An improved assessment of high efficiency heterojunction perovskite solar cell employing InxGa1-xAs as efficient hole transport layer

Abstract Spiro-OMeTAD is an excellent nominee for HTM application, but its high hygrpscopicity, inclination to crystallize, and fragility to moisture and heat make it unsuitable for solar cells. So, it is of interest to investigate other HTM candidate. In this paper, the use of p-type InGaAs as hole transport materials (HTM) has been suggested to enhance the performance of perovskite-based solar cell (PSC). The simulation of hybrid CH3NH3PbI3/ InGaAs planar heterojunction perovskite solar cell is performed using Atlas Silvaco simulator. In order to confirm the predictability of the proposed simulation methodology, the conventional ITO/TiO2/MAPbI3/Spiro-OMeTAD structure is simulated and good coincidence with experimental results shown. The proposed design using InGaAs as HTM outperforms the conventional device in terms of short-circuit current density (JSC) of 37.2 mA/cm2, open-circuit voltage (VOC) of 1V, fill factor (FF) of 80% and high value of efficiency. Besides, The finding show that with In content of x=0.7 the efficiency will improved to reach a value of about 30%.