAAABI0h/eAAAABlBMVEX///8AAABVwtN+AAAACXBIWXMAAA7EAAAOxAGVKw4bAAABA0lEQVRIiWNgGAWjYDACdigtASISeBjkgBQbfi3MDIwNyFqMgRpI0QIEiQ2EtMg3Mz9/8HMHg7xk/+GnGx7I2KVvuN/87AFDjU00Li2MzWyGjb1nGAxnS6SZ3UjgSc7dcIzN3IDhWFpuAy53MTMYNvC2MTDOk2AAaWEGamEwk2BsOIxTCxsz+8fGv20M9vP4j38DaqlPNzjG/g2vFh5mHsNmoC2JsxlyQLYcTjA4xoPfFglmnsLZsm0SyTNn5JQBtRw3nHksp0wiAY9f5NvbN3x822ZjO+P88W03f/ZUy/MdPr5N4kONDU4tMMsgFGMPlJ+AXzky+EG80lEwCkbBKBg5AAAuk1VJAthq0QAAAABJRU5ErkJggg==","orcid":"","institution":"University of Utah","correspondingAuthor":true,"submittingAuthor":false,"prefix":"","firstName":"Zlatan","middleName":"","lastName":"Aksamija","suffix":""}],"badges":[],"createdAt":"2023-07-08 02:29:04","currentVersionCode":1,"declarations":"","doi":"10.21203/rs.3.rs-3150643/v1","doiUrl":"https://doi.org/10.21203/rs.3.rs-3150643/v1","draftVersion":[],"editorialEvents":[{"content":"https://doi.org/10.1007/s10825-023-02091-z","type":"published","date":"2023-09-26T15:00:42+00:00"}],"editorialNote":"","failedWorkflow":false,"files":[{"id":43974379,"identity":"53c847fe-0aff-4aa9-9016-183198cba15b","added_by":"auto","created_at":"2023-10-02 15:06:20","extension":"pdf","order_by":1,"title":"","display":"","copyAsset":false,"role":"manuscript-pdf","size":2808641,"visible":true,"origin":"","legend":"","description":"","filename":"JCEarticleV1review.pdf","url":"https://assets-eu.researchsquare.com/files/rs-3150643/v1_covered_1115f952-7356-4149-a2bb-20b15181e4e7.pdf"}],"financialInterests":"No competing interests reported.","formattedTitle":"Electrothermal Properties of 2D Materials in Device Applications","fulltext":[],"fulltextSource":"","fullText":"","funders":[],"hasAdminPriorityOnWorkflow":false,"hasManuscriptDocX":false,"hasOptedInToPreprint":true,"hasPassedJournalQc":"","hasAnyPriority":false,"hideJournal":false,"highlight":"","institution":"","isAcceptedByJournal":true,"isAuthorSuppliedPdf":true,"isDeskRejected":"","isHiddenFromSearch":false,"isInQc":false,"isInWorkflow":false,"isPdf":true,"isPdfUpToDate":true,"isWithdrawnOrRetracted":false,"journal":{"display":true,"email":"
[email protected]","identity":"journal-of-computational-electronics","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":false,"externalIdentity":"jcel","sideBox":"Learn more about [Journal of Computational Electronics](https://www.springer.com/journal/10825)","snPcode":"10825","submissionUrl":"https://submission.nature.com/new-submission/10825/3","title":"Journal of Computational Electronics","twitterHandle":"","acdcEnabled":true,"dfaEnabled":true,"editorialSystem":"stoa","reportingPortfolio":"Springer Hybrid","inReviewEnabled":true,"inReviewRevisionsEnabled":false},"keywords":"Transition metal dichalcogenides, Heat dissipation, Thermal boundary conductance, Joule heating, Mobility degradation","lastPublishedDoi":"10.21203/rs.3.rs-3150643/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-3150643/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"\u003cp\u003eTo continue downscaling transistors, new materials must be explored. Two-dimensional (2D) materials are appealing due to their thinness and bandgap. The relatively weak van der Waals forces between layers in 2D materials allow easy exfoliation and device fabrication but also result in poor heat transfer to the substrate, which is the main path for heat removal. The impaired thermal coupling is exacerbated in few-layer devices where Joule heat dissipated in the layers further from the substrate encounters additional interlayer thermal resistance before reaching the substrate, which results in self-heating and thermal degradation of mobility. This study explores the electro-thermal properties of five popular 2D materials (MoS\u003csub\u003e2\u003c/sub\u003e, MoSe\u003csub\u003e2\u003c/sub\u003e, WS\u003csub\u003e2\u003c/sub\u003e, WSe\u003csub\u003e2\u003c/sub\u003e, and 2D black phosphorous). We simulate various devices with self-heating with a range of gate and drain biases and examine the effects on mobility and change in device temperature. The effects are compared to the isothermal case to ascertain the impact of self-heating. We observe that Joule heating has a significant effect on temperature rise, layer-wise drain current, and effective mobility. We show that black phosphorous performs the best thermally, owing to its relatively high thermal conductance to the substrate, while WSe\u003csub\u003e2\u003c/sub\u003e performs the best electrically. This study will inform future thermally aware designs of nanoelectronic devices based on 2D materials.\u003c/p\u003e","manuscriptTitle":"Electrothermal Properties of 2D Materials in Device Applications","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2023-07-12 03:48:46","doi":"10.21203/rs.3.rs-3150643/v1","editorialEvents":[{"type":"communityComments","content":0},{"type":"decision","content":"Major revision","date":"2023-08-06T22:03:52+00:00","index":"","fulltext":""},{"type":"editorInvitedReview","content":"","date":"2023-07-17T06:18:38+00:00","index":"hide","fulltext":""},{"type":"reviewerAgreed","content":"05bbde3b-9e26-42b1-8b06-6bedd622d78a","date":"2023-07-17T04:29:26+00:00","index":"hide","fulltext":""},{"type":"reviewersInvited","content":"","date":"2023-07-17T03:57:21+00:00","index":"","fulltext":""},{"type":"editorAssigned","content":"","date":"2023-07-08T10:49:00+00:00","index":"","fulltext":""},{"type":"checksComplete","content":"","date":"2023-07-08T10:48:59+00:00","index":"","fulltext":""},{"type":"submitted","content":"Journal of Computational Electronics","date":"2023-07-08T02:16:19+00:00","index":"","fulltext":""}],"status":"published","journal":{"display":true,"email":"
[email protected]","identity":"journal-of-computational-electronics","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":false,"externalIdentity":"jcel","sideBox":"Learn more about [Journal of Computational Electronics](https://www.springer.com/journal/10825)","snPcode":"10825","submissionUrl":"https://submission.nature.com/new-submission/10825/3","title":"Journal of Computational Electronics","twitterHandle":"","acdcEnabled":true,"dfaEnabled":true,"editorialSystem":"stoa","reportingPortfolio":"Springer Hybrid","inReviewEnabled":true,"inReviewRevisionsEnabled":false}}],"origin":"","ownerIdentity":"fc2b7705-f6e9-4ea1-b818-a9b2d997fea4","owner":[],"postedDate":"July 12th, 2023","published":true,"recentEditorialEvents":[],"rejectedJournal":[],"revision":"","amendment":"","status":"published-in-journal","subjectAreas":[],"tags":[],"updatedAt":"2023-10-02T15:02:55+00:00","versionOfRecord":{"articleIdentity":"rs-3150643","link":"https://doi.org/10.1007/s10825-023-02091-z","journal":{"identity":"journal-of-computational-electronics","isVorOnly":false,"title":"Journal of Computational Electronics"},"publishedOn":"2023-09-26 15:00:42","publishedOnDateReadable":"September 26th, 2023"},"versionCreatedAt":"2023-07-12 03:48:46","video":"","vorDoi":"10.1007/s10825-023-02091-z","vorDoiUrl":"https://doi.org/10.1007/s10825-023-02091-z","workflowStages":[]},"version":"v1","identity":"rs-3150643","journalConfig":"researchsquare"},"__N_SSP":true},"page":"/article/[identity]/[[...version]]","query":{"redirect":"/article/rs-3150643","identity":"rs-3150643","version":["v1"]},"buildId":"WrCJVZZCHTDjtuVLN7oU0","isFallback":false,"isExperimentalCompile":false,"dynamicIds":[84888],"gssp":true,"scriptLoader":[]}
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