Research Modelling and the Photoelectric Performance of Flexible Freestanding GaAs-Based Solar Cells

The principal aim of this work is to fabricate flexible freestanding gallium arsenide GaAs-based solar cells and analyze their photoelectric properties by mathematical simulations in MATLAB Code and COMSOL Multiphysics. Remote epitaxy technique was employed in addition to the metal-organic chemical vapor deposition (MOCVD) method to manufacture flexible freestanding GaAs solar cells. The experimental power output of the invented single-junction GaAs membranes after optimization of the layer thickness and doping was approximately 19.62 mW at air mass condition AM1.5G (1000 W/m 2 integrated irradiance and 25°C ambient temperature). The photoelectrical properties of the solar cells, such as the absorption and generation rates, built-in potential, electric field, reflection, and recombination mechanism were analyzed using MATLAB Code and COMSOL Multiphysics/Semiconductor modules. The results showed a good fit for the simulation analysis. Furthermore, the optimized PV cell photogenerated current and operating solar cell temperature were analyzed under AM1.5G, AM1.5D and AM 0 conditions at a local point (Malaysia, Kuala Lumpur) to show the effect of insolation variation on the solar cell efficiency. It was found that the membranes can produce a photocurrent reaching 21 mA at AM1.5G condition and 28.86 mA that gives 27.4 mW output power at the extra-terrestrial irradiance, AM 0 condition (1377 W/m 2 ).