Design and Performance Analysis of 70nm GaN HEMT with AlGaN Back Barrier for V-Band Nanoelectronics Applications

Design and Performance Analysis of 70nm GaN HEMT with AlGaN Back Barrier for V-Band Nanoelectronics Applications | Research Square window.SnipcartSettings = { analytics: { enabled: false } }; (function() { var accessVector = localStorage.getItem('access_vector') || ''; window.dataLayer = window.dataLayer || []; if (accessVector) { window.dataLayer.push({ user: { profile: { profileInfo: { snid: accessVector } } } }); } })(); (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start':new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0],j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src='https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f);})(window,document,'script','dataLayer','GTM-K279D39R'); Browse Preprints In Review Journals COVID-19 Preprints AJE Video Bytes Research Tools Research Promotion AJE Professional Editing AJE Rubriq About Preprint Platform In Review Editorial Policies Our Team Advisory Board Help Center Sign In Submit a Preprint Cite Share Download PDF Research Article Design and Performance Analysis of 70nm GaN HEMT with AlGaN Back Barrier for V-Band Nanoelectronics Applications Geeta Pattnaik, Meryleen Mohapatra, Bibhuprasad Mohanty This is a preprint; it has not been peer reviewed by a journal. https://doi.org/ 10.21203/rs.3.rs-6959149/v1 This work is licensed under a CC BY 4.0 License Status: Published Journal Publication published 12 Aug, 2025 Read the published version in Microsystem Technologies → Version 1 posted 11 You are reading this latest preprint version Abstract The work is focused on studying the effect of AlGaN back-barrier layer on the performance of a GaN HEMT device. The impact of adding a back barrier layer to the structure is being investigated taking different DC and RF parameters into account. The work has reported a 70nm AlGaN/GaN HEMT device using a 20nm thin AlGaN back barrier layer. The study reports that introducing a back barrier helps in enhancing the overall performance of the device in several ways. The conduction band was raised beyond the GaN channel region with the addition of the AlGaN back barrier thus creating a narrower quantum well and restricting their flow to the quantum well thereby preventing the 2DEG channel charge carriers from flowing into the buffer region. Benefits of back barrier layer inclusion in the HEMT device are excellently exhibited in terms of enhanced output drain current of 1.6A/mm; flat transconductance peak of nearly 280mS/mm; cut-off frequency and maximum frequency of 47GHz and 55GHz respectively. The device can thus be incorporated in high frequency applications upto V-band range. In addition, several other parameters are also reported that help to study the device’s linearity. A comparative analysis has been performed taking into account our proposed GaN HEMT devices with and without the inclusion of AlGaN back barrier layer considering a gate length of 200nm. The paper further illustrates the impact of AlGaN back barrier on the various device parameters by varying the gate length from 1000nm to 70nm keeping all other device dimensions constant. Full Text Additional Declarations No competing interests reported. Cite Share Download PDF Status: Published Journal Publication published 12 Aug, 2025 Read the published version in Microsystem Technologies → Version 1 posted Editorial decision: Revision requested 06 Jul, 2025 Reviews received at journal 05 Jul, 2025 Reviews received at journal 27 Jun, 2025 Reviewers agreed at journal 26 Jun, 2025 Reviewers agreed at journal 24 Jun, 2025 Reviewers agreed at journal 24 Jun, 2025 Reviewers agreed at journal 24 Jun, 2025 Reviewers invited by journal 24 Jun, 2025 Editor assigned by journal 24 Jun, 2025 Submission checks completed at journal 24 Jun, 2025 First submitted to journal 23 Jun, 2025 You are reading this latest preprint version Research Square lets you share your work early, gain feedback from the community, and start making changes to your manuscript prior to peer review in a journal. As a division of Research Square Company, we’re committed to making research communication faster, fairer, and more useful. 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Also discoverable on Platform About Our Team In Review Editorial Policies Advisory Board Help Center Resources Author Services Accessibility API Access RSS feed Manage Cookie Preferences © Research Square 2026 | ISSN 2693-5015 (online) Privacy Policy Terms of Service Do Not Sell My Personal Information {"props":{"pageProps":{"initialData":{"identity":"rs-6959149","acceptedTermsAndConditions":true,"allowDirectSubmit":false,"archivedVersions":[],"articleType":"Research Article","associatedPublications":[],"authors":[{"id":476036663,"identity":"b81a653b-6e53-478f-a6eb-c4475f834c52","order_by":0,"name":"Geeta Pattnaik","email":"","orcid":"","institution":"ITER, Siksha ‘O’ Anusandhan Deemed to be University","correspondingAuthor":false,"prefix":"","firstName":"Geeta","middleName":"","lastName":"Pattnaik","suffix":""},{"id":476036664,"identity":"e51a5eea-7911-4a6d-9d08-fb80cc7c7f40","order_by":1,"name":"Meryleen Mohapatra","email":"data:image/png;base64,iVBORw0KGgoAAAANSUhEUgAAAZAAAAAyAQMAAABI0h/eAAAABlBMVEX///8AAABVwtN+AAAACXBIWXMAAA7EAAAOxAGVKw4bAAAA0UlEQVRIiWNgGAWjYLCCB0DMD2IkFBCrJQGIJRtADANStBgcALGI0aLb3vtMIqHCJs/4/OrEDw8MGOT5xQ7g12J25riZRMKZtGKzG283SwAdZjhzdgIBLTfS2CQS2w4nbrtxdgNIS4LBbUJa7j8Davn3P3HzjLObfxCn5QYbUEvDgcQN/L3biLTlTBqzRcKx5MQZN3i3WSQYSBDhl+PHGG98qLFL7O8/u/nmjwobeX5pAlqAgEUCTEmAVUoQVA4CzB/AFP8BolSPglEwCkbBCAQAnEBH0wmTDm0AAAAASUVORK5CYII=","orcid":"","institution":"ITER, Siksha ‘O’ Anusandhan Deemed to be University","correspondingAuthor":true,"prefix":"","firstName":"Meryleen","middleName":"","lastName":"Mohapatra","suffix":""},{"id":476036665,"identity":"db1eec97-9161-4486-b345-f8be2b8d51f1","order_by":2,"name":"Bibhuprasad Mohanty","email":"","orcid":"","institution":"ITER, Siksha ‘O’ Anusandhan Deemed to be University","correspondingAuthor":false,"prefix":"","firstName":"Bibhuprasad","middleName":"","lastName":"Mohanty","suffix":""}],"badges":[],"createdAt":"2025-06-23 18:08:12","currentVersionCode":1,"declarations":"","doi":"10.21203/rs.3.rs-6959149/v1","doiUrl":"https://doi.org/10.21203/rs.3.rs-6959149/v1","draftVersion":[],"editorialEvents":[{"content":"https://doi.org/10.1007/s00542-025-05931-z","type":"published","date":"2025-08-12T15:57:18+00:00"}],"editorialNote":"","failedWorkflow":false,"files":[{"id":89310541,"identity":"9321e470-506b-4367-8374-f6c1d643b81b","added_by":"auto","created_at":"2025-08-18 16:07:32","extension":"pdf","order_by":1,"title":"","display":"","copyAsset":false,"role":"manuscript-pdf","size":1967925,"visible":true,"origin":"","legend":"","description":"","filename":"microsystemtechnologiesFinalpaper23062025.pdf","url":"https://assets-eu.researchsquare.com/files/rs-6959149/v1_covered_24826280-6010-4842-81f0-7e60052fe792.pdf"}],"financialInterests":"No competing interests reported.","formattedTitle":"Design and Performance Analysis of 70nm GaN HEMT with AlGaN Back Barrier for V-Band Nanoelectronics Applications","fulltext":[],"fulltextSource":"","fullText":"","funders":[],"hasAdminPriorityOnWorkflow":false,"hasManuscriptDocX":false,"hasOptedInToPreprint":true,"hasPassedJournalQc":"","hasAnyPriority":false,"hideJournal":false,"highlight":"","institution":"","isAcceptedByJournal":true,"isAuthorSuppliedPdf":true,"isDeskRejected":"","isHiddenFromSearch":false,"isInQc":false,"isInWorkflow":false,"isPdf":true,"isPdfUpToDate":true,"isWithdrawnOrRetracted":false,"journal":{"display":true,"email":"[email protected]","identity":"microsystem-technologies","isNatureJournal":false,"hasQc":true,"allowDirectSubmit":false,"externalIdentity":"mite","sideBox":"Learn more about [Microsystem Technologies](http://link.springer.com/journal/542)","snPcode":"542","submissionUrl":"https://submission.nature.com/new-submission/542/3","title":"Microsystem Technologies","twitterHandle":"","acdcEnabled":true,"dfaEnabled":true,"editorialSystem":"stoa","reportingPortfolio":"Springer Hybrid","inReviewEnabled":true,"inReviewRevisionsEnabled":false},"keywords":"","lastPublishedDoi":"10.21203/rs.3.rs-6959149/v1","lastPublishedDoiUrl":"https://doi.org/10.21203/rs.3.rs-6959149/v1","license":{"name":"CC BY 4.0","url":"https://creativecommons.org/licenses/by/4.0/"},"manuscriptAbstract":"\u003cp\u003eThe work is focused on studying the effect of AlGaN back-barrier layer on the performance of a GaN HEMT device. 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