Fabrication and Electrical Characterization of a Transistor Device Configuration Based on Graphene Oxide Films

Abstract The films of graphene oxide multilayer synthesized from bamboo as material source (GO), by the method of double thermal decomposition (DTD-method), for carbonization temperatures of 973 and 1023 K, exhibited electrical behavior as semiconductor with narrow band-gap energy and conduction mechanism by the Mott 3D variable range hopping, postulating this material as an excellent candidate for the development of electronic devices. This work presents the fabrication procedure and electrical characterization of a transistor configuration based on GO films (GOT). The electrical characterization was carried out in an automated system at low power and it were measured the transistor curves families of input, output, reaction and transfer in GOT devices. The results obtained suggest that GOT devices could be used in switching and voltage attenuation applications in low electrical power circuits, given the electrical behavior obtained as voltage dependent voltage sources with unitary gain approximately.