RF and Crosstalk Analysis of Copper and MLGNR Interconnects Using Different Repeaters in Sub-10 nm Regime

RF and Crosstalk Analysis of Copper and MLGNR Interconnects Using Different Repeaters in Sub-10 nm Regime | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article RF and Crosstalk Analysis of Copper and MLGNR Interconnects Using Different Repeaters in Sub-10 nm Regime Manjit Kaur, Sanjeev Kumar, Balwinder Raj, Neena Gupta, Arun Kumar Singh This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-236432/v1 This work is licensed under a CC BY 4.0 License Status: Posted Version 1 posted You are reading this latest preprint version Abstract This paper presents RF and crosstalk analysis of Copper (Cu) and multi-layer Graphene nanoribbon (MLGNR) based interconnects using Fin field-effect transistor (FinFET) and virtual-source carbon nanotube field effect transistor (CNFET) based repeater insertions in sub-10 nm regime. The SPICE based analysis utilizes an accurate π-type equivalent single conductor (ESC) model for mutually coupled interconnects at 7 nm technology node. The transfer function and 3-dB bandwidth results of lithium-doped MLGNRs offer many fold improved RF performance than Cu. The out-of-phase crosstalk induced (OPXT) delay results with FinFET repeaters demonstrate 27.54 and 67.6 % reductions for pristine and lithium-doped MLGNRs as compared to Cu, whereas CNFET repeaters demonstrate 20.48 and 81.88 % reductions at interconnect length of 1000 µm. The peak far-end crosstalk (FEXT) noise voltage results demonstrate 86.03 and 62.5 % using FinFET repeaters and 88.14 and 69.9 % reductions using CNFET repeaters for pristine and Li-doped MLGNRs than Cu at 1000 µm length. Further, the energy-delay-product (EDP) results demonstrate 59.7 and 97 % reductions using FinFET repeaters for pristine and Li-doped MLGNRs than Cu at length of 1000 µm. The EDP results using CNFET repeaters exhibit 34 % degradations for pristine-MLGNRs than Cu while Li-MLGNR exhibit 98.61% reductions than Cu at length of 1000 µm. Scientific Communication Electrical Engineering Technical Communication Equivalent Single Conductor (ESC). Energy-delay-product (EDP). Far-End Crosstalk (FEXT). In-Phase Crosstalk (IPXT). Multilayer graphene nanoribbon (MLGNR). Near-End Crosstalk (NEXT). Out-of-Phase Crosstalk (OPXT) Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Full Text Cite Share Download PDF Status: Posted Version 1 posted You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-236432","acceptedTermsAndConditions":true,"allowDirectSubmit":true,"archivedVersions":[],"articleType":"Research Article","associatedPublications":[],"authors":[{"id":14158696,"identity":"7dbf41d5-fe8c-4979-9acf-419f283416a2","order_by":0,"name":"Manjit Kaur","email":"","orcid":"","institution":"Punjab Engineering College: PEC University of Technology","correspondingAuthor":false,"submittingAuthor":false,"prefix":"","firstName":"Manjit","middleName":"","lastName":"Kaur","suffix":""},{"id":14158697,"identity":"7b4b1e94-6dee-46d7-ac7e-ffcf75620289","order_by":1,"name":"Sanjeev Kumar","email":"","orcid":"","institution":"Punjab Engineering College: PEC University of Technology","correspondingAuthor":false,"submittingAuthor":false,"prefix":"","firstName":"Sanjeev","middleName":"","lastName":"Kumar","suffix":""},{"id":14158698,"identity":"64dec62d-961d-441f-a274-6fffd09908a4","order_by":2,"name":"Balwinder Raj","email":"","orcid":"","institution":"National Institute of Technical Teachers' Training and Research Chandigarh","correspondingAuthor":false,"submittingAuthor":false,"prefix":"","firstName":"Balwinder","middleName":"","lastName":"Raj","suffix":""},{"id":14158699,"identity":"0ca97ecd-3ed0-4aaf-8e13-3d774c3f03ed","order_by":3,"name":"Neena Gupta","email":"","orcid":"","institution":"Punjab Engineering College: PEC University of Technology","correspondingAuthor":false,"submittingAuthor":false,"prefix":"","firstName":"Neena","middleName":"","lastName":"Gupta","suffix":""},{"id":14158700,"identity":"c5a927a5-125f-48c0-8042-9cc40183a5cb","order_by":4,"name":"Arun Kumar Singh","email":"data:image/png;base64,iVBORw0KGgoAAAANSUhEUgAAAZAAAAAyAQMAAABI0h/eAAAABlBMVEX///8AAABVwtN+AAAACXBIWXMAAA7EAAAOxAGVKw4bAAABCUlEQVRIiWNgGAWjYJACxgYo4wAQyYEEgIwE4rUYMzAwMxCvBaQrsYGQFv7ZZ8wezmzbJm/ewP7wcMGvO+n9EvkHDnyoSGPgb+/Gqk/iXI654ca224ZzDvAYHJ7Z9yx35oxkhoMzzuQwSJw5uwGrNWd4zCQftt1mnMHAw3CYt+dw7oYbyUBGWwWDgUQuVi3yUC32MxjYH4C0pBsQ0mIA0gJ0WOIMIPswz4/DCVAtOTi1GJ5hK5Occe528gxmoF94Gw4bzux5bAD0SxoPLr/InWHeJtlTdtt2Bnv74888fw7L87MnPnzwoSJZjr+9F7v34YAZiBnbEHwe/Mrh4A+R6kbBKBgFo2BEAQCUFmud5YWzKQAAAABJRU5ErkJggg==","orcid":"https://orcid.org/0000-0003-0853-398X","institution":"Punjab Engineering College: PEC University of Technology","correspondingAuthor":true,"submittingAuthor":false,"prefix":"","firstName":"Arun","middleName":"Kumar","lastName":"Singh","suffix":""}],"badges":[],"createdAt":"2021-02-12 10:19:39","currentVersionCode":1,"declarations":"","doi":"10.21203/rs.3.rs-236432/v1","doiUrl":"https://doi.org/10.21203/rs.3.rs-236432/v1","draftVersion":[],"editorialEvents":[],"editorialNote":"","failedWorkflow":false,"files":[{"id":6519585,"identity":"8292de0e-66b2-4483-909f-5f654585f303","added_by":"auto","created_at":"2021-03-02 15:01:20","extension":"jpg","order_by":1,"title":"Figure 1","display":"","copyAsset":false,"role":"figure","size":31700,"visible":true,"origin":"","legend":"Equivalent π-type ESC model used in driver-interconnect load (DIL) configuration [15]","description":"","filename":"fig1.jpg","url":"https://assets-eu.researchsquare.com/files/rs-236432/v1/68baa2d9c256166167c49316.jpg"},{"id":6519889,"identity":"a61aa0b7-eecf-4ac0-9acf-1af91b8c39e1","added_by":"auto","created_at":"2021-03-02 15:04:20","extension":"jpg","order_by":2,"title":"Figure 2","display":"","copyAsset":false,"role":"figure","size":49855,"visible":true,"origin":"","legend":"Repeater insertion to improve delay performance of interconnects","description":"","filename":"fig2.jpg","url":"https://assets-eu.researchsquare.com/files/rs-236432/v1/f2922a69b55b52ff54cecf75.jpg"},{"id":6519579,"identity":"f4bdd2ef-325b-4fc9-9373-4ff325af2fed","added_by":"auto","created_at":"2021-03-02 15:01:20","extension":"jpg","order_by":3,"title":"Figure 3","display":"","copyAsset":false,"role":"figure","size":45074,"visible":true,"origin":"","legend":"Skin-depth degradations for Cu and GNR materials","description":"","filename":"fig3.jpg","url":"https://assets-eu.researchsquare.com/files/rs-236432/v1/b3bd70970438d43522ce6b2b.jpg"},{"id":6519580,"identity":"4811d3d1-b7c3-4a7f-8c90-25ee1f3ecd8b","added_by":"auto","created_at":"2021-03-02 15:01:20","extension":"jpg","order_by":4,"title":"Figure 4","display":"","copyAsset":false,"role":"figure","size":150100,"visible":true,"origin":"","legend":"Transfer gain graphs of Cu, pristine and Lithium-doped MLGNRs interconnects extracted using SPICE for lengths of 500, 700, and 1000 μm with FinFET and CNFET repeaters. All transfer gain values are calculated at W=10.5 nm, H=25.2 nm. In a. Cu transfer gain graphs, in b. pristine-MLGNR graphs for Fermi energy of 0.2 eV, MFP=419 nm, and number of layers=75 in c. Stage-2 Lithium-doped MLGNR for Fermi energy of 1.5 eV, MFP=300 nm, and number of layers=68, and in d. comparative transfer gain graphs of different materials at length 1000 μm.","description":"","filename":"fig4.jpg","url":"https://assets-eu.researchsquare.com/files/rs-236432/v1/43edcf5d034f0e14845f9a7a.jpg"},{"id":6519582,"identity":"852de94a-794d-4266-b937-d7e9b8e54dce","added_by":"auto","created_at":"2021-03-02 15:01:20","extension":"jpg","order_by":5,"title":"Figure 5","display":"","copyAsset":false,"role":"figure","size":59183,"visible":true,"origin":"","legend":"f3dB bandwidth graphs of different interconnect materials with FinFET and CNFET repeaters","description":"","filename":"fig5.jpg","url":"https://assets-eu.researchsquare.com/files/rs-236432/v1/29c6ec648fc45702490d7c51.jpg"},{"id":6519289,"identity":"e2fbef0c-e762-43b1-8f7d-ac14e341463a","added_by":"auto","created_at":"2021-03-02 14:58:21","extension":"jpg","order_by":6,"title":"Figure 6","display":"","copyAsset":false,"role":"figure","size":30276,"visible":true,"origin":"","legend":"Interconnect geometry for crosstalk analysis [1, 24]","description":"","filename":"fig6.jpg","url":"https://assets-eu.researchsquare.com/files/rs-236432/v1/35962a082c04c83d92b73430.jpg"},{"id":6519584,"identity":"5ddf6436-7a6d-4139-8105-6776ceb42ea3","added_by":"auto","created_at":"2021-03-02 15:01:20","extension":"jpg","order_by":7,"title":"Figure 7","display":"","copyAsset":false,"role":"figure","size":61302,"visible":true,"origin":"","legend":"Three-line bus structure used for capacitive crosstalk induced delay calculations","description":"","filename":"fig7.jpg","url":"https://assets-eu.researchsquare.com/files/rs-236432/v1/53f29f191497ac6545f46e6c.jpg"},{"id":6519590,"identity":"7ae5cff8-a3af-439a-8ff4-7ffa9bfa5962","added_by":"auto","created_at":"2021-03-02 15:01:20","extension":"jpg","order_by":8,"title":"Figure 8","display":"","copyAsset":false,"role":"figure","size":153250,"visible":true,"origin":"","legend":"Comparative out-of-phase victim-line output waveforms for worst-case crosstalk induced delay of Cu, pristine-MLGNR, and Li-MLGNR, nanointerconnect materials using a. FinFET and b. CNFET repeaters","description":"","filename":"fig8.jpg","url":"https://assets-eu.researchsquare.com/files/rs-236432/v1/1dc793510684ae28cd4dc1c2.jpg"},{"id":6519893,"identity":"7f46ce18-2e87-45d9-994c-06f7f6bda719","added_by":"auto","created_at":"2021-03-02 15:04:21","extension":"jpg","order_by":9,"title":"Figure 9","display":"","copyAsset":false,"role":"figure","size":84150,"visible":true,"origin":"","legend":"a. OPXT induced delay results calculated using three-line bus model for Cu, pristine, and Li-MLGNR nanointerconnect materials with FINFET and CNFET repeaters. Crosstalk induced delay computations, and b. IPXT induced delay results","description":"","filename":"fig9.jpg","url":"https://assets-eu.researchsquare.com/files/rs-236432/v1/cfc8dce7a9ced8bc223a6928.jpg"},{"id":6519281,"identity":"1e8e33c8-73a7-4dbe-bf3c-ec4ee5671510","added_by":"auto","created_at":"2021-03-02 14:58:20","extension":"jpg","order_by":10,"title":"Figure 10","display":"","copyAsset":false,"role":"figure","size":79261,"visible":true,"origin":"","legend":"a. Peak NEXT noise voltage calculated using three-line bus model for Cu, pristine, and Li-MLGNR nanointerconnect materials with FinFET and CNFET repeaters, and b. Peak FEXT noise voltage.","description":"","filename":"fig10.jpg","url":"https://assets-eu.researchsquare.com/files/rs-236432/v1/f6a214a3322340f8499a71ed.jpg"},{"id":6519288,"identity":"159d7684-1e0c-43e3-a16d-66202530edfb","added_by":"auto","created_at":"2021-03-02 14:58:20","extension":"jpg","order_by":11,"title":"Figure 11","display":"","copyAsset":false,"role":"figure","size":80121,"visible":true,"origin":"","legend":"Comparative a. propagation delay and b. Average power results of Cu, pristine-MLGNR, and Li-doped MLGNR nanointerconnect materials using FinFET and CNFET repeaters.","description":"","filename":"fig11.jpg","url":"https://assets-eu.researchsquare.com/files/rs-236432/v1/a6ce016c51be09559a66a073.jpg"},{"id":6519890,"identity":"b836aec4-53d3-4db6-a16c-b5de8f7c6d0b","added_by":"auto","created_at":"2021-03-02 15:04:21","extension":"jpg","order_by":12,"title":"Figure 12","display":"","copyAsset":false,"role":"figure","size":51889,"visible":true,"origin":"","legend":"Comparative energy-delay-product (EDP) results of Cu, pristine-MLGNR, Li-doped MLGNR nanointerconnect materials using FinFET and CNFET repeaters.","description":"","filename":"fig12.jpg","url":"https://assets-eu.researchsquare.com/files/rs-236432/v1/a83b3af1397e0f7937915feb.jpg"},{"id":13598731,"identity":"549eabe5-55bd-4011-bcf9-25d80c15349d","added_by":"auto","created_at":"2021-09-17 05:36:51","extension":"pdf","order_by":1,"title":"","display":"","copyAsset":false,"role":"manuscript-pdf","size":2157253,"visible":true,"origin":"","legend":"","description":"","filename":"RFandCrosstalkAnalysisofCuandMLGNR20210202.pdf","url":"https://assets-eu.researchsquare.com/files/rs-236432/v1_covered.pdf"},{"id":6520174,"identity":"373930a2-d24c-4243-82b9-0a5554178dde","added_by":"auto","created_at":"2021-03-02 15:07:24","extension":"pdf","order_by":1,"title":"","display":"","copyAsset":false,"role":"manuscript-pdf","size":1807972,"visible":true,"origin":"","legend":"","description":"","filename":"RFandCrosstalkAnalysisofCuandMLGNR20210202.pdf","url":"https://assets-eu.researchsquare.com/files/rs-236432/v1_stamped.pdf"}],"financialInterests":"","formattedTitle":"RF and Crosstalk Analysis of Copper and MLGNR Interconnects Using Different Repeaters in Sub-10 nm Regime","fulltext":[{"header":"Full Text","content":"\u003cp\u003eThis preprint is available for \u003ca href='/article/rs-236432/latest.pdf' target='_blank'\u003edownload as a PDF\u003c/a\u003e.\u003c/p\u003e"}],"fulltextSource":"","fullText":"","funders":[],"hasAdminPriorityOnWorkflow":false,"hasManuscriptDocX":false,"hasOptedInToPreprint":true,"hasPassedJournalQc":"","hasAnyPriority":false,"hideJournal":true,"highlight":"","institution":"","isAcceptedByJournal":false,"isAuthorSuppliedPdf":true,"isDeskRejected":"","isHiddenFromSearch":false,"isInQc":false,"isInWorkflow":false,"isPdf":false,"isPdfUpToDate":true,"isWithdrawnOrRetracted":false,"journal":{"display":true,"email":"[email protected]","identity":"researchsquare","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":true,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"/submission","title":"Research Square","twitterHandle":"researchsquare","acdcEnabled":true,"dfaEnabled":false,"editorialSystem":"","reportingPortfolio":"","inReviewEnabled":false,"inReviewRevisionsEnabled":true},"keywords":"Equivalent Single Conductor (ESC). Energy-delay-product (EDP). Far-End Crosstalk (FEXT). In-Phase Crosstalk (IPXT). Multilayer graphene nanoribbon (MLGNR). Near-End Crosstalk (NEXT). Out-of-Phase Crosstalk (OPXT)","lastPublishedDoi":"10.21203/rs.3.rs-236432/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-236432/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"This paper presents RF and crosstalk analysis of Copper (Cu) and multi-layer Graphene nanoribbon (MLGNR) based interconnects using Fin field-effect transistor (FinFET) and virtual-source carbon nanotube field effect transistor (CNFET) based repeater insertions in sub-10 nm regime. The SPICE based analysis utilizes an accurate π-type equivalent single conductor (ESC) model for mutually coupled interconnects at 7 nm technology node. The transfer function and 3-dB bandwidth results of lithium-doped MLGNRs offer many fold improved RF performance than Cu. The out-of-phase crosstalk induced (OPXT) delay results with FinFET repeaters demonstrate 27.54 and 67.6 % reductions for pristine and lithium-doped MLGNRs as compared to Cu, whereas CNFET repeaters demonstrate 20.48 and 81.88 % reductions at interconnect length of 1000 µm. The peak far-end crosstalk (FEXT) noise voltage results demonstrate 86.03 and 62.5 % using FinFET repeaters and 88.14 and 69.9 % reductions using CNFET repeaters for pristine and Li-doped MLGNRs than Cu at 1000 µm length. Further, the energy-delay-product (EDP) results demonstrate 59.7 and 97 % reductions using FinFET repeaters for pristine and Li-doped MLGNRs than Cu at length of 1000 µm. The EDP results using CNFET repeaters exhibit 34 % degradations for pristine-MLGNRs than Cu while Li-MLGNR exhibit 98.61% reductions than Cu at length of 1000 µm.","manuscriptTitle":"RF and Crosstalk Analysis of Copper and MLGNR Interconnects Using Different Repeaters in Sub-10 nm Regime","msid":"","msnumber":"","nonDraftVersions":[{"code":1,"date":"2021-03-02 14:58:18","doi":"10.21203/rs.3.rs-236432/v1","editorialEvents":[{"type":"communityComments","content":0}],"status":"published","journal":{"display":true,"email":"[email protected]","identity":"researchsquare","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":true,"externalIdentity":"","sideBox":"","snPcode":"","submissionUrl":"/submission","title":"Research Square","twitterHandle":"researchsquare","acdcEnabled":true,"dfaEnabled":false,"editorialSystem":"","reportingPortfolio":"","inReviewEnabled":false,"inReviewRevisionsEnabled":true}}],"origin":"","ownerIdentity":"084f0c50-4f7c-49e5-93f9-f7baedbda501","owner":[],"postedDate":"March 2nd, 2021","published":true,"recentEditorialEvents":[],"rejectedJournal":[],"revision":"","amendment":"","status":"posted","subjectAreas":[{"id":2706105,"name":"Scientific Communication"},{"id":2706106,"name":"Electrical Engineering"},{"id":2706107,"name":"Technical Communication"}],"tags":[],"updatedAt":"2021-11-17T22:52:01+00:00","versionOfRecord":[],"versionCreatedAt":"2021-03-02 14:58:18","video":"","vorDoi":"","vorDoiUrl":"","workflowStages":[]},"version":"v1","identity":"rs-236432","journalConfig":"researchsquare"},"__N_SSP":true},"page":"/article/[identity]/[[...version]]","query":{"redirect":"/article/rs-236432","identity":"rs-236432","version":["v1"]},"buildId":"cBFmMYwuxLRRLfASyISRj","isFallback":false,"isExperimentalCompile":false,"dynamicIds":[84888],"gssp":true,"scriptLoader":[]}