Significant enhancement of carrier localization in InGaN MQWs by underlying high-In-content superlattice

Significant enhancement of carrier localization in InGaN MQWs by underlying high-In-content superlattice | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Article Significant enhancement of carrier localization in InGaN MQWs by underlying high-In-content superlattice Juras Mickevičius, A. Širvinskytė, K. Nomeika, T. Malinauskas, and 2 more This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-5936662/v2 This work is licensed under a CC BY 4.0 License Status: Posted Version 2 posted You are reading this latest preprint version Show more versions Abstract To improve the emission efficiency of InGaN/GaN multiple quantum wells (MQWs), we used a high-indium-content short-period superlattice (SPSL) underlayer and validated the approach through structural and optical characterization. The SPSL underlayers were deposited at temperatures equal to or lower than those used for the growth of active region MQWs. The impact of such underlayers was studied using XRD, photoluminescence (PL), and light-induced transient grating (LITG) techniques. The large redshift of the PL band and higher PL efficiency at low excitations were achieved in the MQWs grown on SPSLs, although this enhancement came at the cost of reduced carrier lifetime compared to the structures without the SPSL underlayer. We attribute the observed changes to the interplay between the transformation of localizing potential and the generation of additional defects. The coincidence of these modifications results in the formation of regions with a high density of both localized states and nonradiative recombination centers. Physical sciences/Physics/Electronics photonics and device physics/Photonic devices Physical sciences/Physics/Condensed matter physics/Surfaces interfaces and thin films Physical sciences/Materials science/Materials for optics/Lasers leds and light sources/Inorganic leds InGaN MOCVD SPSL Photoluminescence Carrier localization Carrier dynamics Full Text Additional Declarations The authors declare no competing interests. Cite Share Download PDF Status: Posted Version 2 posted You are reading this latest preprint version Show more versions Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. We do this by developing innovative software and high quality services for the global research community. Our growing team is made up of researchers and industry professionals working together to solve the most critical problems facing scientific publishing. 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