Importing experimental results via S2D model in ADS tool for Power Amplifier Design

In this paper, behavioral modelling of a power amplifier is implemented by using S2P and S2D model setup. By using the standard power amplifier for obtaining the measured results of Scattering (S-parameters and large signal parameters. These parameters are imported into the S2P and S2D model to perform the small signal and large signal analysis at 3 GHz frequency. Then, the simulated results are compared with the measured results to verify the efficient utilization of behavioral models. The novelty of this work deals with the simulation study of the characteristics of a silicon-based driver amplifier which are obtained directly from the measurements. This work can be utilized to determine the influence of the driver amplifier properties on the power amplifier measurements via simulation. At last, the study of relative error performance analysis between measured and simulated results of different parameters is carried out and calculated of NMSE (in %) for S11, S12, S21, S22, gain, pout, 1 dB compression point, ACP, 3rd harmonics, 4th harmonics, and 5th harmonics are 0.0083, 0.0055, 0.0086, 0.011, 0.0844, 0.814, 0.926, 0.71, 0.22, 0.012 and 0.070 respectively.