Program Gate-Less Reconfigurable FETs Based on Ferroelectric

In this work, we propose ferroelectric-based reconfigurable field-effect transistors (FeRFETs) which can switch the polarity without program gate (PG). In FeRFETs, the non-volatile and reconfigurable electrostatic doping by ferroelectric enables the type conversion without PG. Through the TCAD simulations calibrated with the experimental data, we confirm a reconfigurable high doping level (> 1×10 21 cm -3 ), a clear type conversion and highly tunable performance in FeRFETs. It is also found that carefully tailoring coercive field ( E C ) is important to maximize the performance of FeRFETs.