A Universal Urbach Rule for Disordered Organic Semiconductors

Abstract In crystalline semiconductors, the sharpness of the absorption spectrum onset is characterized by temperature-dependent Urbach energies. These energies quantify the static, structural disorder causing localized exponential tail states, and the dynamic disorder due to electron-phonon scattering. The applicability of this exponential-tail model to molecular and amorphous solids has long been debated. Nonetheless, exponential fittings are routinely applied to the analysis of the sub-gap absorption of organic semiconductors alongside Gaussian-like spectral line-shapes predicted by non-adiabatic Marcus theory. Herein, we elucidate the sub-gap spectral line-shapes of organic semiconductors and their blends by temperature-dependent quantum efficiency measurements in photovoltaic structures. We find that the Urbach energy associated with singlet excitons universally equals the thermal energy regardless of static disorder. These observations are consistent with absorption spectra obtained from a convolution of Gaussian density of excitonic states weighted by a Boltzmann factor. A generalized Marcus charge transfer model is presented that explains the absorption spectral line-shape of disordered molecular matrices, and we also provide a simple strategy to determine the excitonic disorder energy. Our findings elaborate the true meaning of the dynamic Urbach energy in molecular solids and deliver a way of relating the photo-physics to static disorder, crucial for optimizing molecular electronic devices such as organic solar cells.